Patents by Inventor Tsutomu Shoki

Tsutomu Shoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200310239
    Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate, a multilayer reflective film that reflects EUV light formed on the substrate, and a protective film formed on the multilayer reflective film. Reference marks are formed to a concave shape on the surface of the protective film. A surface layer of the reference marks contains an element that is the same as at least one of the elements contained in the protective film. A shrink region, where at least a portion of the plurality of films contained in the multilayer reflective film are shrunk, is formed at the bottom of the reference marks.
    Type: Application
    Filed: October 16, 2018
    Publication date: October 1, 2020
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Tsutomu SHOKI, Yohei IKEBE
  • Publication number: 20200249558
    Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.
    Type: Application
    Filed: October 16, 2018
    Publication date: August 6, 2020
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Tsutomu SHOKI
  • Publication number: 20200192213
    Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
    Type: Application
    Filed: February 20, 2020
    Publication date: June 18, 2020
    Applicant: HOYA CORPORATION
    Inventors: Takumi KOBAYASHI, Kazuhiro HAMAMOTO, Tatsuo ASAKAWA, Tsutomu SHOKI
  • Patent number: 10620527
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350(%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: April 14, 2020
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Patent number: 10606166
    Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: March 31, 2020
    Assignee: HOYA CORPORATION
    Inventors: Takumi Kobayashi, Kazuhiro Hamamoto, Tatsuo Asakawa, Tsutomu Shoki
  • Publication number: 20190384158
    Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>?*n+? is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<?*n+? is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.
    Type: Application
    Filed: February 20, 2018
    Publication date: December 19, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI, Takahiro ONOUE, Hirofumi KOZAKAI
  • Publication number: 20190369483
    Abstract: Provided is a substrate with conductive film for fabricating a reflective mask capable of correcting misalignment of the reflective mask from the back surface with a laser beam and the like. The substrate with conductive film is formed in which a conductive film is formed on one of the main surfaces of a mask blank substrate used in lithography, wherein an intermediate layer having a stress adjustment function is provided between the substrate and the conductive film, and transmittance of a laminated film including the intermediate layer and the conductive film for light having a wavelength of 532 nm is not less than 20%.
    Type: Application
    Filed: January 16, 2018
    Publication date: December 5, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Publication number: 20190361338
    Abstract: Provided are a reflective mask blank and a reflective mask that are capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank has a multilayer reflective film and a phase shift film that causes a shift in the phase of EUV light on a substrate in that order, wherein the phase shift film comprises a single layer film or multilayer film of two or more layers and is made of a material comprising tantalum (Ta) and titanium (Ti).
    Type: Application
    Filed: January 16, 2018
    Publication date: November 28, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Publication number: 20190361337
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350(%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Application
    Filed: August 9, 2019
    Publication date: November 28, 2019
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Toshihiko ORIHARA, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Patent number: 10481484
    Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase-shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: November 19, 2019
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Takahiro Onoue, Tsutomu Shoki
  • Patent number: 10429728
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: October 1, 2019
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20190265585
    Abstract: The present invention provides a reflective mask blank and reflective mask capable of reducing the shadowing effect of EUV lithography and forming a fine pattern. As a result, a semiconductor device can be more stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film, an absorber film and an etching mask film on a substrate in that order, wherein the absorber film is made of a material containing nickel (Ni), and the etching mask film is made of a material containing chromium (Cr) or a material containing silicon (Si).
    Type: Application
    Filed: October 18, 2017
    Publication date: August 29, 2019
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Patent number: 10347485
    Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: July 9, 2019
    Assignee: HOYA CORPORATION
    Inventors: Tsutomu Shoki, Tatsuo Asakawa, Hirofumi Kozakai
  • Patent number: 10295900
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: May 21, 2019
    Assignee: HOYA CORPORATION
    Inventors: Toshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20190079382
    Abstract: A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
    Type: Application
    Filed: March 21, 2017
    Publication date: March 14, 2019
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu SHOKI, Takahiro ONOUE
  • Patent number: 10191365
    Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 ?m×3 ?m region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 ?m?1 to 10 ?m?1 is not more than 50 nm4.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: January 29, 2019
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Tatsuo Asakawa, Tsutomu Shoki
  • Publication number: 20180356719
    Abstract: Provided is a reflective mask capable of reducing out-of-band light when transferring a prescribed pattern onto a wafer by exposure using EUV light in a process of manufacturing a semiconductor device. The mask blank substrate is provided with a base film on a substrate, the base film is formed with a material having a refractive index smaller than the substrate over a wavelength range of not less than 190 nm and not more than 280 nm, and reflectance of the base film arranged on the surface of the substrate is smaller than the reflectance of the substrate over a wavelength range of not less than 190 nm to not more than 280 nm.
    Type: Application
    Filed: November 15, 2016
    Publication date: December 13, 2018
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Tsutomu SHOKI
  • Publication number: 20180348628
    Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
    Type: Application
    Filed: August 3, 2018
    Publication date: December 6, 2018
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu SHOKI, Kazuhiro HAMAMOTO, Yohei IKEBE
  • Patent number: 10126641
    Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 ?m or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: November 13, 2018
    Assignee: HOYA CORPORATION
    Inventors: Tsutomu Shoki, Kazuhiro Hamamoto
  • Publication number: 20180275507
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Application
    Filed: May 16, 2018
    Publication date: September 27, 2018
    Applicant: HOYA CORPORATION
    Inventors: Toshihiko ORIHARA, Kazuhiro HAMAMOTO, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA