Abstract: A multilevel phase change memory element and operating method and electrodes, which are configured in a parallel structure to form a memory cell. A voltage-drive mode is employed to control and drive the memory element such that multilevel memory states may be achieved by imposing different voltage levels. The provided multilevel phase-change memory element has more bits and higher capacity than that of a memory element with a single phase-change layer.

Abstract: A phase-change memory layer and method for manufacturing the same and a phase-change memory cell are provided. The phase-change memory layer is crystallized by adding one or more heterogeneous crystals that do not react with phase-change materials as the crystal nucleus, so as to reduce the time for transforming to the crystalline state from the amorphous state.

Abstract: A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

Abstract: A phase change memory (PCM) cell and fabricating method thereof are provided. A phase change layer is etched into a tapered structure, and then a dielectric layer on the phase change layer is planarized, until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, when the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced; thereby the operation current is lowered.

Abstract: A semiconductor substrate having a first active region and a second active region for fabricating a first transistor and a second transistor is provided. A first gate structure and a second gate structure are formed on the first active region and the second active region and a first spacer is formed surrounding the first gate structure and the second gate structure. A source/drain region for the first transistor and the second transistor is formed. The first spacer is removed from the first gate structure and the second gate structure and a cap layer is disposed on the first transistor and the second transistor and the cap layer covering the second transistor is removed thereafter. An etching process is performed to form a recess in the substrate surrounding the second gate structure. An epitaxial layer is formed in the recess and the cap layer is removed from the first transistor.

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract: A positioning device of a dual direction cable reel is disclosed. The cable reel comprises a top cover, a pad, a reeling disc top cover, a reeling disc, a lead wire, a spring, a bottom cover and positioning member, characterized in that the reeling disc and the positioning element mounted at the outer side of the bottom cover alternately interact to achieve a positioning function, wherein the positioning element includes a peg and a pulling spring and the peg is pivotally mounted to the peg at the outer edge of the bottom cover, and the rear direction is a pulling spring to provide correct direction, and can swing in accordance with the operational rails at the bottom section of the reeling disc to provide an alternate engaging and disengaging swinging action.

Abstract: A positioning shaft of a dual direction cable reel is disclosed.

Abstract: A complementary metal-oxide-semiconductor (CMOS) device comprising a substrate, a first type of metal-oxide-semiconductor (MOS) transistor, a second type of MOS transistor, an etching stop layer, a first stress layer and a second stress layer is provided. The substrate has a first and a second active region. The first active region is isolated from the second active region through an isolation structure. The first type of MOS transistor is disposed in the first active region of the substrate and the second type of MOS transistor is disposed in the second active region of the substrate. The etching stop layer covers conformably the first type of MOS transistor, the second type of MOS transistor and the isolation structure. The first stress layer is disposed on the etching stop layer in the first active region and the second stress layer is disposed on the etching stop layer in the second active region.

Abstract: A complementary metal-oxide-semiconductor (CMOS) device comprising a substrate, a first type of metal-oxide-semiconductor (MOS) transistor, a second type of MOS transistor, an etching stop layer, a first stress layer and a second stress layer is provided. The substrate has a first active region and a second active region. The first active region is isolated from the second active region through an isolation structure. The first type of MOS transistor is disposed in the first active region of the substrate; the second type of MOS transistor is disposed in the second active region of the substrate. The etching stop layer covers conformably the first type of MOS transistor, the second type of MOS transistor and the isolation structure. The first stress layer is disposed on the etching stop layer in the first active region and the second stress layer is disposed on the etching stop layer in the second active region.

Abstract: A multi-media loudspeaker which includes a primary loudspeaker case connected with a transmission cable, a loudspeaker, a microphone, a headphone socket, and a volume control, a secondary loudspeaker case connected with the primary loudspeaker case via a cord, a retractable coiling cord device connected with the cord, the retractable coiling cord device comprising a front cover, a spiral spring, a sliding disc, a retraction cord, a positioning bead and a rear cover, and a cable reel connected with the transmission cable, the cable reel comprising an upper cover, a pad, a reeling disc, a spring, and a lower cover, whereby the multi-media loudspeaker can be used for converting electrical signals into sounds loud enough to be heard at a distance and converting sound waves into electrical energy thereby enabling the user to listen to the music and talk through the computer via the Internet.

Abstract: A computer mouse which includes a circuit board disposed within the body portion, a loudspeaker mounted on the circuit board, a microphone mounted on the circuit board, a switch mounted on the circuit board and extending upwardly out of the body portion, a volume control mounted on the circuit board and extending laterally out of the body portion, an electrical socket mounted on the circuit board, a cable provided with a USB connector, a loudspeaker connector, a microphone connector, and a cable reel connected with the cable, whereby the computer mouse can be used for converting electrical signals into sounds loud enough to be heard at a distance and converting sound waves into electrical energy thereby enabling the user to listen to the music and talk through the computer via the Internet.

Abstract: The present invention is directed to methods for identifying compounds that modulate apoptosis, directly or indirectly, as measured by changes in expression of the bbc3 gene or a reporter gene, or by changes in the apoptotic character of a cell. The present invention is also directed to methods for identifying compounds that modulate expression of the bbc3 gene and a method for identifying compounds that interact with a promoter of the bbc3 gene. The present invention is further directed to a method for modulating apoptosis in a cell, a method for modulating bbc3 gene expression in a cell, a process for making a modulator of apoptosis, and a process for making a modulator of bbc3 gene expression. Finally, the present invention is directed to compounds identified by each of the methods of this invention, and to promoters of the bbc3 gene and sequences homologous thereto.

Abstract: A telecommunication approach provides telephone service to subscribers on terminals registered on a mobile network that are consistent with the services provided to those subscribers at terminals on a fixed communication network. For instance, the subscriber on the terminals on the mobile network may have access to mid-call features and private dialing plans that are supported using elements on the fixed network, and calls placed to the subscribers at addresses (e.g., wireline numbers or SIP addresses) on the fixed network may be delivered to their terminals on the mobile network.

Abstract: The invention provides an integral liquid cooling computer housing including a computer housing, which is provided with an accommodating platform and a movable cover at one side thereof. Component devices of a liquid cooling system are installed to the accommodating platform without needing additional space outside the computer housing for fully utilizing available space as well as giving an appealing appearance. The movable cover is for covering the accommodating platform for concealing or exposing the accommodating platform, and for shielding against noises, thereby facilitating installation thereof and minimizing usage noises. The movable cover is configured with a plurality of ventilation holes for a liquid cooling system installed to the accommodating platform to discharge hot air out of the computer housing, thereby obtaining optimal heat dissipating effects.

Abstract: A manufacturing method and structure for better phase change memory characteristics by improving the interface and the hole-filling properties. The present invention can reduce the power consumption needed to operate and is easy to fabricate.

Abstract: A phase change memory with adjustable resistance ratio is disclosed, which includes a phase change layer and an interfacial layer formed to be in contact with each other, and at least two electrodes in contact with the phase change layer and the interfacial layer respectively. The contact sections between the two electrodes and the phase change layer and the interfacial layer define a contact area respectively, wherein, the area defined by the contact section between the electrode and the phase change layer is larger than the area defined by the contact section between the electrode and the interfacial layer.

Abstract: A headset having a built-in audio source and cable management mechanism is disclosed herein. The headset is composed of two loop-style earpieces and a cable connecting the two earpieces. One earpiece has a built-in audio source such as a MP3 player, an AM/FM receiver, and the like. The cable is for delivering audio signal from the audio source built in one earpiece to the other. The other earpiece has a built-in cable winder so that the cable could be pulled and fixed to a desired length. When the headset is not in use, a slight pull and release of the cable would allow the cable winder to retract the cable back into the earpiece.

Abstract: A method for fabricating an ultra-high tensile-stressed nitride film is disclosed. A PECVD process is first performed to deposit a transitional silicon nitride film over a substrate. The transitional silicon nitride film has a first concentration of hydrogen atoms. The transitional silicon nitride film is subjected to UV curing process for reducing the first concentration of hydrogen atoms to a second concentration of hydrogen atoms.

Abstract: A positioning device of a dual direction cable reel is disclosed. The cable reel comprises a top cover, a pad, a reeling disc top cover, a reeling disc, a lead wire, a spring, a bottom cover and positioning member, characterized in that the reeling disc and the positioning element mounted at the outer side of the bottom cover alternately interact to achieve a positioning function, wherein the positioning element includes a peg and a pulling spring and the peg is pivotally mounted to the peg at the outer edge of the bottom cover, and the rear direction is a pulling spring to provide correct direction, and can swing in accordance with the operational rails at the bottom section of the reeling disc to provide an alternate engaging and disengaging swinging action.