Patents by Inventor Tsutomu Shoki

Tsutomu Shoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10067419
    Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: September 4, 2018
    Assignee: HOYA CORPORATION
    Inventors: Tsutomu Shoki, Kazuhiro Hamamoto, Yohei Ikebe
  • Patent number: 10025176
    Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10?2 ?m?1 to 1 ?m?1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 ?m?1, obtained by measuring a 1 ?m×1 ?m region on the main surface with an atomic force microscope, is not more than 10 nm4.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: July 17, 2018
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Tsutomu Shoki, Junichi Horikawa
  • Patent number: 10001699
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: June 19, 2018
    Assignee: HOYA CORPORATION
    Inventors: Toshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20180149962
    Abstract: A substrate with an electrically conductive film for fabricating a reflective mask is obtained that is capable of preventing positional shift of the reflective mask during pattern transfer. Provided is a substrate with an electrically conductive film used in lithography, the substrate with an electrically conductive film having an electrically conductive film formed on one of the main surfaces of a mask blank substrate, and a coefficient of static friction of the surface of the electrically conductive film is not less than 0.25.
    Type: Application
    Filed: June 8, 2016
    Publication date: May 31, 2018
    Applicant: HOYA CORPORATION
    Inventors: Takumi KOBAYASHI, Kazuhiro HAMAMOTO, Tatsuo ASAKAWA, Tsutomu SHOKI
  • Publication number: 20180120692
    Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase- shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.
    Type: Application
    Filed: December 1, 2017
    Publication date: May 3, 2018
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Takahiro ONOUE, Tsutomu SHOKI
  • Publication number: 20180081264
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Application
    Filed: November 28, 2017
    Publication date: March 22, 2018
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Toshihiko ORIHARA, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Patent number: 9897909
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: February 20, 2018
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Hirofumi Kozakai, Youichi Usui, Tsutomu Shoki, Junichi Horikawa
  • Patent number: 9864267
    Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: January 9, 2018
    Assignee: HOYA CORPORATION
    Inventors: Yohei Ikebe, Takahiro Onoue, Tsutomu Shoki
  • Publication number: 20170329215
    Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 ?m×3 ?m region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 ?m?1 to 10 ?m?1 is not more than 50 nm4.
    Type: Application
    Filed: June 27, 2017
    Publication date: November 16, 2017
    Applicant: HOYA CORPORATION
    Inventors: KAZUHIRO HAMAMOTO, TATSUO ASAKAWA, TSUTOMU SHOKI
  • Publication number: 20170263444
    Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.
    Type: Application
    Filed: September 14, 2015
    Publication date: September 14, 2017
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu SHOKI, Tatsuo ASAKAWA, Hirofumi KOZAKAI
  • Patent number: 9726969
    Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 ?m×1 ?m region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70?BA30)/(BD70?BD30)?60(%/nm) and maximum height (Rmax)?4.5 nm.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: August 8, 2017
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Tatsuo Asakawa, Tsutomu Shoki
  • Patent number: 9720315
    Abstract: Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 ?m×3 ?m region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 ?m?1 to 10 ?m?1 is not more than 50 nm4.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: August 1, 2017
    Assignee: Hoya Corporation
    Inventors: Kazuhiro Hamamoto, Tatsuo Asakawa, Tsutomu Shoki
  • Publication number: 20170131629
    Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10?2 ?m?1 to 1 ?m?1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 ?m?1, obtained by measuring a 1 ?m×1 ?m region on the main surface with an atomic force microscope, is not more than 10 nm4.
    Type: Application
    Filed: January 27, 2017
    Publication date: May 11, 2017
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Toshihiko ORIHARA, Tsutomu SHOKI, Junichi HORIKAWA
  • Patent number: 9581895
    Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10?2 ?m?1 to 1 ?m?1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 ?m?1, obtained by measuring a 1 ?m×1 ?m region on the main surface with an atomic force microscope, is not more than 10 nm4.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: February 28, 2017
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Toshihiko Orihara, Tsutomu Shoki, Junichi Horikawa
  • Publication number: 20170038673
    Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12.
    Type: Application
    Filed: November 26, 2014
    Publication date: February 9, 2017
    Applicant: HOYA CORPORATION
    Inventors: Yohei IKEBE, Takahiro ONOUE, Tsutomu SHOKI
  • Publication number: 20170023853
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.
    Type: Application
    Filed: April 21, 2016
    Publication date: January 26, 2017
    Applicant: HOYA CORPORATION
    Inventors: Kazuhiro HAMAMOTO, Toshihiko ORIHARA, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Publication number: 20170010525
    Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 ?m or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.
    Type: Application
    Filed: July 21, 2016
    Publication date: January 12, 2017
    Applicant: HOYA CORPORATION
    Inventors: Tsutomu SHOKI, Kazuhiro HAMAMOTO
  • Publication number: 20170010527
    Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.
    Type: Application
    Filed: September 26, 2016
    Publication date: January 12, 2017
    Applicant: HOYA CORPORATION
    Inventors: Toshihiko ORIHARA, Kazuhiro HAMAMOTO, Hirofumi KOZAKAI, Youichi USUI, Tsutomu SHOKI, Junichi HORIKAWA
  • Patent number: 9535318
    Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)?L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: January 3, 2017
    Assignee: HOYA CORPORATION
    Inventors: Kazuhiro Hamamoto, Tatsuo Asakawa, Osamu Maruyama, Tsutomu Shoki
  • Patent number: 9507254
    Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.
    Type: Grant
    Filed: September 24, 2013
    Date of Patent: November 29, 2016
    Assignee: HOYA CORPORATION
    Inventors: Toshihiko Orihara, Kazuhiro Hamamoto, Hirofumi Kozakai, Tsutomu Shoki, Junichi Horikawa