Patents by Inventor Wen Wang

Wen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11945918
    Abstract: This invention relates to the field of contaminated plastic waste decomposition. More specifically, the invention comprises methods and systems to decompose contaminated plastic waste and transform it into value-added products.
    Type: Grant
    Filed: December 28, 2021
    Date of Patent: April 2, 2024
    Assignee: Novoloop, Inc.
    Inventors: Jia Yun Yao, Yu Wen Wang, Tapaswy Muppaneni, Ruja Shrestha, Jennifer Le Roy, Garret D. Figuly
  • Patent number: 11944970
    Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.
    Type: Grant
    Filed: June 10, 2019
    Date of Patent: April 2, 2024
    Assignees: INSTANT NANOBIOSENSORS, INC., INSTANT NANOBIOSENSORS CO., LTD.
    Inventors: Yu-Chung Huang, Yi-Li Sun, Ting-Chou Chang, Jhy-Wen Wu, Nan-Kuang Yao, Lai-Kwan Chau, Shau-Chun Wang, Ying Ting Chen
  • Fan
    Patent number: 11946483
    Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.
    Type: Grant
    Filed: May 17, 2023
    Date of Patent: April 2, 2024
    Assignee: ACER INCORPORATED
    Inventors: Jau-Han Ke, Tsung-Ting Chen, Chun-Chieh Wang, Yu-Ming Lin, Cheng-Wen Hsieh, Wen-Neng Liao
  • Publication number: 20240101836
    Abstract: The present disclosure provides an expanded coating, a preparation method and use thereof, and a permanent magnet comprising same. The expanded coating described herein comprises pores and a filler resin arranged among the pores; the pores comprise at least a spheroid pore having a cross section with a long diameter and a short diameter; in the cross section of the expanded coating, the area of the spheroid pores accounts for 50%-60% of the cross-sectional area of the expanded coating. The permanent magnet of the present disclosure comprises the expanded coating. The expanded coating has high strength and can exhibit excellent mechanical properties and corrosion resistance at high temperatures (such as 170° C.), with a shear strength greater than 2 MPa, a tensile strength greater than 2 MPa, an oil resistance greater than 1800 h and a neutral salt spray performance greater than 288 h at 170° C.
    Type: Application
    Filed: September 26, 2023
    Publication date: March 28, 2024
    Inventors: Zhiqiang LI, Wen LI, Pengfei WANG, Bin ZHOU, Yunting SU
  • Patent number: 11942145
    Abstract: The present disclosure describes a method for memory cell placement. The method can include placing a memory cell region in a layout area and placing a well pick-up region and a first power supply routing region along a first side of the memory cell region. The method also includes placing a second power supply routing region and a bitline jumper routing region along a second side of the memory cell region, where the second side is on an opposite side to that of the first side. The method further includes placing a device region along the second side of the memory cell region, where the bitline jumper routing region is between the second power supply routing region and the device region.
    Type: Grant
    Filed: May 6, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chuan Yang, Jui-Wen Chang, Feng-Ming Chang, Kian-Long Lim, Kuo-Hsiu Hsu, Lien Jung Hung, Ping-Wei Wang
  • Patent number: 11943221
    Abstract: Aspects of the invention include systems and methods configured to prevent masquerading service attacks. A non-limiting example computer-implemented method includes sending, from a first server in a cloud environment, a communication request comprising an application programming interface (API) key and a first server identifier to an identity and access management (IAM) server of the cloud environment. The API key can be uniquely assigned by the IAM server to a first component of the first server. The first server receives a credential that includes a token for the first component and sends the credential to a second server. The second server sends the credential, a second server identifier, and an identifier for a second component of the second server to the IAM server. The second server receives an acknowledgment from the IAM server and sends the acknowledgment to the first server.
    Type: Grant
    Filed: August 25, 2021
    Date of Patent: March 26, 2024
    Assignee: International Business Machines Corporation
    Inventors: Sen Wang, Mei Liu, Si Bo Niu, Wen Yi Gao, Zong Xiong Z X Wang, Guoxiang Zhang, Xiao Yi Tian, Xian Wei Zhang
  • Publication number: 20240096701
    Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.
    Type: Application
    Filed: May 17, 2023
    Publication date: March 21, 2024
    Inventors: Chun-Yuan CHEN, Huan-Chieh SU, Ching-Wei TSAI, Shang-Wen CHANG, Yi-Hsun CHIU, Chih-Hao WANG
  • Publication number: 20240097035
    Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Chen-Ming Lee, I-Wen Wu, Po-Yu Huang, Fu-Kai Yang, Mei-Yun Wang
  • Publication number: 20240096630
    Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.
    Type: Application
    Filed: January 12, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Yin, Tzu-Wen Pan, Yu-Hsien Lin, Yu-Shih Wang, Jih-Sheng Yang, Shih-Chieh Chao, Yih-Ann Lin, Ryan Chia-Jen Chen
  • Publication number: 20240098734
    Abstract: A method of wireless communication at UE is disclosed herein. The method includes transmitting at least one of a first indication including UE capability information indicating that the UE is capable of transmitting in UL during one or more MGs or a second indication including information indicating a first set of slots corresponding to the one or more MGs. The method includes obtaining a configuration to transmit a set of UL transmissions based on at least one of the first indication or the second indication. The method includes transmitting, based on the configuration, the set of UL transmissions in the first set of slots corresponding to the one or more MGs.
    Type: Application
    Filed: September 20, 2022
    Publication date: March 21, 2024
    Inventors: Changhwan PARK, Xiao Feng WANG, Liangping MA, Bharat SHRESTHA, Jae Ho RYU, Rebecca Wen-Ling YUAN, Sanghoon KIM
  • Publication number: 20240093030
    Abstract: The present invention provides a high-strength and high-heat-resistant bio-based polyamide composition, which consists of the following parts of materials by mass: 43.50-89.95% of bio-based polyamide resin slices; 10-50% of reinforcements; 0.01-2% of rare earth compounds; 0.01-1% of copper salt antioxidant combinations; 0.01-1% of free-radical scavengers; 0.01-0.5% of heat-conducting masterbatches; 0.01-1% of stabilizers; and 0-1% of dispersants. The advantage of the present invention is presented in that: the bio-based polyamide resin slice is prepared through a stepwise polycondensation process of pentanediamine and adipic acid, or through a stepwise polycondensation process of pentanediamine, adipic acid and terephthalic acid and the pentanediamine is prepared through fermentation of starch, so the prepared polyamide resin pertains to an environmentally-friendly engineering plastic.
    Type: Application
    Filed: December 28, 2021
    Publication date: March 21, 2024
    Applicants: SHANGHAI PRET COMPOSITES CO., LTD., ZHEJIANG PRET ADVANCED MATERIALS CO., LTD., CHONGQING PRET NEW MATERIALS CO., LTD., SHANGHAI PRET CHEMICAL NEW MATERIALS CO., LTD
    Inventors: Haisheng ZHANG, Jianrui CHEN, Yi WANG, Ruixiang YAN, Ying CAI, Bing ZHOU, Meiling XU, Qianhui ZHANG, Qing CAI, Guoyi DU, Tinglong YAN, Wen ZHOU
  • Publication number: 20240096985
    Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 21, 2024
    Inventors: I-Wen WU, Chen-Ming LEE, Fu-Kai YANG, Mei-Yun WANG
  • Publication number: 20240097816
    Abstract: An information transmission method and an apparatus. The information transmission method includes: a receive end sends first indication information, where the first indication information indicates a target receiving mode of the receive end, and the target receiving mode is one of a plurality of receiving modes. The receive end receives service information based on the target receiving mode. The receive end performs decoding processing on the service information based on the target receiving mode. In this way, power consumption can be further reduced, and information transmission of a plurality of service types can be supported, thereby improving information transmission flexibility and user experience.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 21, 2024
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Tianhang YU, Jiajie TONG, Gongzheng ZHANG, Rong LI, Jun WANG, Wen TONG
  • Publication number: 20240093357
    Abstract: A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 21, 2024
    Inventors: Jen-Chun Wang, Ya-Lien Lee, Chih-Chien Chi, Hung-Wen Su
  • Patent number: 11931488
    Abstract: Disclosed is a nebulizing diffuser, including a shell, an air pump, a bottle seat, and an atomizing cavity, where a bottom of the bottle seat is provided with a first oil outlet and a first oil return hole; a top of the atomizing cavity is provided with a second oil outlet and a second oil return hole; the first oil outlet and the second oil outlet are connected with each other up and down; the first oil return hole and the second oil return hole are connected with each other up and down; a lateral portion of the atomizing cavity is provided with an air wave hole; and the shell is provided with a mist outlet. The nebulizing diffuser can discharge essential oil mist efficiently, and can make full use of essential oil in the bottle.
    Type: Grant
    Filed: August 10, 2023
    Date of Patent: March 19, 2024
    Assignee: ShenZhen ChangLin Houseware Co., Ltd.
    Inventor: Wen Wang
  • Patent number: 11934027
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: June 21, 2022
    Date of Patent: March 19, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • Patent number: 11936958
    Abstract: A processor may automatically generate one or more transcripts based on a media context. The processor may append at least one of the one or more transcripts to the media. The processor may modify the at least one of the one or more transcripts based on an adjustment to a weight factor.
    Type: Grant
    Filed: July 28, 2021
    Date of Patent: March 19, 2024
    Assignee: International Business Machines Corporation
    Inventors: Jian Dong Yin, Wen Wang, Zhuo Cai, Rong Fu, Hao Sheng, Kang Zhang
  • Patent number: 11931671
    Abstract: A three-stage tubular T-shaped degassing device with microbubble axial flow and spiral flow fields is provided, which is applied to quick degassing of a gas-liquid two-phase flow. The three-stage tubular T-shaped degassing device adopts a quick degassing technology combining a microbubble uniform mixed rotational axial flow field and a spiral runner conical spiral flow field with layered jet collision reversing depth degassing. A microbubble uniform mixer is configured to adjust gas-liquid two-phase flow containing big bubbles into microbubble uniform mixed axial flow. A microbubble cyclone is configured to adjust the microbubble uniform mixed axial flow into multiple strands of rotational axial flows containing microbubbles. A rotational axial flow degasser implements the horizontal type microbubble uniform mixed multiple strands rotational axial flow degassing operation to remove most microbubbles to form axial flow gas and axial flow liquid.
    Type: Grant
    Filed: October 11, 2021
    Date of Patent: March 19, 2024
    Assignee: QINGDAO UNIVERSITY OF TECHNOLOGY
    Inventors: Xinfu Liu, Zhongxian Hao, Ji Chen, Chaoyong Yu, Guanghai Yu, Aigang Hao, Xiaoming Wu, Jianfeng Wang, Wen Xing, Yongjun Shi, Xiaolei Wang, Ruiqiang Zhang
  • Publication number: 20240084533
    Abstract: The present disclosure provides a soft ground cleaning vehicle, including a main body frame; wherein each of both sides of the main body frame is arranged with a screw propulsion mechanism, and a lower portion of each of the both sides of the main body frame is arranged with a bottom frame; a power assembly is arranged on the bottom frame, and an extension frame is arranged on a lower portion of the bottom frame; the extension frame is arranged with a rotation assembly; a plastic track is arranged on the power assembly and the rotation assembly; a plurality of stand plates are arranged on an outer strip surface of the plastic track.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: QI QIU, HAO CHEN, MINGBIN GONG, YANGFANG WU, PENGFEI WANG, WEN YU, JUN ZHANG
  • Publication number: 20240088004
    Abstract: A stacked wiring structure includes a first wiring substrate and a second wiring substrate. The first wiring substrate includes a first glass substrate, multiple first conductive through vias penetrating through the first glass substrate, and a first multi-layered redistribution wiring structure disposed on the first glass substrate. The second wiring substrate includes a second glass substrate, multiple second conductive through vias penetrating through the second glass substrate, and a second multi-layered redistribution wiring structure disposed on the second glass substrate. The first conductive through vias are electrically connected to the second conductive through vias. The first glass substrate is spaced apart from the second glass substrate. The first multi-layered redistribution wiring structure is spaced apart from the second multi-layered redistribution wiring structure by the first glass substrate and the second glass substrate.
    Type: Application
    Filed: August 21, 2023
    Publication date: March 14, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Tai-Jui Wang, Jui-Wen Yang, Chieh-Wei Feng, Chih Wei Lu, Hsien-Wei Chiu