Abstract: Aspects of the present disclosure provide systems and methods for supporting multi-layer data transmission. An apparatus (e.g. user equipment), upon request of a network device (e.g. base station), may generate a channel state information (CSI) report based on measurement of synchronization signal-physical broadcast channel (SS-PBCH) blocks (SSBs) transmitted over multiple antenna ports. The CSI report may include information related to apparatus-specific CSI and/or information indicative of quality of sub-channels. The network device may transmit configuration information related to the CSI report, measurement configuration of the SSBs, and/or configurations for supporting early MIMO transmission.

Abstract: A dual-band antenna structure includes a ground terminal, an impedance-matching terminal, a radiation terminal, and a signal feed-in terminal. The ground terminal includes a body. The impedance-matching terminal is bent and extended from one side of the body, and connected perpendicularly to the body. The radiation terminal is bent and extended from one side of the impedance-matching terminal, and connected perpendicularly to the impedance-matching terminal. The signal feed-in terminal is bent and extended from one side of the radiation terminal, and connected perpendicularly to the radiation terminal, and connected to the impedance-matching terminal on a same side, and not connected to the ground terminal. A length of the impedance-matching terminal is shortened to increase an area of the radiation terminal and shorten a distance between the ground terminal and the radiation terminal, so the inverted F-shaped antenna structure is arranged inside electronic apparatuses with limited height and space.

Abstract: Methods and devices utilizing artificial intelligence (AI) or machine learning (ML) for customization of a device specific air interface configuration in a wireless communication network are provided. An over the air information exchange to facilitate the training of one or more AI/ML modules involves the exchange of AI/ML capability information identifying whether a device supports AI/ML for optimization of the air interface.

Abstract: A computer-implemented method for receiving, by a processor set, a workload for processing. The processor set may further collect historical data and real-time data related to processing the received workload and generate a feature map by investigating the received workload, the historical data, and the real-time data. The processor set may further divide the workload into workload steps and assign each workload step to one of a plurality of groups. System resources may also be calculated for each of the workload steps. The processor set trains a machine learning model to determine influence factors for each of the plurality of groups, and then, the processor set reallocates the workload steps based on the calculated system resources and the influence factors.

Abstract: A thermal module including a heat sink and a projector are provided. The heat sink includes a body and heat sink fins. The body includes a fixed plate and partition plates. The fixed plate has a first surface, a second surface and a third surface. The first surface is opposite to the second surface, and the third surface is connected to the first and second surfaces. Spaces form between the partition plates, and the heat sink fin is disposed correspondingly in each space. Each heat sink fin has a corrugated structure with multiple segments, and a fractured structure is provided on the surface of each segment. The third surface and the side surface connected to the end surfaces of the partition plates form an air guide surface, and the heat sink receives or discharges air flow with the air guide surface.

Abstract: A spike suppression device, for suppressing a spike current in a switched capacitor circuit, and the switched capacitor circuit includes an output capacitor and at least one input capacitor. The spike suppression device includes an inductive reactance element and a switch unit. The inductive reactance element is disposed between the output capacitor and the at least one input capacitor. The switch unit is coupled to the inductive reactance element. The inductive reactance element generates an induced voltage in response to the spike current. The induced voltage is opposite to the spike current, and the switch unit forms a discharge path of the inductive reactance element.

Abstract: A fabric aluminum composite film structure sequentially includes: a flame-retardant fabric layer, which includes a polyester fabric or a polyamide fabric; a flame-retardant coating layer, which includes polyurethane resin and flame retardants; an adhesive layer, which includes a solvent-free adhesive; an aluminum layer; and a transparent polyester layer. In addition, the fabric aluminum composite film structure has sufficient flammability, which is a flame-retardant fabric with weight reduction and good adhesion suitable for reflecting radar waves from a life raft.

Abstract: An embodiment package comprises an integrated circuit die encapsulated in an encapsulant, a patch antenna over the integrated circuit die, and a dielectric feature disposed between the integrated circuit die and the patch antenna. The patch antenna overlaps the integrated circuit die in a top-down view. The thickness of the dielectric feature is in accordance with an operating bandwidth of the patch antenna.

Abstract: The nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semi-conductor layer, a first passivation layer, and an electrode structure. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The first passivation layer is disposed on the second nitride-based semiconductor layer. The electrode structure is disposed on the second nitride-based semiconductor layer and the first passivation layer and penetrates the first passivation layer to make contact with the second nitride-based semiconductor layer, in which the electrode structure has a sidewall extending upward from the first passivation layer and oblique with respect to the first passivation layer.

Abstract: A single-band antenna structure includes a ground terminal, an impedance-matching terminal, a radiation terminal, and a signal feed-in terminal. The ground terminal includes a body. The impedance-matching terminal is bent and extended from the body, and connected perpendicularly to the body. The radiation terminal is square, and bent and extended from the impedance-matching terminal, and connected perpendicularly to the impedance-matching terminal, and arranged correspondingly with the body. The signal feed-in terminal is bent and extended from the radiation terminal, and connected perpendicularly to the radiation terminal, and connected to the impedance-matching terminal on a same side, and not connected to the ground terminal.

Abstract: A three-dimensional structure with an FD-SOI transistor includes a handler wafer, a first device layer and a second device layer stacked in sequence from bottom to top. The first device layer includes a first SOI layer, a first FD-SOI transistor and a first back gate. The first SOI layer includes a first front side and a first back side. The first FD-SOI transistor is disposed on the first front side. The first back gate is disposed on the first back side. The second device layer includes a second SOI layer, a second FD-SOI transistor and a second back gate. The second SOI layer includes a second front side and a second back side. The second FD-SOI transistor is disposed on the second front side. The second back gate is disposed on the second back side.

Abstract: An improved bin for receiving, storing or shipping goods, products or debris which has a horizontally-oriented bottom portion with at least two pairs of fork lift fork receiving channels, wherein each pair of fork lift fork receiving channels extends through the bottom portion, and wherein each fork lift fork receiving channel has a fork receiving port that is enclosed by a port top, two port sides and a port bottom; and at least one vertically-oriented wall disposed around a periphery of the bottom portion, thereby defining an open-top bin which allows for lifting the bin in an upright position using a forklift, and which allows for inverting the bin by rotating a forklift fork such that the a weight of the bin is supported by two or more of the port bottoms of the fork receiving ports. A self-spacing stacking feature is also available in some embodiments.

Abstract: A fiber-embedded vapor chamber structure includes: a lower plate having has a sealing edge surrounding a periphery of thereof and a recessed zone surrounded by the sealing edge and disposed on an inner surface of the lower plate; an upper plate having has an upper capillary layer disposed on a surface of the upper plate corresponding the lower plate; supporters are disposed in the recessed zone and extended toward the lower plate and the upper plate to abut against the lower capillary layer and the upper capillary layer. At least one strip-shaped fiber layer is disposed in the recessed zone. The fiber layer is flatly attached on the lower capillary layer or the upper capillary layer and pressed by a part of the supporters. As such, a space between the supports in the recessed zone is reserved to make steam flow.

Abstract: Alkylated naphthalene compositions are usually formed by reacting naphthalene with an electrophilic agent under acid-catalyzed conditions to afford a mixture of monoalkylated naphthalenes, dialkylated naphthalenes, and sometimes polyalkylated naphthalenes. Reaction conditions are usually chosen to change the product distribution for purposes of modifying lubricant properties such as viscosity or volatility. Rarely does the product distribution exceed 90 wt. % monoalkylated naphthalenes. Viscosity and volatility may alternately be modified by obtaining a first fraction enriched in monoalkylated naphthalenes and a second fraction enriched in dialkylated naphthalenes and combining the first fraction and the second fraction in a specified ratio to produce a modified alkylated naphthalene composition having a targeted value of one of the viscosity or the volatility.

Abstract: Disclosed is a power grid transmission and distribution cooperative dispatching method and system in a power market environment, relating to the technical filed of power market. The method includes: power grid transmission and distribution data are collected, and economic dispatching modeling is carried out on a hybrid system containing hydro-thermal power; linearization processing is carried out on nonlinear terms in the model; and accelerated solving is carried out on the model by adopting Benders decomposition, so that power gird transmission and distribution cooperative dispatching is optimized. The integration capacity of the power system containing hydro-thermal power to the renewable energy is enhanced, and the utilization efficiency of resources is improved, and the solving process is simplified in the present invention.

Abstract: Semiconductor devices and methods which utilize a treatment process of a bottom anti-reflective layer are provided. The treatment process may be a physical treatment process in which material is added in order to fill holes and pores within the material of the bottom anti-reflective layer or else the treatment process may be a chemical treatment process in which a chemical reaction is used to form a protective layer. By treating the bottom anti-reflective layer the diffusion of subsequently applied chemicals is reduced or eliminated, thereby helping to prevent defects that arise from such diffusion.

Abstract: An electronic device includes a substrate, an organic layer including a first opening and a second opening arranged in a first direction, a first insulating layer including a first portion and a second portion arranged in the first direction and connected to each other, and a first spacer between the first opening and the second opening. The second portion has a first length, the first spacer has a second length, the organic layer between the first opening and the second opening has a third length, the first length is greater than or equal to the second length and less than or equal to the third length, and a ratio of a first distance between the first spacer and the first opening to a second distance between the first spacer and the second opening is greater than or equal to 0.7 and less than or equal to 1.3.

Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.

Abstract: The present disclosure proposes network elements, methods at the network elements for facilitating reuse of IP address, a telecommunications system comprising the network elements. The method at a first network element for facilitating reuse of an IP address at multiple UEs comprising a first UE comprises: transmitting, to a second network element, a first request message associated with the first UE, the first request message comprising the IP address and a first indicator which, in conjunction with the IP address, uniquely identifies the first UE.

Abstract: The present invention discloses a use of a hypoxanthine compound in preparing a drug for treating pulmonary fibrosis and relates to the technical field of biological medicines. In the use of the hypoxanthine compound in preparing the drug for treating the pulmonary fibrosis, through pharmacological activity detection for treatment of pulmonary fibrosis with hypoxanthine compounds subjected to structural modification and transformation, the pharmacological activities of such the compounds in various animal disease models are tested and data about the activities of preventing and treating different types of pulmonary fibrosis are provided, which proves that the hypoxanthine compounds have good activities, with an effect being obviously superior to that of a positive drug Nintedanib commonly used in clinic, and that of hypoxanthine analogues A, B, C and D as well as other hypoxanthine analogues in the prior art.