Abstract: A method of making a semiconductor device includes comparing a thickness profile of a surface of a wafer with a reference value using a control unit. The method further includes transmitting a control signal to an adjustable nozzle based on the comparison of the thickness profile and the reference value. The method further includes rotating the adjustable nozzle about a longitudinal axis of the adjustable nozzle in response to the control signal.

Abstract: A semiconductor substrate and a method of manufacturing the same are provided. The semiconductor substrate includes a dielectric layer, at least one first conductive trace, and a conductive via. The dielectric layer has a first dielectric surface and a second dielectric surface opposite to the first dielectric surface. The first conductive trace is disposed adjacent to the first dielectric surface of the dielectric layer. The conductive via is disposed adjacent to the second dielectric surface of the dielectric layer and connected to the first conductive trace, where the conductive via and the first conductive trace are connected at a first interface leveled with about a half thickness of the dielectric layer.

Abstract: A method for performing memory access of a Flash cell of a Flash memory includes: performing a first sensing operation corresponding to a first sensing voltage to generate a first digital value of the Flash cell; according to a result of the first sensing operation, performing a plurality of second sensing operations to generate a second digital value of the Flash cell representing at least one candidate threshold voltage of the Flash cell; determining the threshold voltage of the memory Flash cell according to the at least one candidate threshold voltage; determining soft information of a bit stored in the Flash cell according to the threshold voltage of the Flash cell; and using the soft information to perform soft decoding.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a lower conductive structure, a first semiconductor device and a second semiconductor device. The upper conductive structure is disposed on the lower conductive structure. The second semiconductor device is electrically connected to the first semiconductor device by a first path in the upper conductive structure. The lower conductive structure is electrically connected to the first semiconductor device through a second path in the upper conductive structure under the first path.

Abstract: An overcurrent protection method is provided. The overcurrent protection method is applied to a USB with a PD function. The overcurrent protection method includes the steps of converting an input voltage into a first voltage to provide power to the first electronic device; determining whether the working current of the first electronic device is greater than a first default value; determining whether the working current of the first electronic device is greater than a second default value; in response to the working current being greater than the first default value, a first sensing signal is generated to disable a switch and to form an open circuit between the first electronic device and the second electronic device; and in response to the working current being greater than the second default value, conversion of the input voltage into the first voltage is stopped.

Abstract: A semiconductor device package includes a first electronic component having a first surface and a second surface opposite the first surface. The semiconductor device package further includes a first pad disposed on the first surface of the first electronic component. The first pad has a first surface facing away from the first surface of the first electronic component, a second surface opposite the first surface of the first pad, and a lateral surface extended between the first surface of the first pad and the second surface of the first pad. The semiconductor device package further includes a second pad disposed on the first surface of the first pad. The second pad has a first surface facing away from the first surface of the first pad, a second surface opposite the first surface of the second pad, and a lateral surface extended between the first surface of the second pad and the second surface of the second pad.

Abstract: A high density plasma chemical vapor deposition (HDP CVD) chamber includes a nozzle including a base having a hollow center portion for conducting gas; a tip coupled to the base and having an opening formed therein for conducting gas from the base to the exterior of the nozzle. The HDP CVD chamber further includes a baffle positioned in a top portion of the HDP CVD chamber, wherein the baffle is equipped with an adjustable baffle nozzle.

Abstract: A package structure and a circuit layer structure are provided in the present disclosure. The package structure includes a wiring structure, a first electronic device, a second electronic device and at least one dummy trace. The wiring structure includes a plurality of interconnection traces. The first electronic device and the second electronic device are disposed on the wiring structure, and electrically connected to each other through the interconnection traces. The dummy trace is adjacent to the interconnection traces. A mechanical strength of the at least one dummy trace is less than a mechanical strength of one of the interconnection traces.

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

Abstract: A semiconductor device package includes an electronic component and a substrate. The electronic component has a first surface and a second surface. The substrate is connected to the first surface of the electronic component through an adhesive layer. The substrate includes a first antenna disposed over the second surface of the electronic components through the adhesive layer.

Abstract: An optical device package includes a semiconductor substrate, and an optical device. The semiconductor substrate has a first surface, a second surface different in elevation from the first surface, and a profile connecting the first surface to the second surface. A surface roughness of the profile is greater than a surface roughness of the second surface. The optical device is disposed on the second surface and surrounded by the profile.

Abstract: A semiconductor package includes a substrate, an electronic component and a first dilatant layer. The electronic component is disposed on the substrate. The electronic component has a top surface, a bottom surface opposite to the top surface and a lateral surface extending between the top surface and the bottom surface. The first dilatant layer is disposed on the top surface of the electronic component and extends along the lateral surface of the electronic component.

Abstract: A package structure includes a substrate, a first electronic component, a second electronic component, a third electronic component and a connection component. The substrate includes a first surface and a second surface opposite the first surface. The first electronic component is disposed at the substrate and has a first active surface exposed from the second surface of the substrate. The second electronic component includes a second active surface facing the first active surface of the first electronic component. The second active surface of the second electronic component is electrically connected to the first active surface of the first electronic component. The third electronic component includes a third active surface facing the first active face of the first electronic component. The connection component electrically connects the third active surface of the third electronic component to the first active surface of the first electronic component. The connection component has at least two bendings.

Abstract: A semiconductor device package includes a substrate, a first electronic component and a first encapsulant. The substrate has a first surface and a second surface opposite to the first surface. The first electronic component is disposed on the first surface of the substrate. The first encapsulant is disposed on the first surface of the substrate and covers the first electronic component. The first encapsulant has a first surface facing away the first surface of the substrate and includes a recess at an edge of the first surface of the first encapsulant.

Abstract: A semiconductor device package includes a circuit layer and a first antenna structure. The circuit layer includes a first surface, and a second surface opposite to the first surface. The first antenna structure is disposed on the first surface and electrically connected to the circuit layer. The first antenna structure includes a first patch, a second patch, a third patch, a first dielectric layer and a second dielectric layer. The second patch is disposed on the first patch. The first dielectric layer has a first dielectric constant (Dk), and is disposed between the first patch and the second patch. The third patch is disposed on the second patch. The second dielectric layer has a second dielectric constant and is disposed between the second patch and the third patch. The first dielectric constant is smaller than the second dielectric constant.

Abstract: A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and a plurality of conductive through vias. The conductive structure includes a dielectric layer, a circuit layer in contact with the dielectric layer, a plurality of dam portions and an outer metal layer. The dam portions extend through the dielectric layer. The dam portion defines a through hole. The outer metal layer is disposed adjacent to a top surface of the dielectric layer and extends into the through hole of the dam portion. The conductive through vias are disposed in the through holes of the dam portions and electrically connecting the circuit layer.

Abstract: A method for performing data-accessing management in a storage server and associated apparatus such as a host device, a storage device, etc. are provided. The method includes: in response to a client request of writing a first set of data into the storage server, utilizing the host device within the storage server to trigger broadcasting an internal request corresponding to the client request toward each storage device of a plurality of storage devices within the storage server; and in response to the internal request corresponding to the client request, utilizing said each storage device of the plurality of storage devices to search for the first set of data in said each storage device to determine whether the first set of data has been stored in any storage device, for controlling the storage server completing the client request without duplication of the first set of data within the storage server.

Abstract: A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first module, a second module, a first intermediate circuit layer, a first conductive transmission path and a second conductive transmission path. The second module is stacked on the first module. The first intermediate circuit layer is arranged between the first module and the second module. The first conductive transmission is configured to electrically connect the first semiconductor module with the first intermediate circuit layer. The second conductive transmission path is configured to electrically connect the first intermediate circuit layer with the second semiconductor module.

Abstract: A semiconductor package structure includes a first semiconductor die, a second semiconductor die, a third semiconductor die and an external contact. The second semiconductor die is disposed adjacent to the first semiconductor die. The third semiconductor die electrically connects the first semiconductor die and the second semiconductor die. The external contact is electrically connected to the third semiconductor die. An electrical path between the third semiconductor die and the external contact extends through a space between the first semiconductor die and the second semiconductor die.

Abstract: A semiconductor device package includes a first substrate and a second substrate arranged above the first substrate. A first connector is disposed on the first substrate, and a first conductor passes through the second substrate and connects to the first connector.