Abstract: A processing system comprises a sensing module, a first internal diagnostic mechanism, and a determination module. The sensing module is configured to couple with a first sensor electrode path of a plurality of sensor electrode paths, wherein the sensing module is configured to drive the first sensor electrode path with a first signal. The first internal diagnostic mechanism configured to couple with a second sensor electrode path and configured to acquire a test signal output while the sensing module drives the first sensor electrode path with the first signal. The first internal diagnostic mechanism comprises a selectable current source configured to couple with the second sensor electrode path, and wherein the selectable current source is enabled during acquisition of the test signal output. The determination module configured to determine whether the first and second sensor electrode paths are ohmically coupled together based on the test signal output.

Abstract: An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Abstract: A processing system for a capacitive sensing input device comprises a sensing module, a first internal diagnostic mechanism, and a determination module. The sensing module is configured to couple with a first sensor electrode path of a plurality of sensor electrode paths, and is configured to drive the first sensor electrode path with a first signal. The first internal diagnostic mechanism is configured to couple with a second sensor electrode path and to acquire a test signal output while the sensing module drives the first sensor electrode path with the first signal. The first internal diagnostic mechanism comprises a selectable current source configured to couple with the second sensor electrode path, and the selectable current source is enabled during acquisition of the test signal output. The determination module is configured to determine whether the first and second sensor electrode paths are ohmically coupled together based on the test signal output.

Abstract: A heat dissipation apparatus including multiple heat exchange sheets. A first path and a second path are formed between the multiple heat exchange sheets, and the first path includes a first countercurrent channel, a guide channel, and a first-outlet cross-flow channel; the second path includes a second countercurrent channel and a second-inlet cross-flow channel. One part of a first fluid that enters the first path enters the first countercurrent channel and mainly performs countercurrent heat exchange with a second fluid that is in the second countercurrent channel, and the other part passes the guide channel and rapidly performs cross-flow heat exchange.

Abstract: A method of optical proximity correction executed by a computer system for modifying line patterns includes the following steps. First, providing an integrated circuit layout with parallel line patterns and interconnect patterns disposed corresponding to the parallel line patterns. Then, using the computer to modify the integrated circuit layout based on a position of the interconnect patterns so as to generate a convex portion and a concave portion respectively on two sides of each of the parallel line patterns. Portions of the line pattern in front of and behind the convex portion and the concave portion are straight lines and have an identical critical dimension.

Abstract: An electrical connector and a manufacturing method thereof includes a housing made of plastic material and at least one terminal module fixed in the housing. The housing defines a mating portion extending along a front-to-rear direction and the mating portion defines at least one mating surface in a vertical direction. The terminal module includes a plurality of conductive terminals with contacting portions and an insulating block, the housing is injection molded with the terminal module to form the mating portion so that the contacting portions of the conductive terminals are exposed on the mating surface. It is simple to manufacture and conducive to reduce the manufacturing cost.

Abstract: A method for forming a high voltage transistor is provided. First, a substrate having a top surface is provided, following by forming a thermal oxide layer on the substrate. At least a part of the thermal oxidation layer is removed to form a recess in the substrate, wherein a bottom surface of the recess is lower than the top surface of the substrate. A gate oxide layer is formed in the recess, then a gate structure is formed on the gate oxide layer. The method further includes forming a source/drain region in the substrate.

Abstract: Provided are an operation processing method and device, wherein the method includes that an element in a current interface is detected, at least one corresponding operation control is generated according to the element, and after it is determined that any one of the at least one operation control is moved onto the element, an operation corresponding to the moved operation control is executed on the element. The technical scheme solves the problem that devices operations tend to become complex, thus improving user operation experience.

Abstract: Disclosed are a method for unlocking a screen and a system for installing a screen. It is determined whether to unlock the screen by calculating an angle between a starting position and a current position of a touch point on the screen with the unlocking reference point as a vertex of the angle. With a technical solution of the disclosure, no path or destination position for screen unlocking is defined, with more casual operation, enhanced user experience, and simpler setting, thereby facilitating usage. Moreover, unlocking by mistake can also be prevented by the setting.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; using a first patterned mask to form a gate dielectric layer on the substrate; removing the first patterned mask; removing part of the gate dielectric layer; and forming a shallow trench isolation (STI) adjacent to two sides of the gate dielectric layer.

Abstract: The present invention provides a high-voltage metal-oxide-semiconductor (HVMOS) transistor comprising a substrate, a gate dielectric layer, a gate electrode and a source and drain region. The gate dielectric layer is disposed on the substrate and includes a protruded portion and a recessed portion, wherein the protruded portion is disposed adjacent to two sides of the recessed portion and has a thickness greater than a thickness of the recessed portion. The gate electrode is disposed on the gate dielectric layer. Thus, the protruded portion of the gate dielectric layer can maintain a higher breakdown voltage, thereby keeping the current from leaking through the gate.

Abstract: Disclosed are a terminal authentication method and a terminal. The authentication method comprises: setting on the terminal a detection device; setting on a stylus a label device capable of being detected by the detection device; the detection device detecting for label information preconfigured in the label device, and authenticating the stylus according to a detection result. Employment of the technical solution of the disclosure solves the technical problems in the related art of the incapability of the terminal to authenticate the stylus.

Abstract: Provided are an object switching method and apparatus, and a touch screen terminal. The object switching method includes: detecting, on an object display interface, that a user performs a multipoint touch control operation of zooming out and/or zooming in a currently displayed object on a touch screen; and judging whether the multipoint touch control operation satisfies a pre-set object switching condition, and when the multipoint touch control operation satisfies the pre-set object switching condition, switching the currently displayed object. The switching method can enable the user to directly switch the currently displayed object without switching to single-point touch control when performing an operation of zooming out and/or zooming in the object, thereby being able to improve the experience of the user browsing the object.

Abstract: An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Abstract: A method and system for processing information based on dual-tone multifrequency, and a receiving terminal are disclosed in the present document. The method includes: a sending terminal establishing a voice call with a receiving terminal; the sending terminal receiving input key information, encoding the key information into dual-tone multifrequency information, and transmitting the dual-tone multifrequency information and voice call audio information to the receiving terminal together; and the receiving terminal decoding and restoring the dual-tone multifrequency information to the key information; determining a type of the key information according to a preset key information judgment policy, and performing corresponding operations according to the key information.

Abstract: A semiconductor device includes a substrate; a deep well region disposed in the substrate; an element region disposed in the substrate and in the deep well region; a drain region disposed in the substrate, in the deep well region, and surrounding the element region; a gate structure disposed on the surface of the substrate, adjacent to the deep well region, and surrounding the drain region; a well region disposed in the substrate, in the deep well region, and surrounding the gate structure; a source region disposed in the substrate, in the well region, and surrounding the gate structure; a body contact region disposed separately from the source region in the well region and surrounding the source region; and an annular doped region disposed separately from the deep well region in the substrate and surrounding the deep well region.

Abstract: The disclosure relates an information display method which comprises when editing information, a sending end marks, with a 3D display label, a content required by a user or a content designated by a system, encodes the information and sends the encoded information; a receiving end receives the information, parses the information to obtain the content with the 3D display label, pre-processes the obtained content to obtain a 3D view, and display the 3D view in 3D mode. Through the technical solution of the disclosure, the 3D display content is marked and the 3D display processing manner is performed, so that some contents in the information can be effectively displayed with a 3D effect with respect to other contents, thereby achieving the enhancement effect, raising concern of the user, and effectively improving the user experience when the user views the information.

Abstract: An over-voltage protection circuit is applied to a switching voltage converting circuit. The switching voltage converting circuit manipulates an upper bridge power switch in the circuit, so as to convert an input voltage into an output voltage by an inductor. A channel of the upper bridge power switch and the inductor are coupled to a phase end. The over-voltage protection circuit includes: a comparator, coupled to the switching voltage converting circuit, wherein when a voltage of the phase end is higher than a voltage limiting threshold, an output end of the comparator outputs a first voltage level; and a pulse width detection unit, coupled to the output end of the comparator, wherein when the output end of the comparator remains the first voltage level for a time period longer than a protection period, the pulse width detection unit outputs an over-voltage protection activation signal.

Abstract: A transparent stereo display includes a first substrate, a second substrate, a common electrode, a display medium, and a patterned phase retardation film. A plurality of pixel structures is disposed on the first substrate. The pixel structures include a plurality of right eye pixel structures and left eye pixel structures. Each pixel structure includes a display region, a first region, and a second region. The patterned phase retardation film includes right eye polarized patterns and left eye polarized patterns. The right eye polarized patterns are disposed corresponding to the right eye pixel structures, and the left eye polarized patterns are disposed corresponding to the left eye polarized patterns. An edge of each right eye polarized pattern overlaps with the second region of the corresponding right eye pixel structure. An edge of each left eye polarized pattern overlaps with the second region of the corresponding left eye pixel structure.

Abstract: A method for manufacturing phase retarder film includes steps of providing a substrate; forming an alignment layer on the substrate, the alignment layer having at least a first phase region, at least a second phase region and at least a third phase region, the third phase region being disposed between the first phase region and the second phase region, and a phase retardation of the third phase region being different from phase retardations of the first phase region and the second phase region. The phase retardation of the first phase region is different from the phase retardation of the second phase region.