Abstract: Wireless receiver systems and methods for user equipment are described that employ multiple receiver heads. The multiple heads can receive wireless communication signals over different receive paths from different transmission sources. The systems can scan and monitor signal quality from all receiver heads during a scheduled gap in a communication link without interfering with an ongoing communication session.

Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: A semiconductor device structure and a manufacturing method thereof are provided. The semiconductor device structure includes a semiconductor substrate, semiconductor channel sheets disposed over the semiconductor substrate, and source and drain regions located beside the semiconductor channel sheets. A gate structure is disposed between the source and drain regions and disposed over the semiconductor channel sheets. The gate structure laterally surrounds the semiconductor channel sheets. The gate structure includes a top gate electrode structure disposed above the semiconductor channel sheets, and lower gate electrode structures disposed between the semiconductor channel sheets. Sidewall spacers are disposed between the gate structure and source and drain regions, and the sidewall spacers located next to the top gate electrode structure have slant sidewalls.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: A semiconductor device includes a first die having a first bonding layer; a second die having a second bonding layer disposed over and bonded to the first bonding layer; a plurality of bonding members, wherein each of the plurality of bonding members extends within the first bonding layer and the second bonding layer, wherein the plurality of bonding members includes a connecting member electrically connected to a first conductive pattern in the first die and a second conductive pattern in the second die, and a dummy member electrically isolated from the first conductive pattern and the second conductive pattern; and an inductor disposed within the first bonding layer and the second bonding layer. A method of manufacturing a semiconductor device includes bonding a first inductive coil of a first die to a second inductive coil of a second die to form an inductor.

Abstract: A light emitting display unit includes a redistribution layer (RDL) and multiple light emitting elements. The RDL includes multiple electrode patterns, multiple pad patterns, an insulating layer and multiple conductive through holes. A first gap and a second gap are respectively formed between two adjacent electrode patterns and between corresponding two adjacent pad patterns. A third length of the overlapping area of an orthographic projection of the first gap on the pad patterns and the pad patterns in a first direction is less than or equal to a second length of the second gap in the first direction. The micro light emitting elements are disposed on the RDL and electrically connected with the electrode patterns.

Abstract: Disclosed are systems, methods, and non-transitory computer-readable storage media for monitoring application health via correctable errors. The method includes identifying, by a network device, a network packet associated with an application and detecting an error associated with the network packet. In response to detecting the error, the network device increments a counter associated with the application, determines an application score based at least in part on the counter, and telemeters the application score to a controller. The controller can generate a graphical interface based at least in part on the application score and a timestamp associated with the application score, wherein the graphical interface depicts a trend in correctable errors experienced by the application over a network.

Abstract: A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first alignment pattern having a plurality of first scale patterns arranged in a first direction. The second semiconductor device is mounted over the first semiconductor device and includes a second alignment pattern having a plurality of second scale patterns arranged in a second direction parallel to the first direction, and a scale pitch of the first scale patterns is different from a scale pitch of the second scale patterns.

Abstract: A communication apparatus comprises a radio transceiver and a modem processor. The radio transceiver is configured to transmit or receive signals. The modem processor is coupled to the radio transceiver and configured to perform operations comprising: performing a beam management, to train a first receiver (Rx) beam; receiving a physical downlink shared channel (PDSCH) according to the first Rx beam; selecting at least one second Rx beam according to a scenario, if a first performance indicator of the first Rx beam is lower than a previous first performance indicator of the first Rx beam by a first threshold; determining at least one second performance indicator of the PDSCH according to a round-robin test; selecting a third Rx beam from the at least one second Rx beam according to the at least one second performance indicator; and receiving the PDSCH according to the third Rx beam.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a first semiconductor layer, an active region, a p-type or n-type layer, and a first metal element-containing structure. The first semiconductor layer has a surface including a first portion and a second portion. The active region is located on the first portion and includes AlGaInAs, InGaAsP, AlGaAsP or AlGaInP. The p-type or n-type layer includes an oxygen element (O) and a metal element, and is located on the second portion. The first metal element-containing structure is located on the p-type or n-type layer. The p-type or n-type layer physically contacts the first metal element-containing structure and the first semiconductor layer.

Abstract: A method for enhancing sports performance and alleviating sarcopenia with a Streptococcus thermophiles ST7 fermentation product composition is disclosed. The administration of an effective amount of the Streptococcus thermophiles ST7 fermentation product composition to an individual in advance can increase the ATP content of the individual's muscle cells and lower indices related to fatigue and muscle damage, thereby enhancing the individual's sports performance and improving or preventing sarcopenia and its symptoms.

Abstract: The present technology is directed to a system and method for application aware management and recovery of link failures resulting from excessive errors observed on the link. One aspect of the proposed technology is based on identification of link errors associated with application-specific data patterns traversing link. Other aspects involve corrective actions based on relocation or modification of specific application traffic to thereby alleviate the observed excessive link errors and prevent a link failure or shut down. Relocation may involve moving the source application to a different virtual machine/container/physical device or rerouting application traffic by updating relevant routing protocols. Modification may involve harmlessly changing payload data pattern to remove data-pattern dependent signal attenuation.

Abstract: The present disclosure provides binding proteins, such as antibodies and antigen-binding fragments, which specifically bind to human CD200R1 receptor protein (hu-CD200R1) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects mediated by hu-CD200R1. The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat diseases and conditions responsive to decreasing, inhibiting and/or blocking immune regulatory function or activity mediated by CD200 binding to CD200R1.

Abstract: A high electron mobility transistor (HEMT) device and a method of forming the HEMT device are provided. The HEMT device includes a substrate, a channel layer, a barrier layer, and a gate structure. The substrate has at least one active region. The channel layer is disposed on the at least one active region. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The gate structure includes a metal layer and a P-type group III-V semiconductor layer vertically disposed between the metal layer and the barrier layer. The P-type group III-V semiconductor layer includes a lower portion and an upper portion on the lower portion, and the upper portion has a top area greater than a top area of the lower portion.

Abstract: Wireless receiver systems and methods for user equipment are described that employ multiple receiver heads. The multiple heads can receive wireless communication signals over different receive paths from different transmission sources. The systems can scan and monitor signal quality from all receiver heads during a scheduled gap in a communication link without interfering with an ongoing communication session.

Abstract: Techniques are presented herein to facilitate latency measurements in a networking environment. A first network device receives a packet for transport within a network domain that comprises a plurality of network devices. The plurality of network devices have a common time reference, that is, they are time synchronized. The first network device generates timestamp information indicating time of arrival of the packet at the first network device. The first network device inserts into the packet a tag that comprises at least a first subfield and a second subfield. The first subfield comprising a type indicator to signify to other network devices in the network domain that the tag includes timestamp information, and the second subfield includes the timestamp information. The first network device sends the packet from to into the network domain to another network device. Other network devices which receive that packet can make latency measurements.