Abstract: Method of controlling warning lights to enter low power mode includes steps of: setting predetermined ID Number of warning lights as starter, and remaining ID numbers as receivers; warning light set as starter receiving start command from control bus through signal line, and sending data, clock pulse, and ID information from data bus, and choosing low power mode to flash; warning lights set as receivers obtaining data, clock pulse, and ID information from data bus through signal lines, and flash mode of receivers and starter flashing in low power mode, and active switch of control circuit that executes low power mode receiving low power command sent from starter and forming conductive state, and current-reducing resistor which is electrically connected to active switch reducing passing current to predetermined ratio, so that reduced current is transmitted to receivers and then starter executes low power mode and reduces brightness of warning lights.

Abstract: Provided is a memory device including a substrate, a plurality of word-line structures, a plurality of cap structures, and a plurality of air gaps. The word-line structures are disposed on the substrate. The cap structures are respectively disposed on the word-line structures. A material of the cap structures includes a nitride. The nitride has a nitrogen concentration decreasing along a direction near to a corresponding word-line structure toward far away from the corresponding word-line structure. The air gaps are respectively disposed between the word-line structures. The air gaps are in direct contact with the word-line structures. A method of forming a memory device is also provided.

Abstract: A transistor structure includes a substrate, having a gate region and a first trench in the substate at a first side of the gate region. Further, a first gate insulating layer is disposed on a first portion of the gate region, opposite to the first trench. A second gate insulating layer is disposed on a second portion of the gate region and a first portion of the first trench abutting to the gate region, wherein the second gate insulating layer is thicker than the first gate insulating layer. A gate layer is disposed on the first and second gate insulating layers, having a downward protruding portion corresponding to the first trench. A first doped region is in the substrate at least under the first trench. A second doped region is in the substrate at a second side of the gate region.

Abstract: A method for drying a wafer at room temperature includes a cleaning step, a reacting step and a pressure releasing step. The cleaning step includes putting a processing workpiece into a cleaning solvent. The reacting step includes putting the processing workpiece along with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing a pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. A critical temperature of the supercritical fluid is below room temperature. The pressure releasing step includes releasing the pressure of the reaction chamber and discharging the supercritical fluid together with the cleaning solvent out of the reaction chamber, after completely dissolving the cleaning solvent in the supercritical fluid.

Abstract: A transistor structure includes a substrate, having a gate region and a first trench in the substrate at a first side of the gate region. Further, a first gate insulating layer is disposed on a first portion of the gate region, opposite to the first trench. A second gate insulating layer is disposed on a second portion of the gate region and a first portion of the first trench abutting to the gate region, wherein the second gate insulating layer is thicker than the first gate insulating layer. A gate layer is disposed on the first and second gate insulating layers, having a downward protruding portion corresponding to the first trench. A first doped region is in the substrate at least under the first trench. A second doped region is in the substrate at a second side of the gate region.

Abstract: A fat screening device includes a cylinder, and a sieve basket. The cylinder includes a feed inlet, an air outlet, a bottom water outlet, and an accommodating space. The accommodating space is in communication with the feed inlet, the air outlet, and the bottom water outlet. The feed inlet is configured to receive a mixture, the bottom water outlet is disposed at a bottom of the cylinder, the accommodating space is configured to accommodate water and fat resulting from stratification of the mixture, and the bottom water outlet is configured to discharge the water. The sieve basket covers the feed inlet and is arranged separately from the air outlet. The sieve basket is configured to screen the mixture to discharge the water and the fat into the accommodating space.

Abstract: An antenna element comprises one or more directors, a resonator, and a three dimensional ground assembly. Parts of the antenna element are arranged on three metal layers. A top layer has an unconnected metal bar which forms a beam director, a resonator and a top part of the ground assembly. The resonator is an integral piece substantially in the form of a loop connected to a feed line and a feed line terminal ending. The feed line terminal ending serves as the ground plane for the feed line as well as providing impedance matching from the external transceiver circuit to the resonator. The ground assembly includes a top layer ground connected to a plurality of metallized half cylindrical hole channels (or metallized via holes) which connect to a ground terminal in a bottom layer.

Abstract: A cycloid speed reducer includes a weight element, an input shaft and a cycloid disc. The weight element is disposed within an accommodation space of the cycloid disc. An eccentric part is disposed on the input shaft. Since the length of the input shaft is reduced, the overall length of the cycloid speed reducer is shortened. Moreover, the mass center of the weight element and the mass center of the eccentric part and the cycloid disc are arranged along the same axial direction. That is, the line passing through the mass center of the weight element and the mass center of the eccentric part and the cycloid disc is perpendicular to the input shaft. Consequently, the efficacy of the dynamic balance of the cycloid speed reducer is enhanced.

Abstract: A frozen food heating apparatus is disclosed, which includes a boiler body, a water tank in communication with the boiler body, and a container for containing food, a spray nozzle in communication with both the boiler body and the water tank being provided above the container, where a first solenoid valve or an electric ball valve is provided on a connection pipeline between the water tank and the spray nozzle, the spray nozzle is in communication with an upper end of the boiler body and a second solenoid valve is provided on a connection pipeline, and the water tank is in communication with the lower end of the boiler body and a third solenoid valve is provided on a connection pipeline.

Abstract: The present disclosure relates to an electronic load apparatus. An embodiment of the present disclosure includes an electronic load apparatus including: a measurement resistor, a reference circuit, a transistor, and a feedback circuit. The measurement resistor includes a first contact, a second contact, a third contact, and a fourth contact. The first contact and the second contact are located at a first end of the measurement resistor. The third contact and the fourth contact are located at a second end of the measurement resistor. A reference power (or a reference voltage) electrically connects to the reference circuit. The reference circuit and the first contact of the measurement resistor are electrically connected. The transistor includes a drain, a gate, and a source. The reference circuit and the gate of the transistor are electrically connected. One of the source and the drain of the transistor electrically connects to the second contact of the measurement resistor.

Abstract: The present disclosure discloses a portable electronic device including a primary display panel, a keyboard module, a secondary display panel, and a support plate. The primary display panel includes a first pivot and a second pivot. The first pivot and the second pivot are disposed at the primary display panel. The keyboard module faces the primary display panel and includes a third pivot. One side of the secondary display panel is connected to the first pivot, and another side is a free side. The secondary display panel is flipped through the first pivot to be overlapped on an upper surface of the keyboard module or to abut against the upper surface at the free side. The support plate is flipped through the second pivot and the third pivot to be overlapped on the bottom surface of the primary display panel or to support the primary display panel.

Abstract: A p-GaN high electron mobility transistor is disclosed. The p-GaN high electron mobility transistor includes a substrate, a channel layer located on the substrate, a supply layer laminated on the channel layer, and a doped layer laminated on the supply layer. A doping concentration of the doped layer is gradually distributed, in which the doping concentration in a first doped region close to the supply layer is lower than a doping concentration in a second doped region distant from the supply layer. A gate electrode is located on the doped layer. A source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.

Abstract: A rotary machine device configured to contact with an external object is provided. The rotary machine device includes a rotary motor, a first encoder, a fixed housing, a fixed shaft, an output shaft and a second encoder. The rotary motor includes a motor housing and an exerting shaft. As the rotor of the motor housing rotates for a rotation angle, the rotor drives the exerting shaft to rotate for an exerting angle. The first encoder detects the rotation angle of the rotor. The output shaft includes an elastomer and is inserted in an accommodation hole of the fixed shaft. The elastomer is penetrated through the output shaft and is connected to the exerting shaft. The second encoder includes a disk and a sensor disposed on the exerting shaft and the fixed shaft respectively. The sensor detects the exerting angle of the exerting shaft through the disk.

Abstract: A speed reducing device includes a motor and a speed reducing mechanism. The speed reducing mechanism includes at least one roller assembly, a cycloid disc, at least one fixing disc and a positioning assembly. The roller assembly is disposed within a rotor portion of the motor. While the roller assembly is rotated with the rotor portion, the roller assembly is eccentrically revolved. The roller assembly includes a wheel disc and at least one roller. The cycloid disc includes a main body and at least one cycloid tooth structure. The cycloid tooth structure is protruded from an outer periphery of the main body and in contact with the corresponding roller. While the roller assembly is eccentrically revolved, the at least one cycloid tooth structure is pushed against the corresponding roller, so that the cycloid disc is correspondingly rotated.

Abstract: A method for automatically generating news event of a certain topic applied in an electronic device analyzes text of the news event by a topic model to obtain topics, a probability distribution of keywords in each topic is established, and a time interval distribution of the keywords in each topic is calculated. Keywords within a preset probability distribution range are selected to reduce the size of a word bag relating to the topic, and a time interval range of the reduced word bag of the topic is determined. A calculation of text similarities of the text in a database is made to obtain a news article corresponding to each topic according to the time interval range of the reduced word bag, and a title of the news article as a target topic of the text of the news event is determined.

Abstract: A wiring structure includes a conductive structure, a surface structure and at least one through via. The conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The surface structure is disposed adjacent to a top surface of the conductive structure. The through via extends through the surface structure and extending into at least a portion of the conductive structure.

Abstract: A cycloid speed reducer includes an input shaft, a rolling assembly, a first cycloid disc, a second cycloid disc, a first crankshaft, a second crankshaft, a first output disc and a second output disc. The first cycloid disc and the second cycloid disc are disposed around the input shaft and rotated with the input shaft. The first cycloid disc and the second cycloid disc are located at two opposite sides of the rolling assembly, respectively. The first crankshaft includes a first concentric end and a first eccentric end. The first eccentric end is linked with the first cycloid disc. The second crankshaft includes a second concentric end and a second eccentric end. The second eccentric end is linked with the second cycloid disc. The first output disc is linked with the first concentric end. The second output disc is linked with the second concentric end.

Abstract: A method of fabricating semi-polar gallium nitride includes providing a silicon-on-insulator (SOI) substrate. The SOI substrate includes a substrate, a silicon oxide layer and a silicon substrate. The silicon substrate has (1,0,0) facets. The silicon oxide layer is disposed between the substrate and the silicon substrate. Later, a vapor etching process is performed to etch the (1,0,0) facets to form (1,1,1) facets. The vapor etching process is performed by disposing a nebulizer under the SOI substrate. The top surface of the silicon substrate faces the nebulizer. Later, the nebulizer turns etchant into mist to etch the (1,0,0) facets by the mist to form (1,1,1) facets. Finally, an epitaxial process is performed to grow a semi-polar gallium nitride layer on the (1,1,1) facets.

Abstract: A GaN high electron mobility transistor is disclosed. The GaN high electron mobility transistor includes a substrate, a buffer layer located on the substrate, a barrier layer laminated on the buffer layer, a channel layer laminated on the barrier layer, a supply layer laminated on the channel layer. The barrier layer has either a p-type semiconductor or a wide band gap material. A gate electrode is located on the supply layer. A source electrode and a drain electrode are electrically connected to the channel layer and the supply layer.

Abstract: The invention relates to a display device, applicable to fingerprint image recognition. The display device includes: a substrate, a cover panel, and unit pixels. First, the unit pixels on the display device emit light alternately. When a part of the unit pixels emit light, defined as in a light-emitting state, and when another part of the unit pixels do not emit light, defined as in a sensing state; then, the unit pixels in the light-emitting state are used as the light-emitting area; the unit pixels in the sensing state are used as the sensing area; the unit pixels in the light-emitting area emit incident light to and reflected by a test object; the unit pixels in the sensing area sense the reflected light, and generates an image electrical signal. Therefore, the display device can be used as both a light-emitting element and a sensing element for fingerprint image recognition.