Abstract: A long-afterglow phosphor is added to an electroluminescent lamp in order to continue to provide illumination after the electrical power has been removed from the lamp. When the electroluminescent lamp is powered, it emits light caused the stimulation of an electroluminescent phosphor in the electric field. The emitted light further stimulates a long-afterglow phosphor so that when the lamp is turned off, and the electroluminescent phosphor ceases to emit light, the afterglow phosphor continues to provide a visible illumination at a lower intensity for many additional minutes or hours.

Abstract: An outer suspension type lens shielding mask for a projection apparatus including a sheet body and holding element, in which a rectangular hole is opened in the sheet body, and the sheet body is combined with the holding element to be fixed on a projection apparatus. Another outer suspension type lens shielding mask includes a base plate, in which a rectangular hole is opened in the middle part thereof, and upper and lower adjustable plates are installed behind the base plate. An open rectangular notch is respectively disposed at the middle parts of the upper and the lower adjustable plates. An adjustment mechanism includes a plurality of connecting elements connected to the base plate and the upper and the lower adjustable plates for adjusting the relative positions thereof, to avoid bad shadows yielded outside of a picture due to light diffraction and improve the quality of visual amusement.

Abstract: A projector having an optical engine module is disclosed. The projector has an optical engine module, a lamp module, and a fan and is disposed on the substrate. The lamp module is used for generating a light beam and reflecting the light beam to the optical engine module. The optical engine module comprises an invisible light filter, a color wheel, a light valve, and a projection lens. The fan is used for generating airflow to the lamp module.

Abstract: An inductor formed on a substrate having a dielectric layer thereon is disclosed. The inductor includes a first inductor pattern, a second inductor pattern a third inductor pattern. The first inductor pattern is formed within the dielectric layer, the second inductor pattern is formed on the first inductor pattern and electrically connected thereto, and the third inductor pattern is formed on the second inductor pattern and electrically connected thereto, wherein the first inductor pattern, the second inductor pattern, and the third inductor pattern have similar pattern. Because the thickness of the inductor can be increased by forming a multi-layer inductor structure, the resistance of the inductor, therefore, is reduced.

Abstract: An outer suspension type lens shielding mask for a projection apparatus includes a sheet body and a holding element, in which a rectangular hole is opened in the sheet body. The sheet body is combined with the holding element together for being fixed on a projection apparatus. Another outer suspension type lens shielding mask has a base plate, in which a rectangular hole is opened in the middle part thereof, upper and lower adjustable plates, installed behind the base plate and an open rectangular notch is respectively disposed at the middle parts of the upper and the lower adjustable plates, and an adjustment mechanism, including a plurality of connecting elements connected to the base plate and the upper and the lower adjustable plates for adjusting the relative positions of the upper and the lower adjustable plates on the base plate.

Abstract: A UV-emitting phosphor comprising SrB4O7:Eu phosphor particles that have been treated to yield a surface layer containing from greater than 0 to about 25 atomic percent aluminum. The holdover stability of the treated SrB4O7:Eu phosphor improves the 100-hour maintenance in a fluorescent tanning lamp to the extent that the treated phosphor may be subject to a holdover period of more than 25 days without a significant change in its 100-hour maintenance.

Abstract: A narrow-band UVB emitting phosphor is described wherein the phosphor has a preferred composition represented by the general formula (Y1-x-y-zGdxCeyPrz)MgB5O10 where x has a value in a range from 0.02 to 0.80, y has a value in a range from 0.01 to 0.97, and z has a value in a range from greater than 0 to 0.05 and x+y+z<1. The phosphor has a narrow emission centered at about 312 nm when excited by radiation from a low-pressure mercury discharge.

Abstract: A method is provided for making narrow-band, UVB-emitting, (Y,Gd,Ce,Pr)Mg borate phosphors. The method involves the use of a mixed oxide co-precipitate which is combined with MgO and boric acid and fired twice to form the borate phosphor. The mixed oxide co-precipitate is formed by dissolving sources of Y, Gd, Ce, and optionally Pr, in an acid solution. Oxalic acid or ammonia is added to the solution (or vice versa) to form a co-precipitate of oxalates or hydroxides that are further fired to obtain a mixed oxide co-precipitate. The use of the mixed oxide co-precipitate improves homogeneity and yields a phosphor having a higher brightness with very little or no sticking between the fired cakes and the firing crucibles.

Abstract: The present invention is a single-component, UV-emitting phosphor having a composition represented by the general formula (Y1?x?y?zLaxGdyCeZ)PO4 where x has a value in a range from 0.001 to 0.98, y has a value in a range from 0 and 0.1, z has a value in a range from 0.01 and 0.2, and x+y+z<1. The phosphor when stimulated by 254 nm radiation emits in both the UVA and UVB regions. The relative balance of the UVA and UVB emissions may be varied by adjusting the relative amounts of Y and La. Brightness can be increased by adding Gd to the composition.

Abstract: A method for forming a SiGe HBT, which combines a SEG and Non-SEG growth, is disclosed. The SiGe base layer is deposited by a Non-SEG method. Then, the first-emitter layer is developed directly upon the SiGe base layer that has a good interface quality between the base-emitter. Next, a second poly silicon layer, which has a dopant concentration range within 1E19 to 1E21 (atom/cc), is deposited by SEG method. It not only reduces the resistance of the SiGe base layer, but also avoids the annealing that may influence the performance of the device.

Abstract: A method of correcting a mask layout is provided. The mask layout includes a plurality of element patterns. An inspection program is executed to classify the element patterns of the mask layout into a plurality of element pattern types according to a pattern density of the element patterns. Following this, each of the element pattern types is corrected so as to prevent a plasma micro-loading effect.

Abstract: An inductor formed on a substrate having a dielectric layer thereon is disclosed. The inductor includes a first inductor pattern, a second inductor pattern a third inductor pattern. The first inductor pattern is formed within the dielectric layer, the second inductor pattern is formed on the first inductor pattern and electrically connected thereto, and the third inductor pattern is formed on the second inductor pattern and electrically connected thereto, wherein the first inductor pattern, the second inductor pattern, and the third inductor pattern have similar pattern. Because the thickness of the inductor can be increased by forming a multi-layer inductor structure, the resistance of the inductor, therefore, is reduced.

Abstract: A process for preparing particles of zinc sulfide-based electroluminescent phosphor having a moisture resistant coating thereon which comprises the steps of selecting a reaction vessel having a given height and a porous disc at the bottom thereof; charging the reaction vessel with phosphor particles and fluidizing the particles by introducing an inert gas into the vessel through the porous disc; heating the reaction vessel to a reaction temperature; introducing a coating precursor into the reaction vessel at a position adjacent the bottom of the vessel but above the disc; introducing a co-reactant into the reaction vessel at a position substantially mid-way of the given height; and maintaining the inert gas flow, the precursor flow and the co-reactant flow for a time sufficient for a reaction to occur and coat the phosphor with the moisture resistant coating. Apparatus for carrying out the process is also disclosed.

Abstract: This invention relates to a method for the separation of oil, protein, carbohydrates, shell, and minor toxic components from seeds. The oil seed is subjected to a dehulling process to separate out the hull and kernel and the dehulled oil seed is then compressed into flakes under low temperature. The oil seed is then dephenolized and undergo low temperature delintion. In addition, direct hydrolyzation of the oil-complex is carried out. This technology can be used to produce high quality oil and obtain hydrolyzed protein, thereby comprehensively utilizing the oil seed.

Abstract: A fabrication method for heterojunction bipolar transistor is disclosed. The method uses ISSG oxide instead of conventional PECVD oxide so that the base/emitter interface damage can be reduced. Moreover, the invention replaces the conventional emitter-window/space mask with an emitter-window reverse-tone mask/line mask to minimize the critical dimension of emitter window. Furthermore, the invention also utilizes a two-steps extrinsic base implantation to form two extrinsic bases with different dopant concentrations so that the base resistance can be reduced.

Abstract: A method for forming a SiGe HBT, which combines a SEG and Non-SEG growth, is disclosed. The SiGe base layer is deposited by a Non-SEG method. Then, the first-emitter layer is developed directly upon the SiGe base layer that has a good interface quality between the base-emitter. Next, a second poly silicon layer, which has a dopant concentration range within 1E19 to 1E21 (atom/cc), is deposited by SEG method. It not only reduces the resistance of the SiGe base layer, but also avoids the annealing that may influence the performance of the device.

Abstract: A fabrication method for heterojunction bipolar transistor is disclosed. The method uses ISSG oxide instead of conventional PECVD oxide so that the base/emitter interface damage can be reduced. Moreover, the invention replaces the conventional emitter-window/space mask with an emitter-window reverse-tone mask/line mask to minimize the critical dimension of emitter window. Furthermore, the invention also utilizes a two-steps extrinsic base implantation to form two extrinsic bases with different dopant concentrations so that the base resistance can be reduced.

Abstract: A fabrication method for heterojunction bipolar transistor is disclosed. The method uses ISSG oxide instead of conventional PECVD oxide so that the base/emitter interface damage can be reduced. Moreover, the invention replaces the conventional emitter-window/space mask with an emitter-window reverse-tone mask/line mask to minimize the critical dimension of emitter window. Furthermore, the invention also utilizes a two-steps extrinsic base implantation to form two extrinsic bases with different dopant concentrations so that the base resistance can be reduced.

Abstract: A process for making an electroluminescent phosphor having a given emission spectra A, comprises the steps of manufacturing a beginning electroluminescent phosphor having an emission spectra B, different than A. A coating is applied to the phosphor having the emission spectra B to increase the resistance of the phosphor to the deleterious effects of moisture and change the emission spectra of the phosphor to emission spectra A. The application of the coating includes the steps of reacting a coating precursor with a mixture of oxygen and ozone.

Abstract: A nanopatterned template for use in manufacturing nanoscale objects. The nanopatterned template contains a nanoporous thin film with a periodically ordered porous geomorphology which is made from a process comprising the steps of: (a) using a block copolymerization process to prepare a block copolymer comprising first and second polymer blocks, the first and second polymer blocks being incompatible with each other; (b) forming a thin film under conditions such that the first polymer blocks form into a periodically ordered topology; and (c) selectively degrading the first polymer blocks to cause the thin film to become a nanoporous material with a periodically ordered porous geomorphology. In a preferred embodiment, the block copolymer is poly(styrene)-poly(L-lactide) (PS-PLLA) chiral block copolymer, the first polymer is poly(L-lactide), and the second polymer is polystyrene.