Abstract: A wiring structure includes a first dielectric layer, a first circuit layer, a second dielectric layer and a conductive via. The first dielectric layer defines at least one through hole. The first circuit layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer to cover the first circuit layer, wherein a first portion of the second dielectric layer is disposed in the through hole of the first dielectric layer. The conductive via extends through the first portion of the second dielectric layer in the through hole of the first dielectric layer, and is electrically isolated from the first circuit layer.

Abstract: An optical device package includes a semiconductor substrate, and an optical device. The semiconductor substrate has a first surface, a second surface different in elevation from the first surface, and a profile connecting the first surface to the second surface. A surface roughness of the profile is greater than a surface roughness of the second surface. The optical device is disposed on the second surface and surrounded by the profile.

Abstract: A method for performing data-compression management in a storage server may include: receiving data from a host device; performing entropy detection on a plurality of sets of partial data to generate entropy detection values of the plurality of sets of partial data, respectively; classifying the plurality of sets of partial data according to the entropy detection values of the plurality of sets of partial data, respectively, to perform data compression on at least one portion of the plurality of sets of partial data through a plurality of data compression modules, respectively, wherein the plurality of data compression modules correspond to different compression capabilities, respectively; and storing the plurality of sets of partial data into at least one storage device of the storage server and recording address mapping information of the plurality of sets of partial data, respectively. An associated apparatus is also provided.

Abstract: A semiconductor device package includes an electronic component. The electronic component has an active surface, a back surface opposite to the active surface, and a lateral surface connected between the active surface and the back surface. The electronic component has an electrical contact disposed on the active surface. The semiconductor device package also includes a redistribution layer (RDL) contacting the back surface of the electronic component, a first dielectric layer surrounding the electrical contact on the active surface of the electronic component, and a second dielectric layer surrounding the lateral surface of the electronic component and the first dielectric layer. The second dielectric layer has a first sidewall in contact with the lateral surface of the electronic component and a second sidewall opposite to the first sidewall. The second sidewall of the second dielectric layer has a first portion proximal to the RDL and a second portion distal from the RDL.

Abstract: A server device includes a case, first, second and third hard disk brackets and a first cable management cover. The case includes a main part and an expansion part disposed on the main part. The first hard disk bracket is fixed to the expansion part. The second and third hard disk brackets are pivotably disposed on the main part. A first cable management space is formed between each of two opposite exterior surfaces of the second hard disk bracket and each of two opposite interior surfaces of the main part. The second hard disk bracket is between the first and third hard disk brackets. A second cable management space is between a bottom surface of the third hard disk bracket and a supporting surface of the main part. A first cable management cover is in one of the first cable management spaces and fixed to the main part.

Abstract: A semiconductor device package includes a dielectric layer and a stacking conductive structure. The dielectric layer includes a first surface. The stacking conductive structure is disposed on the first surface of the dielectric layer. The stacking conductive structure includes a first conductive layer disposed on the first surface of the dielectric layer, and a second conductive layer stacked on the first conductive layer. A first surface roughness of the first surface of the dielectric layer is larger than a second surface roughness of a top surface of the first conductive layer, and the second surface roughness of the top surface of the first conductive layer is larger than a third surface roughness of a top surface of the second conductive layer.

Abstract: A semiconductor package device includes a wiring structure, a semiconductor chip and an encapsulant. The semiconductor chip is electrically connected to the wiring structure. The encapsulant is disposed on the wiring structure and covers the semiconductor chip. A roughness (Ra) of a surface of the encapsulant is about 5 nm to about 50 nm.

Abstract: A package structure includes a base material, at least one electronic device, at least one dummy pillar and an encapsulant. The electronic device is electrically connected to the base material. The dummy pillar is disposed on the base material. The encapsulant covers the electronic device and a top end of the dummy pillar.

Abstract: An interconnection structure includes a first dielectric layer and a second dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The second dielectric layer has a first surface and a second surface, both facing toward the first dielectric layer. The first surface of the second dielectric layer is recessed from the second surface of the second dielectric layer and defines a recess. A portion of the first dielectric layer is disposed within the recess.

Abstract: A server device includes a case, first, second and third hard disk brackets and a first cable management cover. The case includes a main part and an expansion part disposed on the main part. The first hard disk bracket is fixed to the expansion part. The second and third hard disk brackets are pivotably disposed on the main part. A first cable management space is formed between each of two opposite exterior surfaces of the second hard disk bracket and each of two opposite interior surfaces of the main part. The second hard disk bracket is between the first and third hard disk brackets. A second cable management space is between a bottom surface of the third hard disk bracket and a supporting surface of the main part. A first cable management cover is in one of the first cable management spaces and fixed to the main part.

Abstract: A server device comprising a chassis, a first hard disk drive frame and a second hard disk drive frame. The first hard disk drive frame is fixed on the chassis. The first hard disk drive frame has at least one first opening exposed to the outside. The second hard disk drive frame is pivotally disposed on the chassis and movable between an in-use position and an inclined position. The second hard disk drive frame has at least one second opening. When the second hard disk drive frame is in the in-use position, the at least one second opening of the second hard disk drive frame is covered by the first hard disk drive frame. When the second hard disk drive frame is in the inclined position, the at least one second opening of the second hard disk drive frame is exposed to the outside.

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

Abstract: Methods and apparatus for physical vapor deposition are provided. The apparatus, for example, includes A PVD apparatus that includes a chamber including a chamber wall; a magnetron including a plurality of magnets configured to produce a magnetic field within the chamber; a pedestal configured to support a substrate; and a target assembly comprising a target made of gold and supported on the chamber wall via a backing plate coupled to a back surface of the target so that a front surface of the target faces the substrate, wherein a distance between a back surface formed in a recess of the backing plate and a bottom surface of the plurality of magnets is about 3.95 mm to about 4.45 mm, and wherein a distance between the front surface of the target and a front surface of the substrate is about 60.25 mm to about 60.75 mm.

Abstract: A method for performing deduplication management with aid of a command-related filter and associated apparatus are provided. The method may include: utilizing at least one program module among multiple program modules running on a host device within the storage server to control the storage server to write multiple sets of user data of a user of the storage server into a storage device layer of the storage server, and utilizing a fingerprint-based deduplication management module among the multiple program modules to create and store multiple fingerprints into a fingerprint storage of the storage server to be respective representatives of the multiple sets of user data at the storage server, for minimizing calculation loading regarding deduplication control; and utilizing the command-related filter to at least convert a set of commands into a single command to eliminate unnecessary command(s), for executing the single command rather than all of the set of commands.

Abstract: A semiconductor device package includes a first substrate and a second substrate arranged above the first substrate. A first connector is disposed on the first substrate, and a first conductor passes through the second substrate and connects to the first connector.

Abstract: A semiconductor assembly includes a first wiring structure, a first semiconductor die and a first electronic element. The first wiring structure has a first surface. The first semiconductor die is disposed on the first surface of the first wiring structure. The first electronic element is electrically connected to the first wiring structure. The first electronic element includes a first metal layer, a second metal layer and a dielectric material interposed between the first metal layer and the second metal layer. The first metal layer and the second metal layer are substantially perpendicular to the first surface of the first wiring structure.

Abstract: A server configured to accommodate a storage device includes a chassis, an electronic component, a first positioning pin, a second positioning pin, and a slide rail. The chassis includes a first bottom plate, a first side plate, a first side wall, a first partition and a second partition that are disposed on the first bottom plate. The first bottom plate is divided into a first area, a second area and a third area. The third area is configured for the storage device to be placed thereon. The electronic component is disposed in the first area and configured to be electrically connected to the storage device. The first positioning pin is disposed on the first side wall. The second positioning pin is disposed in the third area. The slide rail has a first positioning groove and is detachably disposed on the first positioning pin via the first positioning groove.

Abstract: A semiconductor package structure includes a semiconductor die having an active surface, a conductive bump electrically coupled to the active surface, and a dielectric layer surrounding the conductive bump. The conductive bump and the dielectric layer form a planar surface at a distal end of the conductive bump with respect to the active surface. The distal end of the conductive bump is wider than a proximal end of the conductive bump with respect to the active surface.

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

Abstract: A semiconductor package includes a substrate, an electronic component and a first dilatant layer. The electronic component is disposed on the substrate. The electronic component has a top surface, a bottom surface opposite to the top surface and a lateral surface extending between the top surface and the bottom surface. The first dilatant layer is disposed on the top surface of the electronic component and extends along the lateral surface of the electronic component.