Abstract: A semiconductor structure and a method of fabricating the semiconductor structure are provided. The semiconductor structure includes a substrate; a metal gate structure on the substrate; and a spacer next to the metal gate structure having a skirting part extending into the metal gate structure and contacting the substrate. The metal gate structure includes a high-k dielectric layer and a metal gate electrode on the high-k dielectric layer.

Abstract: A semiconductor device including a conductive element and an interface surface fabricated atop the conductive element, and a method for fabricating such a device are described. An exemplary device includes a substrate having a conductive element and a metal layer fabricated atop the conductive element. An oxide layer is fabricated atop the metal layer, thus forming an interface surface. During polishing (e.g., planarization), in which an upper portion of the interface surface is removed, the presence of the interface surface greatly reduces the loading on the conductive element. A second substrate fabricated using the same process may be stacked atop the first substrate and bonded using a hybrid bonding process.

Abstract: A vacuum sealed MEMS and CMOS package and a process for making the same may include a capping wafer having a surface with a plurality of first cavities, a first device having a first surface with a second plurality of second cavities, a hermetic seal between the first surface of the first device and the surface of the capping wafer, and a second device having a first surface bonded to a second surface of the first device. The second device is a CMOS device with conductive through vias connecting the first device to a second surface of the second device, and conductive bumps on the second surface of the second device. Conductive bumps connect to the conductive through vias and wherein a plurality of conductive bumps connect to the second device. The hermetic seal forms a plurality of micro chambers between the capping wafer and the first device.

Abstract: Processes for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices are provided. In some embodiments, the MEMS devices are formed on a sacrificial substrate or wafer, the sacrificial substrate or wafer is bonded to a CMOS die or wafer, and the sacrificial substrate or wafer is removed. In other embodiments, the MEMS devices are formed over a sacrificial region of a CMOS die or wafer and the sacrificial region is subsequently removed. Integrated circuit (ICs) resulting from the processes are also provided.

Abstract: A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.

Abstract: The invention provides a remote control system, including a cloud server, a first device and a portable electronic device. The first device includes a transmission interface for connecting to a second device. The portable electronic device sets up a transmission path to connect with the first device via the cloud server. The first device transmits type information including a type of the transmission interface to the portable electronic device through the transmission path. The portable electronic device encodes original data based on the type information to generate encoded data conforming to the transmission interface, and transmits the encoded data to the first device through the transmission path. The first device transmits the encoded data to the second device through the transmission interface, so as to control the second device.

Abstract: A MEMS device is described. The device includes a micro-electro-mechanical systems (MEMS) substrate including a first bonding layer, a semiconductor substrate including a second bonding layer, and a cap including a third bonding layer, the cap coupled to the semiconductor substrate by bonding the second bonding layer to the third bonding layer. The first bonding layer includes silicon, the semiconductor substrate is electrically coupled to the MEMS substrate by bonding the first bonding layer to the second bonding layer, and the MEMS substrate is hermetically sealed between the cap and the semiconductor substrate.

Abstract: The present disclosure illustrates a bidirectional wireless charging device. The bidirectional wireless charging device comprises a transceiver chip which is configured to receive a switch signal. The transceiver chip comprises a power stage circuit and a control module. The power stage circuit is coupled to a coil, and the control module is coupled to the power stage circuit. The power stage circuit is configured to output a voltage to the coil, or to receive an induced voltage from the coil. The control module is configured to control the transceiver chip to enter a power mode or a charging mode based upon the switch signal. When the transceiver chip enters the power mode, the transceiver chip provides the voltage to the coil. When the transceiver chip enters the charging mode, the transceiver chip receives the induced voltage from the coil and charges a power storage unit.

Abstract: A dust-proof safety hook contains: a body, a connection shaft, a returning element, a housing sleeve, a resilient element, a rotary sheath, and a positioning bolt. The body includes an accommodation space, an opening, a first segment, and a second segment. The connection shaft includes a first part and a second part, the returning element is mounted between the body and the connection shaft. The housing sleeve includes a slot which has a limiting portion and two notches. The resilient element is fitted with the connection shaft, and the rotary sheath includes a through orifice and a cut. The positioning bolt is inserted into the through orifice of the rotary sheath and the limiting portion of the slot of the housing sleeve, such that the rotary sheath moves along the slot of the housing sleeve by way of the positioning bolt.

Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

Abstract: The present invention provides a pharmaceutical composition for prevention and/or treatment of diseases induced by viruses of genus coronavirus and/or genus rotavirus. The pharmaceutical composition includes the following components by weight percent: 0.5-100% of taurine, 0-85% of a vitamin complex, and 0-15% of a flavoring agent.

Abstract: A method of service level traffic differentiation at a radio access network, a wireless network system and a radio access network (RAN) access node are provided. The method of service level traffic differentiation at the radio access network includes the following steps: A core network transmits a data flow information including a flow ID to a RAN access node via a user plane packet. The RAN access node sets up a data connection to a user equipment according to the data flow information.

Abstract: A method of service level differentiation at a radio access network, a wireless network system and a radio access network (RAN) access node are provided. The method of service level traffic differentiation at the radio access network includes the following steps: A core network transmits a data flow information including a flow ID to a RAN access node via a user plane packet of an interface between the core network and the RAN access node. The RAN access node sets up a data connection with a user equipment according to the data flow information.

Abstract: An expenditure data system including a bonus server, a data server, a mobile communication device and a wearable device is provided. The bonus server may store the bonus point information. The data server generates special offering information according to the consumption report. The mobile communication device receives the bonus point information and the consumption report, and transmits the bonus point information and the consumption report to the bonus server and the data server, respectively. The mobile communication device also downloads the special offering information. The wearable device generates the consumption report in response to purchasing operation involving the wearable device, and generates the bonus point information according to the consumption report. The wearable device transmits the consumption report and the bonus point information to the mobile communication device, and analyzes the consumption report to generate and display an expenditure analysis.

Abstract: An electrical serially-connected control system for driving motors in series includes a control device, at least one processing device, and a transmission medium connected between the two devices for mutual communication. The control device includes a power rectifier transforming an external power, a signal converter converting each external command signal, and an integration unit connected to the rectifier and the converter for integrating the transformed power with each converted command signal to create commands. The processing device includes a voltage regulator connected to the transmission medium for stabilizing the power come from the command, a power storage module connected to the voltage regulator and each motor, a signal filter connected to the transmission medium for processing the command signal come from the command, a controller connected with the voltage regulator, the power storage module and the signal filter, and a signal generator connected to the controller.

Abstract: A non-volatile memory having memory cells is provided. A stacked gate structure has gate dielectric layer, assist gate, insulation layer, and erase gate disposed in order. The floating gate is disposed on a first sidewall of the stacked gate structure, the floating gate has a corner portion at the top portion, and erase gate covers the corner portion. The tunneling dielectric layer is disposed under the floating gate. The erase gate dielectric layer is disposed between the erase gate and the floating gate. The assist gate dielectric layer is disposed between the assist gate and the floating gate. The source region and the drain region are respectively disposed at two sides of the stacked structure and the floating gate. The control gate is disposed on the source region and the floating gate. The inter-gate dielectric layer is disposed between the control gate and the floating gate.

Abstract: The present disclosure relates to a semiconductor structure for a MEMS device. In some embodiments, the structure includes an interlayer dielectric (ILD) region positioned over a substrate. Further the structure includes an inter-metal dielectric region. The IMD region includes a passivation layer overlying a stacked structure. The stacked structure includes dielectric layers and etch stop layers that are stacked in an alternating fashion. Metal wire layers are disposed within the stacked structure of the IMD region. The structure also includes a sensing electrode electrically connected to the IMD region with an electrode extension via. The structure includes a MEMS substrate comprising a MEMS device having a soft mechanical structure positioned adjacent to the sensing electrode.

Abstract: An earpiece of a headset uses a first signal and a second signal received from an in-ear microphone and an outside microphone, respectively, to enhance microphone signals. The in-ear microphone is positioned at a proximal side of the earpiece with respect to an ear canal of a user, and the outside microphone is positioned at a distal side of the earpiece with respect to the ear canal. A processing unit includes a filter, which digitally filters out in-ear noise from the first signal using the second signal as a reference to produce a de-noised signal to thereby enhance the microphone signals.

Abstract: The present invention provides use of taurine in prevention and/or treatment of diseases induced by viruses of genus coronavirus and/or genus rotavirus, for example, porcine epidemic diarrhea, porcine transmissible gastroenteritis, rotavirus diarrhea and the like.

Abstract: In some embodiments, a field effect transistor (FET) structure comprises a body structure, dielectric structures, a gate structure and a source or drain region. The gate structure is formed over the body structure. The source or drain region is embedded in the body structure beside the gate structure, and abuts and is extended beyond the dielectric structure. The source or drain region contains stressor material with a lattice constant different from that of the body structure. The source or drain region comprises a first region formed above a first level at a top of the dielectric structures and a second region that comprises downward tapered side walls formed under the first level and abutting the corresponding dielectric structures.