Abstract: A pipe clamping apparatus of a pipe processing machine includes first and second slide rails on inner and outer end surfaces of the clamping apparatus, a turntable with slot openings, first and second rotating rings with a gear rack, plural linkage modules and plural clamping components. A rod of the pneumatic cylinder is fixed to the inner end surface; the pneumatic cylinder has a rack engaged with the gear rack and is fixed to a block having an oblique slot and a rail slot; and the clamping component has a claw, a slider passing through the slot opening and oblique slot, and a rail slot. Air drives the pneumatic cylinder to move, while the rack is driving the first or second rotating rings to move the opposite pneumatic cylinder in an opposite direction, and the slider slides in the oblique slot to drive the claw to clamp the pipe.

Abstract: A pipe end clamping apparatus includes a first pneumatic cylinder, a second pneumatic cylinder and a clamping component. The first pneumatic cylinder includes a first piston in the first cylinder body, first and second air chambers corresponding to the first and second air inlets respectively, and a first plunger rod installed to the first piston. The second pneumatic cylinder includes a second piston in the second cylinder body, third and fourth air chambers corresponding to the third and fourth air inlets respectively, and, a second plunger rod installed to the second piston. The clamping component has a clamping seat and a clamping component in the housing and pumps air into different air inlets of the first or second pneumatic cylinder to control the first or second piston to displace in the first and second cylinder bodies, so as to control clamping the clamping component or loosening the pipe.

Abstract: A gate driver with reduced voltage fluctuations driving a display device generates pulse signals shifted in a specified phase. The gate driver includes connected unit circuits. Each unit circuit includes an output terminal, input and output transistors, and a holding module. First and second control signals, alternating oppositely between high and low states, govern the two transistors. The input transistor is controlled by a first control signal and outputs a high level voltage to a first node based on a trigger signal. The output transistor outputs the shifted pulse signal synchronously with a clock control signal, based on the high level voltage of the first node. Initially, the trigger signal is low and the first and second control signals are high. The holding module outputs the low level voltage to the output terminal based on the first control signal and the second control signal.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure in a substrate. The method includes forming a first dielectric layer over the first source/drain structure, the second source/drain structure, and the substrate. The method includes forming a gate electrode in the first trench. The method includes removing the first dielectric layer. The method includes forming a first conductive strip structure over the first source/drain structure and the substrate. The method includes partially removing the first conductive strip structure to form a second trench in the first conductive strip structure. The method includes forming a second dielectric layer in the second trench.

Abstract: A method and structure directed to providing a source/drain isolation structure includes providing a device having a first source/drain region adjacent to a second source/drain region. A masking layer is deposited between the first and second source/drain regions and over an exposed first part of the second source/drain region. After depositing the masking layer, a first portion of an ILD layer disposed on either side of the masking layer is etched, without substantial etching of the masking layer, to expose a second part of the second source/drain region and to expose the first source/drain region. After etching the first portion of the ILD layer, the masking layer is etched to form an L-shaped masking layer. After forming the L-shaped masking layer, a first metal layer is formed over the exposed first source/drain region and a second metal layer is formed over the exposed second part of the second source/drain region.

Abstract: A method includes forming a first dummy source/drain (S/D) contact over a first epitaxial S/D feature and a second dummy S/D contact over a second epitaxial S/D feature, where first and the second dummy S/D contacts may be formed in an interlayer dielectric (ILD) layer; removing a portion of the first dummy S/D contact, a portion of the second dummy S/D contact, and a portion of the ILD layer disposed between the first and the second dummy S/D contacts to form a first trench; removing a remaining portion of the first dummy S/D contact to form a second trench; and forming a metal S/D contact in the first and the second trenches. The first and the second dummy S/D contacts include a dielectric material different from a dielectric material of the ILD layer.

Abstract: A method and structure directed to providing a source/drain isolation structure includes providing a device having a first source/drain region adjacent to a second source/drain region. A masking layer is deposited between the first and second source/drain regions and over an exposed first part of the second source/drain region. After depositing the masking layer, a first portion of an ILD layer disposed on either side of the masking layer is etched, without substantial etching of the masking layer, to expose a second part of the second source/drain region and to expose the first source/drain region. After etching the first portion of the ILD layer, the masking layer is etched to form an L-shaped masking layer. After forming the L-shaped masking layer, a first metal layer is formed over the exposed first source/drain region and a second metal layer is formed over the exposed second part of the second source/drain region.

Abstract: A lamp has a base, a transmission mechanism, and at least one light-emitting assembly. The transmission mechanism is mounted on the base and is rotatable around a transmission axis. The at least one light-emitting assembly is mounted on the base and is connected to the transmission mechanism. Each light-emitting assembly is rotatable around a rotation axis which is nonparallel with the transmission axis. The at least one light-emitting assembly can be rotated through driving the transmission mechanism, so as to adjust lighting effects of the at least one light-emitting assembly and an appearance of the lamp. Not only the lighting effects can be adjusted according to a user's need, but also the appearance of the lamp can be changed to adapt the lamp to the environment where the lamp is disposed, such that the lamp of the present invention can be widely used.

Abstract: A voltage regulation circuit is suitable to provide an output voltage to a core circuit. The voltage regulation circuit includes a pad, a pull-low unit, a first controlling unit, a second controlling unit and a voltage regulation circuit. The pad receives and provides an input voltage. The pull-low unit generates a pull-low voltage according to the input voltage. The first controlling unit generates a first controlling signal according to the input voltage and the pull-low voltage. The second controlling unit generates a second controlling signal according to the input voltage and the first controlling signal. The voltage regulation unit regulates the input voltage according to the first controlling signal and the second controlling signal, so as to generate the output voltage.

Abstract: An image processing method includes the following steps: generating a current depth map and a current confidence map, wherein the current confidence map comprises the confidence value of each pixel; receiving a previous camera pose corresponding to a previous position, wherein the previous position corresponds to a first depth map and a first confidence map; mapping at least one pixel position of the first depth map to at least one pixel position of the current depth map according to the previous camera pose and the current camera pose of the current position; selecting the one with the highest confidence value after the confidence value of at least one pixel of the first confidence map is compared with the corresponding confidence value of the pixel of the current confidence map; and generating an optimized depth map of the current position according to the pixels corresponding to the highest confidence value.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a fin disposed over a substrate, a gate structure disposed over a channel region of the fin, such that the gate structure traverses source/drain regions of the fin, a device-level interlayer dielectric (ILD) layer of a multi-layer interconnect structure disposed over the substrate, wherein the device-level ILD layer includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, and a third dielectric layer disposed over the second dielectric layer, wherein a material of the third dielectric layer is different than a material of the second dielectric layer and a material of the first dielectric layer. The semiconductor device further comprises a gate contact to the gate structure disposed in the device-level ILD layer and a source/drain contact to the source/drain regions disposed in the device-level ILD layer.

Abstract: A lighting device is provided, including a housing, a light source module, a light guiding module, and a protective member. The housing has an accommodating space, and the light source module is disposed in the accommodating space. The light guiding module has a top surface, a bottom surface opposite to the top surface, a first lateral surface, and a second lateral surface opposite to the first lateral surface. The light from the light source module can be received by the top surface. The first and second lateral surfaces connect the top surface to the bottom surface. The protective member surrounds the first lateral surface, the bottom surface, and the second lateral surface. The opposite ends of the protective member are connected to the housing.

Abstract: A method of forming an integrated circuit structure includes forming a first source/drain contact plug over and electrically coupling to a source/drain region of a transistor, forming a first dielectric hard mask overlapping a gate stack, recessing the first source/drain contact plug to form a first recess, forming a second dielectric hard mask in the first recess, recessing an inter-layer dielectric layer to form a second recess, and forming a third dielectric hard mask in the second recess. The third dielectric hard mask contacts both the first dielectric hard mask and the second dielectric hard mask.

Abstract: A display panel includes a gate integrated circuit, a number of scan lines extending from the gate integrated circuit for transmitting scan signals, a source integrated circuit, a number of data lines extending from the source integrated circuit for transmitting data signals, a number of pixel electrodes for receiving the scan signals and the data signals, and a number of transistors each electrically coupled to a corresponding scan line, a corresponding data line, and a corresponding pixel electrode. The transistors each include a gate electrode, a source electrode, and a drain electrode. The drain electrode includes an overlapping portion overlapping with the gate electrode. The gate integrated circuit transmits the scan signals along the scan lines. A size of the overlapping portion increases along a transmitting direction of the scan signal along the scan line.

Abstract: A method includes forming a first dummy source/drain (S/D) contact over a first epitaxial S/D feature and a second dummy S/D contact over a second epitaxial S/D feature, where first and the second dummy S/D contacts may be formed in an interlayer dielectric (ILD) layer; removing a portion of the first dummy S/D contact, a portion of the second dummy S/D contact, and a portion of the ILD layer disposed between the first and the second dummy S/D contacts to form a first trench; removing a remaining portion of the first dummy S/D contact to form a second trench; and forming a metal S/D contact in the first and the second trenches. The first and the second dummy S/D contacts include a dielectric material different from a dielectric material of the ILD layer.

Abstract: A method of forming a semiconductor device includes providing a device having a gate stack including a metal gate layer. The device further includes a spacer layer disposed on a sidewall of the gate stack and a source/drain feature adjacent to the gate stack. The method further includes performing a first etch-back process to the metal gate layer to form an etched-back metal gate layer. In some embodiments, the method includes depositing a metal layer over the etched-back metal gate layer. In some cases, a semiconductor layer is formed over both the metal layer and the spacer layer to provide a T-shaped helmet layer over the gate stack and the spacer layer.

Abstract: A gate driver with reduced voltage fluctuations driving a display device generates pulse signals shifted in a specified phase. The gate driver includes connected unit circuits. Each unit circuit includes an output terminal, input and output transistors, and a holding module. First and second control signals, alternating oppositely between high and low states, govern the two transistors. The input transistor is controlled by a first control signal and outputs a high level voltage to a first node based on a trigger signal. The output transistor outputs the shifted pulse signal synchronously with a clock control signal, based on the high level voltage of the first node. Initially, the trigger signal is low and the first and second control signals are high. The holding module outputs the low level voltage to the output terminal based on the first control signal and the second control signal.

Abstract: A display device comprising thin film transistor array substrate includes scan lines, data lines, pixel units, and a source driver. Each pair of scan lines extends in a first direction and data lines extend in a second intersecting direction. Of the first and second sub-pixels in each pixel unit, the first sub-pixel connects to the first scan line, and the second sub-pixel connects to the second scan line. The first and second sub-pixels also straddle and connect to one data line. Source driver supplies the data lines with voltages and the voltage to the first sub-pixel is greater than the voltage to the second sub-pixel. This configuration avoids appearance of stripes on the display arising from charging rates of adjacent pixel columns not being the same. A display panel using the thin film transistor array substrate is also provided.

Abstract: A gate driving circuit which allows narrower framing of a display screen includes cascade-connected gate driving modules. Each gate driving module is electrically coupled to first and second scan lines and outputs scanning signals to the first and the second scan lines in a time-division manner in response to first and second clock signals. Each gate driving module includes an input transistor, and first and second output transistors. The input transistor receives a trigger signal for activating the gate driving module. The input transistor controls the first output transistor to output first scanning signal to first scan line in response to the first clock signal and controls the second output transistor to output second scanning signal to the second scan line in response to the second clock signal.

Abstract: A thin film transistor array substrate with always-equal parasitic capacitances for a display includes scan lines, data lines, common lines, and pixel units. First and second scan lines extend in a first direction. Data and common lines extend in a second intersecting direction and are arranged to alternate in the first direction. First and second sub-pixels of pixel units are distributed on either side of and connected to one of a scan line pair. The first and second sub-pixels also straddle and connect to one data line. Bridges on a common line cover a portion of one scan line pair in the second direction and each bridge overlaps first and second scan lines. First scan line overlap with bridge is equal to second scan line overlap. A display panel using the thin film transistor array substrate is also provided.