Abstract: An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.

Abstract: A single round advanced encryption standard circuit module includes a substitution byte/inverse substitution byte unit, configured to substitute elements of an input state array to generate an output state array and to respectively generate a first state array, a plurality of second state arrays, a third state array, a plurality of fourth state arrays and the output state array according to a first tier circuit unit, a second tier circuit unit, a third tier circuit unit, a fourth tier circuit unit and a fifth tier circuit unit; wherein the first state array, the plurality of second state arrays, the third state array and the plurality of fourth state arrays are represented by register-transfer level codes; wherein the substitution byte/inverse substitution byte unit is implemented by composite field arithmetic of sharing operators and operands.

Abstract: A semiconductor package device includes a wiring structure, a semiconductor chip and an encapsulant. The semiconductor chip is electrically connected to the wiring structure. The encapsulant is disposed on the wiring structure and covers the semiconductor chip. A roughness (Ra) of a surface of the encapsulant is about 5 nm to about 50 nm.

Abstract: A semiconductor device package includes an electronic component and a substrate. The electronic component has a first surface and a second surface. The substrate is connected to the first surface of the electronic component through an adhesive layer. The substrate includes a first antenna disposed over the second surface of the electronic components through the adhesive layer.

Abstract: A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first module, a second module, a first intermediate circuit layer, a first conductive transmission path and a second conductive transmission path. The second module is stacked on the first module. The first intermediate circuit layer is arranged between the first module and the second module. The first conductive transmission is configured to electrically connect the first semiconductor module with the first intermediate circuit layer. The second conductive transmission path is configured to electrically connect the first intermediate circuit layer with the second semiconductor module.

Abstract: A package structure includes a base material, at least one electronic device, at least one encapsulant and a plurality of dummy pillars. The electronic device is electrically connected to the base material. The encapsulant covers the electronic device. The dummy pillars are embedded in the encapsulant. At least two of the dummy pillars have different heights.

Abstract: A cleaning robot includes a main body and a cleaning module. The main body is configured to move on a floor along a travelling direction. The cleaning module includes a first shaft and some first roller sets. The first shaft is connected with the main body. The first shaft extends along a first axis perpendicular to the travelling direction. The first roller sets are separated from each other. Each first roller set includes a first bearing, a first tire and a first flexible structure. The first shaft penetrates through the first bearing. The first tire includes a first cleaning surface configured to abut against the floor. The first flexible structure includes a first inner surface and a first outer surface. The first inner surface abuts against the first bearing. The first outer surface abuts against the first tire. The first flexible structure has a first elasticity.

Abstract: A cleaning equipment includes a first take-up reel, a first supply reel, a frame, a first cleaning film, and a transmission assembly. The frame includes an inner space accommodating the first take-up reel and the first supply reel side by side and an outer surface having at least one gap communicating with the inner space. The first cleaning film has a supply part on the first supply reel, a take-up part on the first take-up reel, and a middle part at least partially covering the outer surface of the frame. Two ends of the middle part enter the inner space through the at least one gap and are connected to the supply part and the take-up part, respectively. The transmission assembly is coupled to the first supply reel and the first take-up reel and drives at least one of the first supply reel and the first take-up reel to rotate.

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

Abstract: A package structure and a circuit layer structure are provided in the present disclosure. The package structure includes a wiring structure, a first electronic device, a second electronic device and at least one dummy trace. The wiring structure includes a plurality of interconnection traces. The first electronic device and the second electronic device are disposed on the wiring structure, and electrically connected to each other through the interconnection traces. The dummy trace is adjacent to the interconnection traces. A mechanical strength of the at least one dummy trace is less than a mechanical strength of one of the interconnection traces.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a lower conductive structure, a first semiconductor device and a second semiconductor device. The upper conductive structure is disposed on the lower conductive structure. The second semiconductor device is electrically connected to the first semiconductor device by a first path in the upper conductive structure. The lower conductive structure is electrically connected to the first semiconductor device through a second path in the upper conductive structure under the first path.

Abstract: A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and a plurality of conductive through vias. The conductive structure includes a dielectric layer, a circuit layer in contact with the dielectric layer, a plurality of dam portions and an outer metal layer. The dam portions extend through the dielectric layer. The dam portion defines a through hole. The outer metal layer is disposed adjacent to a top surface of the dielectric layer and extends into the through hole of the dam portion. The conductive through vias are disposed in the through holes of the dam portions and electrically connecting the circuit layer.

Abstract: An operation method of a semiconductor removing apparatus includes moving a semiconductor structure to a stage, wherein the semiconductor structure includes a lower substrate, a cap, and a micro electro mechanical system (MEMS) structure between the lower substrate and the cap, and the cap has a diced portion; pulling, by a clamp assembly, a tape of a tape roll from a first side of the stage to a second side of the stage opposite to the first side, such that the tape is attached to the cap of the semiconductor structure; and pulling, by the clamp assembly, the tape of the tape roll from the second side of the stage back to the first side of the stage, such that the diced portion of the cap separates from the semiconductor structure.

Abstract: An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

Abstract: A single round advanced encryption standard circuit module includes a substitution byte/inverse substitution byte unit, configured to substitute elements of an input state array to generate an output state array and to respectively generate a first state array, a plurality of second state arrays, a third state array, a plurality of fourth state arrays and the output state array according to a first tier circuit unit, a second tier circuit unit, a third tier circuit unit, a fourth tier circuit unit and a fifth tier circuit unit; wherein the first state array, the plurality of second state arrays, the third state array and the plurality of fourth state arrays are represented by register-transfer level codes; wherein the substitution byte/inverse substitution byte unit is implemented by composite field arithmetic of sharing operators and operands.

Abstract: An operation method of a semiconductor removing apparatus includes moving a semiconductor structure to a stage, wherein the semiconductor structure includes a lower substrate, a cap, and a micro electro mechanical system (MEMS) structure between the lower substrate and the cap, and the cap has a diced portion; pulling, by a clamp assembly, a tape of a tape roll from a first side of the stage to a second side of the stage opposite to the first side, such that the tape is attached to the cap of the semiconductor structure; and pulling, by the clamp assembly, the tape of the tape roll from the second side of the stage back to the first side of the stage, such that the diced portion of the cap separates from the semiconductor structure.

Abstract: A method for performing memory access of a Flash cell of a Flash memory includes: performing a plurality of sensing operations respectively corresponding to a plurality of sensing voltages to generate a first digital value and a second digital value of the Flash cell, the second digital value representing at least one candidate threshold voltage of the Flash cell; determining a threshold voltage of the Flash cell according to whether the at least one candidate threshold voltage is high or low; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.

Abstract: A package structure and a circuit layer structure are provided in the present disclosure. The package structure includes a wiring structure, a first electronic device, a second electronic device and at least one dummy trace. The wiring structure includes a plurality of interconnection traces. The first electronic device and the second electronic device are disposed on the wiring structure, and electrically connected to each other through the interconnection traces. The dummy trace is adjacent to the interconnection traces. A mechanical strength of the at least one dummy trace is less than a mechanical strength of one of the interconnection traces.