Abstract: A card reader device which consumes almost no power until a user's access card is presented includes a power source module, a wireless tag reader, a switch module, and a sensor. The switch module can electrically connect and disconnect to the power source module and the wireless tag reader. The sensor can detect a change in a magnetic field caused by proximity of the access card. When the card reader device is not in use, the switch module is turned off, and the power source module does not provide power to the wireless tag reader. When the change in the magnetic field is detected by the sensor, a signal from the sensor turns on the switch module, and the power source module provides power to the wireless tag reader. A related access system employing the card reader device is also disclosed.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: A plug device for plugging in at least two optical modules is provided, wherein the plug device is disposed in a housing and includes a first circuit board, a first connecting module, and a movable module. The first connecting module includes a plurality of electrical connectors, and the movable module includes a plate, at least one frame, and at least one joining member. The electrical connectors are disposed on the first circuit board. The frame is connected to the plate and has a plurality of accommodating portions. The optical modules can be respectively accommodated in the accommodating portions. The plate can be affixed to or separated from the housing by the joining member.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: A plug device for plugging in at least two optical modules is provided, wherein the plug device is disposed in a housing and includes a first circuit board, a first connecting module, and a movable module. The first connecting module includes a plurality of electrical connectors, and the movable module includes a plate, at least one frame, and at least one joining member. The electrical connectors are disposed on the first circuit board. The frame is connected to the plate and has a plurality of accommodating portions. The optical modules can be respectively accommodated in the accommodating portions. The plate can be affixed to or separated from the housing by the joining member.

Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.

Abstract: A multifunctional headphone cable includes: a connecting line, two ends thereof respectively having an audio connection portion configured with a noise receiving microphone; a controller, configured on the connecting line and including a control circuit, the control circuit being configured with an active noise cancelling (ANC) module in connection with the noise receiving microphone, the control circuit being configured with a hearing amplifier adapted to amplify audio signals, memory module, wireless communication module and wireless charging module; and a power supply unit, configured on the connecting line and in connection with the control circuit.

Abstract: An integrated circuit includes a substrate, a first isolation feature, and a plurality of memory cells. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. A top surface of the cell region is lower than a top surface of the peripheral region, and the substrate includes at least one protrusion portion in the transition region. The first isolation feature is in the transition region and covers the protrusion portion of the substrate. The memory cells are over the cell region of the substrate.

Abstract: A multifunctional headphone cable includes: a connecting line, two ends thereof respectively having an audio connection portion configured with a noise receiving microphone; a controller, configured on the connecting line and including a control circuit, the control circuit being configured with an active noise cancelling (ANC) module in connection with the noise receiving microphone, the control circuit being configured with a hearing amplifier adapted to amplify audio signals, memory module, wireless communication module and wireless charging module; and a power supply unit, configured on the connecting line and in connection with the control circuit.

Abstract: A method for plating electrodes includes contacting a substrate with an electrolyte, the substrate comprising a plurality of working electrodes, applying an electric potential to one or more working electrodes of the plurality of working electrodes, monitoring a separate current through each of the one or more working electrodes of the plurality of working electrodes, and in response to determining that a first current through a first electrode of the plurality of working electrodes has reached a predetermined value, interrupting the first current through the first working electrode.

Abstract: In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure area surrounding the memory cell area. In the method, a protrusion of a substrate is formed in the ring structure area. The protrusion protrudes from an isolation insulating layer. A high-k dielectric film is formed, thereby covering the protrusion and the isolation insulating layer. A poly silicon film is formed over the high-k dielectric film. The poly silicon film and the high-k dielectric film are patterned. Insulating layers are formed over the patterned poly silicon film and high-k dielectric film, thereby sealing the patterned high-k dielectric film.

Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.

Abstract: A power transmission device includes a first circuit board, a conductive base, a connection element, a second circuit board, and a fixing element. The conductive base is fixed on the first circuit board. The connection element is disposed on the conductive base. The second circuit board is fixed on the connection element. The fixing element is disposed on the second circuit board, and connected to the conductive base by penetrating through the second circuit board and the connection element. The first circuit board is electrically connected to the second circuit board via the conductive base and the connection element.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: A wireless communication system using mimicked near field communication is disposed in a peripheral application device and configured to be connected with a mobile device. The system includes a wireless communication module configured to send a control command, and an RF switching circuit configured to be switched to a low or normal power mode according to the control command. Under the low power mode, a signal attenuation unit of the RF switching circuit attenuates a frequency of a transmission signal emitted from the wireless communication module to generate an output signal. Under the normal power mode, the signal attenuation unit maintains the frequency of the transmission signal. The signal frequency is allowed to be attenuated during an authentication phase to thereby achieve near field communication, and an original wireless transmission mechanism is allowed to be used after authentication is completed so as to perform operation of the peripheral application device.

Abstract: A power transmission device includes a first circuit board, a conductive base, a connection element, a second circuit board, and a fixing element. The conductive base is fixed on the first circuit board. The connection element is disposed on the conductive base. The second circuit board is fixed on the connection element. The fixing element is disposed on the second circuit board, and connected to the conductive base by penetrating through the second circuit board and the connection element. The first circuit board is electrically connected to the second circuit board via the conductive base and the connection element.

Abstract: A precision bipolar digital-to-analog converter (DAC) that provides a bipolar current output having a substantially fixed zero center point is provided. The DAC includes digital-to-analog converter circuitry configured to provide, responsive to a reference signal indicative of the digital data, a first analog current signal having a first potential and a second analog current signal having a second potential, subtractor circuitry configured to provide a bipolar current signal by subtracting the second analog current signal from the first analog current signal, the bipolar current signal having a zero center point, and first control circuitry electrically coupled to the subtractor circuitry and to the digital-to-analog converter circuitry, and configured to modify the second potential so that the second potential equals the first potential.

Abstract: A method of forming a solar cell structure is provided, which includes forming a metal electrode on a substrate, forming an absorber layer on the metal electrode, and forming a buffer layer on the absorber layer. The method also forms a titanium oxide layer on the buffer layer, wherein a thickness of the titanium oxide layer is greater than 0 and less than 10 nm. The method further forms a transparent conductive oxide layer on the titanium oxide layer. The step of forming the titanium oxide layer is atomic layer deposition (ALD) performed at a temperature of 100° C. to 180° C. with a precursor of titanium tetraisopropoxide.