Abstract: A semiconductor package includes a conductive pillar and a solder. The conductive pillar has a first sidewall and a second sidewall opposite to the first sidewall, wherein a height of the first sidewall is greater than a height of the second sidewall. The solder is disposed on and in direct contact with the conductive pillar, wherein the solder is hanging over the first sidewall and the second sidewall of conductive pillar.

Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.

Abstract: A double-sided aspheric diffractive multifocal lens and methods of manufacturing and design of such lenses in the field of ophthalmology. The lens can include an optic comprising an aspheric anterior surface and an aspheric posterior surface. On one of the two surfaces a plurality of concentric diffractive multifocal zones can be designed. The other surface can include a toric component. The double-sided aspheric surface design results in improvement of the modulation transfer function (MTF) of the lens-eye combination by aberration reduction and vision contrast enhancement as compared to one-sided aspheric lens. The surface having a plurality of concentric diffractive multifocal zones produces a near focus, an intermediate focus, and a distance focus.

Abstract: The disclosure provides a local stretch packaging structure, including a substrate, a flexible electronic element, a plurality of light-emitting display elements, and a packaging layer. The flexible electronic element is disposed on the substrate. These light-emitting display elements are disposed on the flexible electronic element. The packaging layer includes a packaging area and a non-packaging area. The packaging area covers the upper surface and sidewalls of these light-emitting display elements. The non-packaging area is directly covered the flexible electronic element that is not disposed with these light-emitting display elements.

Abstract: A projection device including a casing, a light source module, an optical engine module and a projection lens is provided. A front cover, a rear cover, a first side cover, a second side cover, an upper cover and a lower cover of the casing surround an accommodating space. The light source module includes a first and a second light sources, and a first and a second light source heat dissipation modules. The lower cover has a first, a second and a third air inlets. The first and the second side covers respectively have a first and a second air outlets. The first and the second light source heat dissipation modules are correspondingly disposed above the first air inlet and correspond to the first air outlet. The second and the third air inlets are respectively disposed below two sides of the projection lens and adjacent to the front cover.

Abstract: A semiconductor structure includes: an etch-stop dielectric layer overlying a substrate and including a first opening therethrough; a silicon oxide plate overlying the etch-stop dielectric layer and including a second opening therethrough; a first conductive structure including a first electrode and extending through the second opening and the first opening; a memory film contacting a top surface of the first conductive structure and including a material that provides at least two resistive states having different electrical resistivity; and a second conductive structure including a second electrode and contacting a top surface of the memory film.

Abstract: Disclosed herein are composite polypeptide. According to various embodiments, the composite polypeptide includes a parent polypeptide and a metal binding motif capable of forming a complex with a metal cation. The composite polypeptide may be conjugated with a linker unit having a plurality of functional elements to form a multi-functional molecular construct. Alternatively, multiple composite polypeptides may be conjugated to a linker unit to form a molecular construct, or a polypeptide bundle. Linker units suitable for conjugating with the composite polypeptide having the metal binding motif are also disclosed.

Abstract: A semiconductor device includes a semiconductor substrate, an isolation feature, gate lines, and a first gate structure. The isolation feature is over the semiconductor substrate and surrounding an active region of the semiconductor substrate. The gate lines extend across the active region of the semiconductor substrate. The first gate structure is over the isolation feature. The first gate structure comprises a first gate line, a second gate line, and a first bridge portion, the first and second gate lines are substantially parallel with the gate lines, and the first bridge portion connects the first gate line to the second gate line.

Abstract: Systems, apparatus, and methods are described for robotic learning and execution of skills. A robotic apparatus can include a memory, a processor, sensors, and one or more movable components (e.g., a manipulating element and/or a transport element). The processor can be operatively coupled to the memory, the movable elements, and the sensors, and configured to obtain information of an environment, including one or more objects located within the environment. In some embodiments, the processor can be configured to learn skills through demonstration, exploration, user inputs, etc. In some embodiments, the processor can be configured to execute skills and/or arbitrate between different behaviors and/or actions. In some embodiments, the processor can be configured to execute skills and/or behaviors using cached trajectories or plans. In some embodiments, the processor can be configured to execute skills requiring navigation and manipulation behaviors.

Abstract: The present invention provides a ceramic composition, comprising a primary mixture and a secondary mixture, wherein the primary mixture comprises a first primary ingredient powder and a second primary ingredient powder, and the first primary ingredient powder comprises BaTiO3, the second primary ingredient powder comprises any of SrTiO3, Ba0.95Ca0.05TiO3, BaZr0.1Ti0.9O3 or a combination thereof, and the secondary mixture comprises a rare earth oxide, a silicon oxide and an alkaline-earth metal oxide. The present invention further provides a ceramic sintered body obtained by sintering the ceramic composition, and a capacitor comprising the ceramic sintered body and a method for manufacturing the same; wherein the capacitor satisfies EIA-X8R specification, and has a high dielectric constant.

Abstract: Systems, apparatus, and methods are described for robotic learning and execution of skills. A robotic apparatus can include a memory, a processor, sensors, and one or more movable components (e.g., a manipulating element and/or a transport element). The processor is operatively coupled to the memory, the movable elements, and the sensors, and configured to obtain information of an environment, including one or more objects located within the environment. In some embodiments, the processor is configured to learn skills through demonstration, exploration, user inputs, etc. In some embodiments, the processor is configured to execute skills and/or arbitrate between different behaviors and/or actions. In some embodiments, the processor is configured to learn an environmental constraint. In some embodiments, the processor is configured to learn using a general model of a skill.

Abstract: Systems, apparatus, and methods are described for robotic learning and execution of skills. A robotic apparatus can include a memory, a processor, sensors, and one or more movable components (e.g., a manipulating element and/or a transport element). The processor can be operatively coupled to the memory, the movable elements, and the sensors, and configured to obtain information of an environment, including one or more objects located within the environment. In some embodiments, the processor can be configured to learn skills through demonstration, exploration, user inputs, etc. In some embodiments, the processor can be configured to execute skills and/or arbitrate between different behaviors and/or actions. In some embodiments, the processor can be configured to execute skills and/or behaviors using cached trajectories or plans. In some embodiments, the processor can be configured to execute skills requiring navigation and manipulation behaviors.

Abstract: A head-mounted eye tracking system including an optical combiner, an eye tracker and a signal processor is provided. The optical combiner includes an optical coupler. The eye tracker is at least partially disposed on the optical combiner and is suitable for sensing an eyeball movement of a wearer. The eye tracker includes a plurality of light-emitting devices and a plurality of sensing devices. The plurality of light-emitting devices are suitable for emitting tracking beams. The plurality of sensing devices are suitable for receiving the tracking beams reflected by the eyeball of the wearer. The signal processor is signally connected to the eye tracker.

Abstract: In an embodiment, a device includes a substrate, a first semiconductor layer that extends from the substrate, and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes silicon and the second semiconductor layer includes silicon germanium, with edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, and the second germanium concentration being less than the first germanium concentration. The device also includes a gate stack on the second semiconductor layer, lightly doped source/drain regions in the second semiconductor layer, and source and drain regions extending into the lightly doped source/drain regions.

Abstract: The invention provides a protable article device, which mainly comprises a flat, expandable sheath and a binding component. The inner surface of the sheath is flexible, with a non-slip surface with plurality grooves; it is connected to the Velcro and positioning ring of the binding component. This design enables objects to be tightly fastened inside the sheath because of the elasticity of the Velcro. The positioning ring of the sheath can be locked to a clip holder to enable easy carrying and retrieval when outdoors.

Abstract: A method for detecting defects in a near-eye display is provided. The method includes the following steps: obtaining a reference image and a DUT image according to a first image and a second image captured by a camera through a Fresnel lens when a display panel respectively displays a test-pattern image and a test-background image; performing a fast Fourier transform on the reference image and the DUT image to obtain a frequency-domain reference image and a frequency-domain DUT image; calculating an average value of pixel values above a predetermined cut-off ratio in a histogram of each first region of interest (ROI) in a filtered frequency-domain reference image as a corresponding threshold; comparing each pixel in the filtered DUT image with the corresponding threshold to generate a determination result; and building a defective-status map of the near-eye display according to the determination results.

Abstract: In an embodiment, a device includes a substrate, a first semiconductor layer that extends from the substrate, and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes silicon and the second semiconductor layer includes silicon germanium, with edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, and the second germanium concentration being less than the first germanium concentration. The device also includes a gate stack on the second semiconductor layer, lightly doped source/drain regions in the second semiconductor layer, and source and drain regions extending into the lightly doped source/drain regions.

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure, and a source/drain structure in the fin structure and adjacent to the gate structure. The source/drain structure includes: a first epitaxial layer over the fin structure, a second epitaxial layer over the first epitaxial layer, and an epitaxial capping layer over the second epitaxial layer. The semiconductor structure also includes a silicide layer formed in contact with the source/drain structure. The silicide layer has a curved bottom surface, and the curved bottom surface of the silicide layer intersects with the second epitaxial layer and the epitaxial capping layer.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin and adjacent to the gate structure; performing a wet etch process to clean the recess; treating the recess with a plasma process; and performing a dry etch process to clean the recess after the plasma process and the wet etch process.