Abstract: An imaging lens assembly includes a plurality of lens elements, wherein at least one of the lens elements is a dual molded lens element. The dual molded lens element includes a light transmitting portion and a light absorbing portion. The light transmitting portion includes an effective optical section and a first annular surface. The light absorbing portion is located on at least one surface of an object-side surface and an image-side surface of the dual molded lens element, wherein a plastic material and a color of the light absorbing portion are different from a plastic material and a color of the light transmitting portion, and the light absorbing portion includes an opening and a second annular surface. A step surface of the second annular surface is formed by the first annular surface and the second annular surface.

Abstract: A method of modifying an integrated circuit includes operations related to identifying at least two fin-containing functional areas of the integrated circuit, generating a performance curve for each fin-containing functional area of the integrated circuit for each fin height of a series of fin heights, and determining whether an inflection point exists for each performance curve. The method further includes operations related to selecting a value of a performance characteristic for each of the fin-containing functional areas, the selected value having a corresponding fin height in each of the fin-containing functional areas, modifying each fin-containing functional area to have the fin height corresponding to the selected value of the performance characteristic; and combining the modified fin-containing functional areas to form a modified integrated circuit.

Abstract: A display device having a display region and a peripheral region surrounding the display region is provided. The display device includes a first adhesion layer sandwiched between a display unit and a protective structure. The protective structure includes a first protective layer having a first length in a first direction. The protective structure also includes a second adhesion layer disposed on the first protective layer. The protective structure further includes a second protective layer disposed on the second adhesion layer, and the second protective layer has a second length in the first direction, wherein the difference between the first length and the second length is between 0 and 1 mm, and wherein the second protective layer is on the outermost side of the display device.

Abstract: A defect displaying method is provided in the disclosure. The method comprises acquiring defect group information from an image of a wafer, wherein the defect group information includes a set of correlations between a plurality of defects identified from the image and one or more corresponding assigned defect types and displaying at least some of the plurality of defects according to their corresponding assigned defect types.

Abstract: A server for knowledge recommendation for defect review. The server includes a processor electronically coupled to an electronic storage device storing a plurality of knowledge files related to wafer defects. The processor is configured to execute a set of instruction to cause the server to: receive a request for knowledge recommendation for inspecting an inspection image from a defect classification server; search for a knowledge file in the electronic storage device that matches the inspection image; and transmit the search result to the defect classification server.

Abstract: Various embodiments are directed to electrostatic discharge (ESD) protection apparatus comprising a bipolar junction transistor (BJT) having terminals, a field-effect transistor (FET) having terminals, and a common base region connected to a recombination region. The BJT and the FET are integrated with one another and include a common region that is shared by the BJT and the FET. The BJT and FET collectively bias the common base region and prevent triggering of the BJT by causing a potential of the common base region to follow a potential of one of the terminals of the BJT in response to an excessive but tolerable non-ESD voltage change at one or more of the terminals.

Abstract: An electrostatic discharge protection device is provided. A voltage selection circuit selects a voltage having a higher voltage value among a reference voltage and a voltage on a conductive path and supply the selected voltage to a RC latch self-feedback circuit, so that the RC latch self-feedback circuit ties a voltage of an input end of a RC control circuit when the electrostatic discharge does not occur, and disconnect a switch that conducts an electrostatic current.

Abstract: An ESD circuit is connected to a power pad and a first node. The ESD circuit includes a RC circuit and a first ESD current path. The RC circuit is connected between the power pad and the first node. The RC circuit is capable of providing a first control voltage and a second control voltage. The first ESD current path is connected between the power pad and the first node. When the power pad receives a positive ESD zap, the first ESD current path is turned on in response to the first control voltage and the second control voltages provided by the RC circuit, so that an ESD current flows from the power pad to the first node through the first ESD current path.

Abstract: An imaging lens assembly includes a plurality of lens elements, wherein at least one of the lens elements is a dual molded lens element. The dual molded lens element includes a light transmitting portion and a light absorbing portion. The light transmitting portion includes an effective optical section and a first annular surface. The light absorbing portion is located on at least one surface of an object-side surface and an image-side surface of the dual molded lens element, wherein a plastic material and a color of the light absorbing portion are different from a plastic material and a color of the light transmitting portion, and the light absorbing portion includes an opening and a second annular surface. A step surface of the second annular surface is formed by the first annular surface and the second annular surface.

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes three or more bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and a diode connected in series with the three or more bipolar transistors and one of the first and second nodes. Each of the three or more bipolar transistors includes a collector comprising collector components, an emitter comprising emitter components, and a base structure comprising a substrate region or an active region. The emitter components are alternately located with respect to the collector components. The substrate region or the active region surrounds the collector components and the emitter components. Other embodiments are also described.

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes stacked first and second PNP bipolar transistors that are configured to shunt current between a first node and a second node in response to an ESD pulse received between the first and second nodes and an NMOS transistor connected in series with the stacked first and second PNP bipolar transistors and the second node. An emitter and a base of the second PNP bipolar transistor are connected to a collector of the first PNP bipolar transistor. A gate terminal of the NMOS transistor is connected to a source terminal of the NMOS transistor. Other embodiments are also described.

Abstract: An apparatus can include a first circuit that is configured to provide electrostatic discharge (ESD) protection against an ESD pulse applied between a first node and a second node. The first circuit includes a series stack of bipolar transistors that are configured to shunt current between the first and second nodes in response to the ESD pulse; and a diode connected in series with the stack of bipolar transistors and configured to lower a snapback holding voltage of the first circuit when shunting current between the first and second nodes.

Abstract: A pneumatic ratchet wrench includes a main body formed with a receiving chamber, a head unit, a driving unit and an air motor. The head unit defines a gas passage, and includes a ring portion and a frame portion. The ring portion includes an exit in spatial communication with the gas passage and opens toward the frame portion. The driving unit includes a driving head, and a transmission shaft mounted in the head unit. The air motor drives the transmission shaft and includes a cylinder and a rotor. The cylinder includes a venting hole allowing gas produced in the cylinder to pass through the venting hole and the gas passage and to exit from the exit to be blown toward the frame portion.

Abstract: Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device includes a bipolar transistor device connected between a first node and a second node, a series protection device connected in series with the bipolar transistor device, and a diode device connected between the second node and a third node. A drain terminal of an NMOS device to be protected is connectable to the first node. A body of the NMOS device to be protected is connectable to the second node. A source terminal of the NMOS device to be protected is connectable to the third node. The diode device and the bipolar transistor device are configured to form a parasitic silicon controlled rectifier. Other embodiments are also described.

Abstract: An operation method of an electronic system includes the following steps. When a first communication module of the electronic device receives a call signal, a controller of an electronic device detects whether an expansion device is electrically connected to the electronic device. Based on a result of the controller detecting whether the expansion device is electrically connected to the electronic device, it is determined whether the electronic system performs sound amplification with a first speaker of the electronic device or performs playing with a second speaker of the expansion device.

Abstract: A communication device includes a first body, a second body, a first audio module, and a second audio module. The second body is rotatably connected to the first body. The first audio module is disposed on the first body. The second audio module is at least partially disposed on the first body. When the second body rotates relatively to the first body to be in a first state to switch the communication device to be in a first operation mode, at least a portion of the first audio module is turned on, and the second audio module is turned off. When the second body rotates relatively to the first body to be in a second state to switch the communication device to be in a second operation mode, the first audio module is turned off, and the second audio module is turned on.

Abstract: Embodiments of an ESD protection device and a method for operating an ESD protection device are described. In one embodiment, an ESD protection device includes a first bipolar device connected to a first node, a second bipolar device connected to the first bipolar device and to a second node, a metal-oxide-semiconductor (MOS) device connected to the first and second nodes and to the first and second bipolar devices and configured to shunt current in response to an ESD pulse received between the first and second nodes, and a diode device connected to the first node, to a third node, to the first and second bipolar devices, and to the MOS device. Other embodiments are also described.

Abstract: The ranging device includes a clock generator, a light emitter, a light sensor, and a ranging control circuit. The clock generator outputs a reference clock signal. The light emitter generates an emitted light signal modulated by the reference clock signal and emits the emitted light signal to an object. The light sensor receives a reflected light signal reflected from the object to generate a light sensing signal. The ranging control circuit includes a variable delay line. The ranging control circuit receives the reference clock signal and the light sensing signal, and generates a ranging signal accordingly to track an energy characteristic point of the light sensing signal.

Abstract: An electrostatic discharge (ESD) protection circuit includes an ESD release transistor, at least one stress release transistor, a control circuit, and a voltage division circuit. The ESD release transistor is coupled to a reference voltage terminal of a circuit to be protected. The at least one stress release transistor is coupled between a voltage input terminal of the circuit to be protected and the ESD release transistor. The control circuit turns off the ESD release transistor during a normal operation, and turns on the ESD release transistor during a positive ESD zapping. The voltage division circuit provides at least one divisional voltage for turning on the at least one stress release transistor during the normal operation and the positive ESD zapping.