Abstract: An embodiment is a structure including a first fin over a substrate, a second fin over the substrate, the second fin being adjacent the first fin, an isolation region surrounding the first fin and the second fin, a first portion of the isolation region being between the first fin and the second fin, a gate structure along sidewalls and over upper surfaces of the first fin and the second fin, the gate structure defining channel regions in the first fin and the second fin, a gate seal spacer on sidewalls of the gate structure, a first portion of the gate seal spacer being on the first portion of the isolation region between the first fin and the second fin, and a source/drain region on the first fin and the second fin adjacent the gate structure.

Abstract: A system including a constellation of satellites in Low Earth Orbit and a plurality of ground stations to enable continuous communication for other geocentric, non-geosynchronous spacecraft. Network latency, Doppler effects, and router handover time are minimized through selection of orbital parameters for the satellite constellation and locations of ground stations. A plurality of polar or near polar orbit planes is presented at equally spaced right ascension of the ascending node (RAAN), in an alternative ascending-descending pattern. Inter-satellite communication is performed in-plane to relay data to a ground station, and out-of-plane or in-plane to communicate with another satellite that is not a member of the constellation. The number and location of ground stations is selected based on the number of small satellites and orbital planes in order to maintain continuous communications.

Abstract: Some embodiments of the present disclosure provide a gas sensor in an IOT. The gas sensor includes a substrate, a conductor disposed above the substrate, and a sensing film disposed over the conductor. The conductor has a top-view pattern including a plurality of openings, a minimal dimension of the opening being less than about 4 micrometer; and a perimeter enclosing the opening. Some embodiments of the present disclosure provide a method of manufacturing a gas sensor. The method includes receiving a substrate; forming a conductor, over the substrate; patterning the conductor to form a plurality of openings in the conductor by an etching operation, and forming a gas-sensing film over the conductor. The openings are arranged in a repeating pattern, and a minimal dimension of the opening being about 4 micrometer.

Abstract: A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.

Abstract: A time-reversal indoor detection system and method are provided. The system includes an anchor node device, an access point (AP) device, and a first electronic device. The first wireless communication circuit of the anchor node device is configured to send a probe signal, a third wireless communication circuit of the access point device is configured to receive the probe signal, a processor is configured to obtain a current CSI from the probe signal, and to compare the current CSI to a preset CSI, and when a first CSI included in the preset CSI is matched to the current CSI, a second wireless communication circuit of the anchor node device is configured to activate at least one function of a first electronic device through a second communication protocol.

Abstract: An embodiment is MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

Abstract: A method for forming a fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a substrate and a first fin structure and a second fin structure extending above the substrate. The FinFET device structure also includes a first transistor formed on the first fin structure and a second transistor formed on the second fin structure. The FinFET device structure further includes an inter-layer dielectric (ILD) structure formed in an end-to-end gap between the first transistor and the second transistor, and the end-to-end gap has a width in a range from about 20 nm to about 40 nm.

Abstract: A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.

Abstract: A keyboard device includes a keycap, a connecting element and a base plate. The keycap includes a sliding-type hook. The connecting element includes a first frame and a second frame. A first connecting part is inserted into the sliding-type hook. The first connecting part includes a top side and a contact slant. The top side is located at a distal end of the first connecting part. The contact slant is arranged beside the top side. A junction line between the top side and the contact slant is perpendicular to a top surface of the first frame. Due to the structure of the contact slant, the contact area between the first connecting part and the sliding-type hook is reduced. Consequently, the amount of the assembling interference between the first connecting part and the sliding-type hook is reduced.

Abstract: A method for deploying and controlling a mobile operating system on a platform comprises sending a first deployment message to the platform by an administration console; establishing a first communicable connection to the platform by a mobile communication device; getting at least an image file of a mobile operating system and an image file of a first mobile application from a data center, activating the mobile operating system by the platform and executing the first mobile application; executing a remounting procedure by the administration console according to another instruction sent from the mobile communication device; wherein the remounting procedure is configured to disconnect the first communicable connection and establish a second communicable connection between the mobile communication device and the platform or another platform that the mobile operating system and a second mobile application can be executed on the platform or on said another platform.

Abstract: A semiconductor device and method of forming the same that includes forming a dielectric layer over a substrate and patterning a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate. The method can also include forming a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate. Subsequently, a conductive layer can be formed to cover the side portions and the bottom portion of the contact region and the conductive layer can be annealed to form a silicide region in the substrate beneath the bottom portion of the contact region, and the conductive layer can then be selectively removed on the side portions of the contact region.

Abstract: An in-vehicle radar detection system includes a first radar module and a second radar module separately mounted on a lateral of a vehicle. The first radar module gives a first radar signal that defines a first detection range. The second radar module gives a second radar signal that defines a second detection range. The first radar module and the second radar module give a first radar signal and a second radar signal toward each other, respectively, so that the first detection range and the second detection range fully cover the lateral of the vehicle, thereby providing full detection without any dead spaces.

Abstract: A method includes bonding an electronic die to a photonic die. The photonic die includes an opening. The method further includes attaching an adapter onto the photonic die, with a portion of the adapter being at a same level as a portion of the electronic die, forming a through-hole penetrating through the adapter, with the through-hole being aligned to the opening, and attaching an optical device to the adapter. The optical device is configured to emit a light into the photonic die or receive a light from the photonic die.

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of semiconductor fins, a gate stack and an epitaxy structure. The semiconductor fins are present on the semiconductor substrate. The semiconductor fins respectively include recesses therein. The gate stack is present on portions of the semiconductor fins that are adjacent to the recesses. The epitaxy structure is present across the recesses of the semiconductor fins. The epitaxy structure includes a plurality of corners and at least one groove present between the corners, and the groove has a curvature radius greater than that of at least one of the corners.

Abstract: A digital imaging device including a sensor array, an analog front end and a digital back end. The sensor array is configured to output black pixel data and normal pixel data. The analog front end is configured to amplify the black pixel data and the normal pixel data with a gain, and calibrate the amplified black pixel data and the amplified normal pixel data with a calibration value. The digital back end is configured to digitize the amplified and calibrated black pixel data, calculate a data offset according to digital black pixel data, determine a dynamic adjust scale, calculate the calibration value according to the gain, the data offset and the dynamic adjust scale, and adjust the gain according to the dynamic adjust scale.

Abstract: A head mounted device for a helmet includes a connection module, a flexible bracket, a power supply seat and a function module. While the flexible bracket is moved relative to the connection module, a position of the power supply seat relative to the helmet is adjusted. While the function module is moved relative to the power supply seat, an orientation of the function unit is adjusted.

Abstract: The present disclosure provides a CMOS MEMS device. The CMOS MEMS device includes a first substrate, a second substrate, a first polysilicon and a second polysilicon. The second substrate includes a movable part and is located over the first substrate. The first polysilicon penetrates the second substrate and is adjacent to a first side of the movable part of the second substrate. The second polysilicon penetrates the second substrate and is adjacent to a second side of the movable part of the second substrate.

Abstract: A display control method includes splitting an image signal into a plurality of input signal sets, generating a first color reformed data, a second color reformed data, a third color reformed data and a fourth color reformed data according to each input signal set, outputting the first color reformed data, the second color reformed data and the third color reformed data when a plurality of pixels corresponding to one input signal set is located at an odd row, and outputting the second color reformed data, the third color reformed data and the fourth color reformed data when the plurality of pixels corresponding to one input signal set is located at an even row. Each input signal set includes a plurality of input signals that correspond to a plurality of adjacent pixels.

Abstract: A method for forming a micro-electro mechanical system (MEMS) device is provided. The method includes forming a first dielectric layer over a semiconductor layer and forming a blocking layer over the first dielectric layer. The method also includes bonding a CMOS substrate with the blocking layer, and the CMOS substrate includes a second dielectric layer, and the blocking layer is configured to block gas coming from the second dielectric layer. The method further includes partially removing the first dielectric layer to form a cavity between the semiconductor layer and the blocking layer. A portion of the semiconductor layer above the cavity becomes a movable element. In addition, the method includes sealing the cavity such that a closed chamber is formed to surround the movable element.

Abstract: The present invention provides a key structure, including: a key pedestal, a key support shaft, a keycap, a rotating member, and an elastic element. The key pedestal is provided with a sleeve structure, a press member of the key support shaft is disposed in the sleeve structure, and the rotating member and the elastic element are disposed in the sleeve structure and located below the press member. When the keycap is pressed by an external force, the press member presses on the rotating member to drive the rotating member to rotate so as to generate a sound.