Patents by Inventor Wen Han

Wen Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180366522
    Abstract: The invention provides a display device. The display device including: a driving mechanism; a rolling mechanism; and a flexible display, the flexible display is supported by the rolling mechanism, and the driving mechanism drives the rolling mechanism to roll in cycles. The display device of the present invention can realize rotational display, thereby satisfying the diversified demand of users.
    Type: Application
    Filed: June 20, 2017
    Publication date: December 20, 2018
    Inventors: Wen Han, Rong Ma, Jichuan Liu
  • Patent number: 10134861
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a first fin structure and a second fin structure disposed over the substrate. The semiconductor device structure includes a first gate stack overlapping the first fin structure. The first gate stack has a first width. The first gate stack includes a first work function layer. A first top surface of the first work function layer is positioned above the first fin structure by a first distance. The semiconductor device structure includes a second gate stack disposed overlapping the second fin structure. The first width is less than a second width of the second gate stack. A second top surface of a second work function layer of the second gate stack is positioned above the second fin structure by a second distance. The first distance is less than the second distance.
    Type: Grant
    Filed: October 8, 2014
    Date of Patent: November 20, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Han Fang, Chang-Yin Chen, Ming-Chia Tai, Po-Chi Wu
  • Publication number: 20180282376
    Abstract: Systems and methods have been developed to design and engineer glycan dynamics to improve immunogen antigenicity. These include systems for identify glycosylation sites that that impact binding of antibodies to the immunogen, and modifying the glycan profiles on these glycosylation sites to synthesize novel immunogens, antibodies and vaccines. Then, the machine learning algorithm may output data relating to the glycosylation sites that are determinant or likely impact the binding affinity of the variants to the one or more antibodies.
    Type: Application
    Filed: September 9, 2016
    Publication date: October 4, 2018
    Applicants: THE GENERAL HOSPITAL CORPORATION, UNIVERSITY OF GEORGIA RESEARCH FOUNDATION
    Inventors: Galit ALTER, Robert Lance WELLS, Wen-Han YU
  • Publication number: 20180277790
    Abstract: A flexible display panel is disclosed. The flexible display panel includes a flexible display unit and a curved state setting component. The flexible display unit includes a first surface and a second surface opposite the first surface where the first surface is an emitting surface of the flexible display unit. The curved state setting component is fixed on the second surface to adjust the flexible display unit in a curved state. This disclosure allows the flexible display panel to remain in a curved state.
    Type: Application
    Filed: April 18, 2017
    Publication date: September 27, 2018
    Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY Co., LTD.
    Inventors: Wen HAN, Rong MA
  • Publication number: 20180240194
    Abstract: A system, a computer readable storage medium, and a method for detecting insurance fraud or for comparing references use visual analytics-based techniques. The method can include identifying a scratch and a scratch location on a vehicle in a 3-dimensional rendering in comparison to a base image or in comparison to a stored image in a database, comparing one or more features of the scratch such as color features of the scratch in the scratch location in comparison to the scratch location or comparing one or more texture features of the scratch in the scratch location in comparison to the scratch location in the base image or the stored image. The method can further generate a similarity calculation based on the one or more comparisons for the scratch, the scratch location, the one or more scratch features of the scratch and presents a result in response to the similarity calculation.
    Type: Application
    Filed: February 23, 2017
    Publication date: August 23, 2018
    Inventors: Wei Shan DONG, Peng GAO, Chang Sheng LI, Wen Han LUO, Ren Jie YAO, Ting YUAN, Jun ZHU
  • Publication number: 20180113458
    Abstract: Systems and methods for obtaining vehicle operational data and driving context data from one or more monitoring systems, including converting the obtained vehicle operational data and driving context data into sequential vehicle operational feature data and sequential driving context feature data, calibrating the sequential vehicle operational feature data and the sequential driving context feature data temporally to form calibrated sequential vehicle operational feature data and calibrated sequential driving context feature data, constructing a sequence table of temporal sample points based on the calibrated sequential vehicle operational feature data and the calibrated sequential driving context feature data, feeding the sequence table into a deep neural network model for applying network learning to form a trained deep neural network model, extracting driving behavior features from the trained deep neural network model and analyzing the extracted driving behavior features to determine driving behavior char
    Type: Application
    Filed: October 24, 2016
    Publication date: April 26, 2018
    Inventors: Wei Shan Dong, Peng Gao, Jian Li, Chang Sheng Li, Wen Han Luo, Chun Yang Ma, Renjie Yao, Ting Yuan, Jun Zhu
  • Publication number: 20180085426
    Abstract: The present invention provides novel peptidomimetic macrocycles and methods of using such macrocycles for the treatment of disease.
    Type: Application
    Filed: September 21, 2017
    Publication date: March 29, 2018
    Inventors: Huw M. NASH, Rosana KAPELLER-LIBERMANN, Jia-Wen HAN, Tomi K. SAWYER, Justin NOEHRE, Noriyuki KAWAHATA
  • Publication number: 20180069402
    Abstract: A photovoltaic (PV) power station includes at least one AC power production unit. The AC power production unit includes an energy reservoir that is supplied with DC energy from a DC power generator, such as PV panels. The energy reservoir is used as a buffer to store energy, and improve the efficiency of the PV power station. Whether or not an energy reservoir is used, decoupler devices may be used to prevent power annihilation that can decrease the amount of power delivered by the power station to the grid. In system integration for a PV power station, it is found that the declared rating of DC/AC converter in power grid convention should not be taken as the power conversion capability.
    Type: Application
    Filed: October 27, 2017
    Publication date: March 8, 2018
    Inventors: Geoffrey Wen-Tai Shuy, Jau-Dar LIAO, Hsin-Chen LAI, Feng-Tse CHUNG, Hsiu-Wen HAN
  • Publication number: 20180047633
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure. The method includes forming a gate material layer in the trench. The method includes forming a planarization layer over the gate material layer. The planarization layer includes a first material that is different from a second material of the gate material layer and a third material of the dielectric layer. The method includes performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench.
    Type: Application
    Filed: October 23, 2017
    Publication date: February 15, 2018
    Inventors: Chai-Wei Chang, Po-Chi Wu, Wen-Han Fang
  • Publication number: 20170319116
    Abstract: A device for measuring brain oxygen level of a subject, including a probe (210) and a detecting means (220), which are respectively coupled to a processor (230). According to the example, the probe (210) includes three light sources (215a, 215b, 215c) that simultaneously emit the first, second, and third NIR wavelengths across the brain of the subject. The first NIR wavelength is the isosbestic wavelength for oxy-hemoglobin (HbO2) and deoxy-hemoglobin (Hb), the second NIR wavelength is shorter than the first NIR wavelength, and the third NIR wavelength is longer than the first NIR wavelength. The detecting means (220) includes a first, second and third detectors (221, 222, 223) for respectively detecting the NIR intensities of the first, second and third NIR wavelengths traveled across the brain. The processor (230) is configured to determine blood oxygen level based on the measured NIR intensities of the first, second and third NIR wavelengths by use of build-in algorithm derived from Beer-Lambert Law.
    Type: Application
    Filed: November 16, 2015
    Publication date: November 9, 2017
    Applicant: MacKay Memorial Hospital
    Inventors: Wen-Han CHANG, Chih-Wei LU
  • Patent number: 9806611
    Abstract: A circuit includes a power-on control circuit and a voltage generating circuit. The power-on control circuit is configured to cause a power-on control signal to follow a voltage level of a first supply voltage during a first time period that a voltage level of a second supply voltage is less than a threshold value, and to set the power-on control signal to have a voltage level of a reference voltage during a second time period that the voltage level of the second supply voltage is greater than the threshold value. The voltage generating circuit is configured to generate a voltage signal responsive to the power-on control signal.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: October 31, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Wen-Han Wang
  • Patent number: 9799565
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The substrate has a fin structure, and the dielectric layer has a trench exposing a portion of the fin structure. The method includes forming a gate material layer in the trench. The method includes forming a planarization layer over the gate material layer. The planarization layer includes a first material that is different from a second material of the gate material layer and a third material of the dielectric layer. The method includes performing an etching process to remove the planarization layer and a first upper portion of the gate material layer so as to form a gate in the trench.
    Type: Grant
    Filed: February 18, 2015
    Date of Patent: October 24, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chai-Wei Chang, Po-Chi Wu, Wen-Han Fang
  • Publication number: 20170266254
    Abstract: Disclosed are peptidomimetic macrocycles comprising a helix, such as an alpha helix, and methods of using such macrocycles for the treatment of disease such as cancer. In other aspects, the peptidomimetic macrocycle comprises an ?,?-disubstituted amino acid, or may comprise a crosslinker linking the ?-positions of at least two amino acids or at least one of said two amino acids may be an ?,?-disubstituted amino acid. Further included is the targeting of components of the Wnt signaling pathway such as the Tcf4-/3-catenin complex.
    Type: Application
    Filed: November 11, 2016
    Publication date: September 21, 2017
    Inventors: Huw M. NASH, Rosana KAPELLER-LIBERMANN, Jia-Wen HAN, Tomi K. SAWYER, Justin NOEHRE, Noriyuki KAWAHATA
  • Publication number: 20170222642
    Abstract: A voltage level shifting circuit includes two PMOS transistors and four NMOS transistors. Sources of the PMOS transistors receive a first supply voltage value, a first PMOS transistor gate coupled with drains of second PMOS and NMOS transistors is a first output, and a second PMOS transistor gate coupled with drains of first PMOS and NMOS transistors is a second output. The first NMOS transistor source is coupled with a third NMOS transistor drain, and the third NMOS transistor gate is a first input. The second NMOS transistor source is coupled with a fourth NMOS transistor drain, and the fourth NMOS transistor gate is a second input. A voltage generating circuit generates a voltage at first and second NMOS transistor gates based on the first supply voltage value and on a signal, the signal behaving based on the first supply voltage value and a different second supply voltage value.
    Type: Application
    Filed: April 11, 2017
    Publication date: August 3, 2017
    Inventor: Wen-Han WANG
  • Publication number: 20170194180
    Abstract: A wafer container includes at least one shelf and a frame. The shelf is capable of holding at least one wafer, and has at least one opening therein. The opening is at least partially exposed by the wafer when the wafer is hold by the shelf. The frame carries the shelf and allows access to the shelf.
    Type: Application
    Filed: January 5, 2016
    Publication date: July 6, 2017
    Inventors: Po-Hsun TSENG, Yan-Hong LIU, Wen-Han TAN, Hung-Wen CHEN
  • Patent number: 9628080
    Abstract: A voltage generating circuit includes a first supply voltage node, a first switching device, a sub voltage generating circuit, and a second switching device. The first supply voltage node is configured to have a first supply voltage value, and is coupled with the first switching device. The sub voltage generating circuit is coupled in between the first switching device and the second switching device. The first switching circuit and the second switching circuit are configured to receive a control signal behaving based on the first supply voltage value and a second supply voltage value different from the first supply voltage value.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: April 18, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Wen-Han Wang
  • Publication number: 20170062617
    Abstract: A method includes forming an opening in a dielectric to reveal a protruding semiconductor fin, forming a gate dielectric on sidewalls and a top surface of the protruding semiconductor fin, and forming a conductive diffusion barrier layer over the gate dielectric. The conductive diffusion barrier layer extends into the opening. The method further includes forming a silicon layer over the conductive diffusion barrier layer and extending into the opening, and performing a dry etch on the silicon layer to remove horizontal portions and vertical portions of the silicon layer. After the dry etch, a conductive layer is formed over the conductive diffusion barrier layer and extending into the opening.
    Type: Application
    Filed: November 9, 2016
    Publication date: March 2, 2017
    Inventors: Wen-Han Fang, Po-Chi Wu
  • Patent number: 9496402
    Abstract: A method includes forming an opening in a dielectric to reveal a protruding semiconductor fin, forming a gate dielectric on sidewalls and a top surface of the protruding semiconductor fin, and forming a conductive diffusion barrier layer over the gate dielectric. The conductive diffusion barrier layer extends into the opening. The method further includes forming a silicon layer over the conductive diffusion barrier layer and extending into the opening, and performing a dry etch on the silicon layer to remove horizontal portions and vertical portions of the silicon layer. After the dry etch, a conductive layer is formed over the conductive diffusion barrier layer and extending into the opening.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: November 15, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Han Fang, Po-Chi Wu
  • Patent number: 9450247
    Abstract: A preparation method of an oligomer-polymer is provided. A maleimide is reacted with a barbituric acid to form a first oligomer-polymer. The first oligomer-polymer is then reacted with a phenylsiloxane oligomer to form a second oligomer-polymer. The phenylsiloxane oligomer is a compound represented by formula 1: Ph-Si(OH)xOy ??formula 1, wherein x is 0.65 to 2.82 and y is 0.09 to 1.17.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: September 20, 2016
    Assignees: National Taiwan University of Science and Technology, Industrial Technology Research Institute
    Inventors: Fu-Ming Wang, Bing-Joe Hwang, Chorng-Shyan Chern, Jung-Mu Hsu, Wen-Han Li
  • Publication number: 20160261875
    Abstract: A video stream processing method and a video processing apparatus thereof are provided. The video stream processing method includes the following steps: obtaining a video stream, wherein the video stream is composed of a plurality of basic processing units; determining whether a size of the basic processing units is greater than a predetermined size; if the size of the basic processing units is greater than the predetermined size, determining whether each of the basic processing units has a coding-unit-splitting flag; splitting each of the basic processing units into a plurality of blocks according to the coding-unit-splitting flag or the type of each of the basic processing units, wherein a size of the blocks is equal to or less than the predetermined size; and, performing a video processing of the video stream according to the blocks.
    Type: Application
    Filed: August 6, 2015
    Publication date: September 8, 2016
    Inventor: Wen-Han Zheng