Abstract: Self-aligned contacts are provided. In an embodiment the self-aligned contacts are formed by partially removing a first dielectric material from adjacent to a gate electrode and fully removing a second dielectric material from adjacent to the gate electrode. A conductive material is deposited into the regions of the removed first dielectric material and the second dielectric material, and the conductive material and metal gates are recessed below a spacer. A dielectric layer is deposited over the recessed conductive material and the recessed metal gates, and the self-aligned contacts are formed through the dielectric layer.

Abstract: The present invention relates to a spring reset device for a piston mechanism. In certain embodiments, the spring reset device includes: a connecting plate, a pull rod, a plurality of reset springs, and a plurality of brackets. The connecting plate has a plurality of connecting pins. Each of the reset springs has a first end, and a second end. Each of the brackets has a connecting pin. The spring reset device is positioned on a top end of a piston body. The piston body includes a piston cylinder body, a piston plate, a piston rod, and a cylinder cover. A lower side of the piston plate is connected to the piston rod through a thread. First end of each of reset springs is rotatably connected to a hook portion of connecting plate. Second end of each of reset springs is rotatably connected a hook portion of a corresponding bracket.

Abstract: The present invention relates to a steam powered nailing gun. In certain embodiments, the steam powered nailing gun includes a handle, a casing, a high pressure water pump, a piston mechanism, a nailing gun base, and a nail magazine. The piston mechanism is connected to the casing. One end of the piston mechanism is connected to the high pressure water pump, and another end is connected to nailing gun base. The nail magazine is disposed at a position corresponding to piston mechanism on the nailing gun base. A phase transition thermal storage device and a steam power generator are positioned inside casing having steam power generator inside phase transition thermal storage device. The steam power generator is connected to high pressure water pump and piston mechanism. The high pressure water pump is further connected to a water supply device 11 on the handle through a second water supply pipe.

Abstract: The present invention relates to a phase transition heat storage device. In certain embodiments, the phase transition heat storage device includes a housing, a phase transition material body, a plurality of heating devices, a temperature sensor, and a temperature controller. The phase transition material body is disposed inside the housing. The heating devices enter the housing and are implanted inside the phase transition material body. The temperature sensor has a first end and a second end. The temperature controller is disposed outside of the housing. The first end of the temperature sensor is disposed inside the phase transition material body, and the second end of the temperature sensor is connected to the temperature controller through a first wire. The heating devices are connected to the temperature controller through a second wire. The present invention also relates to a steam powered nailing gun having a phase transition heat storage device.

Abstract: A LDMOS transistor device includes a substrate including a first insulating structure formed therein, a gate formed on the substrate and covering a portion of the first insulating structure, a drain region and a source region formed in the substrate at two respective sides of the gate, a base region encompassing the source region, and a doped layer formed under the base region. The drain region and the source region include a first conductivity type, the base region and the doped layer include a second conductivity type, and the second conductivity type is complementary to the first conductivity type. A top of the doped layer contacts a bottom of the base region. A width of the doped layer is larger than a width of the base region.

Abstract: A method includes forming a semiconductor fin, forming a dummy gate on a top surface and sidewalls of the semiconductor fin, and removing the dummy gate to form a recess. The semiconductor fin is exposed to the recess. After the dummy gate is removed, an oxidation is performed on the semiconductor fin to form a condensed germanium-containing fin in the recess, and a silicon oxide layer on a top surface and sidewalls of the condensed germanium-containing fin. The method further includes forming a gate dielectric over the condensed germanium-containing fin, and forming a gate electrode over the gate dielectric.

Abstract: A touch display includes a plurality of pixels, a plurality of scan lines, a plurality of data lines, a plurality of first conducting layers, and a plurality of third conducting layers. The plurality of scan lines are coupled to the plurality of pixels. The plurality of data lines are coupled to the plurality of pixels and the plurality of first conducting layers to provide a touch driving signal. Each first conducting layer of the plurality of first conducting layers is configured to receive the touch driving signal. The plurality of third conducting layers is configured to output a touch sensing signal according to the touch driving signals outputted by the plurality of first conducting layers.

Abstract: A memory device is provided, which includes a plurality of gate pillar structures and a plurality of dielectric pillars extending alternately arranged along a same direction and embedding in a stack layer so that the stack layer divided into a plurality of stack structures.

Abstract: A cathode composite material includes a cathode active material and a coating layer coated on a surface of the cathode active material. The cathode active material includes a spinel type lithium nickel manganese oxide. The coating layer includes a lithium metal oxide having a crystal structure belonging to C2/c space group of the monoclinic crystal system. The present disclosure also relates to a lithium ion battery including the cathode composite material.

Abstract: A docking station including fixing base and at least one latching module is provided. The latching module includes a latching element, a first restoring element, a stopping element, a second restoring element and a pushing element. The first restoring element is connected to the latching element and the fixing base and drives the latching element to latch a tablet device. The stopping element is coupled to the latching element and has a recess. The second restoring element is connected to the stopping element and the fixing base and drives the stopping element to stop the latching element. The pushing element is adapted to be pushed and inserted into the recess to drive the stopping element to move away from the latching element, and the tablet device is adapted to be released from the latching element by pushing the latching element after the stopping element moves away from the latching element.

Abstract: Provided are improved semiconductor memory devices and method for manufacturing such semiconductor memory devices. A method may incorporate the formation of silicide regions in a semiconductor. The method may allow for a semiconductor with a silicide layer with improved resistance and reduced silicide bridge formation.

Abstract: A display device having a speaker module includes a display, an ultrasonic speaker and an adjustment module. The speaker module includes at least one first speaker module and at least one second speaker module. The first speaker module is disposed at the display and adapted to emit a first ultrasonic wave. The second speaker module is disposed at the display and adapted to emit a second ultrasonic wave. The first ultrasonic wave and the second ultrasonic wave are intersected to form an audible region. The adjustment module is adapted to control the first speaker module and the second speaker module to rotate relative to the display, so as to drive the audible region to target a user.

Abstract: A docking station including fixing base and at least one latching module is provided. The latching module includes a latching element, a first restoring element, a stopping element, a second restoring element and a pushing element. The first restoring element is connected to the latching element and the fixing base and drives the latching element to latch a tablet device. The stopping element is coupled to the latching element and has a recess. The second restoring element is connected to the stopping element and the fixing base and drives the stopping element to stop the latching element. The pushing element is adapted to be pushed and inserted into the recess to drive the stopping element to move away from the latching element, and the tablet device is adapted to be released from the latching element by pushing the latching element after the stopping element moves away from the latching element.

Abstract: The disclosure provides a method of forming a transistor. In this method, a dummy gate structure is formed over a semiconductor substrate. Source/drain regions are then formed in the semiconductor substrate such that a channel region, which is arranged under the dummy gate structure in the semiconductor substrate, separates the source/drains from one another. After the source/drain regions have been formed, the dummy gate structure is removed. After the dummy gate structure has been removed, a surface region of the channel region is removed to form a channel region recess. A replacement channel region is then epitaxially grown in the channel region recess.

Abstract: The present invention provides for compounds of Formula (I) and various embodiments thereof, and compositions comprising compounds of Formula (I) and various embodiments thereof. In compounds of Formula I, the groups R1, R2, R3, R4, R5, R6 and R7 have the meaning as described herein. The present invention also provides for methods of using compounds of Formula I and compositions comprising compounds of Formula (I) as DLK inhibitors and for treating neurodegeneration diseases and disorders.

Abstract: Some embodiments of the present disclosure provide a semiconductor structure, including a substrate and a regrowth region. The substrate is made of a first material with a first lattice constant, and the regrowth region is made of the first material and a second material, having a lattice constant different from the first lattice constant. The regrowth region is partially positioned in the substrate. The regrowth region has a “tip depth” measured vertically from a surface of the substrate to a widest vertex of the regrowth region, and the tip depth being less than 10 nm. The regrowth region further includes a top layer substantially made of the first material, and the top layer has substantially the first lattice constant.

Abstract: A method includes forming Shallow Trench Isolation (STI) regions in a semiconductor substrate and a semiconductor strip between the STI regions. The method also include replacing a top portion of the semiconductor strip with a first semiconductor layer and a second semiconductor layer over the first semiconductor layer. The first semiconductor layer has a first germanium percentage higher than a second germanium percentage of the second semiconductor layer. The method also includes recessing the STI regions to form semiconductor fins, forming a gate stack over a middle portion of the semiconductor fin, and forming gate spacers on sidewalls of the gate stack. The method further includes forming fin spacers on sidewalls of an end portion of the semiconductor fin, recessing the end portion of the semiconductor fin, and growing an epitaxial region over the end portion of the semiconductor fin.

Abstract: A bifunctional compound and a method for manufacturing the same are revealed. The structural formula of the compound includes two main functional groups. One functional group is a diamide dithiolate (N2S2) ligand able to bind with radioisotopes. The other functional group is polybasic carboxylic acid that binds to biochemical substances. Based on properties of the above two functional groups, the compound of the present invention can be used for preparation of radiopharmaceuticals such as radiotracter for disease diagnosis or radioactive therapeutic agent for disease treatment.

Abstract: A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.

Abstract: The disclosure relates to a semiconductor device. An exemplary structure for a semiconductor device comprises a nanowire structure comprising a channel region between a source region and a drain region; and a metal gate surrounding a portion the channel region, wherein the metal gate comprising a first gate portion adjacent to the source region having a first thickness and a second gate portion adjacent to the drain region having a second thickness less than the first thickness.