Patents by Inventor Tsutomu Shoki

Tsutomu Shoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7294438
    Abstract: This invention is a method of producing a reflective mask comprising a substrate, a reflective multilayer film formed on the substrate to reflect exposure light, and at least one layer formed on the reflective multilayer film to define a nonreflecting region for the exposure light. The method comprises the steps of: (a) patterning a layer formed on and adjacent to a topmost layer of the reflective multilayer film; and (b) removing a reaction product produced following patterning in the step (a) and deposited on an exposed surface of the reflective multilayer film which is exposed as a result of patterning in the step (a). The step (a) may be performed by the use of an oxygen-containing plasma process.
    Type: Grant
    Filed: March 18, 2004
    Date of Patent: November 13, 2007
    Assignee: Hoya Corporation
    Inventor: Tsutomu Shoki
  • Patent number: 7261980
    Abstract: An x-ray mask blank and an x-ray mask wherein, assuming that Ramax and Ramin are defined as a maximum value of Ra and a minimum value of Ra of a surface roughness (Ra: center-line average roughness) on a plurality of points within a predetermined area on an x-ray membrane 12, respectively, the surface of the x-ray membrane 12 has a surface condition so that it may satisfy an expression: (Ramax?Ramin)/(Ramax+Ramin)?0.15.
    Type: Grant
    Filed: March 31, 1998
    Date of Patent: August 28, 2007
    Assignee: Hoya Corporation
    Inventor: Tsutomu Shoki
  • Patent number: 7056627
    Abstract: A method of manufacturing a reflection type mask blank by forming a multilayer reflection film reflecting exposure light on a substrate and forming an absorber layer absorbing the exposure light on the multilayer reflection film includes a step of forming, between the substrate and the multilayer reflection film, a stress correction film opposite in direction to film stress of the multilayer reflection film and smaller in absolute value than the film stress of the multilayer reflection film, a step of heat-treating the stress correction film, and a step of heat-treating the multilayer reflection film.
    Type: Grant
    Filed: August 21, 2003
    Date of Patent: June 6, 2006
    Assignee: Hoya Corporation
    Inventors: Tsutomu Shoki, Morio Hosoya, Takeru Kinoshita
  • Patent number: 6960412
    Abstract: In a reflective-type mask blank (10) for exposure which blank includes a substrate (1) having a principal surface, a reflective multilayer film (2) formed on the principal surface, and an absorber film (4) formed on the reflective multilayer film, an intermediate layer (3) is interposed between the reflective multilayer film and the absorber film and is resistant against an etching environment of the absorber film. The intermediate layer is made of a material comprising Ta as a main metal component. The reflective multilayer film is for reflecting exposure light which travels from the outside of the reflective-type mask blank towards the principal surface. The absorber film is for absorbing the exposure light.
    Type: Grant
    Filed: February 24, 2003
    Date of Patent: November 1, 2005
    Assignee: Hoya Corporation
    Inventor: Tsutomu Shoki
  • Publication number: 20050238922
    Abstract: A multilayer-reflection-film-coated substrate includes a substrate, a multilayer reflection film formed on the substrate and reflecting an exposure light, and a conductive film formed on an opposite side of the substrate from the multilayer reflection film in a region excluding at least a peripheral portion of the substrate. The conductive film is made of a material containing chromium (Cr). The conductive film contains nitrogen (N) on a substrate side and at least one of oxygen (O) and carbon (C) on a surface side. A reflection type mask blank for exposure is obtained by forming an absorber film for absorbing the exposure light on the multilayer reflection film of the multilayer-reflection-film-coated substrate. A reflection type mask is obtained by forming a pattern on the absorber film of the reflection type mask blank for exposure.
    Type: Application
    Filed: December 22, 2004
    Publication date: October 27, 2005
    Inventors: Takeru Kinoshita, Morio Hosoya, Tsutomu Shoki
  • Publication number: 20050208389
    Abstract: A reflective mask blank has a substrate (11) on which a reflective layer (12) for reflecting exposure light in a short-wavelength region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light are successively formed. The absorber layer (16) has an at least two-layer structure including as a lower layer an exposure light absorbing layer (14) formed by an absorber for the exposure light in the short-wavelength region including the extreme ultraviolet region and as an upper layer a low-reflectivity layer (15) formed by an absorber for inspection light used in inspection of a mask pattern. The upper layer is made of a material containing tantalum (Ta), boron (B), and nitrogen (N). The content of B is 5 at % to 30 at %. The ratio of Ta and N (Ta:N) falls within a range of 8:1 to 2:7. Alternatively, the reflective mask blank has a substrate on which a multilayer reflective film and an absorber layer are successively formed.
    Type: Application
    Filed: April 11, 2003
    Publication date: September 22, 2005
    Applicant: HOYA CORPORATION
    Inventors: Shinichi Ishibashi, Tsutomu Shoki, Morio Hosoya, Yuki Shiota, Mitsuhiro Kureishi
  • Publication number: 20050100797
    Abstract: A method of manufacturing a reflection type mask blank by forming a multilayer reflection film reflecting exposure light on a substrate and forming an absorber layer absorbing the exposure light on the multilayer reflection film includes a step of forming, between the substrate and the multilayer reflection film, a stress correction film opposite in direction to film stress of the multilayer reflection film and smaller in absolute value than the film stress of the multilayer reflection film, a step of heat-treating the stress correction film, and a step of heat-treating the multilayer reflection film.
    Type: Application
    Filed: August 21, 2003
    Publication date: May 12, 2005
    Inventors: Tsutomu Shoki, Morio Hosoya, Takeru Kinoshita
  • Publication number: 20040224526
    Abstract: A method of producing a reflection type mask blank by forming, on a substrate, at least a multilayer reflection film for reflecting exposure light and an absorber layer formed on the multilayer reflection film for absorbing the exposure light is characterized in that, in order to avoid mixing at an interface between respective layers forming the multilayer reflection film due to thermal factors after deposition of the multilayer reflection film, the substrate with the multilayer reflection film is subjected to heat treatment during deposition and/or after deposition of the multilayer reflection film so as to suppress the progress of the mixing at the interface between the respective layers.
    Type: Application
    Filed: September 10, 2003
    Publication date: November 11, 2004
    Applicant: HOYA CORPORATION
    Inventor: Tsutomu Shoki
  • Publication number: 20040196579
    Abstract: This invention is a method of producing a reflective mask comprising a substrate, a reflective multilayer film formed on the substrate to reflect exposure light, and at least one layer formed on the reflective multilayer film to define a nonreflecting region for the exposure light. The method comprises the steps of: (a) patterning a layer formed on and adjacent to a topmost layer of the reflective multilayer film; and (b) removing a reaction product produced following patterning in the step (a) and deposited on an exposed surface of the reflective multilayer film which is exposed as a result of patterning in the step (a). The step (a) may be performed by the use of an oxygen-containing plasma process.
    Type: Application
    Filed: March 18, 2004
    Publication date: October 7, 2004
    Applicant: HOYA CORPORATION
    Inventor: Tsutomu Shoki
  • Patent number: 6797368
    Abstract: A reflective-type mask blank for exposure comprises a substrate (11), a reflective multilayer film (12) formed on the substrate for reflecting light, and an absorber film (14) formed on the reflective multilayer film. A protection layer (15) is formed on side surfaces of the reflective multilayer film.
    Type: Grant
    Filed: February 26, 2003
    Date of Patent: September 28, 2004
    Assignee: Hoya Corporation
    Inventor: Tsutomu Shoki
  • Patent number: 6749973
    Abstract: In a reflection type mask blank for EUV exposure, a multilayer film is formed on a substrate to reflect EUV light. An intermediate layer is formed on the multilayer film. An absorber layer is formed on the intermediate layer to absorb the EUV light. The intermediate layer is formed by a material containing Cr and at least one element selected from the group consisting of N, O, and C.
    Type: Grant
    Filed: February 14, 2002
    Date of Patent: June 15, 2004
    Assignee: Hoya Corporation
    Inventors: Tsutomu Shoki, Morio Hosoya
  • Patent number: 6737201
    Abstract: In a reflection type mask blank for EUV exposure with a substrate, a multilayer film is formed on the substrate so as to reflect an EUV light ray. A light absorber layer is formed on the multilayer film so as to absorb the EUV light ray. The multilayer film has flatness with respect to a surface thereof, and the flatness is 100 nm or less.
    Type: Grant
    Filed: November 16, 2001
    Date of Patent: May 18, 2004
    Assignee: Hoya Corporation
    Inventors: Tsutomu Shoki, Morio Hosoya
  • Publication number: 20030162104
    Abstract: In a reflective-type mask blank (10) for exposure which blank includes a substrate (1) having a principal surface, a reflective multilayer film (2) formed on the principal surface, and an absorber film (4) formed on the reflective multilayer film, an intermediate layer (3) is interposed between the reflective multilayer film and the absorber film and is resistant against an etching environment of the absorber film. The intermediate layer is made of a material comprising Ta as a main metal component. The reflective multilayer film is for reflecting exposure light which travels from the outside of the reflective-type mask blank towards the principal surface. The absorber film is for absorbing the exposure light.
    Type: Application
    Filed: February 24, 2003
    Publication date: August 28, 2003
    Applicant: HOYA CORPORATION
    Inventor: Tsutomu Shoki
  • Publication number: 20030162005
    Abstract: A reflective-type mask blank for exposure comprises a substrate (11), a reflective multilayer film (12) formed on the substrate for reflecting light, and an absorber film (14) formed on the reflective multilayer film. A protection layer (15) is formed on side surfaces of the reflective multilayer film.
    Type: Application
    Filed: February 26, 2003
    Publication date: August 28, 2003
    Applicant: HOYA CORPORATION
    Inventor: Tsutomu Shoki
  • Publication number: 20020110743
    Abstract: In a reflection type mask blank for EUV exposure, a multilayer film is formed on a substrate to reflect EUV light. An intermediate layer is formed on the multilayer film. An absorber layer is formed on the intermediate layer to absorb the EUV light The intermediate layer is formed by a material containing Cr and at least one element selected from the group consisting of N, O, and C.
    Type: Application
    Filed: February 14, 2002
    Publication date: August 15, 2002
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu Shoki, Morio Hosoya
  • Publication number: 20020076625
    Abstract: In a reflection type mask blank for EUV exposure with a substrate, a multilayer film is formed on the substrate so as to reflect an EUV light ray. A light absorber layer is formed on the multilayer film so as to absorb the EUV light ray. The multilayer film has flatness with respect to a surface thereof, and the flatness is 100 nm or less.
    Type: Application
    Filed: November 16, 2001
    Publication date: June 20, 2002
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu Shoki, Morio Hosoya
  • Patent number: 6366640
    Abstract: There is disclosed an X-ray mask comprising, on a support substrate 11a, an X-ray transmission film 12 for transmitting X-rays and an X-ray absorber pattern 13a formed on the X-ray transmission film 12 for absorbing the X-rays. The X-ray absorber pattern 13a is formed of a material which contains tantalum, boron, nitrogen and/or oxygen.
    Type: Grant
    Filed: November 12, 1999
    Date of Patent: April 2, 2002
    Assignee: Hoya Corporation
    Inventor: Tsutomu Shoki
  • Patent number: 6317480
    Abstract: An X-ray mask including a mask support formed into the shape of a frame, an X-ray-transparent film which is supported so as to extend over the surface of the frame-shaped mask support and which permits transmission of X-rays, and a desired X-ray-absorbing film pattern laid on the X-ray-transparent film, wherein the mask support has a thickness which by itself affords sufficient mechanical strength; and a step is formed along the periphery of the mask support.
    Type: Grant
    Filed: April 23, 1999
    Date of Patent: November 13, 2001
    Assignee: Hoya Corporation
    Inventors: Tsutomu Shoki, Akinori Kurikawa, Takamitsu Kawahara, Ryo Ohkubo
  • Patent number: 6128363
    Abstract: An X-ray mask blank makes it possible to manufacture an X-ray mask which has an extremely low stress, thus providing an extremely high positional accuracy. In the X-ray mask blank, an X-ray transparent film is formed on a substrate, and an X-ray absorber film is formed on the X-ray transparent film. The top and/or the bottom of the X-ray absorber film is provided with a film in which the product of the film stress and the film thickness thereof lies in the range of 0 to .+-.1.times.10.sup.4 dyn/cm.
    Type: Grant
    Filed: November 26, 1997
    Date of Patent: October 3, 2000
    Assignee: Hoya Corporation
    Inventors: Tsutomu Shoki, Takamitsu Kawahara
  • Patent number: 6127068
    Abstract: A surface of a silicon carbide film which is an x-ray membrane 12 is made so that the surface roughness thereof may be 1.0 nm or less in terms of Ra (center-line average roughness) and the surface may have no scratch of 0.25 .mu.m or more in width. The surface of the silicon carbide film, which is the x-ray membrane 12 is polished a diamond particle, of a predetermined particle diameter, and colloidal silica dispersed in a solution containing hydrogen peroxide as an abrasive material, so that the surface is highly precise.
    Type: Grant
    Filed: March 31, 1998
    Date of Patent: October 3, 2000
    Assignee: Hoya Corporation
    Inventors: Tsutomu Shoki, Kesahiro Koike