Abstract: A package structure is provided. The package structure includes a substrate, a first electronic component, a first electrical connector, and a protective layer. The first electronic component is over the substrate. The first electrical connector is between the substrate and the first electronic component. The protective layer encapsulates the first electrical connector. The protective layer has a first curved lateral surface concave toward the first electrical connector and recessed with respect to a lateral surface of the first electronic component.

Abstract: A connection cable (1) includes an insulation seat (10), a circuit board (20) and a protection cover (30). The insulation seat (10) includes a main body (11) formed with a slot (110) and a conduction opening (111). The conduction opening (111) is connected to the slot (110) and located on the bottom side of the main body (11). The circuit board (20) includes a substrate (21) and a plurality of conductive portions (22) disposed on the substrate (21). The substrate (21) is inserted in the slot (110). The conductive portions (22) are exposed from the conduction opening (111). The protection cover (30) is combined on the main body (11) to shield the conduction opening (111). The protection cover (30) is pushed by the dock connector (2) to expose the conduction opening (111) and to be separated from the main body (11).

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: A mouse and a gaming system are respectively provided. The gaming system includes a mouse and an intermediate application program. The mouse includes an operation module, a solid-state disk (SSD), and a processing module. The processing module is connected to an electronic device. When the electronic device runs a game, the processing module records an operation signal generated by an operation of a user in the SSD. The processing module can store settings made by the user to the game and to the mouse in the SSD. When the game is ended in the electronic device, the processing module stores a game result information in the SSD. When the electronic device runs the same game and the same mouse is used to play the same game, the user can read the settings in the SSD to quickly perform the same settings on the game and the mouse.

Abstract: An electronic module with a leak-proof structure is provided. The electronic module with a leak-proof structure includes a carrier, a heat source, a metal frame, an elastic isolating member, a liquid-metal material and a heatsink. The heat source is disposed on the carrier. The metal frame is disposed on the carrier. The metal frame surrounds the heat source. The elastic isolating member is disposed between the metal frame and the heat source. The elastic isolating member includes a continuous wall and the base plate, the base plate is connected to the bottom of the continuous wall, a central opening is formed on the base plate, the heat source corresponds to the central opening, and the continuous wall defines a receiving space. The liquid-metal material is disposed on the heat source. The heatsink includes a heatsink bottom and a protrusion, wherein the protrusion is inserted into the receiving space.

Abstract: The present disclosure is related to an intelligent charging management system, a charging management device, and a charging management method. The charging management device is used to execute the charging management method for determining a chargeable power value of the electric vehicle according to an operation mode of the electric vehicle and an available capacity of a charging point, and determining a charging parking lot for providing to the electric vehicle according to the chargeable power value of the electric vehicle and available charging parking lots of the charging point. In the way, the charging power and charging parking lots of the charging point can be allocated according to the charging requirements of electric vehicles, electric vehicles can be accurately and efficiently charged and the damage caused by charging current to the battery is reduced, so as the purpose for improving charging efficiency of the charging point is determined.

Abstract: A non-spill drinking lid comprising a first member, a second member, detachably attached to the first member and a collar detachably attached to the second member. The first member has a plurality of protrusions extending from an interior surface towards the second member, the plurality of protrusions are arranged to maintain a fluid channel between the first member and the second member, the first member comprises a flexible outer rim, the collar comprises an outer rim, and the flexible first member outer rim abuts the collar outer rim and the flexible first member outer rim is deformable to extend the fluid channel through the non-spill drinking lid.

Abstract: A backup power supply system and a control method thereof are provided. The backup power supply system includes a power supply circuit and an uninterruptible power supply. The power supply circuit is configured to receive utility power, and the uninterruptible power supply is connected to the power supply circuit and stores backup power. When the utility power is normal, the power supply circuit supplies power to the uninterruptible power supply, and the uninterruptible power supply outputs a first alternating current voltage that meets a utility power specification to the alternating current load. When the utility power is abnormal, the uninterruptible power supply outputs a second alternating current voltage that meets the utility power specification to the alternating current load.

Abstract: A solution for preserving extracellular vesicles/exosomes has a carrier solvent selected from a group consisting of polysorbate 80, sucrose, and polyethylene glycol 3350/4000; and a stabilizer selected from a group consisting of salts, amino acids, and amino acid salts; wherein the pH of the preservation solution ranges from 5 to 7.4.

Abstract: A method includes a computer receiving a request to conduct an interaction from a mobile device. The computer obtains a computer address and provides the computer address to the mobile device. The mobile device provides an access request to the computer address, and the access request is thereafter routed to an identity provider computer. The identity provider computer identifies identity data associated with the mobile device or a user of the mobile device. The computer obtains the identity data or a derivative of the identity data from the identity provider computer. The computer determines if the identity data or the derivative of the identity data matches previously stored identity data or a previously stored derivative of identity data. If a match is determined, the computer provides a list of user device identifiers to the mobile device.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: A LIDAR system includes a laser source configured to generate laser light pulses, a first DMD, a second DMD and a two-dimensional (2D) sensor array. The first DMD is configured to receive the laser light pulses and diffractively steer the light pulses to sequentially illuminate different sub-regions within the extended region. The second DMD is configured to receive reflected light pulses from the different sub-regions in a sequential manner as each of the different sub-regions is illuminated by the light pulses. The 2D sensor array configured to receive reflected light pulses from the second DMD and form an image of the different sub-regions as the reflected light pulses from each of the different sub-regions is sequentially received from the second DMD.

Abstract: A fan control system is provided, which is used for dissipating heat from a computer device. The fan control system includes a control interface and multiple fan modules. Each one of the fan modules includes a controller, a fan, and a sensor. The controller correspondingly controls a rotational speed of the fan according to environment data transmitted by the connected sensor. The controller transmits real-time fan information to the control interface, and the real-time fan information includes the environment data, identification data, wind direction data, and rotational speed data. The control interface receives the real-time fan information transmitted by the fan modules, and the control interface controls at least one of the fans to change a current rotational speed according to operation information and the real-time fan information transmitted by the fan modules. The fan control system allows the computer device to achieve a good heat-dissipation effect.

Abstract: An integrated circuit device includes a substrate, an isolation feature, a memory cell, and a semiconductor device. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. The isolation feature is in the transition region. A top surface of the isolation feature has a first portion and a second portion lower than the first portion, the second portion of the top surface of the isolation feature is between the cell region and the first portion of the top surface of the isolation feature, and a bottom surface of the isolation feature has a step height directly below the second portion of the top surface of the isolation feature. The is memory cell over the cell region of the substrate. The semiconductor device is over the peripheral region of the substrate.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: An integrated circuit device includes a substrate, a first isolation feature, a memory cell, and a semiconductor device. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. The first isolation feature is in the transition region. The substrate includes a protrusion portion between a first portion and a second portion of the first isolation feature, the second portion is between the first portion and the cell region, and a top surface of the first portion of the first isolation feature has a first part and a second part lower than the first part, and the second part is between the first part and the second portion of the first isolation feature. The memory cell is over the cell region of the substrate. The semiconductor device is over the peripheral region of the substrate.

Abstract: A mouse and a gaming system are respectively provided. The gaming system includes a mouse and an intermediate application program. The mouse includes an operation module, a solid-state disk (SSD), and a processing module. The processing module is connected to an electronic device. When the electronic device runs a game, the processing module records an operation signal generated by an operation of a user in the SSD. The processing module can store settings made by the user to the game and to the mouse in the SSD. When the game is ended in the electronic device, the processing module stores a game result information in the SSD. When the electronic device runs the same game and the same mouse is used to play the same game, the user can read the settings in the SSD to quickly perform the same settings on the game and the mouse.

Abstract: An integrated circuit device includes a substrate, a first isolation feature, a memory cell, and a semiconductor device. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. The first isolation feature is in the transition region. The substrate includes a protrusion portion between a first portion and a second portion of the first isolation feature, the second portion is between the first portion and the cell region, and a top surface of the first portion of the first isolation feature has a first part and a second part lower than the first part, and the second part is between the first part and the second portion of the first isolation feature. The memory cell is over the cell region of the substrate. The semiconductor device is over the peripheral region of the substrate.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.