Patents by Inventor Wen Feng

Wen Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8361634
    Abstract: A process for joining a bronze part and a silicon carbide ceramic part comprising: providing a bronze part, a SiC ceramic part, a Al foil and a Ni foil; placing the SiC ceramic part, the Al foil, the Ni foil, and the bronze part into a mold, the Al foil and the Ni foil located between the SiC ceramic part and the bronze part, the Al foil abutting against the SiC ceramic part, the Ni foil abutting against the bronze part and the Al foil; placing the mold into a chamber of an hot press sintering device, heating the chamber and pressing the bronze part, the SiC ceramic part, the Al foil, and the Ni foil at least until the bronze part, the SiC ceramic part, the Al foil and the Ni foil form a integral composite article.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: January 29, 2013
    Assignees: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd., Hon Hai Precision Industry Co., Ltd.
    Inventors: Hsin-Pei Chang, Wen-Rong Chen, Huann-Wu Chiang, Cheng-Shi Chen, Wen-Feng Hu
  • Publication number: 20130020452
    Abstract: A retaining structure includes a bracket, a retaining element, a securing element, a spring and a latching element. The bracket defines a mounting hole. The retaining element defines an opening and having a pin. The securing element is slidably retained to the retaining element. The securing element defines a securing groove, a guiding groove and a sliding groove. The sliding groove has a first end and a second end. The spring connects the retaining element and the securing element. The latching element is latched with the securing element. The latching element including a latching board and a latching post protruding from the latching board.
    Type: Application
    Filed: October 17, 2011
    Publication date: January 24, 2013
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.
    Inventors: MO-MING YU, WEN-FENG HU
  • Patent number: 8349469
    Abstract: A process for joining a stainless steel part and a silicon carbide ceramic part comprising: providing a SUS part, a SiC ceramic part, a Mo foil and a Ti foil; placing the SiC ceramic part, the Mo foil, the Ti foil, and the SUS part into a mold, the Mo foil and the Ti foil located between the SiC ceramic part and the SUS part, the Mo foil abutting the SiC ceramic part, the Ti foil abutting the SUS part and the Mo foil; placing the mold into a chamber of an hot press sintering device, heating the chamber and pressing the SUS part, the SiC ceramic part, the Mo foil, and the Ti foil at least until the SUS part, the SiC ceramic part, the Mo foil and the Ti foil form a integral composite article.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: January 8, 2013
    Assignees: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd., Hon Hai Precision Industry Co., Ltd.
    Inventors: Hsin-Pei Chang, Wen-Rong Chen, Huann-Wu Chiang, Cheng-Shi Chen, Wen-Feng Hu
  • Publication number: 20130005151
    Abstract: In an exemplary method for forming contact holes, a substrate overlaid with an etching stop layer and an interlayer dielectric layer in that order is firstly provided. A first etching process then is performed to form at least a first contact opening in the interlayer dielectric layer. A first carbon-containing dielectric layer subsequently is formed overlying the interlayer dielectric layer and filling into the first contact opening. After that, a first anti-reflective layer and a first patterned photo resist layer are sequentially formed in that order overlying the carbon-containing dielectric layer. Next, a second etching process is performed by using the first patterned photo resist layer as an etching mask to form at least a second contact opening in the interlayer dielectric layer.
    Type: Application
    Filed: July 1, 2011
    Publication date: January 3, 2013
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chieh-Te CHEN, Yi-Po Lin, Feng-Yih Chang, Chih-Wen Feng, Shang-Yuan Tsai
  • Publication number: 20120315748
    Abstract: A method for fabricating an aperture is disclosed. The method includes the steps of: forming a hard mask containing carbon on a surface of a semiconductor substrate; and using a non-oxygen element containing gas to perform a first etching process for forming a first aperture in the hard mask.
    Type: Application
    Filed: June 8, 2011
    Publication date: December 13, 2012
    Inventors: Feng-Yi Chang, Yi-Po Lin, Jiunn-Hsiung Liao, Shang-Yuan Tsai, Chih-Wen Feng, Shui-Yen Lu, Ching-Pin Hsu
  • Patent number: 8302920
    Abstract: A dual vacuum mount type support device includes a support arm, two vacuum mount assemblies pivotally connected to the two distal ends of the support arm for securing to the flat surface of a support wall and the flat surface of an object to be supported on the support wall, and two pivot locks for locking the vacuum mount assemblies to the support arm in the respective adjusted position.
    Type: Grant
    Filed: July 6, 2010
    Date of Patent: November 6, 2012
    Inventor: Wen-Feng Tsai
  • Patent number: 8304065
    Abstract: A treatment for a microelectronic device comprises a dicing tape (110) and a polymer composite film (120) having a pigment or other colorant added thereto and, in some embodiments, a pre-cure glass transition temperature greater than 50° Celsius. The film can comprise multiple layers, with one layer being tacky and the other layer non-tacky at a given temperature.
    Type: Grant
    Filed: December 28, 2009
    Date of Patent: November 6, 2012
    Inventors: Leonel Arana, Dingying Xu, Vijay Wakharkar, Wen Feng, Nirupama Chakrapani, Shankar Ganapathysubramanian, Jorge Sanchez, Mohit Mamodia
  • Publication number: 20120270403
    Abstract: A method of fabricating openings is disclosed. First, a semiconductor substrate having a salicide region thereon is provided. An etch stop layer and at least a dielectric layer are disposed on the semiconductor substrate from bottom to top. Second, the dielectric layer and the etching stop layer are patterned to form a plurality of openings in the dielectric layer and in the etching stop layer so that the openings expose the salicide region. Then, a dielectric thin film covering the dielectric layer, sidewalls of the openings and the salicide region is formed. Later, the dielectric thin film disposed on the dielectric layer and on the salicide region is removed.
    Type: Application
    Filed: June 28, 2012
    Publication date: October 25, 2012
    Inventors: Feng-Yi Chang, Pei-Yu Chou, Jiunn-Hsiung Liao, Chih-Wen Feng, Ying-Chih Lin, Po-Chao Tsao
  • Patent number: 8293639
    Abstract: A method for controlling an ADI-AEI CD difference ratio of openings having different sizes is described. The openings are formed through a silicon-containing material layer, an etching resistive layer and a target material layer in turn. Before the opening etching steps, at least one of the opening patterns in the photoresist mask is altered in size through photoresist trimming or deposition of a substantially conformal polymer layer. A first etching step forming thicker polymer on the sidewall of the wider opening pattern is performed to form a patterned Si-containing material layer. A second etching step is performed to remove exposed portions of the etching resistive layer and the target material layer. At least one parameter among the parameters of the photoresist trimming or polymer layer deposition step and the etching parameters of the first etching step is controlled to obtain a predetermined ADI-AEI CD difference ratio.
    Type: Grant
    Filed: February 16, 2009
    Date of Patent: October 23, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Feng-Yih Chang, Pei-Yu Chou, Jiunn-Hsiung Liao, Chih-Wen Feng, Ying-Chih Lin
  • Publication number: 20120242138
    Abstract: According to the present invention, a bicycle rim comprises a rim body and a reinforcement layer. Each of the rim body and the reinforcement layer is constructed of carbon fiber, and the reinforcement layer is integrally formed on the rim body.
    Type: Application
    Filed: March 22, 2011
    Publication date: September 27, 2012
    Inventor: Wen-Feng Tsai
  • Patent number: 8268454
    Abstract: A process for joining a stainless steel part and a zirconia ceramic part comprising: providing a SUS part, a ZrO2 ceramic part, a Mo foil and a Cu foil; depositing a nickel coating on a surface of the ZrO2 ceramic part; placing the ZrO2 ceramic part, the Mo foil, the Cu foil, and the SUS part into a mold, the Mo foil and the Cu foil located between the ZrO2 ceramic part and the SUS part; placing the mold into a chamber of a hot press sintering device, heating the chamber and pressing the SUS part with the nickel coating, the ZrO2 ceramic part, the Mo foil, and the Cu foil at least until the SUS part, the ZrO2 ceramic part, the Mo foil and the Cu foil form a integral composite article.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: September 18, 2012
    Assignees: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd., Hon Hai Precision Industry Co., Ltd.
    Inventors: Hsin-Pei Chang, Wen-Rong Chen, Huann-Wu Chiang, Cheng-Shi Chen, Wen-Feng Hu
  • Patent number: 8270082
    Abstract: A microstructure diffuser includes a light-entering surface, a light-emitting surface, and a plurality of microstructure portions having a first microstructure unit and a second microstructure unit. The first microstructure unit includes a first side surface, a second side surface, a top surface, a first pitch (P1), a second pitch (P2), and a height (H). The second microstructure unit has a curve function shape and is located at the light-emitting surface. The first side surface and the second side surface of the first microstructure unit receive the light beam of the light source to form a first optical path. The top surface of the first microstructure unit receives the light beam of the light source to form a second optical path. The second microstructure unit receives the light beam of the light source to form a third optical path.
    Type: Grant
    Filed: June 16, 2009
    Date of Patent: September 18, 2012
    Assignee: Entire Technology Co., Ltd.
    Inventors: Chun-Wei Wang, Wen-Feng Cheng, Chih-Wei Huang, Yan-Zuo Chen
  • Patent number: 8262371
    Abstract: A pneumatic control device includes a base comprising a reservoir, a first check valve for only allowing hydraulic fluid to flow into the reservoir, and a second check valve for only allowing the fluid to flow out of the reservoir; a hollow cylinder comprising a spring biased piston; a body mounted to the cylinder thereunder and releasably secured to the base, the body comprising a stepped-diameter passageway with a poppet mounted therein; and a cover releasably secured onto the poppet. In response to feeding pressurized air into the cylinder, the fluid in the reservoir flows out during a first stroke of the piston, and the fluid is sucked back into the reservoir during an opposite second stroke of the piston. In one embodiment, the fluid is for actuating a machine vise.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: September 11, 2012
    Inventor: Wen-Feng Wang
  • Patent number: 8257834
    Abstract: A process for joining a stainless steel part and a silicon nitride ceramic part comprising: providing a stainless steel part, a SiN ceramic part, a Mo foil and a Fe foil; placing the SiN ceramic part, the Mo foil, the Fe foil, and the stainless steel part into a mold, the Mo foil and the Fe foil located between the SiN ceramic part and the stainless steel part, the Mo foil abutting the SiN ceramic part, the Fe foil abutting the stainless steel part and the Mo foil; placing the mold into a chamber of an hot press sintering device, heating the chamber and pressing the stainless steel part, the SiN ceramic part, the Mo foil, and the Fe foil at least until the stainless steel part, the SiN ceramic part, the Mo foil and the Fe foil form a integral composite article.
    Type: Grant
    Filed: July 21, 2011
    Date of Patent: September 4, 2012
    Assignees: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd., Hon Hai Precision Industry Co., Ltd.
    Inventors: Hsin-Pei Chang, Wen-Rong Chen, Huann-Wu Chiang, Cheng-Shi Chen, Wen-Feng Hu
  • Patent number: 8252429
    Abstract: A process for joining a stainless steel part and a zirconia ceramic part comprising: providing a SUS part, a ZrO ceramic part, a Mo foil and a Ni foil; placing the ZrO ceramic part, the Mo foil, the Ni foil, and the SUS part into a mold, the Mo foil and the Ni foil located between the ZrO ceramic part and the SUS part, the Mo foil abutting against the ZrO ceramic part, the Ni foil abutting against the SUS part and the Mo foil; placing the mold into a chamber of an hot press sintering device, heating the chamber and pressing the SUS part, the ZrO ceramic part, the Mo foil, and the Ni foil at least until the SUS part, the ZrO ceramic part, the Mo foil and the Ni foil form a integral composite article.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: August 28, 2012
    Assignees: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd., Hon Hai Precision Industry Co., Ltd.
    Inventors: Hsin-Pei Chang, Wen-Rong Chen, Huann-Wu Chiang, Cheng-Shi Chen, Wen-Feng Hu
  • Patent number: 8252650
    Abstract: A method for fabricating MOS transistor includes the steps of: overlapping a second stress layer on an etching stop layer and a first stress layer at a boundary region of the substrate; forming a dielectric layer on the first stress layer and the second stress layer; performing a first etching process to partially remove the dielectric layer for exposing a portion of the second stress layer at the boundary region; performing a second etching process to partially remove the exposed portion of the second stress layer for exposing the etching stop layer; performing a third etching process to partially remove the exposed portion of the etching stop layer for exposing the first stress layer at the boundary region; and performing a fourth etching process partially remove the exposed portion of the first stress layer.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: August 28, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Feng-Yi Chang, Yi-Po Lin, Jiunn-Hsiung Liao, Shang-Yuan Tsai, Chih-Wen Feng, Shui-Yen Lu, Ching-Pin Hsu
  • Patent number: 8247081
    Abstract: A process for joining a stainless steel part and a titanium carbide ceramic part comprising: providing a SUS part, a TiC ceramic part, a Ti foil and a Fe foil; placing the TiC ceramic part, the Ti foil, the Fe foil, and the SUS part into a mold, the Ti foil and the Fe foil located between the TiC ceramic part and the SUS part, the Ti foil abutting the TiC ceramic part, the Fe foil abutting the SUS part and the Ti foil; placing the mold into a chamber of an hot press sintering device, heating the chamber and pressing the SUS part, the TiC ceramic part, the Ti foil, and the Fe foil at least until the SUS part, the TiC ceramic part, the Ti foil and the Fe foil form a integral composite article.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: August 21, 2012
    Assignees: Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd., Hon Hai Precision Industry Co., Ltd.
    Inventors: Hsin-Pei Chang, Wen-Rong Chen, Huann-Wu Chiang, Cheng-Shi Chen, Wen-Feng Hu
  • Patent number: 8236702
    Abstract: A semiconductor substrate having an etch stop layer and at least a dielectric layer disposed from bottom to top is provided. The dielectric layer and the etching stop layer is then patterned to form a plurality of openings exposing the semiconductor substrate. A dielectric thin film is subsequently formed to cover the dielectric layer, the sidewalls of the openings, and the semiconductor substrate. The dielectric thin film disposed on the dielectric layer and the semiconductor substrate is then removed while the dielectric thin film disposed on the sidewalls remains.
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: August 7, 2012
    Assignee: United Microelectronics Corp.
    Inventors: Feng-Yi Chang, Pei-Yu Chou, Jiunn-Hsiung Liao, Chih-Wen Feng, Ying-Chih Lin, Po-Chao Tsao
  • Publication number: 20120193970
    Abstract: According to the present invention, a bicycle rim comprises a body having an axis defining a center thereof. The body includes an outer periphery and an inner periphery. The outer periphery and the axis have an outer radius therebetween, and the outer radius is constant. The inner periphery includes a first portion having non constant diameter.
    Type: Application
    Filed: January 31, 2011
    Publication date: August 2, 2012
    Inventor: Wen-Feng Tsai
  • Publication number: 20120195067
    Abstract: A light-guiding plate includes a main unit and a reflecting unit. The main body of the main unit has a light-receiving surface, a light-reflecting surface, and a light-projecting surface. The reflecting unit includes a plurality of reflecting microstructures formed on the light-reflecting surface. Each reflecting microstructure has a first reflecting curved surface, and the first reflecting curved surface of each reflecting microstructure has a first reflecting curved line shown on the lateral surface thereof. The first reflecting curved line of each first reflecting curved surface is substantially composed of a first base point as an initial point on the first bottom portion of the light-reflecting surface, a second base point as an end point on the second bottom portion of the light-reflecting surface, and a first curve track connected from the first base point to the second base point and passing through a plurality of first trajectory points.
    Type: Application
    Filed: April 28, 2011
    Publication date: August 2, 2012
    Applicant: ENTIRE TECHNOLOGY CO., LTD.
    Inventors: Hao-Xiang Lin, Wen-Feng Cheng, Yan Zuo Chen, Jui-Hsiang Chang