Patents by Inventor Wei Jen

Wei Jen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11862622
    Abstract: An integrated circuit layout includes a first standard cell and a second standard cell. The first standard cell includes first gate lines arranged along a first direction and extending along a second direction. The second standard cell abuts to one side of the first standard cell along the second direction and includes second gate lines arranged along the first direction and extending along the second direction. A first gate line width of the first gate lines and a second gate line width of the second gate lines are different. A first cell width of the first standard cell and a second cell width of the second standard cell are integral multiples of a default gate line pitch of the first gate lines and the second gate lines. At least some of the second gate lines and at least some of the first gate lines are aligned along the second direction.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: January 2, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kun-Yuan Wu, Wei-Jen Wang, Chien-Fu Chen, Chen-Hsien Hsu, Chien-Hung Chen, Chun-Hsien Lin
  • Patent number: 11855207
    Abstract: The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Jen Lai, Yen-Ming Chen, Tsung-Lin Lee
  • Publication number: 20230412246
    Abstract: Apparatus and methods are provided for robust front end selection control. In one novel aspect, multi-stage head selection is provided. In one embodiment, the UE monitors one or more head-selection triggers, performs a UE Rx wide beam measurement to select at least one deactivated head as at least one standby head based on one or more coarse-beam selection criteria upon detecting at least one head-selection trigger, performs a UE Rx fine beam selection on the active head and the selected standby head, and switches the standby head as the active head based on a result of the fine Rx beam selection and head selection criteria. One or more operations are used for the multi-stage head selection, including multi-head operation, multi-CC measurement, and joint RRM and head selection operation.
    Type: Application
    Filed: August 22, 2022
    Publication date: December 21, 2023
    Inventors: Fei Xu, Wenze Qu, Yabo Li, Yaochao Liu, Wei-Jen Chen
  • Publication number: 20230408128
    Abstract: The present invention discloses a refrigeration dehumidifier with compensation and controlling method thereof. The refrigeration dehumidifier with compensation comprises an environment-adjusting unit, a temperature-detecting unit, a humidity-detecting unit, a temperature-adjusting unit and a control unit. The temperature-adjusting unit is used to derive a plurality of adjusted temperature values by calculating or searching from a temperature table, then the real moisture values corresponding to the indoor space. The control unit is used to adjust the environment-adjusting unit based on the plurality of moisture values, in order to shorten the time achieving a target-moisture value.
    Type: Application
    Filed: July 13, 2022
    Publication date: December 21, 2023
    Inventors: Wei-Jen CHEN, Tun-Ping TENG
  • Patent number: 11841771
    Abstract: A data auto-backup system includes a main server and a terminal device. The main server includes a registered account, and the terminal device includes an application connected to the main server. When the application of the terminal device detects a registered portable storage device connected to the connection port, the application reads a local file stored in the registered portable storage device, and uploads the local file to the registered account in the main server as a cloud backup file. As a result, the terminal device automatically backs up the local file of the registered portable storage device to the main server whenever the registered portable storage device is connected, saving the user from manual backup steps, and preventing valuable data from missing. Furthermore, a software solution to encrypt data in the portable devices is employed without introducing any hardware to the existing portable devices.
    Type: Grant
    Filed: March 24, 2023
    Date of Patent: December 12, 2023
    Assignee: AMARYLLO INC.
    Inventors: Chao-Tung Yang, Wei-Jen Lee
  • Publication number: 20230379844
    Abstract: A power-adjusting method for uplink transmission is provided. The power-adjusting method is applied to user equipment (UE). In response to the UE transmitting a first packet carrying a specific message to a network node, the power-adjusting method includes the UE increasing the transmission power to transmit the first packet.
    Type: Application
    Filed: May 23, 2022
    Publication date: November 23, 2023
    Inventors: Chih-Chieh LAI, Yi-Hsuan LIN, Ming-Yuan CHENG, Wei-Yu LAI, Wei-Jen CHEN
  • Publication number: 20230369132
    Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.
    Type: Application
    Filed: July 25, 2023
    Publication date: November 16, 2023
    Inventors: Da-Yuan LEE, Hung-Chin CHUNG, Hsien-Ming LEE, Kuan-Ting LIU, Syun-Ming JANG, Weng CHANG, Wei-Jen LO
  • Publication number: 20230361207
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.
    Type: Application
    Filed: July 18, 2023
    Publication date: November 9, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen
  • Publication number: 20230361206
    Abstract: A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer.
    Type: Application
    Filed: July 13, 2023
    Publication date: November 9, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chi-Hsiao Chen, Kai-Lin Lee, Wei-Jen Chen
  • Publication number: 20230348604
    Abstract: The present disclosure relates to a ULBP6 binding protein that inhibits the interaction between ULBP6 and NKG2D, and methods of treating cancer with said ULBP6 binding protein.
    Type: Application
    Filed: April 28, 2023
    Publication date: November 2, 2023
    Applicants: 23andMe, Inc., GLAXOSMITHKLINE INTELLECTUAL PROPERTY (No.3) LIMITED
    Inventors: Joel BENJAMIN, Shashank BHARILL, I-Ling CHEN, Yu CHEN, Wei-Jen CHUNG, Zahra Bahrami DIZICHEH, Germaine FUH, Patrick KOENIG, Yujie LIU, Mauro POGGIO, Shruti YADAV, Ping-Chiao TSAI, Claus SPITZFADEN
  • Publication number: 20230351632
    Abstract: The embodiments of the disclosure provide a method for providing a visual content, a host, and a computer readable storage medium. The method includes: providing a reference object at a first location to aim at a first point and accordingly determining a first reference line related to the first point, wherein the first point is associated with an external camera; providing the reference object at a second location to aim at the first point and accordingly determining a second reference line related to the first point; determining a camera position of the external camera based on the first reference line and the second reference line; obtaining a specific image captured by the external camera; and generating a specific visual content via combining the specific image with a virtual scene based on the camera position.
    Type: Application
    Filed: July 21, 2022
    Publication date: November 2, 2023
    Applicant: HTC Corporation
    Inventor: Wei-Jen Chung
  • Patent number: 11804409
    Abstract: The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.
    Type: Grant
    Filed: July 26, 2021
    Date of Patent: October 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Da-Yuan Lee, Hung-Chin Chung, Hsien-Ming Lee, Kuan-Ting Liu, Syun-Ming Jang, Weng Chang, Wei-Jen Lo
  • Patent number: 11787861
    Abstract: The present disclosure provides binding proteins, such as antibodies and antigen-binding fragments, which specifically bind to human CD200R1 receptor protein (hu-CD200R1) and are capable of decreasing, inhibiting, and/or fully-blocking immune regulatory effects mediated by hu-CD200R1. The present disclosure also provides methods of using the antibodies (and compositions thereof) to treat diseases and conditions responsive to decreasing, inhibiting and/or blocking immune regulatory function or activity mediated by CD200 binding to CD200R1.
    Type: Grant
    Filed: May 28, 2021
    Date of Patent: October 17, 2023
    Assignee: 23andMe, Inc.
    Inventors: Yu Chen, Jilean Beth Fenaux, Germaine Fuh-Kelly, Yao-Ming Huang, Wei-Jen Chung, Erik Edward Karrer, Cecilia Lay, Steven J. Pitts, Louise Scharf
  • Patent number: 11791402
    Abstract: A method according to the present disclosure includes depositing, over a substrate, a stack including channel layers interleaved by sacrificial layers, forming a first fin structure and a second fin in a first area and a second area of the substrate, depositing a first dummy gate stack over the first fin structure and a second dummy gate stack over the second fin structure, recessing source/drain regions of the first fin structure and second fin structure to form first source/drain trenches and second source/drain trenches, selectively and partially etching the sacrificial layers to form first inner spacer recesses and second inner spacer recesses, forming first inner spacer features in the first inner spacer recesses, and forming second inner spacer features in the second inner spacer recesses. A composition of the first inner spacer features is different from a composition of the second inner spacer features.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: October 17, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Jen Lai, Wei-Yuan Lu, Chia-Pin Lin
  • Publication number: 20230326980
    Abstract: A high electron mobility transistor (HEMT) device including the following components is provided. A gate electrode is located on a barrier layer. A source electrode is located on the first side of the gate electrode. A drain electrode is located on the second side of the gate. A source field plate is connected to the source electrode. The source field plate includes first, second, and third field plate portions. The first field plate portion is connected to the source electrode and is located on the first side of the gate electrode. The second field plate portion is located on the second side of the gate electrode. The third field plate portion is connected to the end of the first field plate portion and the end of the second field plate portion. The source field plate has a first opening located directly above the gate electrode.
    Type: Application
    Filed: May 5, 2022
    Publication date: October 12, 2023
    Applicant: United Microelectronics Corp.
    Inventors: Chi-Hsiao Chen, Tzyy-Ming Cheng, Wei Jen Chen, Kai Lin Lee
  • Publication number: 20230327212
    Abstract: A lithium battery includes a positive electrode, wherein the positive electrode includes a positive electrode sheet and a protective layer. The positive electrode sheet includes an active substance, a conductive additive, a binder, a current collector, or a combination thereof. The protective layer is disposed on the positive electrode sheet. A material of the protective layer is titanium nitride. A manufacturing method of a lithium battery is also provided.
    Type: Application
    Filed: May 24, 2022
    Publication date: October 12, 2023
    Applicant: Chung Yuan Christian University
    Inventors: Wei-Jen Liu, Tzu-Hsin Tseng
  • Publication number: 20230293601
    Abstract: The invention discloses a use of Bacillus coagulans BC198 or its metabolites for prevention or adjuvant treatment of intestinal lesion-related pathological changes or flora imbalance caused by chemotherapy, that is, by administering an effective amount of Bacillus coagulans BC198 to an individual receiving chemotherapy is capable of effectively improving disorders of weight loss, loss of appetite, diarrhea, shortening of length of large intestine, inflammation, intestinal tissues lesion and imbalance of intestinal flora caused by chemotherapeutic drugs, in other words, the Bacillus coagulans BC198 disclosed in the invention can be used as an adjuvant product, a dietetic food product for chemotherapy, or other compositions for improving side effects or enhancing therapeutic effects.
    Type: Application
    Filed: May 4, 2022
    Publication date: September 21, 2023
    Inventors: Wei-Jen CHEN, Tsung-Yin TANG, Shiuan-Huei WU, Ai-Lun TSENG, Siou-Ru SHEN
  • Patent number: 11761829
    Abstract: A sensor placement optimization device is provided, which may include a preprocessing circuit and an operational circuit. The preprocessing circuit may perform a pre-process for the sensing signals of a plurality of temperature sensors, installed on a machine tool, to generate a pre-processed data. The operational circuit may execute a normalization for the pre-processed data to generate a normalized data, perform a principal component analysis for the normalized data to generate a dimensionality-reduced data and implement a principal component regression for the dimensionality-reduced data to obtain the contributions of the temperature sensors. Then, the operational circuit may rank the temperature sensors according to the contributions thereof to generate a ranking result and execute a screening process according to the ranking result to select at least one redundant sensor from the temperature sensors; afterward, the operational circuit may remove the redundant sensor from the temperature sensors.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: September 19, 2023
    Assignee: NATIONAL CHUNG CHENG UNIVERSITY
    Inventors: Chih-Chun Cheng, Wen-Nan Cheng, Ping-Chun Tsai, Shao-Rong Su, Yao-Huan Lei, Wei-Jen Chen
  • Patent number: 11747923
    Abstract: A flexible wireless charging mouse pad includes an anti-slip cushion layer, a double-sided adhesive layer, and a coil. The anti-slip cushion layer has a topside with a single-ring groove, and the single-ring groove has an inner bottom groove wall. The double-sided adhesive layer is adhered to the topside. The coil has multiple surrounding rings arranged side by side with one another to form a coil module, and the coil module of the coil inside the single-ring groove is stacked and connected between the double-sided adhesive layer and the inner bottom groove wall and adhered by the double-sided adhesive layer, so as to achieve a wireless charging effect by the mouse pad in the condition of having only one single-ring groove on the flexible board layer, further to achieve the effects of reducing manufacturing difficulty, lowering manufacturing cost, and improving market competitiveness.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: September 5, 2023
    Assignee: YUHONG ELECTRONIC (SHENZHEN) CO., LTD.
    Inventor: Wei-Jen Liang
  • Patent number: 11746285
    Abstract: An intrinsic fluorescent green fiber includes 98.00 to 99.00 parts by weight of a carrier, 0.10 to 0.20 parts by weight of a yellow colorant, 0.08 to 0.20 parts by weight of a blue colorant, and 1.00 to 1.50 parts by weight of a titanium dioxide. When a content of 0.10 wt % to 0.20 wt % of the yellow colorant and a balance of the carrier are mixed to form a yellow fiber, the L*, a*, and b* values of the yellow fiber are respectively between 101.27 and 101.72, between ?17.61 and ?13.47, and between 89.84 and 108.79. When a content of 0.08 wt % to 0.20 wt % of the blue colorant and a balance of the carrier are mixed to form a blue fiber, the L*, a*, and b* values of the blue fiber are respectively between 55.60 and 66.80, between ?22.69 and ?22.70, and between ?37.50 and ?31.80.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: September 5, 2023
    Assignee: TAIWAN TEXTILE RESEARCH INSTITUTE
    Inventors: Rih-Sheng Chiang, Wei-Jen Lai, Yi-Ching Sung, Sheng-Shan Chang, Chao-Huei Liu