Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a substrate and a fin protruding from the substrate in a first direction. In addition, the fin includes a well region and an anti-punch through region over the well region. The semiconductor structure further includes a barrier layer formed over the anti-punch through region and channel layers formed over the fin and spaced apart from the barrier layer in the first direction. The semiconductor structure further includes a first liner layer formed around the fin and an isolation structure formed over the first liner layer. The semiconductor structure further includes a gate wrapping around the channel layers and extending in a second direction. In addition, a top surface of the barrier layer is higher than a top surface of the first liner layer in a cross-sectional view along the second direction.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a semiconductor layer formed over the substrate. The semiconductor device further includes a first channel layer and a second channel layer and a first insulating structure interposing the first channel layer and the semiconductor layer and a second insulating structure interposing the first channel layer and the second channel layer. The semiconductor device further includes a gate stack abutting the first channel layer and the second channel layer, and the gate stack includes a first portion vertically sandwiched between the first channel layer and the semiconductor layer and a second portion vertically sandwiched between the first channel layer and the second channel layer.

Abstract: This document describes low-latency Bluetooth connectivity in a wireless network in which a central node and a peripheral node establish a connection. During a first connection interval, the peripheral node receives a packet from the central node to synchronize communication with the central node, and based on receiving the packet, the peripheral node transmits a first fixed-length packet. If the first fixed-length packet fails to reach the central node, the peripheral node does not receive an acknowledgement, ACK, from the central node during the first connection interval and retransmits the first fixed-length packet during the first connection interval.

Abstract: An electronic device includes a substrate, a plurality of first retaining walls, a second retaining wall, and a light emitting element. The first retaining walls are arranged on the substrate. The second retaining wall is arranged on the substrate and disposed within one of the first retaining walls. The light emitting element is arranged on the substrate and disposed between the second retaining wall and one of the first retaining walls adjacent to the second retaining wall. In a cross section, there are a first distance between the light emitting element and the one of the first retaining walls, and a second distance between the light emitting element and the second retaining wall, wherein the second distance is smaller than the first distance.

Abstract: A backlight module includes a substrate, a plurality of light emitting elements, a light guide device and a plurality of reflective elements. The light emitting elements are arranged on the substrate. The light guide device includes a plurality of light guide portions arranged to respectively correspond to the light emitting elements, wherein each of the light guide portions is provided with a first through hole, and the first through holes of the light guide portions respectively expose the light emitting elements. The reflective elements are respectively arranged on the light emitting elements, wherein, in a normal direction of the substrate, the reflective elements respectively overlap with the first through holes of the light guide portions.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a well region in a substrate and forming an anti-punch through region in a top portion of the well region. The method further includes forming a barrier layer over the anti-punch through region and alternately stacking first semiconductor material layers and second semiconductor material layers over the barrier layer. The method further includes patterning the first semiconductor material layers, the second semiconductor material layers, the barrier layer, and the anti-punch through region to form a fin and removing the first semiconductor material layers and the barrier layer to expose the anti-punch through region. The method further includes forming a gate wrapping around the second semiconductor material layers.

Abstract: An ultra-high phosphorus molten iron low-cost smelting method for polar steel includes successively deoxidizing and tapping alloying raw materials including molten iron; performing slag adjusting and refining on the molten steel obtained in the converter smelting step to obtain a refined molten steel; vacuum degassing the refined molten steel; and performing continuous casting on the molten steel obtained after the RH degassing step to obtain a cast billet.

Abstract: In one embodiment, a method includes accessing a first utterance of a content by a first speaker, generating first discrete speech units from the first utterance based on a speech-learning model, wherein each of the first discrete speech units is associated with a speech cluster, accessing second utterances of the content by second speakers different from the first speaker, and training a speech normalizer by processing each of the second utterances using the speech normalizer to generate second discrete speech units and updating the speech normalizer by using the first discrete speech units as an optimization target for the second discrete speech units associated with each of the second utterances.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor fin. The semiconductor structure also includes a first nanowire vertically overlapping a top surface of the semiconductor fin, a second nanowire vertically overlapping the first nanowire, and a third nanowire vertically overlapping the second nanowire. The semiconductor structure further includes a gate wrapping around the first nanowire, the second nanowire, and the third nanowire. A first portion of the gate vertically sandwiched between the first nanowire and the second nanowire is greater than a second portion of the gate vertically sandwiched between the second nanowire and the third nanowire.

Abstract: A steel board for polar marine engineering and a preparation method therefor. According to weight percentage, the components of the steel board are: C: 0.06-0.09%, Si: 0.20-0.35%, Mn: 1.48-1.63%, Nb: 0.020%-0.035%, Ti: 0.010%-0.020%, V: 0.020%-0.035%, Ni: 0.08%-0.17%, Als: 0.015%-0.040%, P: ?0.013% and S: ?0.005%. The preparation method for the steel board comprises: pre-refining, refining and casting to obtain a cast billet, and the slowly cooling down same. The slowly cooled billet is heated and then rolled out to obtain the steel board; and the steel board is cooled down and ready. The steel has an excellent comprehensive performance in terms of having high strength and low temperature resistance, being easy to weld and corrosion proof, and the steel has good low-temperature aging impact toughness.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a semiconductor layer formed over a substrate. The semiconductor device further includes an isolation region covering the semiconductor layer and nanostructures formed over the semiconductor layer. The semiconductor layer further includes a gate stack wrapping around the nanostructures. In addition, the isolation region is interposed between the semiconductor layer and the gate stack.

Abstract: The present disclosure describes a semiconductor device having facet-free epitaxial structures with a substantially uniform thickness. The semiconductor device includes a fin structure on a substrate. The fin structure includes a fin bottom portion and a fin top portion. A top surface of the fin bottom portion is wider than a bottom surface of the fin top portion. The semiconductor device further includes a dielectric layer on the fin top portion, an amorphous layer on the dielectric layer, and an epitaxial layer. The epitaxial layer is on a top surface of the amorphous layer, sidewall surfaces of the amorphous layer, the dielectric layer, the fin top portion, and the top surface of the fin bottom portion.

Abstract: A semiconductor device includes a first transistor device of a first type. The first transistor includes first nanostructures, a first pair of source/drain structures, and a first gate electrode on the first nanostructures. The semiconductor device also includes a second transistor device of a second type formed over the first transistor device. The second transistor device includes second nanostructures over the first nanostructures, a second pair of source/drain structures over the first pair or source/drain structures, and a second gate electrode on the second nanostructures and over the first nanostructures. The semiconductor device also includes a first isolation structure between the first and second nanostructures. The semiconductor device further includes a second isolation structure in contact with a top surface of the first pair of source/drain structures. The semiconductor device also includes a seed layer between the second isolation structure and the second pair of source/drain structures.

Abstract: A method for forming a gate-all-around structure is provided. The method includes forming a plurality of a first type of semiconductor layers and a plurality of a second type of semiconductor layers alternately stacked over a fin. The first type of semiconductor layers includes a first semiconductor layer and a second semiconductor layer, and the first semiconductor layer has a thickness greater than that of the second semiconductor layer. The method also includes removing the second type of semiconductor layers. In addition, the method includes forming a gate to wrap around the first type of semiconductor layers.

Abstract: A portable electronic device, including a first body and a second body, is provided. The second body includes a support structure and a display panel. The support structure is pivotally connected to the first body and is connected to the display panel. The support structure has a first bendable portion. An included angle between the first bendable portion and an edge of the support structure is 45 degrees. The support structure is adapted to be bent along the first bendable portion, so that the second body switches between a first mode and a second mode relative to the first body.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a well region in a substrate and forming an anti-punch through region in a top portion of the well region. The method further includes forming a barrier layer over the anti-punch through region and alternately stacking first semiconductor material layers and second semiconductor material layers over the barrier layer. The method further includes patterning the first semiconductor material layers, the second semiconductor material layers, the barrier layer, and the anti-punch through region to form a fin and removing the first semiconductor material layers and the barrier layer to expose the anti-punch through region. The method further includes forming a gate wrapping around the second semiconductor material layers.

Abstract: A method for reducing stress induced defects in heterogeneous epitaxial interfaces of a semiconductor device is disclosed. The method includes forming a fin structure with a fin base, a superlattice structure on the fin base, forming a polysilicon gate structure on the fin structure, forming a source/drain (S/D) opening within a portion of the fin structure uncovered by the polysilicon gate structure, modifying the first surfaces of the first layers to curve a profile of the first surfaces, depositing first, second, and third passivation layers on the first, second, and third surfaces, respectively, forming an epitaxial S/D region within the S/D opening, and replacing the polysilicon gate structure with a metal gate structure. The superlattice structure includes first and second layers with first and second lattice constants, respectively, and the first and second lattice constants are different from each other.

Abstract: A backlight and a display device are provided herein, which is related to the field of display technology and intends to improve visual effect of the image displayed by the display device. The backlight may include a back plate, a light guide plate and a light source. The back plate includes an accommodation groove, and the light guide plate includes a holding groove at a first side surface of the light guide plate. The light source includes at least one light emitting element. The holding groove is configured to hold at least a portion of the at least one light emitting element, and the accommodation groove is configured to accommodate the light guide plate and the light source.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate and a semiconductor layer formed over the substrate. The semiconductor device further includes a first channel layer and a second channel layer and a first insulating structure interposing the first channel layer and the semiconductor layer and a second insulating structure interposing the first channel layer and the second channel layer. The semiconductor device further includes a gate stack abutting the first channel layer and the second channel layer, and the gate stack includes a first portion vertically sandwiched between the first channel layer and the semiconductor layer and a second portion vertically sandwiched between the first channel layer and the second channel layer.