Abstract: A memory cell and method including a first electrode formed through a first opening in a first dielectric layer, a resistive layer formed on the first electrode, a spacing layer formed on the resistive layer, a second electrode formed on the resistive layer, and a second dielectric layer formed on the second electrode, the second dielectric layer including a second opening. The first dielectric layer formed on a substrate including a first metal layer. The first electrode and the resistive layer collectively include a first lip region that extends a first distance beyond the first opening. The second electrode and the second dielectric layer collectively include a second lip region that extends a second distance beyond the first opening. The spacing layer extends from the second distance to the first distance. The second electrode is coupled to a second metal layer using a via that extends through the second opening.

Abstract: An ultrathin microchip structure at least includes a flexible base material. The flexible base material includes an installation surface and a printed surface at an upper surface and a lower surface thereof, respectively. The installation surface is provided with one set or multiple sets of integrated circuits. Each of the integrated circuits at least includes a chip and at least one set of transceiver antenna. One or both of the installation surface and the printed surface of the flexible base material is/are applied with a nanometer film layer having characteristics of being waterproof, dustproof, wear resistant, and penetrable by the RF signal, thereby effectively simplifying the present invention as an ultrathin microchip.

Abstract: The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a non-planar portion, a resistive material layer conformally covering the non-planar portion of the bottom electrode; and, a top electrode on the resistive material layer. The via portion of the bottom electrode is embedded in a first RRAM stop layer. The non-planar portion of the bottom electrode has an apex and is centered above the via portion.

Abstract: One or more systems and methods for reshaping a hard mask are provided. A semiconductor arrangement comprises one or more structures formed from a layer according to a target dimension, such as a width criterion, a length criterion, a spacing criterion, or other design constraints. To form such a structure, a hard mask is formed over the layer. Responsive to a dimension, such as a width, of the hard mask not corresponding to the target dimension, a first hard mask portion is modified to create a modified hard mask comprising a modified first hard mask portion. In some embodiments, the first hard mask portion is trimmed to decrease the dimension or coated with a coating material to increase the dimension. An etch of the layer is performed through the modified hard mask to create an etched layer comprising an etched portion, such as the structure, corresponding to the target dimension.

Abstract: A multi chamber thin film deposition apparatus and a method for depositing films, is provided. Each chamber includes a three dimensional gas delivery system including process gases being delivered downwardly toward the substrate and laterally toward the substrate. A pumping system includes an exhaust port in each chamber that is centrally positioned underneath the substrate being processed and therefore the gas flow around all portions of the edge of the substrate are equally spaced from the exhaust port thereby creating a uniform gas flow profile which results in film thickness uniformity of films deposited on both the front and back surfaces of the substrate. The deposited films demonstrate uniform thickness on the front and back of the substrate and extend inwardly to a uniform distance on the periphery of the backside of the substrate.

Abstract: A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, a protection material and a second electrode. The first electrode has a top surface on the memory region. The resistance variable layer has at least a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection material surrounds the second portion of the resistance variable layer. The protection material is configurable to protect at least one conductive path in the resistance variable layer. The second electrode is disposed over the resistance variable layer.

Abstract: The invention introduces a method for operating interactive whiteboards, performed by a processing unit of a control node, which contains at least the following steps. A connected-device display region, a multi-screen layout region and a whiteboard display region are provided on an interactive display device. After detecting that an icon of the connected-device display region is dragged and dropped into a block of the multi-screen layout region, a network address associated with the icon is obtained. A TCP port number associated with the block of the connected-device display region, which contains the dropped icon, is obtained. A ready notification containing the TCP port number is transmitted to the network address. Screen data with the TCP port number is received. The screen data is displayed on a block of the whiteboard display region, which is associated with the block of the connected-device display region.

Abstract: An audio and video sharing method and system is provided. The audio and video sharing method includes initializing a plurality of audio capturing modules in response to a plurality of applications, capturing the first audio data from the first application and the second audio data from the second application, generating the first audio and video stream based on the first audio data, and transmitting the first audio and video stream in response to the first audio and video sharing request. Accordingly, the system separately captures the audio stream from the different applications, and after appropriately coding, transmits the corresponding audio stream to the corresponding user, thereby sharing the corresponding audio stream individually in response to the request of each user.

Abstract: An embodiment of the invention introduces a method for sharing applications, executed by a processing unit of a sharing apparatus, which contains at least the following steps. Application-sharing information is sent to a control node, wherein the application-sharing information regarding an application to be shared and a control-filtering policy of the application, thereby enabling the control node to search sharing apparatuses capable of providing services for a requesting apparatus and determine whether to transfer a control signal to the sharing apparatus according to the application-sharing information.

Abstract: Some embodiments relate to an integrated circuit device. The integrated circuit device includes a resistive random access memory (RRAM) cell, which includes a top electrode and a bottom electrode that are separated by a RRAM dielectric layer. The top electrode of the RRAM cell has a recess in its upper surface. A via is disposed over the RRAM cell and contacts the top electrode within the recess.

Abstract: The invention introduces a method for sharing applications between apparatuses, which contains at least the following steps. A processing unit of a first electronic apparatus discovers local applications to generate an application list, and sends the application list to a second electronic apparatus in a formatted message, wherein the application list contains at least paths storing the applications. After receiving an application path from the second electronic apparatus, the processing unit launches one corresponding application, generates an application window, and sends screen data containing at least the application window to the second electronic apparatus.

Abstract: A method for forming a resistive memory cell within a memory array includes forming a patterned stopping layer on a first metal layer formed on a substrate and forming a bottom electrode into features of the patterned stopping layer. The method further includes forming a resistive memory layer. The resistive memory layer includes a metal oxide layer and a top electrode layer. The method further includes patterning the resistive memory layer so that the top electrode layer acts as a bit line within the memory array and a top electrode of the resistive memory cell.

Abstract: A memory cell and method including a first electrode conformally formed through a first opening in a first dielectric layer, a resistive layer conformally formed on the first electrode, a spacing layer conformally formed on the resistive layer, a second electrode conformally formed on the resistive layer, and a second dielectric layer conformally formed on the second electrode, the second dielectric layer including a second opening. The first dielectric layer is formed on a substrate including a first metal layer. The first electrode and the resistive layer collectively include a first lip region that extends a first distance beyond the first opening. The second electrode and the second dielectric layer collectively include a second lip region that extends a second distance beyond the first opening. The spacing layer extends from the second distance to the first distance. The second electrode is coupled to a second metal layer using a via that extends through the second opening.

Abstract: The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a non-planar portion, a resistive material layer conformally covering the non-planar portion of the bottom electrode; and, a top electrode on the resistive material layer. The via portion of the bottom electrode is embedded in a first RRAM stop layer. The non-planar portion of the bottom electrode has an apex and is centered above the via portion.

Abstract: A method of forming a semiconductor structure includes depositing a first electrode material over a conductive structure and a dielectric layer, patterning the first electrode material to form a first electrode contacting the conductive structure, depositing a resistance variable layer over the first electrode and the dielectric layer, depositing a second electrode material over the resistance variable layer, and etching a portion of the second electrode material and the resistance variable layer to form a second electrode over a remaining portion of the resistance variable layer.

Abstract: The invention introduces a screencasting method, executed by a processing unit of a screencasting source, which contains at least the following steps. After the screencasting source connects to a screencasting receiver, a first screen image displayed on a display unit of the screencasting source is captured. Then, the first screen image and display area information of a first input component of the first screen image is transmitted to the screencasting receiver, thereby enabling the screencasting receiver to render a second screen image according to the first screen image and the display area information, where the second screen image contains at least a second input component including at least an input string.

Abstract: The invention introduces a screen-sharing method, executed by a processing unit of a screen-sharing source, which contains at least the following steps. Application windows being opened on a display unit are obtained. For each application window, screen-sharing receivers, which are connected to the screen-sharing source, are detected and items are appended to a system menu instance of the application window, where each item corresponds to one screen-sharing receiver.

Abstract: A method of forming a coating film over a substrate is provided. The method includes spinning the substrate. The method further includes providing a central coating liquid spray over a central portion of the substrate. The method also includes providing first coating liquid sprays over the substrate. The first coating liquid sprays surround the central coating liquid spray and are spaced apart from the central coating liquid spray by a same first distance.

Abstract: A pharmaceutical composition for inhibiting tumor metastasis is disclosed. The pharmaceutical composition includes a therapeutically effective amount of 7,7?-Dimethoxyagastisflavone (DMGF) and a pharmaceutically acceptable carrier. The present invention also discloses a use of DMGF for manufacturing a pharmaceutical composition applied to inhibit tumor metastasis. The application of the pharmaceutical composition and the use of the present invention are advantageous for inhibiting tumor metastasis efficiently.