Abstract: Tracking address ranges for computer memory errors including detecting, by memory logic, an error at a memory address, the memory address representing one or more memory cells at a physical location of computer memory; reporting, by the memory logic to memory firmware, the detected error including providing the memory firmware with the memory address; identifying, by the memory firmware, an address range affected by the detected error including scanning the computer memory in dependence upon the memory address; determining, by the memory firmware, a region size based on the address range affected by the detected error; and populating an entry in a mark table corresponding to the detected error, including populating a field specifying the region size and a field specifying a match address corresponding to the memory address.

Abstract: A three-dimensional stacked (3DS) memory module includes multiple memory chips physically integrated with a data I/O chip. The data I/O chip includes multiple data interfaces and multiple respectively corresponding data buffers. A memory controller routes data traffic through all available data interfaces for maximum bandwidth. In some circumstances, the memory controller directs the data I/O chip to de-activate one or more of the data interfaces (for example, to reduce power consumption). All subsequent data traffic to and from the memory module is routed through the remaining active interfaces. All physical addresses in the 3DS memory module are addressable through the remaining active interfaces. In some circumstances, the memory controller directs the data I/O chip to re-activate some or all of the de-activated data interfaces. Once re-activated, subsequent data traffic to and from the memory module can again be routed through all active interfaces.

Abstract: Managing entries in a mark table of computer memory errors including identifying at least two mark table entries as candidates for merger, wherein each mark table entry indicates an error at a location in a computer memory; and merging the identified mark table entries into a single mark table entry, including removing one of the identified mark table entries from the mark table.

Abstract: A technique relates to operating a memory controller. A feedback mode is initiated such that an identified memory device of first memory devices includes an identified bit lane on a data bus to be utilized for testing. A process includes sending commands on the 1-N bit lanes of the command address bus to a buffer and duplicating commands designated for a selected one of the 1-N bit lanes. The process includes sending the duplicated commands on the identified bit lane in route to the buffer, and receiving a result of a parity check for the commands sent on the 1-N bit lanes, such that when the result is a pass the process ends. When the result is a fail, a duplicated parity check is performed using duplicated commands on the identified bit lane in place of the selected one. When the duplicated parity check passes, the selected one is bad.

Abstract: A technique relates to operating a memory controller. The memory controller drives first memory devices and second memory devices of the memory controller in a dual channel mode. A first error correcting code (ECC) memory device and a second ECC memory device protect the first memory devices and the second memory devices. The memory controller drives the first memory devices and the second memory devices in a single channel mode such that the second ECC memory device is a spare memory device, and the first ECC memory device protects the first memory devices and the second memory devices. The memory controller is configured to switch between the dual channel mode and the single channel mode.

Abstract: Confirming memory marks indicating an error in computer memory including detecting, by memory logic responsive to a memory read operation, an error in at a memory location; marking, by the memory logic in an entry in a hardware mark table, the memory location as containing the error, the entry including one or more parameters for correcting the error; and retrying, by the memory logic, the memory read operation, including: responsive to again detecting the error in the memory location, determining whether the error is correctable at the memory location using the parameters included in the entry; and if the error is correctable at the memory location using the one or more parameters included in the entry, confirming the error in the entry of the hardware mark table.

Abstract: A memory subsystem is disclosed comprising at least one memory module, the memory module having a substrate to which a plurality of memory chips is mounted and a voltage regulator, the voltage regulator receiving a power supply signal from a system power supply and outputting two or more power signals, each power signal providing a different, regulated voltage, which regulated voltages are each routed to each of the memory chips; and a redundant voltage regulator external to and not mounted on the memory module and configured to output two or more power signals, providing external different, regulated voltages which are the same voltages as the voltages output by the voltage regulator on the memory module, and supplying the two or more signals to the memory module.

Abstract: An embodiment includes a method for use in operating a memory chip, the method comprising: operating the memory chip with an increased burst length relative to a standard burst length of the memory chip; and using the increased burst length to access metadata during a given operation of the memory chip. Another embodiment includes a memory module, comprising a plurality of memory chips, each memory chip being operable with an increased burst length relative to a standard burst length of the memory chip, the increased burst length being used to access metadata during a given operation of the memory module.

Abstract: An aspect includes receiving a request to write data to a memory that includes a stack of memory devices, each of the memory devices communicatively coupled to at least one other of the memory devices in the stack via a through silicon via (TSV). The write request is received by a hypervisor from an application executing on a virtual machine managed by the hypervisor. In response to receiving the request a latency requirement of accesses to the write data is determined. A physical location on a memory device in the stack of memory devices is assigned to the write data based at least in part on the latency requirement and a position of the memory device in the stack of memory devices. A write command that includes the physical location and the write data is sent to a memory controller.

Abstract: An aspect includes receiving a request to access one or more memory devices in a stack of memory devices in a memory. Each of the memory devices are communicatively coupled to at least one other of the memory devices in the stack via a through silicon via (TSV). A current operating mode of the memory is determined in response to receiving the request. Based at least in part on the current operating mode of the memory being a first mode, a chip select switch is activated to provide access to exactly one of the memory devices in the stack of memory devices. Based at least in part on the current operating mode of the memory being a second mode, the chip select switch is activated to access all of the memory devices in the stack in parallel. The request is serviced using the activated chip select switch.

Abstract: One or more memory systems, architectural structures, and/or methods of storing information in memory devices is disclosed to improve the data bandwidth and or to reduce the load on the communication links. The system may include one or more memory devices, one or more memory control circuits and one or more data buffer circuits. The memory system, architectural structure and/or method improves the ability of the communications links to transfer data downstream to the data buffer circuits. In one aspect, the memory control circuit receives a store command and a store data tag (Host tag) from a Host and sends the store data command and the store data tag to the data buffer circuits. No store data tag or control signal is sent over the communication links between the Host and the data buffer circuits, only data is sent over the communication links between the Host and the data buffer circuits.

Abstract: One or more memory systems, architectural structures, and/or methods of storing information in memory devices is disclosed to improve the data bandwidth and or to reduce the load on the communication links. The system may include one or more memory devices, one or more memory control circuits and one or more data buffer circuits. In one aspect, the data buffer circuit receives a next to be used store data tag from a Host wherein the store data tag specifies the data buffer location in the data buffer circuit to store data, and in response to receiving store data from the Host, moves the data received at the data buffer circuit into the data buffer pointed to by the previously received store data tag.

Abstract: Performing error correction in computer memory including receiving a read request targeting a read address within the computer memory; accessing a mark table comprising a plurality of entries, each entry including a field specifying a region size, a field specifying a match address, and a field specifying a mark location; performing a lookup of the mark table using the read address including, for each entry in the mark table: generating a mask based on the region size stored in the entry; determining, based on the mask, whether the read address is within a memory region specified by the match address and region size stored in the entry; and if the read address is within the memory region specified by the match address and region size stored in the entry, performing error correction using the mark location stored in the entry.

Abstract: Tracking address ranges for computer memory errors including detecting, by memory logic, an error at a memory address, the memory address representing one or more memory cells at a physical location of computer memory; reporting, by the memory logic to memory firmware, the detected error including providing the memory firmware with the memory address; identifying, by the memory firmware, an address range affected by the detected error including scanning the computer memory in dependence upon the memory address; determining, by the memory firmware, a region size based on the address range affected by the detected error; and populating an entry in a mark table corresponding to the detected error, including populating a field specifying the region size and a field specifying a match address corresponding to the memory address.

Abstract: A three-dimensional stacked (3DS) memory module includes multiple memory chips and a data I/O chip physically integrated into the 3D stack. The data I/O chip includes multiple data interfaces and multiple respectively corresponding data buffers. A memory controller routes data traffic through all available data interfaces for maximum bandwidth. In some circumstances, the memory controller directs the data I/O chip to shut down (de-activate) one or more of the data interfaces (for example, to reduce power consumption of the memory module). All subsequent data traffic to and from the memory module is routed through the remaining active interfaces. All physical addresses in the 3DS memory module are addressable through the remaining active interfaces. In some circumstances, the memory controller directs the data I/O chip to re-activate some or all of the de-activated data interfaces. Once re-activated, subsequent data traffic to and from the memory module can again be routed through all active interfaces.

Abstract: Aspects of the invention include fetching data requested by a requestor from a primary memory in a memory system that includes the primary memory and a secondary memory mirroring the primary memory. An error status of the data fetched from the primary memory is determined. The error status is one of correctable error (CE), uncorrectable error (UE), and no error. Based at least in part on determining that the data fetched from the primary memory has the error status of no error, the data fetched from the primary memory is output to the requestor. Based at least in part on determining that the data fetched from the primary memory has the error status of UE or CE, the data requested by the requestor is fetched from the secondary memory.

Abstract: A three-dimensional stacked (3DS) memory module includes multiple memory chips physically integrated with a data I/O chip. The data I/O chip includes multiple data interfaces and multiple respectively corresponding data buffers. A memory controller routes data traffic through available data interfaces for maximum bandwidth. In some circumstances, the memory controller directs the data I/O chip to de-activate one or more of the data interfaces (for example, to reduce power consumption). All subsequent data traffic to and from the memory module is routed through the remaining active interfaces. All physical addresses in the 3DS memory module are addressable through the remaining active interfaces. In some circumstances, the memory controller directs the data I/O chip to re-activate some or all of the de-activated data interfaces. Once re-activated, subsequent data traffic to and from the memory module can again be routed through all active interfaces.

Abstract: A three-dimensional stacked (3DS) memory module includes multiple memory chips and a data I/O chip physically integrated into the 3D stack. The data I/O chip includes multiple data interfaces and multiple respectively corresponding data buffers. A memory controller routes data traffic through all available data interfaces for maximum bandwidth. In some circumstances, the memory controller directs the data I/O chip to shut down (de-activate) one or more of the data interfaces (for example, to reduce power consumption of the memory module). All subsequent data traffic to and from the memory module is routed through the remaining active interfaces. All physical addresses in the 3DS memory module are addressable through the remaining active interfaces. In some circumstances, the memory controller directs the data I/O chip to re-activate some or all of the de-activated data interfaces. Once re-activated, subsequent data traffic to and from the memory module can again be routed through all active interfaces.

Abstract: An aspect includes coherency management between volatile memory and non-volatile memory in a through-silicon via (TSV) module of a computer system. A plurality of TSV write signals is simultaneously provided to the volatile memory and the non-volatile memory. A plurality of values of the TSV write signals is captured within a buffer of the non-volatile memory corresponding to a data set written to the volatile memory. Storage space is freed within the buffer as the data set corresponding to the values of the TSV write signals stored within the buffer is written to a non-volatile memory array within the non-volatile memory.

Abstract: A system and method for efficient data eye training reduces the time and resources spent calibrating one or more memory devices. A temporal calibration mechanism reduces the time and resources for calibration by reducing the number tests needed to sufficiently determine the boundaries of the data eye of the memory device. For one or more values of the voltage reference, the temporal calibration mechanism performs a minimal number of tests to find the edges of the data eye for the hold and setup times.