Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.

Abstract: A power transmission device includes a first circuit board, a conductive base, a connection element, a second circuit board, and a fixing element. The conductive base is fixed on the first circuit board. The connection element is disposed on the conductive base. The second circuit board is fixed on the connection element. The fixing element is disposed on the second circuit board, and connected to the conductive base by penetrating through the second circuit board and the connection element. The first circuit board is electrically connected to the second circuit board via the conductive base and the connection element.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: A wireless communication system using mimicked near field communication is disposed in a peripheral application device and configured to be connected with a mobile device. The system includes a wireless communication module configured to send a control command, and an RF switching circuit configured to be switched to a low or normal power mode according to the control command. Under the low power mode, a signal attenuation unit of the RF switching circuit attenuates a frequency of a transmission signal emitted from the wireless communication module to generate an output signal. Under the normal power mode, the signal attenuation unit maintains the frequency of the transmission signal. The signal frequency is allowed to be attenuated during an authentication phase to thereby achieve near field communication, and an original wireless transmission mechanism is allowed to be used after authentication is completed so as to perform operation of the peripheral application device.

Abstract: A power transmission device includes a first circuit board, a conductive base, a connection element, a second circuit board, and a fixing element. The conductive base is fixed on the first circuit board. The connection element is disposed on the conductive base. The second circuit board is fixed on the connection element. The fixing element is disposed on the second circuit board, and connected to the conductive base by penetrating through the second circuit board and the connection element. The first circuit board is electrically connected to the second circuit board via the conductive base and the connection element.

Abstract: A precision bipolar digital-to-analog converter (DAC) that provides a bipolar current output having a substantially fixed zero center point is provided. The DAC includes digital-to-analog converter circuitry configured to provide, responsive to a reference signal indicative of the digital data, a first analog current signal having a first potential and a second analog current signal having a second potential, subtractor circuitry configured to provide a bipolar current signal by subtracting the second analog current signal from the first analog current signal, the bipolar current signal having a zero center point, and first control circuitry electrically coupled to the subtractor circuitry and to the digital-to-analog converter circuitry, and configured to modify the second potential so that the second potential equals the first potential.

Abstract: A method of forming a solar cell structure is provided, which includes forming a metal electrode on a substrate, forming an absorber layer on the metal electrode, and forming a buffer layer on the absorber layer. The method also forms a titanium oxide layer on the buffer layer, wherein a thickness of the titanium oxide layer is greater than 0 and less than 10 nm. The method further forms a transparent conductive oxide layer on the titanium oxide layer. The step of forming the titanium oxide layer is atomic layer deposition (ALD) performed at a temperature of 100° C. to 180° C. with a precursor of titanium tetraisopropoxide.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: The present invention discloses a silibinin nanoparticle comprising the compound silibinin and a hydrophilic polymer. Moreover, the silibinin nanoparticle is in form of spherical structure with a particle size of 50 to 200 nm. The present invention also discloses a use of the silibinin nanoparticle to suppress hepatitis C virus infection and a method of treating hepatitis C, by administering the silibinin nanoparticle to a subject in need.

Abstract: The present invention relates to a filter device, the filter device includes a housing provided with a through-hole; and a filter structure includes a signal line; a wave filter connected to the signal line, the size of the periphery of the wave filter smaller than the diameter of the through-hole; a connecter connected to one end of the signal line and connected electrically with the wave filter; wherein the filter structure is arranged from the outside of the housing through the through-hole correspondingly, so that the signal line and the wave filter are arranged at the inside of the housing and the connecter is fixed at the through-hole. Hence, the filter structure is locked and fixed optionally from the outside or from the inside of the housing to increase the convenience of the whole assembly.

Abstract: A precision bipolar digital-to-analog converter (DAC) that provides a bipolar current output having a substantially fixed zero center point is provided. The DAC includes digital-to-analog converter circuitry configured to provide, responsive to a reference signal indicative of the digital data, a first analog current signal having a first potential and a second analog current signal having a second potential, subtractor circuitry configured to provide a bipolar current signal by subtracting the second analog current signal from the first analog current signal, the bipolar current signal having a zero center point, and first control circuitry electrically coupled to the subtractor circuitry and to the digital-to-analog converter circuitry, and configured to modify the second potential so that the second potential equals the first potential.

Abstract: A method for plating electrodes includes contacting a substrate with an electrolyte, the substrate comprising a plurality of working electrodes, applying an electric potential to one or more working electrodes of the plurality of working electrodes, monitoring a separate current through each of the one or more working electrodes of the plurality of working electrodes, and in response to determining that a first current through a first electrode of the plurality of working electrodes has reached a predetermined value, interrupting the first current through the first working electrode.

Abstract: A method for shielding an electrical signal without substantially degrading the system speed or substantially increasing the bulk of the system is provided. The method includes applying a first signal to a conductor coupled to the electrode, applying a second signal to a shield substantially surrounding the conductor, blocking electrical interference to the first signal, and increasing an effective impedance on the electrode coupled to the conductor. The second signal may be a buffered and compensated version of the first signal.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: A method for manufacturing high purity sulfuric acid is provided. A mixed solution subsequently undergoes a first preheating step, a second preheating step, a distilling step and an evaporating step to remove peroxide, water, oxygen and insoluble impurities, so as to obtain the first gas containing sulfur trioxide, sulfuric acid and hydrogen oxide. And then, the sulfur trioxide is absorbed by a sulfuric acid solution, thereby forming the high purity sulfuric acid.

Abstract: A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions.

Abstract: An electronic device with camera functions includes a housing and a camera module. The housing has a first opening and a second opening. The first opening is disposed on a display surface of the housing, and the second opening is disposed on a rear surface of the housing. The camera module is located between the first opening and the second opening. Therefore, a user can take a photograph for an object by the display surface or the rear surface of the electronic device facing toward the object.

Abstract: A method of manufacturing a semiconductor device, and the method includes forming a stack of a work function layer, a blocking structure, and a metal cap layer sequentially on a substrate. The forming of the blocking structure includes sequentially depositing at least a metal diffusion prevention layer over the work function layer and an electrical performance enhancement layer over the metal diffusion prevention layer before forming the metal cap layer. The electrical performance enhancement layer includes a TiN layer having a Ti/N ratio greater than 1.

Abstract: A method of filling gaps between gates with doped flowable pre-metal dielectric (PMD) and the resulting device are disclosed. Embodiments include forming at least two dummy gates on a substrate, each dummy gate being surrounded by spacers; filling a gap between adjacent spacers of the at least two dummy gates with a flowable PMD; implanting a dopant in the flowable PMD; and annealing the flowable PMD. Doping the flowable PMD prevents erosion of the PMD, thereby providing a voidless gap-fill.

Abstract: An electronic device with camera functions includes a housing and a camera module. The housing has a first opening and a second opening. The first opening is disposed on a display surface of the housing, and the second opening is disposed on a rear surface of the housing. The camera module is located between the first opening and the second opening. Therefore, a user can take a photograph for an object by the display surface or the rear surface of the electronic device facing toward the object.