Abstract: The present disclosure describes a method to form silicon germanium (SiGe) source/drain regions with the incorporation of a lateral etch in the epitaxial source/drain growth process. For example, the method can include forming a plurality of fins on a substrate, where each of the plurality of fins has a first width. The SiGe source/drain regions can be formed on the plurality of fins, where each SiGe source/drain region has a second width in a common direction with the first width and a height. The method can also include selectively etching—e.g., via a lateral etch—the SiGe source/drain regions to decrease the second width of the SiGe source/drain regions. By decreasing the width of the SiGe source/drain regions, electrical shorts between neighboring fins can be prevented or minimized. Further, the method can include growing an epitaxial capping layer over the Si/Ge source/drain regions.

Abstract: A mobile device holding device comprises a basement including an inner accommodation space; a document feeding path including a scanning area, the document feeding path being disposed in said accommodation space; an input tray disposed on an upstream of the document feeding path to accommodate documents to be scanned; an output tray disposed on a downstream of the document feeding path to eject scanned documents; a document feeding unit disposed in the accommodation space for transmitting documents through the document feeding path; and a device holder disposed on the basement to fix a mobile device; wherein the device holder is moved to align the mobile device with the scanning area for capturing the image within the scanning area, and ensuring that the shooting area of the mobile device is not less than the width of documents to be scanned.

Abstract: A high-speed flat cable having a better bending/folding memory and a manufacturing method thereof are provided. The high-speed flat cable includes a plurality of shielded signal units, one or more bendable composite layers, and an adhesive layer. The shielded signal units are substantially coplanar, spaced apart from each other or adjoining each other. The one or more bendable composite layers includes an inner insulating film layer, a bendable aluminum foil layer, and an outer insulating film layer. The one or more bendable composite layers composed of the inner insulating film layer, the bendable aluminum foil layer, and the outer insulating film layer increase its mechanical bending/folding property to improve the bending/folding memory. The one or more bendable composite layers allow the flat cable to be bent with ease without rebounding, thereby enhancing production efficiency.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin and adjacent to the gate structure; performing a wet etch process to clean the recess; treating the recess with a plasma process; and performing a dry etch process to clean the recess after the plasma process and the wet etch process.

Abstract: The disclosure relates to a heat dissipation module, a display device having the same, and an assembly method thereof. Place the heat dissipation structure in between the chip of the COF (chip-on-film) and the thermal-conductive supporting component, heat generated by the chip of the COF can be absorbed by the heat dissipation structure and then be transferred to the thermal-conductive supporting component through the heat dissipation structure. As a result, the temperature of the chip is decreased, and the chip is avoided from operating at high temperature to deteriorate its performance and to result in thermal deformation or any other negative effects on the nearby components.

Abstract: Techniques for a resource management advice service are provided. In some examples, resource management advice and/or instructions may be provided for use with mobile devices, mobile applications, cloud applications, and/or other web-based applications. For example a mobile client may request to perform one or more resource management operations associated with a service provider. Based at least in part on the requested operation and/or the particular service provider, advice and/or instructions for managing the resource may be provided.

Abstract: Systems, apparatus, and methods are described for robotic learning and execution of skills. A robotic apparatus can include a memory, a processor, sensors, and one or more movable components (e.g., a manipulating element and/or a transport element). The processor can be operatively coupled to the memory, the movable elements, and the sensors, and configured to obtain information of an environment, including one or more objects located within the environment. In some embodiments, the processor can be configured to learn skills through demonstration, exploration, user inputs, etc. In some embodiments, the processor can be configured to execute skills and/or arbitrate between different behaviors and/or actions. In some embodiments, the processor can be configured to learn an environmental constraint. In some embodiments, the processor can be configured to learn using a general model of a skill.

Abstract: A connector assembly configured for compact, high speed electronic systems. The assembly includes a board connector and a cable connector that may be mated by moving the cable connector in a mating direction perpendicular to a printed circuit board to which the board connector is mounted. The cable and board connectors may latch when mated and may be unlatched and unmated by pulling on a tab at a top of the cable connector in a direction opposite the mating direction. As a result, little clearance is required around the board connector to access the latching components. Such a connector may enable an electronic device with high signal integrity because the connector can be mounted close to an electronic component that processes high speed signals, providing a short, and high integrity signal paths for high speed signals.

Abstract: A connector assembly with latching provided by a rotating latch bar. The connector has a low height, with the rotating latch bar providing secure engagement between mated connectors of the connector assembly. The latch bar may be shaped to provide spring force that urges the mated connectors together. The connector assembly may be formed with a cable connector and a board connector. The low height of the board connector enables the connector to be mounted close to high speed electronic components, such as a processor, even if covered by a heat sink, as the connector may fit under the heat sink. The cable connector may be coupled, via a cable, to an I/O connector or other component remote from the high speed electronic component.

Abstract: A low-temperature co-fired microwave dielectric ceramic material includes: (a) 85 wt % to 99 wt % ceramic material comprising Mg2SiO4, Ca2SiO4, CaTiO3, and CaZrO3, wherein a weight ratio of Mg2SiO4 relative to Ca2SiO4 is of (1?x):x, a weight ratio of CaTiO3 relative to CaZrO3 is of y:z, and a weight ratio of entities of Mg2SiO4 and Ca2SiO4 relative to CaTiO3 is of (1?y?z):y, 0.2?x?0.7, 0.05?y?0.2, 0.05?z?0.4; and (b) 1 wt % to 15 wt % glass material composed of Li2O, BaO, SrO, CaO, B2O3, and SiO2.

Abstract: In an embodiment, a device includes: a substrate; a first semiconductor layer extending from the substrate, the first semiconductor layer including silicon; a second semiconductor layer on the first semiconductor layer, the second semiconductor layer including silicon germanium, edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, the second germanium concentration being less than the first germanium concentration, the edge portions of the second semiconductor layer including sides and a top surface of the second semiconductor layer; a gate stack on the second semiconductor layer; lightly doped source/drain regions in the second semiconductor layer, the lightly doped source/drain regions being adjacent the gate stack; and source and drain regions extending into the lightly doped source/drain regions.

Abstract: An energy regulation circuit is provided. A first voltage regulator adjusts an input voltage to generate an adjustment voltage. A first energy storage is charged according to the input voltage or the adjustment voltage. A first switch is coupled to the first energy storage. A second energy storage is coupled to the first switch. When the first switch is turned on, the second energy storage is coupled to the first energy storage in parallel. When the first switch is turned off, a second voltage regulator generates an operation voltage according to the voltage stored in the first energy storage. When the first switch is turned on, the second voltage regulator generates the operation voltage according to the voltages stored in the first and second energy storages. A controller operates according to the operation voltage.

Abstract: The present invention provides a device and method for inserting an IOL into an eye of a patient. The IOL injector is configured to automatically load an IOL into the injector by folding and aligning the IOL into a lens cartridge of the injector without manual manipulation of the IOL by the physician during the procedure. The injector is configured to properly orient and align the IOL within the injector and maintain proper alignment throughout delivery of the IOL to the eye of a patient and thereby ensuring that the IOL is properly positioned and oriented at a predetermined location in the eye.

Abstract: A semiconductor device includes a gate structure formed over a channel region of the semiconductor device, a source/drain region adjacent the channel region, and an electrically conductive contact layer over the source/drain region. The source/drain region includes a first epitaxial layer having a first material composition and a second epitaxial layer formed over the first epitaxial layer. The second epitaxial layer has a second material composition different from the first composition. The electrically conductive contact layer is in contact with the first and second epitaxial layers. A bottom of the electrically conductive contact layer is located below an uppermost portion of the first epitaxial layer.

Abstract: An improved structure for reducing compound semiconductor wafer distortion comprises a contact metal layer and at least one stress balance layer. The contact metal layer is formed on a bottom surface of a compound semiconductor wafer; the at least one stress balance layer is formed on a bottom surface of the contact metal layer, wherein a thermal conductivity of the at least one stress balance layer is greater than or equal to 10 W/m-K. The stress suffered by the compound semiconductor wafer is balanced by the at least one stress balance layer, so that the distortion of the compound semiconductor wafer is reduced.

Abstract: Semiconductor device structures and methods for forming the same are provided. A semiconductor device structure includes a gate structure over a semiconductor substrate. The gate structure includes a gate electrode layer and a gate dielectric layer covering a bottom surface and sidewalls of the gate electrode layer. The semiconductor device structure also includes spacer elements in contact with sidewalls of the gate structure and protruding from a top surface of the gate electrode layer. The semiconductor device structure also includes a first protection layer over the gate electrode layer and between the spacer elements. The semiconductor device structure also includes a dielectric layer over the first protection layer and between the spacer elements. A portion of the dielectric layer is between sidewalls of the spacer elements and sidewalls of the first protection layer.

Abstract: Techniques for a resource management advice service are provided. In some examples, resource management advice and/or instructions may be provided for use with mobile devices, mobile applications, cloud applications, and/or other web-based applications. For example a mobile client may request to perform one or more resource management operations associated with a service provider. Based at least in part on the requested operation and/or the particular service provider, advice and/or instructions for managing the resource may be provided.

Abstract: An electrostatic discharge (ESD) protection device including a silicon controlled rectifier and a diode string arranged along a first direction is provided. The silicon controlled rectifier includes an anode and a cathode disposed separately from each other. The anode and the cathode respectively include doped regions. The doped regions in the anode are arranged along a second direction. The doped regions in the cathode are arranged along the second direction. The first direction intersects the second direction.

Abstract: An electrostatic discharge (ESD) protection device including a silicon controlled rectifier and a diode string arranged along a first direction is provided. The silicon controlled rectifier includes an anode and a cathode disposed separately from each other. The anode and the cathode respectively include doped regions. The doped regions in the anode are arranged along a second direction. The doped regions in the cathode are arranged along the second direction. The first direction intersects the second direction.

Abstract: Techniques for a resource management advice service are provided. In some examples, resource management advice and/or instructions may be provided for use with mobile devices, mobile applications, cloud applications, and/or other web-based applications. For example a mobile client may request to perform one or more resource management operations associated with a service provider. Based at least in part on the requested operation and/or the particular service provider, advice and/or instructions for managing the resource may be provided.