Abstract: A power dividing and combining device comprising a resonance body, a plurality of circuit boards, an upper cover and a lower cover is provided. The resonance body comprises a solid conductive body, a plurality of first dividing elements, a plurality of second dividing elements, a signal-receiving end and a signal-transmitting end. The solid conductive body has a first surface, a second surface opposite to the first surface, and a plurality of side surfaces connecting the first surface and the second surface. The first dividing elements are disposed on the first surface and separate a plurality of first resonance channels on the first surface. The first resonance channels intersect at a first common region on the first surface. The second dividing elements are disposed on the second surface and separate a plurality of second resonance channels on the second surface. The second resonance channels intersect at a second common region on the second surface.

Abstract: A memristor may include an exchange-coupled composite (ECC) portion to provide three or more nonvolatile magneto-resistive states. The ECC portion may include a continuous layer and a granular layer magnetically exchange coupled to the continuous layer. A plurality of memristors may be used in a system to, for example, define a neural network.

Abstract: An image identification method is provided, including: storing at least one normal state image of at least one test object; an automatic codec receiving the at least one normal state image to become a trained automatic codec; at least one camera device capturing at least one state image of the at least one test object; a computer device receiving the at least one state image, and the trained automatic codec performing feature extraction and reconstruction on the at least one state image to generate at least one reconstructed state image; and the computer device comparing the at least one state image and the at least one reconstructed state image, and determining whether the at least one state image is a normal state image. The present invention also provides an image identification system.

Abstract: A computing system including a plurality of processing devices configured to execute a Mixture-of-Experts (MoE) layer. The processing devices are configured to execute the MoE layer at least in part by receiving an input tensor including input tokens. Executing the MoE layer further includes computing a gating function output vector based on the input tensor and computing a sparse encoding of the input tensor and the gating function output vector. The sparse encoding indicates one or more destination expert sub-models. Executing the MoE layer further includes dispatching the input tensor for processing at the one or more destination expert sub-models, and further includes computing an expert output tensor. Executing the MoE layer further includes computing an MoE layer output at least in part by computing a sparse decoding of the expert output tensor. Executing the MoE layer further includes conveying the MoE layer output to an additional computing process.

Abstract: The present invention provides a wireless communication method of an electronic device, wherein the electronic device includes a first radio and a second radio, a maximum bandwidth or a maximum. NSS supported by the first radio is different from a maximum bandwidth or a maximum NSS supported by the second radio. The wireless communication method includes the step of: using the first radio to communicate with another electronic device; determining if parameters of the electronic device satisfy a condition; and in response to the parameters of the electronic device satisfying the condition, enabling the second radio and using the second radio to communicate with the another electronic device, and disabling the first radio.

Abstract: A neural-signal amplifier includes an amplifier, a switched-capacitor circuit-input unit, a switched-capacitor feedback-circuit unit, and a switched-capacitor circuit-output unit. Each of the switched-capacitor circuit-input unit, the switched-capacitor feedback-circuit unit, and the switched-capacitor circuit-output unit includes a plurality of differential switches, a plurality of common mode switches, and a plurality of capacitors. By controlling the switches to turn on or performing the switched-capacitor operation, the neural-signal amplifier is controlled to suppress the DC drift and reconstruct the DC input of the common-mode power supply.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Certain embodiments of a semiconductor device and a method of forming a semiconductor device comprise forming a high-k gate dielectric layer over a short channel semiconductor fin. A work function metal layer is formed over the high-k gate dielectric layer. A seamless metal fill layer is conformally formed over the work function metal layer.

Abstract: Certain embodiments according to the present invention provide sleeve devices suitable for a wide range of therapeutic uses. In accordance with certain embodiments, the therapeutic sleeve device includes a nanofiber fabric assembly, which defines a plurality of pores, and at least one layer of cells embedded in the nanofiber fabric assembly.

Abstract: The present invention provides an implantable bioreactor comprising cells enclosed within an enclosure, said cells being capable of producing paracrine factors, wherein the enclosure is collapsible or expandable or both or neither, wherein the enclosure is semipermeable such that it provides containment of the cells preventing the egress of the cells while further providing a barrier that shields the cells from immunological attack, and wherein the enclosure is permeable to the entire secretome of the cell including exosomes, nucleic acids and proteins. The implantable bioreactor can have various configurations and can house internally a cell culture matrix than can include hydrogels, microbeads, and nanofiber matrices along with other active agents.

Abstract: A method for promoting healing of tissue by delivering a bioreactor into a subject is provided. The bioreactor is an enclosed housing with paracrine factor producing cells enclosed within the housing. The housing is impermeable to the paracrine factor producing cells, impermeable to immunological cells outside of the housing, and permeable to paracrine factors produced by the paracrine factor producing cells. The paracrine factors produced by the paracrine factor producing cells are released out of the housing to promote healing of the tissue.

Abstract: The present application relates to systems and methods for non-invasively determining at least one of left ventricular end diastolic pressure (LVEDP) or pulmonary capillary wedge pressure (PCWP) in a subject's heart, comprising: receiving, by a computer, a plurality of signals from a plurality of non-invasive sensors that measure a plurality of physiological effects that are correlated with functioning of said subject's heart, said plurality of physiological effects including at least one signal correlated with left ventricular blood pressure and at least one signal correlated with timing of heartbeat cycles of said subject's heart; training a machine learning model on said computer using said plurality of signals for periods of time in which said plurality of signals were being generated during a heart failure event of said subject's heart; determining said LVEDP or PCWP using said machine learning model at a time subsequent to said training and subsequent to said heart failure event.

Abstract: A neural-signal amplifier includes an amplifier, a switched-capacitor circuit-input unit, a switched-capacitor feedback-circuit unit, and a switched-capacitor circuit-output unit. Each of the switched-capacitor circuit-input unit, the switched-capacitor feedback-circuit unit, and the switched-capacitor circuit-output unit includes a plurality of differential switches, a plurality of common mode switches, and a plurality of capacitors. By controlling the switches to turn on or performing the switched-capacitor operation, the neural-signal amplifier is controlled to suppress the DC drift and reconstruct the DC input of the common-mode power supply.

Abstract: Certain embodiments according to the present invention provide sleeve devices suitable for a wide range of therapeutic uses. In accordance with certain embodiments, the therapeutic sleeve device includes a nanofiber fabric assembly, which defines a plurality of pores, and at least one layer of cells embedded in the nanofiber fabric assembly.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Certain embodiments according to the present invention provide sleeve devices suitable for a wide range of therapeutic uses. In accordance with certain embodiments, the therapeutic sleeve device includes a nanofiber fabric assembly, which defines a plurality of pores, and at least one layer of cells embedded in the nanofiber fabric assembly.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.