Abstract: A method for forming a FinFET device structure and method for forming the same is provided. The method includes forming an isolation structure over a substrate and forming a first dielectric layer over the isolation structure. The method includes forming a gate structure in the first dielectric layer and forming a deep trench through the first dielectric layer and the isolation structure. The method also includes forming an S/D trench in the first dielectric layer and filling a metal material in the deep trench and the S/D trench to form a deep contact structure and the S/D contact structure. A bottom surface of the S/D contact structure is higher than a bottom surface of the deep contact structure.

Abstract: The disclosure describes various aspects of a cryogenic trapped-ion system. In an aspect, a method is described that includes bringing a chain of ions in a trap at a cryogenic temperature, the trap being a micro-fabricated trap, and performing quantum computations, simulations, or both using the chain of ions in the trap at the cryogenic temperature. In another aspect, a method is described that includes establishing a zig-zag ion chain in the cryogenic trapped-ion system, detecting a change in a configuration of the zig-zag ion chain, and determining a measurement of the pressure based on the detection in the change in configuration. In another aspect, a method is described that includes measuring a low frequency vibration, generating a control signal based on the measurement to adjust one or more optical components, and controlling the one or more optical components using the control signal.

Abstract: A method of making a semiconductor device includes depositing a TiN layer over a substrate. The method further includes doping a first portion of the TiN layer using an oxygen-containing plasma treatment. The method further includes doping a second portion of the TiN layer using a nitrogen-containing plasma treatment, wherein the second portion of the TiN layer directly contacts the first portion of the TiN layer. The method further includes forming a first metal gate electrode over the first portion of the TiN layer. The method further includes forming a second metal gate electrode over the second portion of the TiN layer, wherein the first metal gate electrode has a different work function from the second metal gate electrode, and the second metal gate electrode directly contacts the first metal gate electrode.

Abstract: Techniques are described for providing fast reroute for traffic in EVPN-VXLAN. For example, a backup PE device of an Ethernet segment is configured with an additional tunnel endpoint address (“reroute tunnel endpoint address”) for a backup path associated with a second split-horizon group that is different than a tunnel endpoint address and first split-horizon group for another path used for normal traffic forwarding. The backup PE device sends the reroute tunnel endpoint address to a primary PE device of the Ethernet segment, which uses the reroute tunnel endpoint address to configure a backup path to the backup PE device over the core network. For example, the primary PE device may install the reroute tunnel endpoint address within its forwarding plane and one or more operations to cause the primary PE device to encapsulate a VXLAN header including the reroute tunnel endpoint address when rerouting the packet along the backup path.

Abstract: The present invention provides a body-worn structure, and more particularly a body-worn structure that applies a containing structure to the body of an animal, including a person or pet, and uses a multifunctional structure for use by a user in various different circumstances. For example, the structure can be applied as a body protective device in an emergency situation in outdoor activities, such as riding a motorcycle, mountain-climbing, skiing, hand gliding, paragliding, and boating, when the body-worn structure is applied as a protective clothing, an airbag, airbag clothing, etc. Moreover, the body-worn structure is an all-in-one functional device, including use when taking a pet outdoors, when the structure can be applied as a pet knapsack, pet weatherproof clothing, pet carrier bag, and a fixing device for a pet droppings collection bag.

Abstract: An integrated stage for holding rapid test reagent cards includes two U-shaped sidewalls opposite to each other, a first receiving space, a second receiving space, and an elastic sheet. The U-shaped sidewalls cooperatively define the first receiving space. The second receiving space is formed in the first receiving space and is lower than the first receiving space. The elastic sheet is arranged on a short side of the first receiving space. The first receiving space is used for allowing the integrated stage to hold a first rapid test reagent card. The second receiving space is used for allowing the integrated stage to hold a second rapid test reagent card. The integrated stage utilizes the elastic sheet to hold and fix the first rapid test reagent card or the second rapid test reagent card.

Abstract: The present disclosure provides an ophthalmic composition comprising 4-(3-amino-1-(isoquinolin-6-ylamino)-1-oxopropan-2-yl)benzyl 2,4-dimethylbenzoate or its pharmaceutically acceptable salts; about 0.01% weight/volume to about 1.0% weight/volume of a buffer; and about 0.01% weight/volume to about 10% weight/volume of a tonicity agent.

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

Abstract: A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.

Abstract: Disclosed herein an apparatus and a method for detecting buried features using backscattered particles. In an example, the apparatus comprises a source of charged particles; a stage; optics configured to direct a beam of the charged particles to a sample supported on the stage; a signal detector configured to detect backscattered particles of the charged particles in the beam from the sample; wherein the signal detector has angular resolution. In an example, the methods comprises obtaining an image of backscattered particles from a region of a sample; determining existence or location of a buried feature based on the image.

Abstract: A method of fabricating a device includes providing a fin extending from a substrate, where the fin includes an epitaxial layer stack having a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing a portion of the epitaxial layer stack within a source/drain region of the semiconductor device to form a trench in the source/drain region that exposes lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers. After forming the trench, in some examples, the method further includes performing a dummy layer recess process to laterally etch ends of the plurality of dummy layers to form first recesses along a sidewall of the trench. In some embodiments, the method further includes conformally forming a cap layer along the exposed lateral surfaces of the plurality of semiconductor channel layers and within the first recesses.

Abstract: A ventilator airflow splitter is described herein that includes two to four connectors extending axially through two to four channels starting from a port insert of a single inlet connector and terminating at a port of each of the two to four connectors. The two to four connectors merge into the single inlet connector where the single inlet connector includes an internal cross-splitter individually dividing each of the two to four connectors internally, thereby separating the airflow between each of the two to four connectors such that the air is incapable of moving between connectors. The ventilator airflow splitter also includes gussets where each of the two to four connectors have a gusset individually attached and the gussets merge at the single inlet connector. Each of the two to four connectors are configured to be operatively connected to medical equipmentor a ventilator at the ports and the port insert of the single inlet connector.

Abstract: Gate spacer that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a gate stack disposed over a semiconductor layer and a gate spacer disposed on a sidewall of the gate stack. A source/drain feature is disposed in the semiconductor layer and adjacent the gate spacer. A low-k contact etch stop layer is disposed on a top surface and a sidewall of the gate spacer and a portion of the gate spacer is disposed between the low-k contact etch stop layer and the semiconductor layer. A source/drain contact is disposed on the source/drain feature and adjacent the low-k contact etch stop layer.

Abstract: A wafer cleaning module and a method for cleaning a wafer with the wafer cleaning module are disclosed. For example, the wafer cleaning module includes a wafer chuck to hold a wafer, an ozone source to provide ozone gas towards the wafer, and an ultraviolet (UV) lamp module to provide UV light. The UV lamp module includes a UV light source and a rotatable reflector around the UV light source. The rotatable reflector is movable to adjust an amount of UV light directed towards a surface of the wafer.

Abstract: In some cases, once Fast Reroute (FRR) has taken place (e.g., for MPLS protection), a further FRR is undesirable, and even detrimental. A mechanism to prevent a further FRR, once such a further FRR is determined to be potentially harmful, is described.

Abstract: Techniques are described for providing fast reroute for BUM traffic in EVPN. For example, a first provider edge (PE) device, elected as a designated forwarder (DF) of an Ethernet segment, configures a backup path using a label received from a second PE device of the Ethernet segment (e.g., backup DF) that identifies the second PE device as a “protector” of the Ethernet segment. For example, a routing component of the DF configures within a forwarding component a backup path to the second PE device, e.g., installing the label and operation(s) within the forwarding component to cause the forwarding component to add the label to BUM packets received from a core network. Therefore, when an access link to the local CE device has failed, the DF reroutes BUM packets from the core network via the backup path to the second PE device, which sends the BUM packets to the CE device.

Abstract: An electronic device includes a flexible substrate and a conductive wire. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. The metal portion includes a plurality of extending portions and a plurality of joint portions, and each of the openings is surrounded by two of the plurality of extending portions and two of the plurality of joint portions. A ratio of a sum of widths of the plurality of extending portions to a sum of widths of the plurality of joint portions is in a range from 0.8 to 1.2.

Abstract: An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.

Abstract: Methods include providing a first fin structure and a second fin structure each extending from a substrate. A first gate-all-around (GAA) transistor is formed on the first fin structure; the first GAA transistor has a channel region within a first plurality of nanostructures. A second GAA transistor is formed on the second fin structure; the second GAA transistor has a second channel region configuration. The second GAA transistor has a channel region within a second plurality of nanostructures. The second plurality of nanostructures is less than the first plurality of nanostructures.

Abstract: The present disclosure provides an ophthalmic composition comprising 4-(3-amino-1-(isoquinolin-6-ylamino)-1-oxopropan-2-yl)benzyl 2,4-dimethylbenzoate or its pharmaceutically acceptable salts; about 0.01% weight/volume to about 1.0% weight/volume of a buffer; and about 0.01% weight/volume to about 10% weight/volume of a tonicity agent.