Abstract: A semiconductor structure includes an insulator, a semiconductor fin, a gate stack, a gate contact, a source/drain material, and a source/drain contact structure. The semiconductor fin protrudes from the insulator. The gate stack is disposed on the semiconductor fin and the insulator. The gate contact is disposed on and electrically connected to the gate stack. The source/drain material is disposed on the semiconductor fin. The source/drain contact structure is disposed on and electrically connected to the source/drain material. The semiconductor fin extends along a first direction, the gate stack extends along a second direction different from the first direction. An offset S in the second direction between the gate contact and the source/drain contact structure satisfies: 0<S?(W/2+D/2), wherein W is a width of the semiconductor fin, and D is a dimension of the gate contact.

Abstract: A cantilever structure includes an anchor portion and a film structure. The film structure covers over a cavity and vibrates within the cavity. A length of the film structure is less than a width of the film structure. The anchor portion includes at least one protrusion protruding toward the cavity, and the film structure is anchored on the anchor portion with the at least one protrusion.

Abstract: A memory device includes a bottom electrode, a buffer element, a metal-containing oxide portion, a resistance switch element, and a top electrode. The buffer element is over the bottom electrode. The metal-containing oxide portion is over the buffer element, in which the metal-containing oxide portion has a same metal material as that of the buffer element. The resistance switch element is over the metal-containing oxide portion. The top electrode is over the resistance switch element.

Abstract: A method and apparatus for volume control of an electronic device is provided herein. During operation, a volume-control knob will increase a volume of sound output from a device in a substantially linear fashion (versus knob rotation angle) as a volume-control knob is rotated. Once the volume-control knob is rotated past a predetermined amount, a volume boost is activated, increasing the volume level in a non-linear fashion. More particularly, in one embodiment of the present invention, once the volume-control knob is rotated past the predetermined amount (e.g., 300 degrees), the volume will be increased instantaneously (e.g., by 25%).

Abstract: The present disclosure relates to a display panel, a display device and a manufacturing method of a display panel. The display panel includes: a display substrate having a display area and a non-display area, the display substrate including a substrate and an IC bonding portion which includes: a pin; a first passivation layer located on one side of the substrate adjacent to the pin and covering a peripheral area of the pin, and exposing a central area of the pin; a first barrier layer located on one side of the first passivation layer away from the substrate and covered at the first passivation layer and an edge of the first passivation layer connected to the pin; and a first metal layer located on one side of the first barrier layer away from the substrate, at least covering a central portion of the pin, and electrically connected to the pin.

Abstract: The present application relates to an antenna assembly for a base station antenna, a base station antenna arrangement and a base station antenna. The antenna assembly has a reflector, which has a longitudinal extent, a front side and a rear side opposite the front side, where the front side is configured for radiating elements to be arranged thereon, wherein, the reflector has a first longitudinal section residing in a first plane and a second longitudinal section residing in a second plane that is adjacent to the first longitudinal section, where the first plane is rearward of the second plane. The properties of the base station antenna arrangement and the base station antenna may be improved through the antenna assembly.

Abstract: An optoelectronic tweezer device includes a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located above the transparent substrate and includes a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region. The first electrode is located on the first doping region and is electrically connected to the first doping region. The dielectric layer is located above the semiconductor layer and has a first through hole overlapping the first electrode.

Abstract: The technology described includes methods for pretraining a document encoder model based on multimodal self cross-attention. One method includes receiving image data that encodes a set of pretraining documents. A set of sentences is extracted from the image data. A bounding box for each sentence is generated. For each sentence, a set of predicted features is generated by using an encoder machine-learning model. The encoder model performs cross-attention between a set of masked-textual features for the sentence and a set of masked-visual features for the sentence. The set of masked-textual features is based on a masking function and the sentence. The set of masked-visual features is based on the masking function and the corresponding bounding box. A document-encoder model is pretrained based on the set of predicted features for each sentence and pretraining tasks. The pretraining tasks includes masked sentence modeling, visual contrastive learning, or visual-language alignment.

Abstract: A seat belt anchor is provided, wherein the seat belt anchor includes: a main body including a locking slot having an opening and an inner surface; and a locking member movably connected to the main body and movable between a lock position and a release position; wherein when the locking member is in the lock position, the locking member projects toward the locking slot to define a distance between the inner surface of the locking slot and the locking member which is larger than a diametric dimension of a shaft body of the fastener so that it allows the shaft body of the fastener to axially pass through the locking slot; wherein when the locking member is in the release position, it allows a ring body of the fastener to directly pass through the opening to be in the locking slot.

Abstract: A card reader with a protective mechanism includes an upper shell, a lower shell disposed to a bottom surface of the upper shell, a protective mechanism and a circuit board assembly disposed between the upper shell and the lower shell. The protective mechanism includes a front cover, a rear cover covered to a rear of the front cover, two rollers disposed along an up-down direction, two springs, two supporting structures and a plurality of sealing structures. The two springs elastically abut between an inner surface of a top wall of the front cover and one roller along a vertical direction. The two supporting structures are mounted around two opposite sides of the one roller, and two opposite sides of the other roller. The plurality of the sealing structures are disposed at two outer surfaces of the two supporting structures.

Abstract: Camera modules and associated electronic devices and systems are described. A camera module may include a set of housing elements that at least partially defines an interior cavity, a set of lens elements, an image sensor positioned within the interior cavity to receive light through the set of lens elements, and a substrate assembly. The substrate assembly may include a set of rigid substrates, a first set of electrical contacts positioned on a first surface of the set of rigid substrates, and a second set of electrical contacts positioned on a second surface of the set of rigid substrates. The substrate assembly may be positioned such that a first portion of the substrate assembly is positioned inside the interior cavity and a second portion of the substrate assembly extends outside of the interior cavity.

Abstract: A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.

Abstract: A coating device for applying a coating to a member to be coated includes: a roller assembly including a first spool and second spool that are spaced apart, wherein the first spool is configured to release the member to be coated that is to be coated, and the second spool is configured to roll up the member to be coated after being coated with a coating; a coating assembly including an electrostatic roller set and an electrostatic rod, wherein the electrostatic roller set is at least partially rotatable and is configured to electrostatically adsorb the powder, the electrostatic rod is configured to provide electrostatic adsorption force to the powder on the electrostatic roller set; a composite assembly provided at downstream position of the coating assembly, and configured to connect the powder laid on the member to be coated with the member to be coated.

Abstract: An aqueous electrolyte solution, a power storage device filled with the aqueous electrolyte solution, and a manufacturing method of the power storage device are illustrated. The aqueous electrolyte solution comprises alkali metal cations of different types. With the hydration enthalpy of the alkali metal cations of the different types, a simulated boiling point of the aqueous electrolyte solution is higher than the 105° C. of the conventional aqueous electrolyte solution. After processed by the reflow furnace at 250° C., the power storage device has no cracks found on its appearance, which meets the electrical requirements, and overcomes the problem of bursting of the power storage device filled with conventional aqueous electrolyte solution. The housing of the power storage device adopts liquid crystal polymer, and/or the power storage device is firstly vacuumed and then packaged, therefore increasing coulombic efficiency of electrical testing of the power storage device.

Abstract: A semiconductor device having a low-k isolation structure and a method for forming the same are provided. The semiconductor device includes channel structures, laterally extending on a substrate; gate structures, intersecting and covering the channel structures; and a channel isolation structure, laterally penetrating through at least one of the channel structures, and extending between separate sections of one of the gate structures along an extending direction of the one of the gate structures. A low-k dielectric material in the channel isolation structure comprises boron nitride.

Abstract: An information handling system includes a camera in a portable housing, the camera selectively blocked and exposed by a camera shutter having a biasing device with a semiautomatic open and close response generating by biasing the shutter towards the closed position when the shutter is greater than a predetermined amount closed and biasing the shutter towards the open position when the shutter is greater than a predetermined amount open. The dual bias is generated with a torsion spring captured between a fixed portion and a sliding portion that interacts with an extension from the fixed portion and an extension from the sliding portion based upon the shutter position.

Abstract: A structure includes a semiconductor substrate, a conductor-insulator-conductor capacitor. The conductor-insulator-conductor capacitor is disposed on the semiconductor substrate and includes a first conductor, a nitrogenous dielectric layer and a second conductor. The nitrogenous dielectric layer is disposed on the first conductor and the second conductor is disposed on the nitrogenous dielectric layer.