Abstract: Disclosed is a method for short-term traffic risk prediction of road sections by using roadside observation data.

Abstract: An optical lens system includes, in order from a magnified side to a minified side, a first lens group of positive refractive power and a second lens group of positive refractive power. The first lens group includes a first lens and a second lens, and the second lens group includes a third lens and a fourth lens. One of the third lens and the fourth lens includes one aspheric surface, and each of the lenses in the optical lens system is a singlet lens. The optical lens satisfies a condition of TE(?=400)>94%, where TE(?=400) denotes an overall transmittance of all of the lenses in the optical lens system measured at a wavelength of 400 nm.

Abstract: An unmanned ground vehicle (UGV) includes one or more motors configured to drive one or more wheels of the UGV, a memory storing instructions, and a processor coupled to the one or more motors and the memory. The processor is configured to execute the instructions to cause the UGV to determine location information of a movable target; calculate a direction and a speed for the unmanned ground vehicle based on the determined location information; and drive the one or more motors to move the unmanned ground vehicle in the calculated direction at the calculated speed to follow the movable target when the movable target moves.

Abstract: A method of cutting fins includes the following steps. A photomask including a snake-shape pattern is provided. A photoresist layer is formed over fins on a substrate. A photoresist pattern in the photoresist layer corresponding to the snake-shape pattern is formed by exposing and developing. The fins are cut by transferring the photoresist pattern and etching cut parts of the fins.

Abstract: A memory device includes a bottom electrode, a tunneling junction disposed over the bottom electrode, and a top electrode disposed over the tunneling junction. The top electrode includes a first top electrode layer and a second top electrode layer above the first top electrode layer. The first and second top electrode layers include different material compositions. The first top electrode layer is thinner than the tunneling junction, and the second top electrode layer is thicker than the tunneling junction.

Abstract: An actuator including a frame body, a base, a first drive assembly, a second drive assembly, and an optical element is provided. The frame body includes the first frame portion and the second frame portion. The base surrounds the frame body. The first drive assembly is disposed between the base and the first frame portion. The second drive assembly is disposed between the base and the second frame portion. When the actuator is set to a first mode, a phase difference between the first drive assembly and the second drive assembly is substantially 0 degrees, and the optical element exhibits a first actuation mode relative to the base. Alternatively, when the actuator is set to the second mode, the phase difference between the first drive assembly and the second drive assembly is substantially 90 degrees, and the optical element exhibits a second actuation mode relative to the base.

Abstract: An optical device including a holder and a light transmissive plate is provided. The holder includes a first frame and a second frame connected to each other, and the first frame is located inside the second frame. A light transmissive plate is disposed inside the first frame and has a surface. The first frame has at least one inner surface and includes at least one surface supporting part, and the surface supporting part extends along a direction from the inner surface of the first frame to the center of the first frame, and the surface of the light transmissive plate is at least partially supported by the surface supporting part of the first frame. The surface supporting part is non-continuously distributed along the inner surface of the first frame. The disclosure further provides a projector including the optical device.

Abstract: An optical element adjusting mechanism is provided, including a frame, a carrier, and an optical element. The frame includes a plurality of first positioning portions. The carrier includes a hollow body, a first axial portion connected to the hollow body, and a plurality of second positioning portions connected to the hollow body. The hollow body is connected to the frame through the first axial portion. The plurality of second positioning portions are disposed corresponding to the plurality of first positioning portions. The optical element is fixed on the hollow body. The plurality of second positioning portions are fixed to the plurality of first positioning portions through a plurality of adhesives. An optical element adjusting system and a projection device are also proposed. The optical element adjusting mechanism, the optical element adjusting system, and the projection device quickly, easily, and accurately adjust a rotation angle of the optical element.

Abstract: The invention provides an optical module and a projection apparatus. The optical module includes a base, a first frame, an optical element, and at least one first driving assembly. The first frame is disposed in the base and includes a first body and a pair of first shaft portions, the first shaft portion extending outward from the first body, and the first body including a pair of first inner folded edges. The optical element is disposed between the pair of first inner folded edges. The first driving assembly and the optical element abut against two opposite sides of one of the first inner folded edges, respectively, and the first driving assembly is configured to drive the first body to swing relative to the base by taking the first shaft portion as a rotating shaft.

Abstract: An interconnection structure, along with methods of forming such, are described. The interconnection structure includes a first portion of a conductive layer, a second portion of the conductive layer disposed adjacent the first portion of the conductive layer, and a dielectric foam disposed between the first and second portions of the conductive layer. The dielectric foam includes fluid gaps filled with carbon dioxide gas.

Abstract: A device includes a fin extending from a substrate; a gate stack over and along sidewalls of the fin; a gate spacer along a sidewall of the gate stack; an epitaxial source/drain region in the fin and adjacent the gate spacer, the epitaxial source/drain region including a first epitaxial layer on the fin, the first epitaxial layer including silicon and arsenic; and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin; and a contact plug on the second epitaxial layer.

Abstract: An interconnect structure includes dielectric layer, a first conductive feature, a second conductive feature, a third conductive feature, and a dielectric fill. The first conductive feature is disposed in the dielectric layer. The second conductive feature is disposed over the first conductive feature. The second conductive feature includes a first conductive layer disposed over the first conductive feature, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The first conductive layer, the second conductive layer and the third conductive layer have substantially the same width. The third conductive feature is disposed over the dielectric layer. The dielectric fill is disposed over the dielectric layer between the second conductive feature and the third conductive feature.

Abstract: A semiconductor device, includes a device layer comprising: a channel region; a gate stack over and along sidewalls of the channel region and a first insulating fin; and an epitaxial source/drain region adjacent the channel region, wherein the epitaxial source/drain region extends through the first insulating fin. The semiconductor device further includes a front-side interconnect structure on a first side of the device layer; and a backside interconnect structure on a second side of the device layer opposite the first side of the device layer. The backside interconnect structure comprises a backside source/drain contact that is electrically connected to the epitaxial source/drain region.

Abstract: A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.

Abstract: An optical device including a bearing structure and a light-transmitting plate body is provided. The bearing structure includes a first frame body and a second frame body connected to each other, and the first frame body is located in the second frame body. The first frame body has at least one first inner surface, and the at least one first inner surface has at least one limiting protruding portion protruding from the at least one first inner surface. The light-transmitting plate body is disposed in the first frame body and is fixed to the first frame body. The light-transmitting plate body has at least one first edge, and the at least one first edge of the light-transmitting plate body is positioned through the at least one limiting protruding portion.

Abstract: The present disclosure describes various non-planar semiconductor devices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the source, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions these various non-planar semiconductor devices.

Abstract: An electronic device includes a processor, a battery, a charging circuit, a controller, and an arithmetic logic unit. The processor is capable of operating at a preset frequency or a low frequency. The charging circuit is electrically connected to an external power supply and a battery and transmits a disconnection signal and to be powered by the battery when the external power supply and the charging circuit are changed from a connected state to a disconnected state. The controller is configured to transmit a first control signal when the external power supply and the charging circuit are changed from the connected state to the disconnected state. The arithmetic logic unit is configured to transmit a frequency reduction signal to the processor according to the disconnection signal and the first control signal, so that the processor reduces the preset frequency to the low frequency and operates at the low frequency.

Abstract: In some embodiments, the present disclosure relates to a method of forming an interconnect. The method includes forming an etch stop layer (ESL) over a lower conductive structure and forming one or more dielectric layers over the ESL. A first patterning process is performed on the one or more dielectric layers to form interconnect opening and a second patterning process is performed on the one or more dielectric layers to increase a depth of the interconnect opening and expose an upper surface of the ESL. A protective layer is selectively formed on sidewalls of the one or more dielectric layers forming the interconnect opening. A third patterning process is performed to remove portions of the ESL that are uncovered by the one or more dielectric layers and the protective layer and to expose the lower conductive structure. A conductive material is formed within the interconnect opening.

Abstract: The present disclosure relates to a semiconductor structure including an interconnect structure disposed over a semiconductor substrate. A lower metal line is disposed at a first height over the semiconductor substrate and extends through a first interlayer dielectric layer. A second interlayer dielectric layer is disposed at a second height over the semiconductor substrate and comprises a first dielectric material. An upper metal line is disposed at a third height over the semiconductor substrate. A via is disposed at the second height. The via extends between the lower metal line and the upper metal line. A protective dielectric structure is disposed at the second height. The protective dielectric structure comprises a protective dielectric material and is disposed along a first set of opposing sidewalls of the via, the protective dielectric material differing from the first dielectric material.

Abstract: The present disclosure relates to a semiconductor structure including an interconnect structure disposed over a semiconductor substrate. A lower metal line is disposed at a first height over the semiconductor substrate and extends through a first interlayer dielectric layer. A second interlayer dielectric layer is disposed at a second height over the semiconductor substrate and comprises a first dielectric material. An upper metal line is disposed at a third height over the semiconductor substrate. A via is disposed at the second height. The via extends between the lower metal line and the upper metal line. A protective dielectric structure is disposed at the second height. The protective dielectric structure comprises a protective dielectric material and is disposed along a first set of opposing sidewalls of the via, the protective dielectric material differing from the first dielectric material.