Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Abstract: A display device includes a first display unit emitting a green light having a first output spectrum corresponding to a highest gray level of the display device and a second display unit emitting a blue light having a second output spectrum corresponding to the highest gray level of the display device. The first output spectrum has a main wave with a first peak. The second output spectrum has a main wave with a second peak and a sub wave with a sub peak. The second peak corresponds to a main wavelength, the sub peak corresponds to a sub wavelength, and the main wavelength is less than the sub wavelength. An intensity of the second peak is greater than an intensity of the sub peak and an intensity of the first peak.

Abstract: An electronic device includes a substrate, a semiconductor unit and an insulating layer. The semiconductor unit is disposed on the substrate. The insulating layer is disposed on the semiconductor unit, and the insulating layer includes a first portion and a second portion connected to the first portion. In a top view, the first portion partially overlaps the semiconductor unit, the second portion does not overlap the semiconductor unit, and a part of an edge of the insulating layer is irregular.

Abstract: A display device includes a substrate, at least one light emitting unit bound on the substrate, a transparency controllable unit disposed on the substrate, and an integrated circuit unit overlapped with the substrate. The integrated circuit unit includes a semiconducting structure and a conductive structure overlapped with the semiconducting structure. The integrated circuit unit is electrically connected to the at least one light emitting unit and the transparency controllable unit.

Abstract: An electronic assembly is provided. The electronic assembly includes a first circuit structure including a conductive structure, a second circuit structure disposed on the first circuit structure, a plurality of electronic elements disposed on the first circuit structure, and a connecting element disposed on the first circuit layer. The connecting element is disposed between two adjacent ones of the plurality electronic elements and electrically connected to the second circuit layer and one of the two adjacent ones of the plurality of electronic elements.

Abstract: An electronic device includes a substrate, a first signal line, a second signal line, a first conductive pattern and a second conductive pattern. The substrate has a top surface and a side surface surrounding the top surface. The first signal line and a second signal line are disposed on the top surface. The first conductive pattern is disposed on the side surface and electrically connected to the first signal line. The second conductive pattern is disposed on the side surface and electrically connected to the second signal line. The first conductive pattern and the second conductive pattern have different electrical resistances.

Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.

Abstract: Abstract of Disclosure A display device includes a blue sub-pixel including a plurality of first light emitting units in a number of N1, a green sub-pixel including a plurality of second light emitting units in a number of N2, and a red sub-pixel including a plurality of third light emitting units in a number of N3. The first light emitting units, the second light emitting units and the third light emitting units all emit lights of blue color, and a green wavelength conversion layer and a red wavelength conversion layer are so arranged that the blue light from the second light emitting units and the blue light from the third light emitting units go through the green wavelength conversion layer and the red wavelength conversion layer respectively. N1 is greater than or equal to 6. N1<N2 and N1<N3, wherein N2/N1 is between 2.1 and 3.68, and N3/N1 is between 1.52 and 2.53.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: A light-emitting device, including a mount substrate, at least one light emitting element, a first light transparent member, a second light transparent member and a covering member, is disclosed. The at least one light emitting element is disposed on the mount substrate in a flip-chip manner. The first light transparent member is configured to receive the incident light emitting from the light emitting element, wherein the first light transparent member is formed of an inorganic substance and an inorganic phosphor, and includes a top surface and a first side surface contiguous to the top surface. The second light transparent member is disposed on the top surface of the first light transparent member and is formed of the inorganic substance and contains no the inorganic phosphor, and includes an externally exposed light emission surface and a second side surface contiguous to the externally exposed light emission surface.

Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.

Abstract: A light-emitting device, including a mount substrate, at least one light emitting element, a first light transparent member, a second light transparent member and a covering member, is disclosed. The at least one light emitting element is disposed on the mount substrate in a flip-chip manner. The first light transparent member is configured to receive the incident light emitting from the light emitting element, wherein the first light transparent member is formed of an inorganic substance and an inorganic phosphor, and includes a top surface and a first side surface contiguous to the top surface. The second light transparent member is disposed on the top surface of the first light transparent member and is formed of the inorganic substance and contains no the inorganic phosphor, and includes an externally exposed light emission surface and a second side surface contiguous to the externally exposed light emission surface.

Abstract: A method and system provides a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) transducer. The method and system include forming the disk of the NFT and forming the pin of the NFT. The disk is formed from a first material. The pin is formed from a second material different from the first material. The pin contacts the disk. At least a portion of the pin is between the disk and an air-bearing surface (ABS) location.

Abstract: A method of packaging an electrical device including following steps is provided. A circuit board including a substrate and a first conductive pattern is provided. The electrical device having an electrode is disposed on the circuit board. A dielectric layer is formed on the circuit board to cover the electrical device, the electrode and the first conductive pattern, wherein a first caving pattern is formed in the dielectric layer by the first conductive pattern. The dielectric layer is patterned to form a through hole and a second caving pattern connecting with the through hole and exposing the electrode. A conductive material is filled in the through hole and the second caving pattern to form a conductive via in the through hole and a second conductive pattern in the second caving pattern. The substrate is removed.

Abstract: A magnetic write apparatus includes a pole and a near field transducer. The pole extends in a yoke direction from a media facing surface where the yoke direction extends perpendicular to the media facing surface. The near field transducer includes a near field transducer cap and a near field transducer nose. The near field transducer nose is separated from the pole by the near field transducer cap and a dielectric gap and the near field transducer nose comprises a bevel surface that forms a bevel angle with a plane extending in the yoke direction.

Abstract: A method and system provides a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) transducer. The method and system include forming the disk of the NFT and forming the pin of the NFT. The disk is formed from a first material. The pin is formed from a second material different from the first material. The pin contacts the disk. At least a portion of the pin is between the disk and an air-bearing surface (ABS) location.

Abstract: A method and system provides a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) transducer. The method and system include forming the disk of the NFT and forming the pin of the NFT. The disk is formed from a first material. The pin is formed from a second material different from the first material. The pin contacts the disk. At least a portion of the pin is between the disk and an air-bearing surface (ABS) location.

Abstract: A method for fabricating a near-field transducer (NFT) for a heat assisted magnetic recording (HAMR) write apparatus is described. The HAMR write apparatus is coupled with a laser for providing energy and has a media-facing surface (MFS) configured to reside in proximity to a media during use. The method includes providing a stack on an underlayer. The stack includes an endpoint detection layer, an optical layer and an etchable layer. The optical layer is between the etchable and endpoint detection layers. The etchable layer is patterned to form a mask. A portion of the optical layer is removed. A remaining portion of the optical layer has a bevel at a bevel angle from the MFS location. The bevel angle is nonzero and acute. The NFT is provided such that the NFT has an NFT front surface adjoining the bevel and at the bevel angle from the MFS location.

Abstract: A portable device and a method for enabling the portable device are disclosed. The portable device comprises a power module, a processing module, a sensing module, and an enable control module. The power module is configured to provide electric power. The processing module is configured to run an operating system to drive the portable device when the processing module itself is enabled. The sensing module is configured to sense a gesture to generate a group of touch sensing signals, and to judge whether the group of touch sensing signals conform to a group of predefined signals so as to generate an operating system enabling signal. The enable control module is configured to temporarily enable the sensing module according to a switching signal, and to enable the processing module according to the operating system enabling signal.