Abstract: A method for making an optical device includes the steps of: rubbing an orienting film so as to stretch the molecular structure thereof and so as to permit the molecular units of the molecular structure to be aligned along a first axis and to permit the orienting space between each adjacent pair of the molecular units of the molecular structure to be oriented in a direction parallel to a second axis; and forming an optical anisotropical layer on the orienting film by applying a liquid crystal film of rod-like molecules on the orienting film which orients the rod-like molecules by virtue of spatial effect of the molecular units and the orienting spaces.

Abstract: An optical compensator includes a C-plate adapted to be coupled to a liquid crystal cell and made from a polymer. The C-plate has a layer thickness ranging from 5 to 60 ?m. The polymer is polyvinyl alcohol, has a polymerization degree greater than 2000 and less than 5000, and is cross-linked so that the C-plate has an optical axis substantially parallel to the direction of normally incident light, and so that the C-plate has a plate retardation, along the layer thickness of the C-plate, greater than 60 nm.

Abstract: Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure, Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed of high-quality, dense, gas-tight, pinhole free sub-micron scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein.

Abstract: Resistive materials have resistivities that are axis dependent are provided. Such resistive materials having a resistivity in a first direction and a very different resistivity in an orthogonal direction. These resistive materials are particularly suitable for use as resistors embedded in printed wiring boards.

Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Abstract: Nanolaminates are formed by alternating deposition, e.g., by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.

Abstract: Resistive materials having resistivities that are axis dependent are provided. Such resistive materials having a resistivity in a first direction and a very different resistivity in an orthogonal direction. These resistive materials are particularly suitable for use as resistors embedded in printed wiring boards.

Abstract: A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Abstract: In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.

Abstract: A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

Abstract: Nanolaminates are formed by alternating deposition, e.g., by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.

Abstract: Resistors are formed by selective etching from layered thin film material comprising an insulating substrate, a resistive material which is a mixture of a zero valence metal and a dielectric material, and a layer of conductive material.

Abstract: Nanolaminates are formed by alternating deposition, e.g., by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.

Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Abstract: In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.

Abstract: Precursor solutions are provided to produce thin film resistive materials by combustion chemical vapor deposition (CCVD) or controlled atmosphere combustion chemical vapor deposition (CACCVD). The resistive material may be a mixture of a zero valence metal and a dielectric material, or the resistive materials may be a conductive oxide.

Abstract: A composition of Ba.sub.2 Ti.sub.9 O.sub.20 suitable for use in microwave wireless communications is provided. Ba.sub.2 Ti.sub.9 O.sub.20 doped with Zr is formed by combining starting materials containing barium, titanium and zirconium. In a preferred embodiment of the invention, zirconium-doped Ba.sub.2 Ti.sub.9 O.sub.20 is formed by combining BaCO.sub.3 and TiO.sub.2, and substituting an appropriate amount of ZrO.sub.2 for a portion of the TiO.sub.2. The relative proportion of Ba.sub.2 Ti.sub.9 O.sub.20 obtained as a result is increased over that which may be obtained using other dopants, such as tin (Sn). Forming Ba.sub.2 Ti.sub.9 O.sub.20 with a Zr dopant in the appropriate amount also results in greater stability of the dielectric constant, an increase in the quality factor, and a decrease in the temperature coefficient than exhibited by other compositions of Ba.sub.2 Ti.sub.9 O.sub.20 that lack a Zr dopant.

Abstract: A shower head assembly includes a housing including a first end portion engaged with a water outlet cap and a second end portion connected to a water source. The water outlet cap defines a plurality of outer nozzles arranged in a circular manner and a plurality of inner nozzles arranged in a circular manner. An adjusting device is mounted on a periphery of the housing for alternatively introducing water in the housing into the outer nozzles or the inner nozzles such that water can be sprayed outwardly via the outer nozzles or via the inner nozzles alternatively.