Abstract: A semiconductor device includes a first plurality of channel layers. The first plurality of channel layers extend along a first direction. The semiconductor device includes a second plurality of channel layers. The second plurality of channel layers also extend along the first direction. The semiconductor de123329-vice includes a first dielectric fin structure that also extends along the first direction. The semiconductor device includes a first gate structure that extends along a second direction. The first gate structure comprises a first portion that wraps around each of the first plurality of channel layers and a second portion that wraps around each of the second plurality of channel layers. The first dielectric fin structure separates the first and second portions from each other. The first gate structure comprises a third portion that connects the first and second portions to each other and is vertically disposed below the first dielectric fin structure.

Abstract: A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.

Abstract: A driving method of a display panel includes: obtaining first initial voltage values respectively corresponding to N sub-pixels on a first data line and second initial voltage values respectively corresponding to the N sub-pixels on a second data line in a first initial picture, and third initial voltage values respectively corresponding to 1st to Mth sub-pixels of the N sub-pixels on the first data line and fourth initial voltage values respectively corresponding to the 1st to Mth sub-pixels on the second data line in a second initial picture following the first initial picture; calculating a voltage compensation value for the Mth sub-pixel based on the corresponding first, second, third, and fourth initial voltage value; calculating a target voltage value for the Mth sub-pixel based on the voltage compensation value; and displaying the second initial picture based on the target voltage value.

Abstract: A winding device includes a pair of outer pins oppositely arranged in a first direction with a periphery for an electrode assembly to wind around, adjusting members configured to reciprocate in a second direction perpendicular to the first direction to drive the pair of outer pins to move away from or close to each other to increase or reduce a distance between the pair of outer pins, a pair of inner pins arranged oppositely in the first direction between the pair of outer pins and configured to move independent of the adjusting members to clamp or release the electrode assembly, and an elastic returning member configured to apply an elastic force in the first direction to at least one of the pair of inner pins such that the pair of inner pins have a tendency to be close to each other.

Abstract: An authorization and policy parameter configuration method, a terminal, and a network function are provided. The method is applied to a terminal and includes: sending terminal-to-terminal relay communication capability information and/or a terminal policy container to a first network function; and receiving an authorization and policy parameter for relay communication sent by a second network function, where the authorization and policy parameter for relay communication is generated based on the relay communication capability information and/or the terminal policy container.

Abstract: A network communication device having an antenna frame includes a circuit board, a network communication chip, an antenna, a signal cable and an antenna frame. The network communication chip is disposed on the circuit board. The signal cable is electrically connected to the antenna and the circuit board. The antenna frame is assembled on the circuit board. The antenna frame has a slot. The antenna is engaged in the slot. The antenna is directly fixed on the circuit board through the antenna frame, and the assembling of the antenna is easy to complete.

Abstract: Described herein is a technique that provides a first robot associated with a first trust domain to identify and authenticate a second robot associated with a second trust domain. The identification and authentication technique described herein is based on a robot processing a variety of input signals obtained via sensors, in order to generate robot identification information that can be compared with known or trusted information. Advantageously, the identification technique occurs locally, for example, at the robot and at the location of the robot-to-robot interaction, eliminating any requirement for communicating with an authoritative remote or cloud-based service, at the time and place of the robot-to-robot interaction.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a titanium nitride (TiN) layer on the p-type semiconductor layer as a nitrogen to titanium (N/Ti) ratio of the TiN layer is greater than 1, forming a passivation layer on the TiN layer and the barrier layer, removing the passivation layer to form an opening, forming a gate electrode in the opening, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode on the barrier layer.

Abstract: During high-speed network policy searching for data packets, an upper limit and a lower limit for a policy count are predefined for a ratio of the policy count to the sum of the policy count and the range count. A policy tree builder generates a policy tree image from a set of recursive operations on the raw policy set including an on-the-fly determination of whether a specific node is a leaf based on a leaf policy count limit, wherein for a selected dimension, the specific node is converted to the leaf if the policy count does not exceed the leaf policy count limit and the range count for the selected dimension does not exceed a product of the leaf policy count limit and a range count limit coefficient, and otherwise the specific node is converted to two or more child nodes. A network processor configures at least one set of registers, at least one set of tables, and at least one sequence of instructions according to the policy tree image.

Abstract: An interaction method, includes: obtaining an interactive instruction; displaying an interactive interface in response to the interactive instruction, where the interactive interface includes a sending screen area and a receiving screen area; acquiring an image to be interacted with in the sending screen area, where the image to be interacted with corresponds to an application to be interacted with; obtaining a moving instruction; and moving the image to be interacted with from the sending screen area to the receiving screen area in response to the moving instruction, to display a mirror image of the application to be interacted with on a vehicle-mounted screen corresponding to the receiving screen area.

Abstract: A method of assigning a respective controller area network (CAN) ID to each of a plurality of devices, wherein the each of the plurality of devices is coupled with a CAN bus and comprises at least one input and at least one output by which the plurality of devices are connected, in a chain, to a controller of the CAN bus having at least one output, the method comprising: resetting the CAN ID of the each of the plurality of devices to a same initial value; using the at least one output of the controller to set the at least one input of a first device of the plurality of devices to a first value; using the first value to set the CAN ID of the first device; using the at least one output of the first device to set the at least one input of a second device of the plurality of devices to a second value, wherein the second device is connected to the first device; and using the second value to set the CAN ID of the second device.

Abstract: A display system and a display method are provided. The display system includes a first display device, a first transmission cable and a second display device. The first transmission cable connects between the first display device and the second display device. The first display device receives a first command and an image signal. The first display device generates a first control signal according to the first command. A splicing mode of the first display device is turned on, the first display device provides the first control signal and the image signal to the second display device. The first display device displays a first image. The second display device displays a second image. A predetermined displaying image corresponding to the image signal comprises the first image and the second image.

Abstract: A manufacturing method of an automotive floor mat includes: providing a thermoplastic sheet, and heating and softening the thermoplastic sheet; using a vacuum suction device to suck the softened thermoplastic sheet to cause a lower surface of the softened thermoplastic sheet to tightly abut against a mold; cooling and shaping the thermoplastic sheet; and punching the formed automotive floor mat from the sheet. A plurality of anti-slip convex nails are arranged on an upper surface of the thermoplastic sheet. A plurality of grooves and/or patterns are arranged on an outer surface of the mold.

Abstract: An electronic device is provided. The electronic device includes a substrate, a first insulating layer, an oxide semiconductor layer, a second insulating layer, and a gate electrode. The first insulating layer is disposed on the substrate. The oxide semiconductor layer is disposed on the first insulating layer and has a first part and a second part adjacent to the first part. The second insulating layer is disposed on the oxide semiconductor layer. The gate electrode is disposed on the substrate and overlapped with the first part of the oxide semiconductor layer. Wherein a concentration of H? at a first interface between the second insulating layer and the first part is greater than a concentration of H? at a center portion of the first part in a spectrum measured by TOF-SIMS.

Abstract: A method for fabricating a semiconductor package includes applying polymer-based solder paste onto a substrate; bringing a plurality of solder bumps on a semiconductor die into contact with the polymer-based solder paste on the substrate; reflowing the polymer-based solder paste to form a plurality of solder joints between the substrate and the semiconductor die, wherein a post-soldering residue is produced to encapsulate a lower portion of each solder joint; and applying an underfill between the substrate and the semiconductor die to encapsulate an upper portion of the solder joint.

Abstract: An antenna module using two antennas with different radiation mechanisms for signal transmitting and receiving includes a substrate, a first antenna, and a second antenna. A first surface of the substrate includes a first clearance area and a second clearance area, the first clearance area is located in a first corner area of the first surface, and the second clearance area is located in a second corner area of the first surface. The first antenna includes a first radiation portion located in the first clearance area, and the second antenna includes a second radiation portion located in the second clearance area. An antenna type of the first antenna is different from an antenna type of the second antenna, and the first antenna and the second antenna are configured to transmit and receive signals of the same frequency. An electronic device is also disclosed.

Abstract: The embodiments of the present application provide an electrode assembly, a battery cell, a battery, and an electrical device. The electrode assembly includes a first electrode plate, a second electrode plate, and an isolation assembly. The first electrode plate and the second electrode plate have opposite polarities, and the isolation assembly is configured to isolate the first electrode plate from the second electrode plate. The first electrode plate, the second electrode plate, and the isolation assembly are wound and form a bent area. The isolation assembly includes a multi-layer structural area provided between the first electrode plate and the second electrode plate, and at least a portion of the multi-layer structural area is provided in the bent area.

Abstract: An improved bin for receiving, storing or shipping goods, products or debris which has a horizontally-oriented bottom portion with at least two pairs of fork lift fork receiving channels, wherein each pair of fork lift fork receiving channels extends through the bottom portion, and wherein each fork lift fork receiving channel has a fork receiving port that is enclosed by a port top, two port sides and a port bottom; and at least one vertically-oriented wall disposed around a periphery of the bottom portion, thereby defining an open-top bin which allows for lifting the bin in an upright position using a forklift, and which allows for inverting the bin by rotating a forklift fork such that the a weight of the bin is supported by two or more of the port bottoms of the fork receiving ports. A self-spacing stacking feature is also available in some embodiments.

Abstract: A method includes forming a first gate stack over a first semiconductor region, depositing a spacer layer on the first gate stack, and depositing a dummy spacer layer on the spacer layer. The dummy spacer layer includes a metal-containing material. An anisotropic etching process is performed on the dummy spacer layer and the spacer layer to form a gate spacer and a dummy sidewall spacer, respectively. The first semiconductor region is etched to form a recess extending into the first semiconductor region. The first semiconductor region is etched using the first gate stack, the gate spacer, and the dummy sidewall spacer as an etching mask. The method further includes epitaxially growing a source/drain region in the recess, and removing the dummy sidewall spacer after the source/drain region is grown.