Abstract: A glue dispensing apparatus includes a container, a glue dispensing head and a heating unit. The container receives glue, and the glue dispensing head is connected to the container. The heating unit is mounted on the container. The heating unit includes a temperature sensor, a heating component, and a controller electrically connected to the temperature sensor and the heating component. The controller compares the temperature of the glue with a predetermined temperature range, controls the heating component to heat the glue when the temperature of the glue is equal to or less than a lower limit of the predetermined temperature range, and controls the heating component to stop heating when the temperature of the glue is equal to or greater than an upper limit of the predetermined temperature range.

Abstract: According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; performing chemical mechanical polishing on the oxide layer and stopping on the etch stop layer; etching back the oxide layer and the etch stop layer to expose a sidewall of the vertical structure and to form an isolation layer; oxidizing the sidewall of the vertical structure and doping oxygen into the isolation layer by using a cluster oxygen doping treatment.

Abstract: A substrate structure including a carrier and a substrate is provided. The carrier includes a release layer, a dielectric layer and a metal layer. The dielectric layer is disposed between the release layer and the metal layer. The substrate includes a packaging region and a peripheral region. The peripheral region is connected to the packaging region and surrounds the packaging region. The peripheral region or the packaging region has a plurality of through holes. The substrate is disposed on the carrier. The release layer is located between the substrate and the dielectric layer. The release layer and the dielectric layer are filled in the through hole such that the substrate is separably attached to the carrier.

Abstract: Systems and methods are provided for fabricating nanowire devices on a substrate. A first nanowire and a second nanowire are formed on a substrate, the first nanowire and the second nanowire extending substantially vertically relative to the substrate. A first source region and a first drain region are formed with n-type dopants, the first nanowire being disposed between the first source region and the first drain region. A second source region and a second drain region are formed with p-type dopants, the second nanowire being disposed between the second source region and the second drain region.

Abstract: A packing set includes a stop block and a packing. The stop block is penetrated by and installed with an abutment device and the packing includes a main body and a packing kit. Both ends of the main body extend downward with a protruding part. Each protruding part has a transverse rib stretching outward from the side thereof and the other end of the transverse rib has a vertical rib extending perpendicularly. The main body has a screw for placing the packing kit. The packing kit includes a stud that penetrates the screw. The stud has an operating rod installed in one end and an abutment board installed in the other end. The stop block can be installed in both sides of any water retaining column and is used as a clamp incorporated with the packing for performing the packing action on the gate boards.

Abstract: A method for cleaning a cache of a processor includes: generating a specific command according to a request, wherein the specific command includes an operation command, a first field and a second field; obtaining an offset and a starting address according to the first field and the second field; selecting a specific segment from the cache according to the starting address and the offset; and cleaning data stored in the specific segment.

Abstract: Systems and methods for saving encoded media streamed using adaptive bitrate streaming in accordance with embodiments of the invention are disclosed. In one embodiment of the invention, a playback device configured to perform adaptive bitrate streaming of media includes a video decoder application and a processor, where the video decoder application configures the processor to select a download stream from a set of alternative streams of video data, measure streaming conditions and request a stream of video data from the alternative streams of video data, receive portions of video data from the requested stream of video data, decode the received video data, save the received video data to memory, when the received video data is from the download stream and separately download and save the corresponding portion of video data from the download stream to memory, when the received video data is not from the download stream.

Abstract: A light-emitting device of the invention includes a base, at least one light-emitting element, a wavelength transferring cover and a heat-conducting structure. The light-emitting element is disposed on the base and electrically connected to the base. The wavelength transferring cover is disposed on the base and covers the light-emitting element. The heat-conducting structure is disposed on the base and directly contacts the wavelength transferring cover.

Abstract: The present disclosure relates to a semiconductor device having a delta doped sheet layer within a transistor's source/drain region to reduce contact resistance, and an associated method. In some embodiments, a dielectric layer is disposed over the transistor. A trench is disposed through the dielectric layer to the source/drain region and a conductive contact is disposed in the trench. The source/drain region comprises a delta doped sheet layer with a doping concentration that is higher than rest of the source/drain region.

Abstract: A securing and waterproof mechanism of a floodgate apparatus includes a pillar, a water retaining gate, a pair of retaining bases and a securing member. The pillar has a retaining groove for receiving the water retaining gate. The retaining bases are attached to two opposite sides of the pillar. Each retaining base has at least one vertical channel. The securing member has two hook portions at one side. Each hook portion has a horizontal bar and a vertical bar extending upward from a distal end of the horizontal bar. Under this arrangement, the vertical bar of each hook portion is fitted in the vertical channel of the respective retaining base to prevent the securing member from sliding horizontally off the respective retaining base.

Abstract: Disclosed herein is a method for counting the number of the targets using the layer scanning method. The steps of this method includes constructing a background frame, filtering the noise of foreground frame and classifying the targets, and screening the area of targets based on layer scanning to calculate the number of targets by determining the highest positions of the respective targets. In addition, the dynamic numbers of targets are calculated using algorithm. Accordingly, the present invention is beneficial in automatically, effectively and precisely calculating the number of the targets in/out a specific area, achieving the flow control for targets and reducing artificial error upon calculation.

Abstract: A computer system is provided. The computer system includes a USB connector, a voltage generator and a detection module coupled between the voltage generator and the USB connector. The USB connector includes a power pin. The voltage generator provides a first voltage to the power pin of the USB connector. The detection module generates a detection signal, and includes an impedance device coupled between the voltage generator and the power pin of the USB connector and a determining unit. The determining unit determines whether a USB device is coupled to the USB connector according to a cross voltage of the impedance device, and provides the detection signal.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes the following operations: providing a vertical structure over a substrate; forming a first dielectric layer over the vertical structure and the substrate; laterally etching a sidewall of the first dielectric layer; replacing a portion of the first dielectric layer over the vertical structure with a second dielectric layer; and etching a portion of the first dielectric layer to expose the lateral surface of the vertical structure.

Abstract: According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; performing chemical mechanical polishing on the oxide layer and stopping on the etch stop layer; etching back the oxide layer and the etch stop layer to expose a sidewall of the vertical structure and to form an isolation layer; oxidizing the sidewall of the vertical structure and doping oxygen into the isolation layer by using a cluster oxygen doping treatment.

Abstract: Systems and methods for identifying consumer electronic products using a playback device with a product identifier in accordance with embodiments of the invention are disclosed. One embodiment includes a processor, and memory configured to store a product identifier, where the product identifier is associated with a specific product and is associated with cryptographic information, and user account data, where the user account data is associated with a user account. In addition, the processor is configured by an application to receive a request for registration from a playback device, receive a product identifier from the playback device, retrieve cryptographic information using the playback device, and send user account data to the playback device encrypted using at least the cryptographic information associated with the product identifier.

Abstract: A securing and waterproof mechanism of a floodgate apparatus includes a pillar, a water retaining gate, a pair of retaining bases and a securing member. The pillar has a retaining groove for receiving the water retaining gate. The retaining bases are attached to two opposite sides of the pillar. Each retaining base has at least one vertical channel. The securing member has two hook portions at one side. Each hook portion has a horizontal bar and a vertical bar extending upward from a distal end of the horizontal bar. Under this arrangement, the vertical bar of each hook portion is fitted in the vertical channel of the respective retaining base to prevent the securing member from sliding horizontally off the respective retaining base.

Abstract: According to an exemplary embodiment, a chip is provided. The chip includes a first vertical device having a first threshold and second vertical device having a second threshold. The first vertical device includes a first source; a first channel over the first source; a first drain over the first channel; a first conductive layer adjacent to the first channel; and a first gate adjacent to the first conductive layer. The second vertical device includes a second source; a second channel over the second source; a second drain over the second channel; a second conductive layer adjacent to the second channel; and a second gate adjacent to the second conductive layer.

Abstract: A device and a method of automatic display brightness control are provided. Human fatigue index and environmental factors for dry eyes are combined as an indicator to dynamically adjust the display brightness. Heart rate variability (HRV) is used as the human fatigue index, and the environmental CO2 concentration is used as the environmental factors for dry eyes here.

Abstract: A method and apparatus for forming a CMOS device are provided. The CMOS device may include an N-type channel region formed of an III-V material and a P-type channel region formed of a germanium material. Over each channel may be formed corresponding gates and source/drain regions. The source/drain regions may be formed of a germanium material and one or more metallization layers. An anneal may be performed to form ohmic contacts for the source/drain regions. Openings may be formed in a dielectric layer covering the device and conductive plugs may be formed to provide contact to the source/drain regions.

Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.