Abstract: A memory device includes a spin-orbit-transfer (SOT) bottom electrode, an SOT ferromagnetic free layer, a first tunnel barrier layer, a spin-transfer-torque (STT) ferromagnetic free layer, a second tunnel barrier layer and a reference layer. The SOT ferromagnetic free layer is over the SOT bottom electrode. The SOT ferromagnetic free layer has a magnetic orientation switchable by the SOT bottom electrode using a spin Hall effect or Rashba effect. The first tunnel barrier layer is over the SOT ferromagnetic free layer. The STT ferromagnetic free layer is over the first tunnel barrier layer and has a magnetic orientation switchable using an STT effect. The second tunnel barrier layer is over the STT ferromagnetic free layer. The second tunnel barrier layer has a thickness different from a thickness of the first tunnel barrier layer. The reference layer is over the second tunnel barrier layer and has a fixed magnetic orientation.

Abstract: A rigid wireless charging mouse pad includes a rigid board layer, a double-sided adhesive plate and a coil. The underside of the rigid board layer has a single-ring groove with an inner top groove wall. The double-sided adhesive plate is adhered to the inner top groove wall. The coil has surrounding rings arranged side by side with one another to form a coil module which is stacked on the double-sided adhesive plate in the single-ring groove and adhered by the double-sided adhesive plate to achieve a wireless charging effect by the mouse pad in the condition of having only one single-ring groove on the rigid board layer, so as to achieve the effects of reducing manufacturing difficulty, lowering manufacturing cost, and improving market competitiveness.

Abstract: A flexible wireless charging mouse pad includes an anti-slip cushion layer, a double-sided adhesive layer, and a coil. The anti-slip cushion layer has a topside with a single-ring groove, and the single-ring groove has an inner bottom groove wall. The double-sided adhesive layer is adhered to the topside. The coil has multiple surrounding rings arranged side by side with one another to form a coil module, and the coil module of the coil inside the single-ring groove is stacked and connected between the double-sided adhesive layer and the inner bottom groove wall and adhered by the double-sided adhesive layer, so as to achieve a wireless charging effect by the mouse pad in the condition of having only one single-ring groove on the flexible board layer, further to achieve the effects of reducing manufacturing difficulty, lowering manufacturing cost, and improving market competitiveness.

Abstract: A wiring machine includes a chassis, a shifting mechanism, a carrying mechanism and a wire leading mechanism. The chassis has a guide rail. The shifting mechanism is disposed on the guide rail and movable along the guide rail. The carrying mechanism is disposed under the guide rail and includes a tray movable along a direction perpendicular to the guide rail. The wire leading mechanism is connected to the shifting mechanism and movable in a direction perpendicular to the shifting mechanism. The wire leading mechanism includes a body, a wire conveying assembly disposed in the body and a wire leading head connected to the body. A wire is conveyed by the wire conveying assembly to be output by the wire leading head. Therefore, the wire may be rapidly and stably laid into different types and shapes depending on different requirements.

Abstract: A medicament delivery tooth covering is provided. The medicament delivery tooth covering includes a tooth covering and a carrier layer. The tooth covering has at least one attachment surface that covers a surface of teeth of a user. The carrier layer is arranged on the at least one attachment surface. The carrier layer carries a medicament, and the medicament contains powder particles. When water is introduced to an inner side of the at least one attachment surface of the tooth covering, the water is allowed to pass through the carrier layer, so that the medicament contacts the water. The powder particles are dual-structured powder particles that have a core structure and an outer layer structure that encloses an outer side of the core structure.

Abstract: A calcium phosphate-based core-shell structured material, a method for preparing the same, and an oral care composition using the same are provided. The calcium phosphate-based core-shell structured material includes an amorphous calcium phosphate (ACP) core and a ?-tricalcium phosphate (?-TCP) shell covering the core. The method includes a first sintering step and a second sintering step. The first sintering step is to sinter an ACP material at between 700° C. and 800° C. to obtain an ?-TCP shell. The second sintering step allows the ?-TCP shell to form into the ?-TCP shell by sintering at between 800° C. and 900° C. The oral care composition includes a calcium phosphate mixture and an orally receivable carrier. The calcium phosphate mixture includes a powder of the calcium phosphate-based core-shell structured material and a tricalcium phosphate powder mixed in a weight ratio from 3:5 to 3:7.

Abstract: The present invention provides a novel Lactobacillus fermentum strain, named Lactobacillus fermentum strain V3, and its use in manufacturing a pharmaceutical composition or a food composition for regulating intestinal microflora and treating and/or preventing an inflammatory diseases and/or a cancer.

Abstract: A head mounted display device includes a display, a light waveguide element, and a light shutter. The display periodically provides a display image. The light waveguide element receives the display image, generates a projection image according to the display image, projects the projection image from a second surface, and projects the projection image to a target zone from a first surface. The light shutter is adjacent to the second surface of the light waveguide element and is coupled to the light waveguide element. The light shutter is periodically disabled and enabled in an alternating manner.

Abstract: A semiconductor structure includes at least one stacked fin structure, a gate and a source/drain. At least one stacked fin structure is located on a substrate, wherein the stacked fin structure includes a first fin layer and a second fin layer, and a fin dielectric layer is sandwiched by the first fin layer and the second fin layer. The gate is disposed over the stacked fin structure. The source/drain is disposed directly on the substrate and directly on sidewalls of the whole stacked fin structure. The present invention provides a semiconductor process formed said semiconductor structure.

Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Abstract: The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.

Abstract: The present invention relates to the use of a novel Lactobacillus brevis ProGA28 strain, deposited in the German Collection for Microorganisms and Cell Cultures (DSMZ) under the accession number DSM 33167 on May 28, 2019. The metabolites of Lactobacillus brevis ProGA28 have the ability to improve sleep quality, can effectively reduce the time of rapid eye movement in the sleep phase, can reduce time to fall asleep, can increase total sleep time, and can increase the ratio of low waves during sleep so that sleep disorders and related complications, such as anxiety and immune system diseases, are treated.

Abstract: In an embodiment, a device includes: a nanostructure; and a source/drain region adjoining a channel region of the nanostructure, the source/drain region including: a first epitaxial layer on a sidewall of the nanostructure, the first epitaxial layer including a germanium-free semiconductor material and a p-type dopant; a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including a germanium-containing semiconductor material and the p-type dopant; and a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including the germanium-containing semiconductor material and the p-type dopant.

Abstract: A method according to the present disclosure includes depositing, over a substrate, a stack including channel layers interleaved by sacrificial layers, forming a first fin structure and a second fin in a first area and a second area of the substrate, depositing a first dummy gate stack over the first fin structure and a second dummy gate stack over the second fin structure, recessing source/drain regions of the first fin structure and second fin structure to form first source/drain trenches and second source/drain trenches, selectively and partially etching the sacrificial layers to form first inner spacer recesses and second inner spacer recesses, forming first inner spacer features in the first inner spacer recesses, and forming second inner spacer features in the second inner spacer recesses. A composition of the first inner spacer features is different from a composition of the second inner spacer features.

Abstract: A device may generate, using a random telegraph signal (RTS) noise generator, a simulated RTS noise as input to a transistor included in an electronic circuit. The device may determine, based on the simulated RTS noise input to the transistor, a simulated output signal from the transistor.

Abstract: A semiconductor structure and a method of forming the same are provided. A semiconductor structure according to the present disclosure includes a first channel member and a second channel member disposed over the first channel member, a first channel extension feature coupled to the first channel member, a second channel extension feature coupled to the second channel member, and an inner spacer feature disposed between the first channel extension feature and the second channel extension feature.

Abstract: A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer.

Abstract: A liquid color masterbatch composition for fabricating a colored fiber includes 30.0 to 44.4 parts by weight of a colorant, 14.0 to 44.4 parts by weight of a lubricant, and 11.2 to 56.0 parts by weight of a carrier, in which a viscosity of the liquid color masterbatch composition between 13000 cP and 18000 cP.

Abstract: A semiconductor structure and a method of forming the same are provided. A semiconductor structure according to the present disclosure includes a first channel member and a second channel member disposed over the first channel member, a first channel extension feature coupled to the first channel member, a second channel extension feature coupled to the second channel member, and an inner spacer feature disposed between the first channel extension feature and the second channel extension feature.

Abstract: An integrated circuit layout includes a first standard cell and a second standard cell. The first standard cell includes first gate lines arranged along a first direction and extending along a second direction. The second standard cell abuts to one side of the first standard cell along the second direction and includes second gate lines arranged along the first direction and extending along the second direction. A first gate line width of the first gate lines and a second gate line width of the second gate lines are different. A first cell width of the first standard cell and a second cell width of the second standard cell are integral multiples of a default gate line pitch of the first gate lines and the second gate lines. At least some of the second gate lines and at least some of the first gate lines are aligned along the second direction.