Abstract: A method, apparatus, and computer-readable medium for improving the reliability of a wireless communication network. The reliability of the wireless communication network is improved by: determining an integrity protection key of a ranging announcement message according to long-term key information sent from a core network, where the integrity protection key is configured to replace a discovery key for integrity protection of the ranging announcement message in a case where the first UE is unable to obtain the discovery key from a mobile communication network.

Abstract: A topical formulation comprising (a) a therapeutically effective amount of tofacitinib; (b) at least one solvent; and (c) optionally one or more other pharmaceutically acceptable excipients is provided. Also provided is a method for treating and/or preventing autoimmune diseases in a subject administering said topical formulation.

Abstract: An electro-optical device includes a waveguide and a first electrode and a second electrode. The first electrode and the second electrode at first and second sides of the waveguide, wherein the first electrode and the second electrode directly contact and extend beyond the first and second sides of the waveguide respectively.

Abstract: A package structure and methods of forming a package structure are provided. The package structure includes a first die, a second die, a wall structure and an encapsulant. The second die is electrically bonded to the first die. The wall structure is located aside the second die and on the first die. The wall structure is in contact with the first die and a hole is defined within the wall structure for accommodating an optical element. The encapsulant laterally encapsulates the second die and the wall structure.

Abstract: A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

Abstract: A semiconductor device includes a MEOL structure and a BEOL structure. The BEOL structure is formed over the MEOL structure and includes a first dielectric layer, a spacer and a conductive portion. The first dielectric layer has a lateral surface and a recess, wherein the recess is recessed with respect to the lateral surface. The spacer is formed the lateral surface and covers an opening of the recess. The conductive portion is formed adjacent to the spacer.

Abstract: A tumor neoantigen prediction method and a tumor neoantigen prediction system are provided. In the method, multiple amino acid sequences in genes of a person to be tested are extracted as multiple test peptides to be compared with multiple human protein sequences in a protein sequence database to find multiple similar peptides that match the human protein sequences. The similar peptides are filtered out from the test peptides and the filtered test peptides are input to multiple trained human leukocyte antigen (HLA) models to obtain multiple ranking results of the test peptides. A weighted sum of rankings of each test peptide in the ranking results is calculated as a score of the test peptide. At least one of the test peptides is selected as a neoantigen adapted for the person to be tested according to the score.

Abstract: Implementations can receive user input during a dialog session between a user and an automated assistant at a client device of the user and via an automated assistant platform, and in response to determining that the user input requires a user interaction with a non-assistant platform: store a state of the dialog session between the user and the automated assistant, transmit a request to initiate the user interaction to the non-assistant platform that causes an additional client device of the user to render a prompt for completing the user interaction, and receive a token associated with the user interaction from the non-assistant platform. In response to receiving the token associated with the user interaction, implementations can cause the dialog session between the user and the automated assistant to be resumed based on the stored state of the dialog session and based on the token associated with the user interaction.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. The gate structure is disposed over the semiconductor substrate. The strained layers are disposed aside the gate structure. The source/drain contact patterns are disposed on and electrically connected to the strained layers. Top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. The gate contact via is disposed on and electrically connected to the gate structure. The source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.

Abstract: A method for manufacturing an interconnect structure includes: forming a first dielectric layer; forming a mask; patterning the first dielectric layer through the mask to form a trench, an inner surface of the trench having two first portions opposite to each other along an X direction, two second portions opposite to each other along a Y direction, and a bottom portion; forming a second dielectric layer over the mask and the patterned first dielectric layer, and along an inner surface of the trench; etching the second dielectric layer by directing an etchant in a predetermined direction such that a first part of the second dielectric layer on the two first portions and the bottom portion is removed, and a second part of the second dielectric layer on the second portions of the trench remains and is formed into two reinforcing spacers; and forming a trench-filling element.

Abstract: A method includes bonding a first package and a second package over a package component, adhering a first Thermal Interface Material (TIM) and a second TIM over the first package and the second package, respectively, dispensing an adhesive feature on the package component, and placing a heat sink over and contacting the adhesive feature. The heat sink includes a portion over the first TIM and the second TIM. The adhesive feature is then cured.

Abstract: The invention relates to inhibitors of mutant isocitrate dehydrogenase (mt-IDH) proteins with neomorphic activity useful in the treatment of cell-proliferation disorders and cancers, having the Formula: where A, U, W1, W2, W3, R1-R6, and R9 are described herein.

Abstract: The present disclosure provides an underwater helicopter with cycloidal rim vector propulsion. The underwater helicopter includes a disc-shaped underwater helicopter hull, a rim driving mechanism, paddles and rotation adjusting mechanisms. The rim driving mechanism is annular, and the diameter size of the rim driving mechanism is matched with the circumference size of the disc-shaped underwater helicopter hull. The rim driving mechanism is fixedly installed in a cavity in the circumference of the disc-shaped underwater helicopter hull. The rotation adjusting mechanisms are uniformly and fixedly installed on the outer side of the rim driving mechanism. The paddle is fixedly connected with the rotation adjusting mechanism.

Abstract: A system may include a gimbal defining a plurality of pockets, where each pocket may include a first portion and a second portion that extends between the first portion and a base of the pocket. The second portion may have a greater diameter than the first portion. The system may include a plurality of conditioning disks, where each conditioning disk is seated within the first portion of a respective pocket. The system may include a plurality of gaskets, where each gasket is seated within the second portion of a respective pocket. The system may include a plurality o-rings, each o-ring disposed between a peripheral edge of one of the plurality of conditioning disks and a lateral wall of one of the plurality of pockets. The system may include a plurality of shoulder screws for coupling the gimbal with one of the plurality of gaskets and a conditioning disk.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a first conductive line, a first conductive via, a second conductive line, and a first barrier layer. The first conductive line is disposed on the substrate. The first conductive via is disposed on the first conductive line. The second conductive line is disposed on the first conductive line. The first barrier layer is disposed between the first conductive via and the second conductive line.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, an encapsulant, a protection layer and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The encapsulant is disposed over the interposer and laterally encapsulating the at least one semiconductor die. The connectors are disposed on the second surface of the interposer and electrically connected with the at least one semiconductor die through the interposer. The protection layer is disposed on the second surface of the interposer and surrounding the connectors. The sidewalls of the interposer include slanted sidewalls connected to the second surface, and the protection layer is in contact with the slant sidewalls of the interposer.

Abstract: The present disclosure discloses a water recycling type greenhouse, including a greenhouse body; a water collection device is arranged in the greenhouse body; the water collection device is provided with an air inlet and an air outlet; a condensation portion and a reheating portion are arranged in the water collection device; and the water recycling type greenhouse further includes an energy supply system. Air in the greenhouse body can be poured into the water collection device from the air inlet, flow through the condensation portion and the reheating portion in sequence, and finally be discharged into the greenhouse body again from the air outlet. When the heated air is discharged into the greenhouse body again, a decrease of the temperature of the greenhouse is not likely to occur, and normal growth of plants is not easily affected.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method includes forming first channel structures, second channel structures, and third channel structures. The method also includes forming gate dielectric layers surrounding the first channel structures, the second channel structures, and the third channel structures and forming dipole layers over the gate dielectric layers. The method also includes forming a dummy material in a first space between the first and the second channel structures and in a second space between the second and the third channel structures and removing first portions of the dummy material. The method also includes implanting first dopants in the dummy material in the first space and removing second portions of the dummy material in the first space and the second space. The method also includes removing the dipole layers in the top device region and completely removing the dummy material.

Abstract: A method for fabricating an integrated circuit device is provided. The method includes depositing a first dielectric layer; depositing a second dielectric layer over the first dielectric layer; etching a trench opening in the second dielectric layer, wherein the trench opening exposes a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer, the first sidewall of the second dielectric layer extends substantially along a first direction, and the second sidewall of the second dielectric layer extends substantially along a second direction different from the first direction in a top view; forming a via etch stop layer on the first sidewall of the second dielectric layer, wherein the second sidewall of the second dielectric layer is free from coverage by the via etch stop layer; forming a conductive line in the trench opening; and forming a conductive via over the conductive line.