Abstract: A clutch includes an outer box and an intermediate member pivotably connected to the outer box. The intermediate member is coupled with an outer handle to pivot therewith. A torsion spring is disposed between the intermediate member and the outer box and biases the intermediate member to an initial position. A coupling member is pivotably mounted between the intermediate member and the outer box and is operatively connected to a first latch of a latch device of a lock device. When the coupling member and the intermediate member are jointly pivotable, pivotal movement of the outer handle causes the first latch to move from the latching position or the unlatching position. When the coupling member is not jointly pivotable with the intermediate member, pivotal movement of the outer handle is incapable of causing movement of the first latch. A lock device with the clutch is also disclosed.

Abstract: The present disclosure provides improved processes for the preparation of Relugolix and intermediates thereof. Relugolix is prepared via intermediates (M7) and (M8): wherein X is as described herein. Present disclosure also provides three additional routes to prepare Relugolix and intermediates thereof, where the starting material of ethyl 2-amino-4-methyl-5-(4-nitrophenyl)thiophene-3-carboxylate (SM1) is protected by coupling with an acyl chloride, a hydroxylamine or an oxime.

Abstract: This application provides a method for detecting images of testing object using hyperspectral imaging. Firstly, obtaining a hyperspectral imaging information according to a reference image, hereby, obtaining corresponded hyperspectral image from an input image and obtaining corresponded feature values for operating Principal components analysis to simplify feature values. Then, obtaining feature images by Convolution kernel, and then positioning an image of an object under detected by a default box and a boundary box from the feature image. By Comparing with the esophageal cancer sample image, the image of the object under detected is classifying to an esophageal cancer image or a non-esophageal cancer image. Thus, detecting an input image from the image capturing device by the convolutional neural network to judge if the input image is the esophageal cancer image for helping the doctor to interpret the image of the object under detected.

Abstract: A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

Abstract: Structural design of cranial nerve degeneration contrast agent precursor, the cranial nerve degeneration contrast agent prepared using the cranial nerve degeneration contrast agent precursor can be used for positron radiation tomography to detect alpha-synuclein.

Abstract: A semiconductor isolation structure includes a silicon-on-insulator wafer, a first deep trench isolation structure and a second deep trench isolation structure. The silicon-on-insulator wafer includes a semiconductor substrate, a buried insulation layer disposed on the semiconductor substrate, and a semiconductor layer disposed on the buried insulation layer. The semiconductor layer has a functional region. The first deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional region. The second deep trench isolation structure penetrates semiconductor layer and the buried insulation layer, and surrounds the first deep trench isolation structure.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. The semiconductor substrate includes a channel region, and at least a part of the isolation structure is disposed in the semiconductor substrate and surrounds the channel region. The gate oxide layer is disposed on the semiconductor substrate, and the gate oxide layer includes a first portion and a second portion. The second portion is disposed at two opposite sides of the first portion in a horizontal direction, and a thickness of the first portion is greater than a thickness of the second portion. The gate structure is disposed on the gate oxide layer and the isolation structure.

Abstract: A semiconductor package includes a chip package disposed on a substrate, a plurality of electronic components disposed aside the chip package on the substrate and a stiffener structure disposed on the substrate. The stiffener structure includes a stiffener ring surrounding the chip package and the plurality of electronic components, a stiffener rib between the chip package and the plurality of electronic components, wherein the stiffener rib includes a first portion and a second portion on the first portion, and a width of the second portion is greater than a width of the first portion. The semiconductor package further includes a lid attached to the stiffener structure, the chip package and the plurality of electronic components. A method of forming the semiconductor package is also provided.

Abstract: A high voltage semiconductor device includes a semiconductor substrate, an isolation structure, a gate oxide layer, and a gate structure. The semiconductor substrate includes a channel region, and at least a part of the isolation structure is disposed in the semiconductor substrate and surrounds the channel region. The gate oxide layer is disposed on the semiconductor substrate, and the gate oxide layer includes a first portion and a second portion. The second portion is disposed at two opposite sides of the first portion in a horizontal direction, and a thickness of the first portion is greater than a thickness of the second portion. The gate structure is disposed on the gate oxide layer and the isolation structure.

Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.

Abstract: A semiconductor structure includes a circuit substrate, a semiconductor die, and a cover. The semiconductor die is disposed on the circuit substrate. The cover is disposed over the semiconductor die and over the circuit substrate. The cover comprises a lid portion and a support portion. The structure includes a first adhesive bonding the support portion to the circuit substrate and a second adhesive bonding the support portion and the lid portion.

Abstract: A three-dimensional printing device including a rigid optically transparent plate, a release film, an adhesive layer, a light source, and a reflection assembly is provided. The rigid optically transparent plate has a first surface and a second surface opposite the first surface, the release film is disposed on a side of the rigid optically transparent plate adjacent to the first surface, and the adhesive layer is arranged between the rigid optically transparent plate and the release film. The light source is disposed on a side of the rigid optically transparent plate adjacent to the second surface, and the reflection assembly includes at least one mirror and is arranged at a position capable of forming a light path from the light source to the rigid optically transparent plate.

Abstract: A chip crack detection structure, including a substrate, a first chip crack detection ring, a second chip crack detection ring, and a seal ring, is provided. The first chip crack detection ring includes multiple first conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the first conductive layers is not in contact with any plug. The second chip crack detection ring surrounds the first chip crack detection ring. The second chip crack detection ring includes multiple second conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the second conductive layers is not in contact with any plug. The seal ring surrounds the second chip crack detection ring. The seal ring includes multiple third conductive layers stacked over the substrate and electrically connected to each other.

Abstract: An electronic device including a panel is provided. The panel includes a first substrate, a second substrate opposite to the first substrate, a medium layer disposed between the first substrate and the second substrate, a sealant disposed between the first substrate and the second substrate and surrounding the medium layer, a plurality of first electrodes disposed between the first substrate and the medium layer, and a plurality of connecting lines disposed between the second substrate and the first electrodes. The sealant includes a plurality of conductive particles. The first electrodes are electrically connected to the connection lines through the conductive particles. There is a first space S1 between two adjacent connecting lines of the connecting lines. One of the conductive particles has a width of W. The first space S1 and the width W conform to the following formula: 3<S1/W<20.

Abstract: A power converter device is provided. A feedback circuit outputs a comparison output signal. A phase-locked loop circuit provides a phase-locked signal according to a reference clock signal and an inductor voltage in a power converter circuit. An on-time circuit provides an on-time comparing signal according to the phase-locked signal, an input voltage, the inductor voltage and an output voltage of the power converter circuit. A first input terminal of an SR flip-flop receives the on-time comparing signal from the on-time circuit. A second input terminal of the SR flip-flop receives the comparison output signal from the feedback circuit. A frequency control circuit, according to changes in the input voltage and the output voltage of the power converter circuit, instantaneously adjusts the on-time of the on-time comparing signal such that an output terminal of the SR flip-flop outputs the adjusted on-time signal to the power converter circuit.

Abstract: A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.

Abstract: A system and method for recommending emojis to send by a messaging application includes receiving user biosignals from at least one sensor, receiving context information from at least one context source, and selecting, using a rule-based heuristic state selector, a list of plausible user states from possible heuristic states in a heuristic state table based on the received user biosignals and received context information. A state predictor determines, from at least the list of plausible user states and a user model of emojis previously sent in different user states, a list of user states and probabilities that the user will send an emoji for each user state given the context information. The recommended emojis are displayed for selection for sending by the messaging application in order from the highest to the lowest probabilities that the user will send the recommended emojis based on a selected plausible user state.

Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.

Abstract: A high-bandwidth package-on-package (HBPoP) structure includes a first package structure and a second package structure disposed over the first package structure. The first package structure includes a first package substrate, a semiconductor die, an interposer, and a molding material. The first package substrate is formed of a silicon and/or ceramic material. The semiconductor die is disposed over the first package substrate. The interposer is disposed over the semiconductor die and is formed of a silicon and/or ceramic material. The molding material is disposed between the first package substrate and the interposer and surrounds the semiconductor die.

Abstract: A chip crack detection structure, including a substrate, a first chip crack detection ring, a second chip crack detection ring, and a seal ring, is provided. The first chip crack detection ring includes multiple first conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the first conductive layers is not in contact with any plug. The second chip crack detection ring surrounds the first chip crack detection ring. The second chip crack detection ring includes multiple second conductive layers stacked over the substrate and electrically connected to each other. A bottom surface of a lowermost conductive layer among the second conductive layers is not in contact with any plug. The seal ring surrounds the second chip crack detection ring. The seal ring includes multiple third conductive layers stacked over the substrate and electrically connected to each other.