Abstract: A roll-off parameter determining module disposed at a receiving terminal is provided. The receiving terminal receives first roll-off information of a first frame and second roll-off information of a second frame. The first frame is adjacent to the second frame. The module for determining a roll-off parameter includes: a register unit; a first determining unit, determining whether one of the first roll-off information and the second roll-off information includes a first data type, and generating a first roll-off parameter indicator; a second determining unit, determining whether one of the first roll-off information and the second roll-off information includes a second data type and outputting a second roll-off parameter indicator; and a look-up table (LUT) unit, looking up an LUT according to the first roll-off parameter indicator and a second roll-off parameter indicator to output a roll-off parameter.

Abstract: A method for accessing a physical region page (PRP) list includes obtaining a PRP address of a PRP list, in which the PRP address has M bits; performing operation to the first N bits of the PRP address and the N+1 th to Mth bits of the PRP address respectively to obtain a page base address if the PRP address is within a page boundary; and performing operation to the first N bits of the PRP address and the N+1 th to Mth bits of the PRP address respectively to obtain next PRP address pointer if the PRP address reaches the page boundary. N is an integer, and M is an integer larger than N.

Abstract: A communication device for performing an access control comprises at least one storage device and at least one processing circuit coupled to the at least one storage device. The at least one storage device stores, and the at least one processing circuit is configured to execute instructions of: detecting an access attempt; obtaining an access category corresponding to the access attempt; and performing an access barring check corresponding to the access attempt according to the access category and at least one access barring parameter.

Abstract: A light emitting device driver circuit includes: a power conversion circuit, an error amplifier circuit, a sample-and-hold circuit, a load current generation circuit and a feed-forward capacitor. When the light emitting device driver circuit is in a disable phase, the sample-and-hold circuit connects a feedback signal with a second reference voltage and the sample-and-hold circuit disconnects the feedback signal from a load node, whereby the feed-forward capacitor samples a sample voltage and holds it after the disable phase transits to an enable phase. In the enable phase, the sample-and-hold circuit disconnects the feedback signal from the second reference voltage and the sample-and-hold circuit connects the feedback signal with the load node, so that during a predetermined period following the transition, there is a sufficient difference between two input terminals of the error amplifier circuit so that the load current is raised to a desired current level within the predetermined period.

Abstract: The disclosure is directed to a data rate modification method and related apparatuses using the same method. According to one of the exemplary embodiment, the disclosure is directed to a data rate control method implemented by a user equipment, the method would include not limited to: transmitting a connection establishment message which comprises an identification (ID) of the UE and a network ID; receiving a data rate configuration comprising a first data rate class ID and a plurality of network data rates which is associated with the network ID as each network data rate is associated with a different data rate class ID; and setting a first data rate based on the first data rate class ID to communicate with a core network.

Abstract: A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.

Abstract: A semiconductor device includes a first substrate, a second substrate bonded to the first substrate from a first surface of the second substrate, a third substrate bonded to the second substrate from a second surface of the second substrate, a cavity defined by the first substrate, the second substrate and the third substrate; and a viewer window provided in the third substrate and aligned with the cavity; wherein the inside of the cavity is observed through the viewer window.

Abstract: A device management method for use in a cloud system including a remote device, a mobile device and a cloud server is provided. The method includes the steps of: using, by the mobile device and the remote device, a same login information to log in the cloud server; sending, by the remote device, a push notification message to the mobile device through the cloud server when detecting that a first device is connected to a connection port, wherein the push notification message includes first identification information corresponding to the first device; and in response to receiving the push notification message, identifying, by the mobile device, the first device according to the first identification information to activate a respective application so as to perform data transmission with the first device through the respective application.

Abstract: The disclosure is related to an RF signal processing apparatus. The apparatus includes a processor and a buffer memory circuit. The apparatus includes a host interface for connecting with a host and an RF circuit for transmitting and receiving RF signals. The processor processes the RF signals to or from the RF circuit. The processor converts the received RF signals into data, or converts the data into the RF signals to be transmitted. The buffer memory circuit has a controller and two buffer memories. This memory architecture allows a system to assign a task to a first buffer memory and another task to a second buffer memory without restricting that the conventional buffer memory is limited to doing one task at a time. This memory architecture can solve inefficiency problems due to insufficient data transmission since the conventional buffer memory cannot be filled within a limited time period.

Abstract: A method for browsing virtual reality (VR) webpage content is provided. The browsing method includes: identifying a device information of a VR helmet by a native application; sending out a notification message by a first browser when it is detected that a VR webpage is browsed; retrieving a webpage information corresponding to the VR webpage and providing the webpage information to the native application by an extension component of the first browser in response to the notification message; determining, by the native application, whether the first browser supports the VR helmet to display a VR content of the VR webpage according to the device information; opening the VR webpage through a second browser, which supports the VR helmet to display the VR content, by the native application according to the webpage information when it is determined that the first browser does not support the VR helmet.

Abstract: In some embodiments, a field effect transistor (FET) structure comprises a body structure, dielectric structures, a gate structure and a source or drain region. The gate structure is formed over the body structure. The source or drain region is embedded in the body structure beside the gate structure, and abuts and is extended beyond the dielectric structure. The source or drain region contains stressor material with a lattice constant different from that of the body structure. The source or drain region comprises a first region formed above a first level at a top of the dielectric structures and a second region that comprises downward tapered side walls formed under the first level and abutting the corresponding dielectric structures.

Abstract: An antenna system with a bridged ground plane includes a printed circuit board, a first ground plane, a bridge, an antenna radiating element, an antenna connection, and at least one electronic component. The first ground plane is coupled to a first face of the printed circuit board. The bridge couples the first ground plane to the second ground plane. The antenna radiating element is coupled to the second ground plane via the antenna connection. The electronic component or components are coupled to a second face of the printed circuit board.

Abstract: A grinding disk and a method of manufacturing the same are provided. The grinding disk includes a graphite base and a silicon carbide film, the silicon carbide film covering the graphite base, and the silicon carbide film has a surface grain size of 5 ?m to 80 ?m. By a hot-wall chemical vapor deposition system, a highly dense silicon carbide film is formed on a surface of the graphite base. The grinding disk may replace a conventional metallographic grinding and polishing disk, and is improved in characteristics such as hydrophobicity and abrasion resistance.

Abstract: A smart motion detection device with a determining method includes a memory, a processor, and a sensor array coupled to the memory and the processor. An image captured by the sensor array is processed by the processor. The sensor array is adapted to pre-store the image into the memory when the processor is operated in the sleep mode, and the pre-stored image is transmitted to the processor when the processor is operated in the wakeup mode. The sensor array includes a comparator adapted to generate an alarm signal for switching the processor from the sleep mode to the wakeup mode in accordance with a comparison result of the pre-stored image. The determining method includes the processor analyzing images captured by the sensor array when the sensor array is activated to capture the images, and the processor analyzing images pre-stored inside the memory when the sensor array is not activated.

Abstract: A heterogeneous radio access network system includes a mobile device and a first base station operated in a first wireless access network. The mobile device is wireless communicated with the first base station. One of the mobile device and the first base station sends a traffic steering initial message to request a traffic steering operation, the traffic steering initial message including a plurality of traffic flows. The other one of the mobile device and the first base station decides whether to accept or reject the traffic steering initial message. If the other one of the mobile device and the first base station accepts the traffic steering initial message, the mobile device performs a selective traffic steering, wherein the selective traffic steering comprises traffic flow(s), and the traffic flow(s) in the selective traffic steering are selected among the traffic flows of the traffic steering initial message.

Abstract: The present disclosure relates generally to techniques for forming a continuous adhesion layer for a contact plug. A method includes forming an opening through a dielectric layer to an active area on a substrate. The method includes performing a first plasma treatment along a sidewall of the opening. The method includes performing an atomic layer deposition (ALD) process to form a metal nitride layer along the sidewall of the opening. The ALD process includes a plurality of cycles. Each cycle includes flowing a precursor to form a metal monolayer along the sidewall and performing a second plasma treatment to treat the metal monolayer with nitrogen. The method includes depositing a conductive material on the metal nitride layer in the opening to form a conductive feature.

Abstract: A touch panel includes a substrate, a plurality of first electrode series, and a plurality of second electrode series. The substrate has a first surface. The first electrode series are disposed on the first surface. Each of the first electrode series extends along a first direction and includes a plurality of first electrodes. The second electrode series are disposed on the first surface. Each of the second electrode series extends along a second direction and includes a plurality of second electrodes.

Abstract: A casing structure including a first housing, a glue layer, and a second housing is provided. The first housing has a first inner edge. The glue layer is disposed at the first inner edge. The second housing has a second inner edge. The first housing is assembled to the second housing, and the first inner edge is aligned with the second inner edge. The glue layer abuts against the second inner edge so as to combine the first housing with the second housing. A gap formed between the glue layer and a part of the second inner edge is defined as a glue overflow buffer area.

Abstract: Disclosed are a nailing device and an adjustable nailing depth module used in a gun body of the nailing device. The gun body has a muzzle and a safety device capable of moving reciprocally with respect to the muzzle. The adjustable nailing depth module includes a fixed rod and an adjusting shaft. The fixed rod and muzzle are parallelly fixed to the gun body and extended to a length. The fixed rod has an end section away from the gun body. The adjusting shaft and the end section of the fixed rod are coupled to each other by a screw structure. The adjusting shaft is corresponsive to the safety device. The adjusting shaft can move away from or close to the safety device by the screw structure. The safety device is blocked by the adjusting shaft to restrict the distance of pressing the safety device downwardly towards the muzzle.

Abstract: A method for manufacturing a semiconductor device includes forming a gate stack over a semiconductor fin such that the gate stack exposes the semiconductor fin. The semiconductor fin exposed by the gate stack is recessed. An epitaxy structure is epitaxially grown on a recessed portion of the semiconductor fin, and the epitaxy structure is etched such that the epitaxy structure has a curved top.