Abstract: A semiconductor device comprises a substrate having an N-type field effect transistor (NFET) region and a P-type field effect transistor (PFET) region, a plurality of first nanowires in the PFET region and arranged in a first direction substantially perpendicular to the substrate and a plurality of second nanowires in the NFET region and arranged in the first direction. A composition of the first nanowires is different from a composition of the second nanowires, and one of the first nanowires is substantially aligned with one of the second nanowires in a second direction substantially perpendicular to the first direction.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a first recess in a substrate. The method includes forming a first semiconductor layer into the first recess. The first semiconductor layer and the substrate are made of different materials, and a first top surface of the first semiconductor layer is lower than a second top surface of the substrate. The method includes forming a second semiconductor layer over the first top surface and the second top surface, wherein a third top surface of the second semiconductor layer over the first top surface is substantially level with the second top surface of the substrate, and the second semiconductor layer and the substrate are made of different materials. The method includes forming a third semiconductor layer over the second semiconductor layer. The third semiconductor layer and the second semiconductor layer are made of different materials.

Abstract: A method for building agreements among a plurality of nodes in a distributed system to improve the throughput of the distributed system is disclosed. The method comprises performing a first Byzantine Agreement protocol; selecting a first leader node from the plurality of nodes; broadcasting a fast message from the first leader node to all other nodes when a clock is equal to 0; determining whether the first leader node decides a block according to a number of a plurality of fast-vote messages received from all other nodes by the first leader node and a value of the clock; and performing a second Byzantine Agreement protocol if it is determined that the first leader node cannot decide a block.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a substrate and a first fin and a second fin formed over the substrate. The semiconductor structure further includes a first anti-punch through region formed in the first fin and a second anti-punch through region formed in the second fin and first nanostructures formed over the first fin and second nanostructures formed over the second fin. The semiconductor structure further includes a barrier layer formed over the second anti-punch through region and a first gate formed around the first nanostructures. The semiconductor structure further includes a second gate formed around the second nanostructures. In addition, an interface between the barrier layer and the second anti-punch through region is higher than an interface between the first anti-punch through region and the first gate.

Abstract: A method for a node to issue a new block is used for a distributed system in which transactions and records are organized in block. The method comprises the steps of: determining a value R from a common reference string; computing a value s associated to a value of a status with a private key at a node, wherein the private key is a private signing key corresponding to the node, and the value s can only be computed by the node with the private key; computing a value r by taking the value s into a function H at the node, wherein the value r is unpredictable and unique to other nodes; and determining whether the node obtains a right to issue a new block by taking the values R and r into a function V.

Abstract: A method of semiconductor fabrication includes positioning a substrate on a susceptor in a chamber and growing an epitaxial feature on the substrate. The growing includes providing UV radiation to a first region of a surface of the substrate and while providing the UV radiation, growing a first portion of the epitaxial feature on the first region of the surface while concurrently growing a second portion of the epitaxial feature on a second region of the surface of the substrate. The first portion of the epitaxial feature can be greater in thickness than the second portion of the epitaxial feature.

Abstract: A connection structure is connected between a wrench head of a torque wrench and a socket, and the connection structure contains: a body, a casing, and two positioning members. The body includes a coupling section, a driving section, an extension defined between the coupling section and the driving section, and two bolts oppositely inserted into the body from an outer wall of the coupling section. The casing includes a first part, a second part, and two accommodation grooves respectively defined on two inner walls of the first part and the second part and located adjacent to the coupling section. Each of the two positioning members is housed in each of the two accommodation grooves, wherein each positioning member includes multiple toothed projections arranged on an inner wall thereof and abutting against each of the two bolts.

Abstract: Present disclosure provides a semiconductor structure including a first transistor and a second transistor. The first transistor includes a semiconductor substrate having a top surface and a first anti-punch through region doped with a first conductivity dopant at the top surface. The first transistor further includes a first channel over the top surface of the semiconductor substrate by a first distance. The second transistor includes a second anti-punch through region doped with a second conductivity dopant at the top surface of the semiconductor substrate. The second transistor further includes a second channel over the top surface of the semiconductor substrate by a second distance greater than the first distance. Present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Abstract: Present disclosure provides gate-all-around structure including a semiconductor fin having a top surface, a first nanowire over the top surface, a first space between the top surface and the first nanowire, an Nth nanowire and an (N+1)th nanowire over the first nanowire, and a second space between the Nth nanowire and the (N+1)th nanowire. The first space is greater than the second space. Present disclosure also provides a method for manufacturing the gate-all-around structure described herein.

Abstract: An electronic device includes a first body, a second body, a function element, and a coupling assembly. The first body has a first sleeve. The second body has a second sleeve. The function element is disposed on the first body and the second body, and two ends of the function element are respectively disposed through the first sleeve and the second sleeve. The coupling assembly is detachably connected to the function element and disposed on the first sleeve or the second sleeve. Specifically, the first body and the second body are adapted to be opened or closed relatively through the function element and the coupling assembly, and the function element is adapted to be separated from the first sleeve and the second sleeve along an axial direction.

Abstract: A support device adapted to support an electronic device is provided. The electronic device has a display surface. The support device includes a base, a support frame, and at least one torque fixing assembly. The base includes a first arc surface portion. The support frame includes a second arc surface portion opposite to the first arc surface portion and an axis. The support frame rotates along the axis such that the second arc surface portion slides relative to the first arc surface portion and the electronic device switches between a first use state and a second use state. The torque fixing assembly is disposed at the first arc surface portion and the second arc surface portion. When the second arc surface portion slides relative to the first arc surface portion, the second arc surface portion rubs against the torque fixing assembly and torque is generated.

Abstract: A pivoting mechanism includes a first bracket having a first sliding slot, a second bracket having a second sliding slot, a torsion structure located between the first bracket and the second bracket, a first and a second sliding members and a first and a second elastic arms. The first and the second brackets are respectively pivoted to a first and a second sides of the torsion structure. The first sliding member is pivotally connected to the first side and slidably disposed in the first sliding slot. The second sliding member is pivotally connected to the second side and is slidably disposed in the second sliding slot. The first elastic arm connects the first sliding member and leans against a first inclined sidewall of the first sliding slot. The second elastic arm connects the second sliding member and leans against a second inclined sidewall of the second sliding slot.

Abstract: A support device adapted to support an electronic device is provided. The electronic device has a display surface. The support device includes a base, a support frame, and at least one torque fixing assembly. The base includes a first arc surface portion. The support frame includes a second arc surface portion opposite to the first arc surface portion and an axis. The support frame rotates along the axis such that the second arc surface portion slides relative to the first arc surface portion and the electronic device switches between a first use state and a second use state. The torque fixing assembly is disposed at the first arc surface portion and the second arc surface portion. When the second arc surface portion slides relative to the first arc surface portion, the second arc surface portion rubs against the torque fixing assembly and torque is generated.

Abstract: An injector, comprising, an injector body comprising, an inner wall that defines an injector cavity for fluid, at least one inlet channel into the injector cavity, and at least one outlet channel from the injector cavity, a plunger that defines at least one passageway between the injector cavity and the at least one outlet channel, the plunger being movable longitudinally in the injector cavity between at least: a first open arrangement in which the at least one passageway is positioned to direct fluid into the at least one outlet channel at a first position, and a second open arrangement in which the at least one passageway is positioned to direct fluid into the at least one outlet channel at a second position different from the first position.

Abstract: An electronic device including a first body having a first recess, a second body having a second recess corresponding to the first recess, and at least one dual-shaft hinge module connected to the first and the second bodies and disposed at inner sides of the first and the second bodies. The first and the second bodies rotate relatively via the dual-shaft binge module to be opened or closed. The dual-shaft hinge module has a dual protrusion structure movably accommodated in the first and the second recesses, and the dual protrusion structure moves into or out of the first and the second recesses when the first and the second bodies rotate relatively via the dual-shaft hinge module.

Abstract: In one aspect the present subject matter is directed to a system for cooling a turbine engine. The system includes a cooling medium source, a stator vane having an internal flow passage that is in fluid communication with the cooling medium source and a turbine shroud assembly having an internal flow passage that is in fluid communication with the internal flow passage of the stator vane. The system allows for reduced peak thermal gradients between a cooling medium provided by the cooling medium source and various turbine hardware components such as the turbine shroud assembly.

Abstract: A T-torque wrench contains: a body including a horizontal handle and a vertical extension. The vertical extension has a fitting connector formed on a bottom thereof and configured to fit with sockets of various sizes, and the vertical extension has a strain gauge arranged on one end thereof so as to detect operation torques of the T-torque wrench, the horizontal handle has a tire-pressure detection connector connected on one end thereof. The body includes a casing covered thereon and includes a digital processing unit electrically connected with the strain gauge of the vertical extension and the tire-pressure detection connector of the horizontal handle, the casing includes a display module arranged thereon and electrically connected with the digital processing unit, and the casing includes a control module arranged thereon between the display module and the horizontal handle, wherein the control module is electrically connected with the digital processing unit.

Abstract: A pivoting mechanism includes a first bracket, a second bracket, a torsion structure, a first sliding member, a second sliding member, a first elastic arm and a second elastic arm. The first bracket has a first sliding slot. The second bracket has a second sliding slot. The torsion structure is located between the first bracket and the second bracket. The first bracket is pivoted to a first side of the torsion structure, and the second bracket is pivoted to a second side of the torsion structure. The first sliding member is pivotally connected to the first side of the torsion structure and slidably disposed in the first sliding slot. The second sliding member is pivotally connected to the second side of the torsion structure and is slidably disposed in the second sliding slot. The first elastic arm connects the first sliding member and leans against a first inclined sidewall of the first sliding slot.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A semiconductor device comprises a substrate having an N-type field effect transistor (NFET) region and a P-type field effect transistor (PFET) region, a plurality of first nanowires in the PFET region and arranged in a first direction substantially perpendicular to the substrate and a plurality of second nanowires in the NFET region and arranged in the first direction. A composition of the first nanowires is different from a composition of the second nanowires, and one of the first nanowires is substantially aligned with one of the second nanowires in a second direction substantially perpendicular to the first direction.