Patents by Inventor Wen Han

Wen Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140339652
    Abstract: A semiconductor device with oxygen-containing metal gates includes a substrate, a gate dielectric layer and a multi-layered stack structure. The multi-layered stack structure is disposed on the substrate. At least one layer of the multi-layered stack structure includes a work function metal layer. The concentration of oxygen in the side of one layer of the multi-layered stack structure closer to the gate dielectric layer is less than that in the side of one layer of the multi-layered stack structure opposite to the gate dielectric layer.
    Type: Application
    Filed: August 1, 2014
    Publication date: November 20, 2014
    Inventors: Guang-Yaw Hwang, Chun-Hsien Lin, Hung-Ling Shih, Jiunn-Hsiung Liao, Zhi-Cheng Lee, Shao-Hua Hsu, Yi-Wen Chen, Cheng-Guo Chen, Jung-Tsung Tseng, Chien-Ting Lin, Tong-Jyun Huang, Jie-Ning Yang, Tsung-Lung Tsai, Po-Jui Liao, Chien-Ming Lai, Ying-Tsung Chen, Cheng-Yu Ma, Wen-Han Hung, Che-Hua Hsu
  • Patent number: 8885965
    Abstract: An image denoising method includes the steps of: sequentially selecting a pixel in an image as a current pixel; dynamically determining a current search block and a strength parameter; pre-denoising the comparison block of each pixel in the current search block; comparing the comparison block of the pre-denoised neighborhood pixel and the comparison block of the pre-denoised current pixel to obtain a similarity between each neighborhood pixel and the current pixel in the current search block; determining a weighting of each neighborhood pixel related to the current pixel according to the strength parameter, and a distance and the similarity between each neighborhood pixel and the current pixel in the current search block; and weighted averaging each neighborhood pixel and the current pixel in the current search block according to the weighting to obtain a reconstruction value of the current pixel.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: November 11, 2014
    Assignee: PixArt Imaging Inc
    Inventors: Shu Sian Yang, Wen Han Yao, Chuan Hsin Lee
  • Publication number: 20140285447
    Abstract: An operating method for dynamically adjusting a touch apparatus is disclosed herein. The touch apparatus includes a storage component and a touch component. The storage component is configured to store at least one application, and a plurality of weights of touch motion modes and touch motion modes corresponding to the application. The operating method includes determining whether execution of the application has started. When execution of the application has started, a plurality of touch motions corresponding to the executed application are received through the touch component. At least one of the weights of touch motion modes corresponding to the executed application is adjusted according to the touch motions. At least one of touch parameters is adjusted according to the weights of touch motion modes corresponding to the executed application.
    Type: Application
    Filed: September 18, 2013
    Publication date: September 25, 2014
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Ming-Yu CHANG, Chun-Ming WANG, Yun-Rui CHEN, Chia-Hui Chen, Wen-Han LI, Fei-Zhi GUO, Ping-Hsien NIU
  • Patent number: 8836831
    Abstract: An image sensor includes a sensor matrix including a plurality of sensing elements and a plurality of shutter control lines. Each sensing element includes an electronic shutter and a photo-detector, wherein the electronic shutter controls the exposure time of the photo-detector. Each shutter control line couples to a row or column of the electronic shutters, whereby different rows or columns of the electronic shutters can be independently controlled, and the photo-detectors in the same row or column can have the same exposure time.
    Type: Grant
    Filed: February 20, 2012
    Date of Patent: September 16, 2014
    Assignee: Pixart Imaging Inc.
    Inventors: Ren Hau Gu, Chih Hsin Lin, Wen Han Yao, Hung Ching Lai, Shu Sian Yang, Yu Hao Huang, Chih Hung Lu, En Feng Hsu, Chi Chieh Liao
  • Patent number: 8823109
    Abstract: A transistor structure is provided in the present invention. The transistor structure includes: a substrate comprising a N-type well, a gate disposed on the N-type well, a spacer disposed on the gate, a first lightly doped region in the substrate below the spacer, a P-type source/drain region disposed in the substrate at two sides of the gate, a silicon cap layer covering the P-type source/drain region and the first lightly doped region and a silicide layer disposed on the silicon cap layer, and covering only a portion of the silicon cap layer.
    Type: Grant
    Filed: January 9, 2013
    Date of Patent: September 2, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Wen-Han Hung, Tsai-Fu Chen, Shyh-Fann Ting, Cheng-Tung Huang, Kun-Hsien Lee, Ta-Kang Lo, Tzyy-Ming Cheng
  • Publication number: 20140232893
    Abstract: There is provided an image sensor including a light sensitive device and a digital signal processing circuit. The light sensitive device is configured to output a digital image. The digital signal processing circuit is configured to detect at least one feature point in the digital image and calculate a feature point coordinate of the at least one feature point.
    Type: Application
    Filed: November 26, 2013
    Publication date: August 21, 2014
    Applicant: PIXART IMAGING, INC.
    Inventors: CHUAN-HSIN LEE, WEN-HAN YAO
  • Patent number: 8765561
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a dummy gate on the substrate; forming a contact etch stop layer on the dummy gate and the substrate; performing a planarizing process to partially remove the contact etch stop layer; partially removing the dummy gate; and performing a thermal treatment on the contact etch stop layer.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: July 1, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Wen-Han Hung, Tsai-Fu Chen, Ta-Kang Lo, Tzyy-Ming Cheng
  • Patent number: 8765329
    Abstract: The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: July 1, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jeng-Shiun Ho, Luke Lo, Ting-Chun Liu, Min-Hung Cheng, Jing-Wei Shih, Wen-Han Chu, Cheng-Cheng Kuo, Hua-Tai Lin, Tsai-Sheng Gau, Ru-Gun Liu, Yu-Hsiang Lin, Shang-Yu Huang
  • Publication number: 20140171044
    Abstract: When a number of users share one telephone number, the present invention indicates who the callee (the person the caller wants to talk to) is, with personalized rings and information shown on a display, so as to allow each user to quickly identify calls directed to him/her. A mobile phone user could inform the callee his/her intent and/or the urgency level of the call by selecting from options provided by the callee reflecting the callee's preferences.
    Type: Application
    Filed: November 25, 2013
    Publication date: June 19, 2014
    Inventors: Bessy Wen-Han LIANG, Alice Wen-Chi LIANG, Anna P. LIANG, Barry C. LIANG
  • Patent number: 8735268
    Abstract: A method for fabricating a metal-oxide-semiconductor field-effect transistor includes the following steps. Firstly, a substrate is provided. A gate structure, a first spacer, a second spacer and a source/drain structure are formed over the substrate. The second spacer includes an inner layer and an outer layer. Then, a thinning process is performed to reduce the thickness of the second spacer, thereby retaining the inner layer of the second spacer. After a stress film is formed on the inner layer of the second spacer and the source/drain structure, an annealing process is performed. Afterwards, the stress film is removed.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: May 27, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Ching-Sen Lu, Wen-Han Hung, Tsai-Fu Chen, Tzyy-Ming Cheng
  • Patent number: 8698679
    Abstract: The present invention discloses a mark antenna used for receiving and transmitting a wireless signal. The mark antenna comprises a ground point, a feed point and a radiation part connecting to the ground point and the feed point, and particularly the radiation part is an identification mark, such that the appearance of the radiation part can provide identification information. With the light, thin, short and compact design concept, the mark antenna can be exposed to prevent the antenna from being compressed due to the small disposed area and overcome the difficulty of designing the antenna or a poor communication quality caused by the low performance of the antenna. In the present invention, the antenna is designed as a logo directly, such that the antenna can achieve the functions of identifying the appearance as well as transmitting and receiving the wireless signals.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: April 15, 2014
    Assignees: Inventec Appliances (Shanghai) Co. Ltd, Inventec Appliances Corp.
    Inventor: Wen-Han Lin
  • Patent number: 8673758
    Abstract: A method for fabricating a metal gate includes the following steps. First, a substrate having an interfacial dielectric layer above the substrate is provided. Then, a gate trench having a barrier layer is formed in the interfacial dielectric layer. A source layer is disposed above the barrier layer. Next, a process is performed to have at least one element in the source layer move into the barrier layer. Finally, the source layer is removed and a metal layer fills up the gate trench.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: March 18, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Cheng-Yu Ma, Wen-Han Hung
  • Patent number: 8664073
    Abstract: A method for fabricating complimentary metal-oxide-semiconductor field-effect transistor is disclosed. The method includes the steps of: (A) forming a first gate structure and a second gate structure on a substrate; (B) performing a first co-implantation process to define a first type source/drain extension region depth profile in the substrate adjacent to two sides of the first gate structure; (C) forming a first source/drain extension region in the substrate adjacent to the first gate structure; (D) performing a second co-implantation process to define a first pocket region depth profile in the substrate adjacent to two sides of the second gate structure; (E) performing a first pocket implantation process to form a first pocket region adjacent to two sides of the second gate structure.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: March 4, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Kun-Hsien Lee, Cheng-Tung Huang, Wen-Han Hung, Shyh-Fann Ting, Li-Shian Jeng, Meng-Yi Wu, Tzyy-Ming Cheng
  • Patent number: 8648425
    Abstract: A device includes a metal-oxide-semiconductor (MOS) device, which includes a gate electrode and a source/drain region adjacent the gate electrode. A first and a second contact plug are formed directly over and electrically connected to two portions of a same MOS component, wherein the same MOS component is one of the gate electrode and the source/drain region. The same MOS component is configured to be used as a resistor that is connected between the first and the second contact plugs.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: February 11, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Han Wang, Chen-Chih Wu, Sheng-Fang Cheng, Kuo-Ji Chen
  • Patent number: 8633978
    Abstract: A human face detection device includes a photosensitive element, a human face detection unit, and a skin color threshold generation unit. The photosensitive element is used for capturing a first image containing a first human face block. The human face detection unit compares the first image with at least one human face feature, so as to detect the first human face block. The skin color threshold generation unit is used for updating a skin color threshold value according to the detected first human face block. The skin color threshold value is used for filtering the first image signal to obtain a candidate region, the human face detection unit compares the candidate region with the at least one human face feature to obtain the first human face block, and the skin color threshold value determines whether the first human face block detected by the human face detection unit is correct.
    Type: Grant
    Filed: June 23, 2010
    Date of Patent: January 21, 2014
    Assignee: Pixart Imaging Inc.
    Inventors: Shu-Sian Yang, Ren-Hau Gu, Yi-Fang Lee, Ming-Tsan Kao, Teo-Chin Chiang, Chi-Chieh Liao, Wei-Ting Chan, Yu-Hao Huang, Wen-Han Yao
  • Publication number: 20140002172
    Abstract: A voltage generating circuit includes a first supply voltage node, a first switching device, a sub voltage generating circuit, and a second switching device. The first supply voltage node is configured to have a first supply voltage value, and is coupled with the first switching device. The sub voltage generating circuit is coupled in between the first switching device and the second switching device. The first switching circuit and the second switching circuit are configured to receive a control signal behaving based on the first supply voltage value and a second supply voltage value different from the first supply voltage value.
    Type: Application
    Filed: February 5, 2013
    Publication date: January 2, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Wen-Han WANG
  • Publication number: 20130342941
    Abstract: Some embodiments of the present disclosure relate to a low-power, area efficient ESD protection device that provides ESD protection to an ESD susceptible circuit. The ESD protection device has a trigger circuit with a resistor. The resistor has a first terminal connected to the first external pin and a second terminal connected directly to a gate of a SiGe based PMOS shunt transistor. The trigger circuit generates a trigger signal that drives the gate of the PMOS device to shunt power away from the ESD susceptible circuit when an ESD event is present. The SiGe based PMOS shunt transistor has a lower gate leakage than a conventional NMOS shunt transistors, thereby providing for an ESD circuit with a low leakage current at small gate lengths.
    Type: Application
    Filed: June 26, 2012
    Publication date: December 26, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Han Wang, Kuo-Ji Chen
  • Patent number: 8594318
    Abstract: When a number of users share one telephone number, the present invention indicates who the callee (the person the caller wants to talk to) is, with personalized rings and information shown on a display, so as to allow each user to quickly identify calls directed to him/her. A mobile phone user could inform the callee his/her intent and/or the urgency level of the call by selecting from options provided by the callee reflecting the callee's preferences.
    Type: Grant
    Filed: November 22, 2006
    Date of Patent: November 26, 2013
    Inventors: Bessy Wen-Han Liang, Alice Wen-Chi Liang, Anna P. Liang, Barry C. Liang
  • Patent number: 8594456
    Abstract: An image denoising method according to the present invention includes the steps of: sequentially selecting a pixel in an image as a current pixel; dynamically determining a current search block and a strength parameter; transferring the comparison block of each pixel in the current search block to a frequency domain; determining a current frequency basis; obtaining a similarity between each neighborhood pixel and the current pixel in the current search block according to the current frequency basis; determining a weighting of each neighborhood pixel related to the current pixel according to the strength parameter, and a distance and the current pixel in the current search block; and weighted averaging each neighborhood pixel and the current pixel in the current search block according to the weighting so as to obtain a reconstruction value of the current pixel.
    Type: Grant
    Filed: July 2, 2010
    Date of Patent: November 26, 2013
    Assignee: Pixart Imaging Inc
    Inventors: Shu Sian Yang, Chuan Hsin Lee, Wen Han Yao
  • Publication number: 20130300326
    Abstract: A motor driving device for protecting inrush current is disclosed, where the motor driving device includes a resistor, a capacitor, an electronic switch, a rectifier and a driving circuit. The capacitor is connected to the resistor in series. The electronic switch is connected to the resistor in parallel. The rectifier is connected to the resistor and the capacitor in parallel and is electrically connected to a power source. The driving circuit is connected to the resistor and the capacitor in parallel and is electrically connected to a motor.
    Type: Application
    Filed: February 7, 2013
    Publication date: November 14, 2013
    Applicant: DELTA ELECTRONICS, INC.
    Inventor: Wen-Han LAN