Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.

Abstract: A substrate structure including a carrier and a substrate is provided. The carrier includes a release layer, a dielectric layer and a metal layer. The dielectric layer is disposed between the release layer and the metal layer. The substrate includes a packaging region and a peripheral region. The peripheral region is connected to the packaging region and surrounds the packaging region. The peripheral region or the packaging region has a plurality of through holes. The substrate is disposed on the carrier. The release layer is located between the substrate and the dielectric layer. The release layer and the dielectric layer are filled in the through hole such that the substrate is separably attached to the carrier.

Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract: Systems and methods for application identification in accordance with embodiments of the invention are disclosed. In one embodiment, a user device includes a processor and memory configured to store an application, a session manager, an application identifier, and at least one shared library, and the processor is configured by the session manager to communicate the application identifier and the application identifier data to an authentication server and permit the execution of the application in response to authentication of the application by the authentication server.

Abstract: A tunnel field-effect transistor and method fabricating the same are provided. The tunnel field-effect transistor includes a drain region, a source region with opposite conductive type to the drain region, a channel region disposed between the drain region and the source region, a metal gate layer disposed around the channel region, and a high-k dielectric layer disposed between the metal gate layer and the channel region.

Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.

Abstract: According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a substrate; forming an etch stop layer over the vertical structure; forming an oxide layer over the etch stop layer; performing chemical mechanical polishing on the oxide layer and stopping on the etch stop layer; etching back the oxide layer and the etch stop layer to expose a sidewall of the vertical structure and to form an isolation layer; oxidizing the sidewall of the vertical structure and doping oxygen into the isolation layer by using a cluster oxygen doping treatment.

Abstract: A substrate structure including a carrier and a substrate is provided. The carrier includes a release layer, a dielectric layer and a metal layer. The dielectric layer is disposed between the release layer and the metal layer. The substrate includes a packaging region and a peripheral region. The peripheral region is connected to the packaging region and surrounds the packaging region. The peripheral region or the packaging region has a plurality of through holes. The substrate is disposed on the carrier. The release layer is located between the substrate and the dielectric layer. The release layer and the dielectric layer are filled in the through hole such that the substrate is separably attached to the carrier.

Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.

Abstract: A method of wireless audio transmission and playback includes steps of: a) dividing, by a host, the audio data into audio segments; b) transmitting, by the host, the audio segments to each of audio playback devices; c) transmitting to the host, by each of the audio playback devices, with respect to each of the audio segments received thereby, an acknowledgment indicating that the audio playback device has received the audio segment; and d) when determining, by the host based on the acknowledgment(s) thus received, that at least one of the audio playback devices has received a first specific audio segment, controlling all of the audio playback devices having received the first audio segment to play the first audio segment synchronously with each other.

Abstract: Systems and methods for application identification in accordance with embodiments of the invention are disclosed. In one embodiment, a user device includes a processor and memory configured to store an application, a session manager, an application identifier, and at least one shared library, and the processor is configured by the session manager to communicate the application identifier and the application identifier data to an authentication server and permit the execution of the application in response to authentication of the application by the authentication server.

Abstract: An electronic apparatus and a data verification method using the same are provided. The electronic apparatus includes a first read-only memory having first data, a second read-only memory having second data and a controller. A correspondence relation exists between the first data and the second data. The controller is coupled to the first read-only memory and the second read-only memory. The controller reads first sub-data of the first data from the first read-only memory, and reads second sub-data of the second data corresponding to the first sub-data from the second read-only memory according to the correspondence relation. The first sub-data includes to-be-verified data. The controller performs a verification operation to the to-be-verified data according to the first sub-data, the second sub-data and the correspondence relation.

Abstract: An electronic apparatus and a data verification method using the same are provided. The electronic apparatus includes a first read-only memory having first data, a second read-only memory having second data and a controller. A correspondence relation exists between the first data and the second data. The controller is coupled to the first read-only memory and the second read-only memory. The controller reads first sub-data of the first data from the first read-only memory, and reads second sub-data of the second data corresponding to the first sub-data from the second read-only memory according to the correspondence relation. The first sub-data includes to-be-verified data. The controller perfoi ins a verification operation to the to-be-verified data according to the first sub-data, the second sub-data and the correspondence relation.

Abstract: An electronic apparatus and a detection method using the same are provided. The electronic apparatus includes a processor, a platform controller, and an auxiliary controller. The processor includes a first bus compatible with a first standard. The platform controller is coupled to the processor, and the processor is connected to peripheral devices of the electronic apparatus through the platform controller or the first bus according to the first standard. The auxiliary controller is coupled to the processor through the first bus, and the processor controls the auxiliary controller through a second bus and the platform controller. The auxiliary controller receives a detection signal to detect the processor, the platform controller, or at least one of the peripheral devices in the electronic apparatus through the first bus compatible with the first standard according to the detection signal.

Abstract: Systems and methods for saving encoded media streamed using adaptive bitrate streaming in accordance with embodiments of the invention are disclosed. In one embodiment of the invention, a playback device configured to perform adaptive bitrate streaming of media includes a video decoder application and a processor, where the video decoder application configures the processor to select a download stream from a set of alternative streams of video data, measure streaming conditions and request a stream of video data from the alternative streams of video data, receive portions of video data from the requested stream of video data, decode the received video data, save the received video data to memory, when the received video data is from the download stream and separately download and save the corresponding portion of video data from the download stream to memory, when the received video data is not from the download stream.

Abstract: A bone implant drill includes a bearing received in a sleeve. A transmission shaft includes a rod extending through the bearing and a transmission member formed on an end of the rod and received in the sleeve. The other end of the rod extends beyond the sleeve. A cutting rod includes a cutter, a coupling member received in the sleeve, and a positioning member between the cutter and the coupling member. The cutter and the coupling member are provided on two ends of the cutting rod respectively. The coupling member includes second teeth releasably engageable with first teeth on a free end of the transmission member. An elastic element is mounted in the sleeve. The elastic element includes a first end mounted around the coupling member and abutting the positioning member. The elastic element further includes a second end mounted around the transmission member and abutting the bearing.

Abstract: A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.

Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.