Abstract: A package structure is provided. The package structure includes a substrate, a first electronic component, a first electrical connector, and a protective layer. The first electronic component is over the substrate. The first electrical connector is between the substrate and the first electronic component. The protective layer encapsulates the first electrical connector. The protective layer has a first curved lateral surface concave toward the first electrical connector and recessed with respect to a lateral surface of the first electronic component.

Abstract: A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer.

Abstract: A gas dispenser utilized in a deposition apparatus is provided. The gas dispenser includes a showerhead comprising a plurality of holes, and a mask layer formed on a surface of the showerhead, wherein the holes penetrate through the mask layer. A deposition apparatus using the gas dispenser is also disclosed.

Abstract: The embodiments of the disclosure provide a method for providing a visual content, a host, and a computer readable storage medium. The method includes: providing a reference object at a first location to aim at a first point and accordingly determining a first reference line related to the first point, wherein the first point is associated with an external camera; providing the reference object at a second location to aim at the first point and accordingly determining a second reference line related to the first point; determining a camera position of the external camera based on the first reference line and the second reference line; obtaining a specific image captured by the external camera; and generating a specific visual content via combining the specific image with a virtual scene based on the camera position.

Abstract: A lateral-bipolar junction transistor (BJT) including a semiconductor substrate, an insulator region disposed on the semiconductor substrate, and a well region comprising a well semiconductor of a first conductivity type disposed over the insulator region. An emitter region of a second conductivity type is disposed in the well region, and at least one collector region of a second conductivity type is disposed in the well region. A T shaped, Pi shaped or H shaped gate and gate oxide layer includes a gate portion extending between the emitter region and one or more collector regions, and a base is disposed underneath the gate portion. In other embodiments, a metal oxide semiconductor (MOS) transistor-based circuit similarly employs a compact Pi or H shaped gate and gate oxide layer.

Abstract: The present disclosure relates to a ULBP6 binding protein that inhibits the interaction between ULBP6 and NKG2D, and methods of treating cancer with said ULBP6 binding protein.

Abstract: Described herein are methods of making (Z)-endoxifen, a salt thereof, crystalline forms of endoxifen, and compositions comprising them. Also described herein are crystalline forms of (Z)-endoxifen. A method of making (Z)-endoxifen may include one or more enrichment steps to enrich the amount of (Z)-endoxifen present in a composition. Enrichment may include one or more steps of crystallization, recrystallization, or fractional recrystallization to reduce the level of one or more impurities in the composition. These methods may be industrially scalable. Also described herein are compositions enriched for (Z)-endoxifen produced by the methods described herein.

Abstract: A superlattice composite structure includes a first superlattice stack layer and a second superlattice stack layer. The first superlattice stack layer includes a plurality of first units stacked along a vertical direction. Each of the first units includes an aluminium nitride (AlN) layer, an aluminium gallium nitride (AlGaN) layer and a gallium nitride (GaN) layer stacked in sequence along the vertical direction. The second superlattice stack layer is stacked with the first superlattice stack layer along the vertical direction. The second superlattice stack layer includes a plurality of second units stacked along the vertical direction. Each of the second units includes another AlN layer, another AlGaN layer and another GaN layer stacked in sequence along the vertical direction.

Abstract: Disclosed is a dehumidifier with compensation and controlling method thereof. The dehumidifier with compensation includes an environment-adjusting unit, a temperature-detecting unit, a humidity-detecting unit, a temperature-compensation unit and a control unit. The temperature-compensation unit is used to derive a plurality of compensated temperature values of the indoor space by calculating or checking a temperature reference table. The control unit is used to adjust a power of the environment-adjusting unit according to the plurality of compensated temperature values to achieve the target-moisture value.

Abstract: A tracking system is provided. A head-mounted display device is adapted to be mounted on a head of a user and comprises a camera and a processor. The camera obtains a body image includes a body portion of the user. The processor is configured to: determine a relative position between a body motion sensor of a body tracker and the body portion of the user based on the body image; and perform a target tracking of the body portion based on the relative position and sensor data of the body motion sensor of the body tracker. A body tracker is adapted to be mounted on the body portion of the user and comprises a body motion sensor. The body motion sensor obtains the sensor data. The sensor data indicates a movement and/or a rotation of the body portion.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a device. The device applies Nso sensing beam vectors to Nso received signals at Nant antennas to obtain Nso measurements, respectively, Nso and Nant each being an integer greater than or equal to 1. The device determines a beam vector based on the Nso measurements and the Nso sensing beam vectors.

Abstract: Versions of an application program are evaluated to protect a customer from a supply chain attack. The versions of the application program are executed in to identify behaviors exhibited by the versions of the application program, each of the behaviors including activities that perform computer operations. A behavior change is detected by identifying a behavior that is not common to the versions of the application program.

Abstract: A liquid color masterbatch composition for fabricating a colored fiber includes 5 parts by weight to 45 parts by weight of a colorant, 40 parts by weight to 94 parts by weight of a carrier, and 1 part by weight to 15 parts by weight of a lubricant, in which a chemical structure of the lubricant includes a carbonyl group and an amine group.

Abstract: A novel rheology modifier which comprises a quaternary ammonium containing polyamide for use in aqueous paint, and that can provide excellent pigment suspension and rheological properties to the aqueous based coating without being affected by pH fluctuation.

Abstract: An electronic package structure and a method for manufacturing the same are provided. The electronic package structure includes a first electronic component, a second electronic component, an interconnection element, an insulation layer, and an encapsulant. The second electronic component is disposed adjacent to the first electronic component. The interconnection element is disposed between the first electronic component and the second electronic component. The insulation layer is disposed between the first electronic component and the second electronic component and has a side surface and a top surface connecting to the side surface. The encapsulant surrounds the interconnection element and at least partially covers the top surface of the insulation layer and has an extended portion in contact with the side surface of the insulation layer.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A method according one embodiment of the present disclosure include forming a stack over a substrate, forming a fin-shape structure from patterning the stack and the substrate, recessing the fin-shape structure to form a source/drain trench, depositing a dielectric film in the source/drain trench with a top surface below a top surface of the substrate in the fin-shape structure, and forming an epitaxial feature over the dielectric film. A bottom surface of the epitaxial feature is below the top surface of the substrate in the fin-shape structure.

Abstract: An electronic device includes a circuit board, a package on package structure, a heat-conducting cover, and a heat-conducting fluid. The circuit board has a first surface and a second surface opposite to each other. The package on package structure is disposed on the first surface. The package on package structure has at least one heat generating element. The heat-conducting cover is disposed on the second surface and is in thermal contact with the circuit board. The heat-conducting cover and the second surface form an enclosed space. The heat-conducting fluid is filled in the enclosed space.

Abstract: A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

Abstract: Techniques are presented herein to facilitate the monitoring of occupancy of a buffer in a network device. Packets are received at a network device. Information is captured describing occupancy of the buffer caused by packet flow through the buffer in the network device. Analytics packets are generated containing the information. The analytics packets from the network device for retrieval of the information contained therein for analysis, replay of buffer occupancy, etc.