Abstract: A semiconductor device includes a substrate, a first gate, a second gate, and an insulating structure. The substrate includes a first fin and a second fin. The first gate is disposed over the first fin. The second gate is disposed over the second fin. A gap is formed between the first gate and the second gate, and the gap gets wider toward the substrate. The insulating structure is disposed in the gap. The insulating structure has a top surface and a bottom surface opposite to each other. The bottom surface faces the substrate. An edge of the top surface facing the first gate is curved inward the top surface.

Abstract: The present disclosure provides an inductor structure. The inductor structure, comprising a first surface, a second surface intersecting with the first surface, a first conductive pattern and a second conductive pattern. The first conductive pattern is formed on the first surface. The second conductive pattern is formed on the second surface. The first conductive pattern is connected with the second conductive pattern.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a first molding material disposed around the integrated circuit die, and a through-via disposed within the first molding material. A first side of a redistribution layer (RDL) is coupled to the integrated circuit die, the through-via, and the first molding material. A second molding material is over a second side of the RDL, the second side of the RDL being opposite the first side of the RDL. The packaged semiconductor device includes an antenna over the second molding material.

Abstract: Provided is an electronic device, including a main body, a first functional module, a linkage mechanism, and a second functional module. The first functional module is slidably provided on the main body between a first position and a second position. The linkage mechanism is provided on the main body and is connected to the first functional module. The second functional module is linked to the linkage mechanism and is provided on the main body in a turnover manner, in which when the first functional module is located at the first position, the second functional module is covered by the first functional module, and when the first functional module moves to the second position and the second functional module is exposed, the second functional module is driven by the linkage mechanism to be turned up.

Abstract: A transfer film providing a textured finish to the surface of a glass object comprises a color ink layer, a texture layer attached to a surface of the ink layer, a metal layer attached to a surface of the texture layer opposite from and contacting the ink layer, and an adhesive layer attached to a surface of the metal layer opposite from and contacting the texture layer. A transfer sticker and a glass product using the transfer film are also provided.

Abstract: A fan-out package structure is disclosed. The fan-out package structure includes an antenna main body; a redistribution layer (RDL); and an antenna auxiliary body in the RDL. An antenna system is also disclosed. The antenna system includes: an antenna main body, arranged to provide a first resonance; and an antenna auxiliary body, arranged to provide a second resonance through parasitic coupling to the antenna main body; wherein a dimension of the antenna main body is greater than a dimension of the antenna auxiliary body. An associated semiconductor packaging method is also disclosed.

Abstract: A method of fabricating three-dimensional patterns on a workpiece includes steps of providing a transparent film and forming a three-dimensional patterns on the transparent film. A layer of adhesive is coated on the three-dimensional patterns. A heat transfer film is used in transferring the three-dimensional patterns from the heat transfer film to a main surface of the workpiece using a vacuum heat transfer printing method.

Abstract: A method of manufacturing a semiconductor structure includes providing a transceiver, forming a molding to surround the transceiver, forming a plurality of recesses extending through the molding, disposing a conductive material into the plurality of recesses to form a plurality of vias, disposing and patterning an insulating layer over the molding, the plurality of vias and the transceiver, and forming a redistribution layer (RDL) over the insulating layer, wherein the RDL comprises an antenna disposed over the insulating layer and a dielectric layer covering the antenna, and a portion of the antenna is extended through the insulating layer and is electrically connected with the transceiver.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.

Abstract: A method for manufacturing an oxidation-resistant glass-mounted photograph includes steps of providing a transparent base, the transparent base includes a front surface and a rear surface opposite to the front surface. A UV inkjet printer sprays UV-curable glue onto the rear surface of the transparent base to form a bonding layer, and an electronic file of a pattern layer is installed into the UV inkjet printer, a layer of UV-curable ink on the bonding layer is printed on the bonding layer using the UV inkjet printer according to the electronic file of the pattern layer. The layer of UV-curable ink is cured to form the pattern layer providing a representation of a desired image.

Abstract: A structure includes an encapsulating material, and a coil including a through-conductor. The through-conductor is in the encapsulating material, with a top surface of the through-conductor coplanar with a top surface of the encapsulating material, and a bottom surface of the through-conductor coplanar with a bottom surface of the encapsulating material. A metal plate is underlying the encapsulating material. A slot is in the metal plate and filled with a dielectric material. The slot has a portion overlapped by the coil.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a first molding material disposed around the integrated circuit die, and a through-via disposed within the first molding material. A first side of a redistribution layer (RDL) is coupled to the integrated circuit die, the through-via, and the first molding material. A second molding material is over a second side of the RDL, the second side of the RDL being opposite the first side of the RDL. The packaged semiconductor device includes an antenna over the second molding material.

Abstract: A method of manufacturing a semiconductor structure includes providing a transceiver, forming a molding to surround the transceiver, forming a plurality of recesses extending through the molding, disposing a conductive material into the plurality of recesses to form a plurality of vias, disposing and patterning an insulating layer over the molding, the plurality of vias and the transceiver, and forming a redistribution layer (RDL) over the insulating layer, wherein the RDL comprises an antenna disposed over the insulating layer and a dielectric layer covering the antenna, and a portion of the antenna is extended through the insulating layer and is electrically connected with the transceiver.

Abstract: The present disclosure provides an inductor structure. The inductor structure, comprising a first surface, a second surface intersecting with the first surface, a first conductive pattern and a second conductive pattern. The first conductive pattern is formed on the first surface. The second conductive pattern is formed on the second surface. The first conductive pattern is connected with the second conductive pattern.

Abstract: An optical device includes a substrate, a reflective layer disposed over the substrate, and a metalens disposed over the reflective layer. The metalens includes a plurality of nanopillars, the plurality of nanopillars together specifying a phase profile such that the metalens has a focal length that is substantially constant over a wavelength range of an incident light of about 490 nm to about 550 nm.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.

Abstract: A glass-mounted photograph includes a transparent plate with front and rear surfaces. A bonding layer is formed on the rear surface, and a pattern layer is formed on the bonding layer, the pattern layer being made from UV curable ink to present a picture that could have been photographed. The pattern layer of the oxidation-resistant glass-mounted photograph 100 is formed by spray printing color UV ink on the free surface of the bonding layer, when the UV ink is cured, the pattern layer is firmly formed on the surface of the transparent plate, and the pattern layer is an UV ink layer, the pattern layer 16 has an advantage of permanent preservation, and not become yellow as time goes on.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack.

Abstract: A method for forming the semiconductor device structure is provided. The method includes forming a first metal layer over a substrate and forming a dielectric layer over the first metal layer. The method includes forming an antireflection layer over the dielectric layer, forming a hard mask layer over the antireflection layer and forming a patterned photoresist layer over the hard mask layer. The method includes etching a portion of the antireflection layer by performing a first etching process and etching through the antireflection layer and etching a portion of the dielectric layer by performing a second etching process. The method includes etching through the dielectric layer by performing a third etching process to form a via portion on the first metal layer. The via portion includes a first sidewall and a second sidewall, and the slope of the first sidewall is different from that of the second sidewall.

Abstract: A touch system is disclosed herein. The touch system includes detecting units and a control unit. The detecting units are disposed around a detecting area, and form a plurality of scan lines therebetween. The control unit is configured to detect first crossing points according to a transmission status of each of the scan lines, to delete ghost points of the first crossing points according to a first scan line having a first slope value of the scan lines to generate second crossing points, and to divide the second crossing points into groups to output touch points.