Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: In an example embodiment, an EDA program receives input which includes a selection as to an FPGA die and its device package and a selection as to a structured ASIC die and its device package. If the I/O pins on the device package for the FPGA differ from the I/O pins on the device package for the structured ASIC, the EDA program determines a correspondence between the I/O pins on the two device packages (e.g., by identifying the location of the pads for I/O pins on the structured ASIC die and/or creating a virtual structured ASIC device package whose I/O pins are a superset of the I/O pins on the selected structured ASIC device package), which determination includes checking rules for resource assignments. The EDA program then stores the determined correspondence in a device database where the determined correspondence can be accessed by CAD algorithms.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate. A dummy gate is formed over the substrate. A dielectric material is formed around the dummy gate. The dummy gate is then removed to form an opening in the dielectric material. Thereafter, a work function metal layer is formed to partially fill the opening. The remainder of the opening is then filled with a conductive layer using one of a polysilicon substitute method and a spin coating method.

Abstract: A client computer may be configured to perform computer security operation services, such as malicious code scanning and protection against online threats, using one of several remotely located server computers. The client computer may be configured to determine an operational state of the server computers and determine a protection status of the client computer resulting from use of a server computer of a particular operational state. The protection status may have one of at least three levels and indicate vulnerability of the client computer. The client computer may determine the operational state of a server computer based on available bandwidth for network communication between the client computer and the server computer. The client computer may be configured to allow for automatic or manual selection of another server computer when the currently selected server computer results in the client computer having a protection status below a threshold level.

Abstract: A compensation plate used in a film coating device includes a main body defining a plurality of guiding holes, a plurality of moveable blades connected to the main body, and a plurality of connectors. Each of the plurality of moveable blades defines two through holes corresponding to one of the plurality of guiding holes. The plurality of connectors engage in the through holes and the guiding holes, fix each of the plurality of moveable blades to the main body when each of the plurality of connectors is fastened, and slide in each of the plurality of guiding holes with each of the moveable blades when each of the plurality of connectors releases.

Abstract: A semiconductor device includes a blocking structure between a metal layer and at least one underlying layer. The blocking structure has a first layer configured for preventing diffusion of metal from the metal layer into the at least one underlying layer, and a second layer configured for enhancing electrical performance of the semiconductor device.

Abstract: A structure and method for replacement metal gate technology is provided for use in conjunction with semiconductor fins or other devices. An opening is formed in a dielectric by removing a sacrificial gate material such as polysilicon. The surfaces of the semiconductor fin within which a transistor channel is formed, are exposed in the opening. A replacement metal gate is formed by forming a diffusion barrier layer within the opening and over a gate dielectric material, the diffusion barrier layer formation advantageously followed by an in-situ plasma treatment operation. The treatment operation utilizes at least one of argon and hydrogen and cures surface defects in the diffusion barrier layer enabling the diffusion barrier layer to be formed to a lesser thickness. The treatment operation decreases resistivity, densifies and alters the atomic ratio of the diffusion barrier layer, and is followed by metal deposition.

Abstract: A control system is used for maintaining color of a display device, wherein the color is g formed by brightness of a first, second and a third color elements. The first, second and the third color elements have a first brightness, second brightness and a third brightness respectively and a luminance ratio of the first brightness, second brightness and the third brightness. The control system comprises a light-detecting member, a processing unit and a light source driver. The light-detecting member is used for detecting brightness of the first, second and the third color elements. The processing unit is used for calculating a first attenuation brightness of the first color element, second attenuation brightness of the second color element and a third attenuation brightness of the third color element.

Abstract: The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a substrate. A dummy gate is formed over the substrate. A dielectric material is formed around the dummy gate. The dummy gate is then removed to form an opening in the dielectric material. Thereafter, a work function metal layer is formed to partially fill the opening. The remainder of the opening is then filled with a conductive layer using one of a polysilicon substitute method and a spin coating method.

Abstract: The present disclosure provides various methods of fabricating a semiconductor device. A method of fabricating a semiconductor device includes providing a semiconductor substrate and forming a gate structure over the substrate. The gate structure includes a first spacer and a second spacer formed apart from the first spacer. The gate structure also includes a dummy gate formed between the first and second spacers. The method also includes removing a portion of the dummy gate from the gate structure thereby forming a partial trench. Additionally, the method includes removing a portion of the first spacer and a portion of the second spacer adjacent the partial trench thereby forming a widened portion of the partial trench. In addition, the method includes removing a remaining portion of the dummy gate from the gate structure thereby forming a full trench. A high k film and a metal gate are formed in the full trench.

Abstract: A projector includes a light source assembly, a digital micro-mirror device, and a projection lens. The light source assembly includes a lamp and a color wheel positioned for receiving light generated by the lamp. The color wheel includes a motor having a contacting portion, a filter, a light-blocker, and a light-isolating sheet. The filter is mounted on the contacting portion of the motor and includes a first area and a second area. Light beams used for forming an image only pass through the first area. The light-blocker is disposed on the filter opposite to the motor. The light-isolating sheet is disposed on the first area and positioned between the filter and the motor and configured for isolating the light beams arrived on the second area.

Abstract: A semiconductor device includes a substrate having shallow trench isolation and source/drain regions located therein, a gate stack located on the substrate between the source/drain regions, a first gate spacer on the sidewall of the gate stack, and a second gate spacer on the sidewall of the first gate spacer.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: An electronic device housing includes a substrate, a film structure, and a protective film. The film structure includes an adhesive film, a film stack, and a protective film. The adhesive film is deposited onto the substrate. The film stack is deposited onto the adhesive film alternating dielectric films and metal films. The metal films are non-continuous with a total thickness of the metal films at a predetermined value. The protective film is deposited onto an upper film of the film stack.

Abstract: A power-saving electronic device for use with a computer motherboard in a “suspend to memory” state is disclosed. The power-saving electronic device enables compulsory interruption of power supply to a south bridge chip and a super input output (SIO) chip of the computer motherboard in the “suspend to memory” state, such as an S3 state of Advanced Configuration and Power Interface (ACPI), so as to save power. After a user presses a power switch, the power-saving electronic device enables the south bridge chip and SIO chip to be powered on by a standby power supplied thereto and enables the computer motherboard to remain capable of awakening and resuming from the S3 state.

Abstract: An electronic device housing includes a substrate, a film structure, and a protective film. The film structure includes an adhesive film, a film stack, and a protective film. The adhesive film is deposited onto the substrate. The film stack is deposited onto the adhesive film alternating dielectric films and metal films. The metal films are non-continuous with a total thickness of the metal films at a predetermined value. The protective film is deposited onto an upper film of the film stack.

Abstract: A monitoring system for a vehicle includes an image capture unit, a reflective film, and a projection unit. The vehicle includes a windshield. The image capture unit is configured for acquiring visual information of the vehicle. The reflective film is formed on a predetermined area of the windshield. The projection unit is configured for projecting the images onto the predetermined area.

Abstract: A color wheel for use in a projector includes a motor having a rotor, a carrier fixed to the rotor, and a color filter attached to the carrier. The color filter includes a substrate, a plurality of first film groups and a second film group formed on the substrate. Each first film group includes a high refraction index film and a low refraction index film that are stacked. The second film group includes a trititanium pentoxide film and a low refraction index film. The second film group is formed in the color filter with a position selected from a plurality of predetermined positions using a thin film design software.

Abstract: A projector includes a light source assembly, a digital micro-mirror device, and a projection lens. The light source assembly includes a lamp and a color wheel positioned for receiving light generated by the lamp. The color wheel includes a motor having a contacting portion, a filter, a light-blocker, and a light-isolating sheet. The filter is mounted on the contacting portion of the motor and includes a first area and a second area. Light beams used for forming an image only pass through the first area. The light-blocker is disposed on the filter opposite to the motor. The light-isolating sheet is disposed on the first area and positioned between the filter and the motor and configured for isolating the light beams arrived on the second area.