Abstract: Disclosed herein are system, method, and computer program product embodiments for generating a graphical user interface (GUI) with a consolidated user incident report. In some embodiments, a server receives a set of data comprising a first set of data elements. The server incorporates the set of data on a graphical user interface (GUI). The set of data is rendered in a first portion of the GUI and the different set of data is rendered in a second portion of the GUI. The server further receives a request to delete one or more data elements of the set of data or the different set of data from the GUI. As such, the server consolidates the first and second portion into a combined portion on the GUI. The combined portion comprises the set of data and the different set of data excluding the one or more data elements.

Abstract: The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a channel layer, a first semiconductor epitaxial structure, a second semiconductor epitaxial structure, a drain, a source and a gate. The first semiconductor epitaxial structure is located on the channel layer and sequentially includes a first aluminum gallium nitride layer, a supply layer and a second aluminum gallium nitride layer, and the first semiconductor epitaxial structure is formed with a hollow part extending from a top surface of the second aluminum gallium nitride layer toward the channel layer. The second semiconductor epitaxial structure is located in the hollow part and sequentially includes an aluminum gallium nitride layer and a P-type gallium nitride layer. The drain and the source are respectively arranged on the second aluminum gallium nitride layer, and the gate is arranged on the P-type gallium nitride layer.

Abstract: The present invention provides a high electron mobility transistor, which includes a substrate, a buffer layer, a gallium nitride layer, a two-dimensional material structure, a covering layer, a drain, a source and a gate. The buffer layer is located on the substrate. The gallium nitride layer is located on the buffer layer and forms a channel layer. The two-dimensional material structure is located on the channel layer. The covering layer partially covers the two-dimensional material structure. The drain and the source are arranged on the two-dimensional material structure, and the gate is arranged on the covering layer.

Abstract: A processor may automatically generate one or more transcripts based on a media context. The processor may append at least one of the one or more transcripts to the media. The processor may modify the at least one of the one or more transcripts based on an adjustment to a weight factor.

Abstract: The present invention discloses a targeted therapy composition and a method for suppressing breast cancer cell proliferation, migration or invasion by administrating the targeted therapy composition to a subject in need thereof. The composition comprises a type 3 epithelial membrane proteins (EMP3) targeted inhibitor. The breast cancer cells are characterized by upregulation of EMP3, EGFR, HER2, HER3, HR, or downregulation of HER4 gene expression. EMP3-targeting oligonucleotide or nuclease is administrated upon the breast cancer cells so as to degrade EMP3-coding DNA or mRNA, and to suppress breast cancer cell proliferation, migration or invasion.

Abstract: A three-dimensional (3D) scanning system includes a projector that generates an emitted light projected on an object, a reflected light being reflected from the object; a sensor that generates image data according to the reflected light; and a depth processor that generates depth data according to the image data and at least one modified factor representing corresponding deviation amount between the image data and an ideal image data due to a circle of confusion caused by the reflected light passing a lens of the sensor and then irradiating a sense plane of the sensor out of focus.

Abstract: A dimming circuit is configured to generate a dimming signal to control a brightness of a light emitting device. The brightness is correlated with a duty ratio of the dimming signal. The dimming circuit is configured to count a conduction time of the dimming signal according to a programmable period count code and a programmable brightness code, based upon a fundamental frequency, wherein when the conduction time is less than a conduction time lower limit, based upon a down conversion ratio, the dimming circuit reduces a frequency of the dimming signal according to the programmable period count code and the programmable brightness code, wherein the down conversion ratio is greater than 1 to an extent where a dimming conduction time is greater than or equal to a conduction time lower threshold.

Abstract: A flexible display, including a stand, a supporting mechanism, a flexible screen, a driving component, a driven component, and a link, is provided. The supporting mechanism is connected to the stand. The flexible screen is attached to the supporting mechanism. The driving component is disposed on the stand. The driven component is disposed on a side of the supporting mechanism distant from the stand. The link has a first end and a second end opposite to the first end. The first end is connected to the driving component, and the second end is connected to the driven component. The driving component drives the driven component through the link to move on a first horizontal plane to drive the supporting mechanism and the flexible screen to transform when the driving component moves between the first horizontal plane and a second horizontal plane that is parallel to the first horizontal plane.

Abstract: A method includes forming a first portion of a spacer layer over a first fin and a second portion of the spacer layer over a second fin, performing a first etching process to recess the first portion of the spacer layer with respect to the second portion of the spacer layer to form first spacers on sidewalls of the first fin, subsequently performing a second etching process to recess the second portion of the spacer layer with respect to the first spacers to form second spacers on sidewalls of the second fin, where the second spacers are formed to a height greater than that of the first spacers, and forming a first epitaxial source/drain feature and a second epitaxial source/drain feature between the first spacers and the second spacers, respectively, where the first epitaxial source/drain feature is larger than that of the second epitaxial source/drain feature.

Abstract: A method for performing light shaping with aid of an adaptive projector and associated apparatus are provided.

Abstract: A method for performing light shaping with aid of an adaptive projector and associated apparatus are provided.

Abstract: A 3D image sensing device includes a first camera lens, a second camera lens and a light source. A 3D image processing method for the 3D image sensing device includes the following steps. Firstly, a target is photographed by the first camera lens and the second camera lens, and the obtained images are processed in a stereo vision mode. Consequently, a first depth map is obtained. After the light source emits plural feature points to the target, the target is photographed by the first camera lens and the second camera lens, and the obtained images are processed in an active stereo vision mode. Consequently, a second depth map is obtained. The first depth map and the second depth map are synthesized as a synthesized depth map according to a synthetization strategy.

Abstract: A virtual machine backup method, performed by a first host, includes: capturing a request to write data from a virtual machine to a hard disk image file, wherein the request includes written data and input and output location information, copying the written data to a temporary storage area, calculating a first key of the written data, storing the first key, the input and output location information into a first resource location structure, pausing an operation of the virtual machine and generating a second resource location structure according to the first resource location structure, the first key and a second key, and outputting a backup data set to a second host according to the second resource location structure, wherein the backup data set includes the second resource location structure and only one of existing data and the written data when the first key and the second key are the same.

Abstract: The present invention relates to a preparation method of a P-type high-resistance and ultra-high-resistance Czochralski monocrystalline silicon substrate. According to the present invention, an oxygen concentration in a silicon wafer is controlled to match with a resistivity, so as to realize that a conductive type of the silicon substrate does not change after a device is manufactured, and that the silicon substrate has a high resistivity. The oxygen concentration and the resistivity in silicon crystal can be adjusted separately or together; and operation is flexible, and a yield of a high-resistance silicon crystal is greatly improved.

Abstract: A memory operation method, comprising: when a first super block of a memory device is a open block (or in programming state), obtaining a first read count of one of a plurality of first memory blocks in the first super block, wherein the first read count is a number of times that data of one of the first memory blocks is read out; determining whether the first read count is larger than a first threshold; and when the first read count is larger than the first threshold, moving a part of the data in the first super block to a safe area in the memory device, wherein the part of the data comprises data in the first memory block.

Abstract: Sacrificial pillars for a semiconductor device assembly, and associated methods and systems are disclosed. In one embodiment, a region of a semiconductor die may be identified to include sacrificial pillars that are not connected to bond pads of the semiconductor die, in addition to live conductive pillars connected to the bond pads. The region with the sacrificial pillars, when disposed in proximity to the live conductive pillars, may prevent an areal density of the live conductive pillars from experiencing an abrupt change that may result in intolerable variations in heights of the live conductive pillars. As such, the sacrificial pillars may improve a coplanarity of the live conductive pillars by reducing variations in the heights of the live conductive pillars. Thereafter, the sacrificial pillars may be removed from the semiconductor die.

Abstract: A system and method for providing on-demand edge compute. The system may include an orchestrator that provides a UI and that controls an abstraction layer for implementing a workflow for providing on-demand edge compute. The abstraction layer may include a server configuration orchestration (SCO) system (e.g., a Metal-as-a-Service (MaaS) system) and API that may provide an interface between the orchestrator and the SCO. The API may enable the orchestrator to communicate with the SCO for receiving requests that enable the SCO to integrate with existing compute resources to perform various compute provisioning tasks (e.g., to build and provision a server instance). The various tasks, when executed, may provide on-demand edge compute service to users. The SCO API may further enable the ECS orchestrator to receive information from the SCO (e.g., compute resource information, status messages).

Abstract: This application discloses a relay selection method and apparatus, a relay information transmission method and apparatus, and a terminal, and pertains to the technical field of communications. The method in the embodiments of this application includes: receiving, by a remote terminal, first information sent by a relay terminal, where the first information includes at least one of a relay hop count N or quality of service (QoS) information of the relay terminal, N represents an Nth hop of the relay terminal in a relay link, and N is a positive integer; and performing, by the remote terminal, relay terminal selection based on the first information.

Abstract: A structured-light three-dimensional (3D) scanning system includes a projector that emits a projected light with a predetermined pattern onto an object; an image capture device that generates a captured image according to a reflected light reflected from the object, the predetermined pattern of the projected light being distorted due to 3D shape of the object, thereby resulting in a distorted pattern; a depth decoder that converts the distorted pattern into a depth map representing the 3D shape of the object; and a depth fusion device that generates a fused depth map according to at least two different depth maps associated with the object.

Abstract: A fan-out semiconductor device includes stacked semiconductor dies having die bond pads arranged in columns exposed at a sidewall of the stacked semiconductor dies. The stacked dies are encapsulated in a photo imageable dielectric (PID) material, which is developed to form through-hole cavities that expose the columns of bond pads of each die at the sidewall. The through-hole cavities are plated or filled with an electrical conductor to form conductive through-holes coupling die bond pads within the columns to each other.