Abstract: A mounting system for window blinds is provided. The mounting system provides components that can be used to mount a window blind or shade. The components of the mounting system include flex brackets, mounting clips, railing devices, adjustable arms, spacers, etc. These components can be provided in different combinations to mount different types of blinds or shades to walls or ceilings, regardless of whether the wall to be mounted to is above, behind, or to the sides of the window blind.

Abstract: An electronic device includes a bond wire with a first end bonded by a ball bond to a planar side of a first conductive plate, and a second end bonded by a stitch bond to a conductive stud bump at an angle greater than or equal to 60 degrees. A wirebonding method includes bonding the first end of the conductive bond wire to the first conductive plate includes forming a ball bond to join the first end of the conductive bond wire to a planar side of the first conductive plate by a ball bond, and bonding the second end of the conductive bond wire to the conductive stud bump includes forming a stitch bond to join the second end of the conductive bond wire to the conductive stud bump.

Abstract: An electronic device includes a monitor stand, a hinge mechanism, and an operation element. The hinge mechanism includes a back plate, a speed reduction assembly, and a friction assembly. The back plate is fixed to the monitor stand. The speed reduction assembly includes an input plate and a speed reduction member. The speed reduction member is arranged on the input plate. The friction assembly is arranged between the back plate and the input plate. The operation element is connected to the speed reduction member. A rotation center of the operation element coincides with an axis of the back plate and the speed reduction member are coaxially arranged.

Abstract: The present disclosure relates to utilizing a firmware configuration system to efficiently update a firmware profile configuration of computing devices (e.g., host devices in a datacenter). For example, the firmware configuration system facilitates updating the firmware profile configuration, such as for a Unified Extensible Firmware Interface (UEFI) profile and/or a Basic Input/Output System (BIOS), without needing to develop, deploy, and install a new BIOS. More specifically, the firmware configuration system updates (e.g., via a baseband management controller) firmware profile configurations by modifying a profile configuration table in flash memory (i.e., on an SPI flash-based chip) of a BIOS with a firmware profile configuration update patch and without affecting other parts of the BIOS.

Abstract: A memory operation method, comprising: when a first super block of a memory device is a open block (or in programming state), obtaining a first read count of one of a plurality of first memory blocks in the first super block, wherein the first read count is a number of times that data of one of the first memory blocks is read out; determining whether the first read count is larger than a first threshold; and when the first read count is larger than the first threshold, moving a part of the data in the first super block to a safe area in the memory device, wherein the part of the data comprises data in the first memory block.

Abstract: The disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes a base pattern including a channel region and a drain region, a first semiconductor layer on the channel region of the base pattern, and a gate structure on the first semiconductor layer. The gate structure includes a first stack disposed on the first semiconductor layer and a second stack disposed on the first stack. The first stack includes a first sidewall adjacent to the drain region and a second sidewall opposite to the first sidewall in a first direction parallel to a top surface of the base pattern. The first sidewall is at a first distance from the second stack in the first direction, and the second sidewall is at a second distance from the second stack in the first direction. The first distance is greater than the second distance.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A media docking device includes an input circuit, an output circuit and a processing circuit. The input circuit is electrically connected to a media source device for receiving media data. The output circuit is electrically connected to a media play device. The processing circuit is electrically connected to the input circuit and the output circuit. The processing circuit determines if a verification procedure is passed. If the verification procedure is passed, the processing circuit transfers the media data to the media play device. If the verification procedure is not passed, the processing circuit limits a transmission of the media data, such that the media data will not be completely played by the media play device.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A media docking device includes an input module, an output module and a processing module. The input module is electrically connected to a media source device for receiving media data. The output module is electrically connected to a media play device. The processing module determines if an instruction is received from the media source device or a remote device. If the instruction is not received, the processing module transfers the media data to the output module to transmit to the media play device. If the instruction is received, the processing module limits a transmission of the media data according to the instruction, such that the media data will not be completely played by the media play device.

Abstract: A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: An example computing device includes a first housing portion, a second housing portion moveably connected to the first housing portion, a link to selectively secure the second housing portion to the first housing portion to inhibit movement of the second housing portion relative to the first housing portion, and a shape-memory alloy element to release the link to allow the second housing portion to move relative to the first housing portion.

Abstract: This disclosure is directed to solutions of detecting and classifying wafer defects using machine learning techniques. The solutions take only one coarse resolution digital microscope image of a target wafer, and use machine learning techniques to process the coarse SEM image to review and classify a defect on the target wafer. Because only one coarse SEM image of the wafer is needed, the defect review and classification throughput and efficiency are improved. Further, the techniques are not distractive and may be integrated with other defect detecting and classification techniques.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

Abstract: Disclosed is a modified carbonaceous material, which includes hexagonal carbon networks in a layered stacking structure and acidic functional groups bonded to the hexagonal carbon networks and mainly existing at edges of the layered carbonaceous structure. Accordingly, the close proximity of acid moiety at the edges can resemble the center of hydrolysis enzymes, resulting in enhancement of hydrolytic efficiency. Additionally, the acid-functionalized carbonaceous material can also be applied in the capture and storage of carbon dioxide due to its unexpectedly higher capacity for CO2 molecular.

Abstract: A physiological detection device includes system including a first array PPG detector, a second array PPG detector, a display and a processing unit. The first array PPG detector is configured to generate a plurality of first PPG signals. The second array PPG detector is configured to generate a plurality of second PPG signals. The display is configured to show a detected result of the physiological detection system. The processing unit is configured to convert the plurality of first PPG signals and the plurality of second PPG signals to a first 3D energy distribution and a second 3D energy distribution, respectively, and control the display to show an alert message.

Abstract: A peak cover for lift cord and tilt ladder includes a limiter having an arcuate cover. A fixed engagement plate is disposed at an upper end of a left side of the arcuate cover. Two stop walls are disposed on two sides of a lower end of the left side of the arcuate cover. Two grooves are formed inside the stop walls. Two annular ribs of a cord winding reel are engaged in the grooves, whereby the cord winding reel is freely rotatable. A movable engagement plate is disposed at an upper end of a right side of the arcuate cover. Four raised columns are formed on an upper end of the arcuate cover. The arcuate cover of the limiter is capped on the cord winding reel. The fixed engagement plate and the movable engagement plate of the arcuate cover are engaged with the annular ribs on two sides of the cord winding reel.