Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: The present invention discloses a silibinin nanoparticle comprising the compound silibinin and a hydrophilic polymer. Moreover, the silibinin nanoparticle is in form of spherical structure with a particle size of 50 to 200 nm. The present invention also discloses a use of the silibinin nanoparticle to suppress hepatitis C virus infection and a method of treating hepatitis C, by administering the silibinin nanoparticle to a subject in need.

Abstract: The present invention relates to a filter device, the filter device includes a housing provided with a through-hole; and a filter structure includes a signal line; a wave filter connected to the signal line, the size of the periphery of the wave filter smaller than the diameter of the through-hole; a connecter connected to one end of the signal line and connected electrically with the wave filter; wherein the filter structure is arranged from the outside of the housing through the through-hole correspondingly, so that the signal line and the wave filter are arranged at the inside of the housing and the connecter is fixed at the through-hole. Hence, the filter structure is locked and fixed optionally from the outside or from the inside of the housing to increase the convenience of the whole assembly.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: A precision bipolar digital-to-analog converter (DAC) that provides a bipolar current output having a substantially fixed zero center point is provided. The DAC includes digital-to-analog converter circuitry configured to provide, responsive to a reference signal indicative of the digital data, a first analog current signal having a first potential and a second analog current signal having a second potential, subtractor circuitry configured to provide a bipolar current signal by subtracting the second analog current signal from the first analog current signal, the bipolar current signal having a zero center point, and first control circuitry electrically coupled to the subtractor circuitry and to the digital-to-analog converter circuitry, and configured to modify the second potential so that the second potential equals the first potential.

Abstract: A method for shielding an electrical signal without substantially degrading the system speed or substantially increasing the bulk of the system is provided. The method includes applying a first signal to a conductor coupled to the electrode, applying a second signal to a shield substantially surrounding the conductor, blocking electrical interference to the first signal, and increasing an effective impedance on the electrode coupled to the conductor. The second signal may be a buffered and compensated version of the first signal.

Abstract: A method for plating electrodes includes contacting a substrate with an electrolyte, the substrate comprising a plurality of working electrodes, applying an electric potential to one or more working electrodes of the plurality of working electrodes, monitoring a separate current through each of the one or more working electrodes of the plurality of working electrodes, and in response to determining that a first current through a first electrode of the plurality of working electrodes has reached a predetermined value, interrupting the first current through the first working electrode.

Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: An electronic device with camera functions includes a housing and a camera module. The housing has a first opening and a second opening. The first opening is disposed on a display surface of the housing, and the second opening is disposed on a rear surface of the housing. The camera module is located between the first opening and the second opening. Therefore, a user can take a photograph for an object by the display surface or the rear surface of the electronic device facing toward the object.

Abstract: A method of manufacturing a semiconductor device, and the method includes forming a stack of a work function layer, a blocking structure, and a metal cap layer sequentially on a substrate. The forming of the blocking structure includes sequentially depositing at least a metal diffusion prevention layer over the work function layer and an electrical performance enhancement layer over the metal diffusion prevention layer before forming the metal cap layer. The electrical performance enhancement layer includes a TiN layer having a Ti/N ratio greater than 1.

Abstract: A method of filling gaps between gates with doped flowable pre-metal dielectric (PMD) and the resulting device are disclosed. Embodiments include forming at least two dummy gates on a substrate, each dummy gate being surrounded by spacers; filling a gap between adjacent spacers of the at least two dummy gates with a flowable PMD; implanting a dopant in the flowable PMD; and annealing the flowable PMD. Doping the flowable PMD prevents erosion of the PMD, thereby providing a voidless gap-fill.

Abstract: An electronic device with camera functions includes a housing and a camera module. The housing has a first opening and a second opening. The first opening is disposed on a display surface of the housing, and the second opening is disposed on a rear surface of the housing. The camera module is located between the first opening and the second opening. Therefore, a user can take a photograph for an object by the display surface or the rear surface of the electronic device facing toward the object.

Abstract: A suitcase includes a main body and a retractable handle assembly mounted on the main body. The handle assembly includes two outer pipes and at least two inner pipes retractably mounted in the outer pipes respectively. Each of the inner pipes and the outer pipes of the handle assembly is made of a plastic pipe which is formed by a primary material and an auxiliary material. The primary material and the auxiliary material are initially mixed and fused, and are then extruded and molded to form the plastic pipe of each of the inner pipes and the outer pipes of the handle assembly. The primary material includes polycarbonate (PC) or polyoxymethylene (POM). The auxiliary material includes fiber. The fiber of the auxiliary material includes glass fiber or carbon fiber.

Abstract: A method of manufacturing a semiconductor device, and the method includes forming a stack of a work function layer, a blocking structure, and a metal cap layer sequentially on a substrate. The forming of the blocking structure includes sequentially depositing at least a metal diffusion prevention layer over the work function layer and an electrical performance enhancement layer over the metal diffusion prevention layer before forming the metal cap layer. The electrical performance enhancement layer includes a TiN layer having a Ti/N ratio greater than 1.

Abstract: A semiconductor device includes a blocking structure between a metal layer and at least one underlying layer. The blocking structure has a first layer configured for preventing diffusion of metal from the metal layer into the at least one underlying layer, and a second layer configured for enhancing electrical performance of the semiconductor device.

Abstract: A structure and method for replacement metal gate technology is provided for use in conjunction with semiconductor fins or other devices. An opening is formed in a dielectric by removing a sacrificial gate material such as polysilicon. The surfaces of the semiconductor fin within which a transistor channel is formed, are exposed in the opening. A replacement metal gate is formed by forming a diffusion barrier layer within the opening and over a gate dielectric material, the diffusion barrier layer formation advantageously followed by an in-situ plasma treatment operation. The treatment operation utilizes at least one of argon and hydrogen and cures surface defects in the diffusion barrier layer enabling the diffusion barrier layer to be formed to a lesser thickness. The treatment operation decreases resistivity, densifies and alters the atomic ratio of the diffusion barrier layer, and is followed by metal deposition.

Abstract: The present invention relates to a filter device, the filter device includes a housing provided with a through-hole; and a filter structure includes a signal line; a wave filter connected to the signal line, the size of the periphery of the wave filter smaller than the diameter of the through-hole; a connecter connected to one end of the signal line and connected electrically with the wave filter; wherein the filter structure is arranged from the outside of the housing through the through-hole correspondingly, so that the signal line and the wave filter are arranged at the inside of the housing and the connecter is fixed at the through-hole. Hence, the filter structure is locked and fixed optionally from the outside or from the inside of the housing to increase the convenience of the whole assembly.

Abstract: The present disclosure provides various methods of fabricating a semiconductor device. A method of fabricating a semiconductor device includes providing a semiconductor substrate and forming a gate structure over the substrate. The gate structure includes a first spacer and a second spacer formed apart from the first spacer. The gate structure also includes a dummy gate formed between the first and second spacers. The method also includes removing a portion of the dummy gate from the gate structure thereby forming a partial trench. Additionally, the method includes removing a portion of the first spacer and a portion of the second spacer adjacent the partial trench thereby forming a widened portion of the partial trench. In addition, the method includes removing a remaining portion of the dummy gate from the gate structure thereby forming a full trench. A high k film and a metal gate are formed in the full trench.

Abstract: A semiconductor device includes a substrate having shallow trench isolation and source/drain regions located therein, a gate stack located on the substrate between the source/drain regions, a first gate spacer on the sidewall of the gate stack, and a second gate spacer on the sidewall of the first gate spacer.