Abstract: A ceiling fan and a structure thereof are provided. The structure includes a blade holder, a plurality of blades, and a plurality of positioning elements. The blade holder includes a holder body and a plurality of support platforms. The holder body has a plurality of first matching structures spaced apart from each other. Each of the support platforms includes a first positioning structure. Each of the blades has a second matching structure and a second positioning structure. The second matching structures can be guided by the first matching structures, so that each of the blades is disposed at an installation position on one of the support platforms along an oblique track. When each of the blades is located at the installation position, the first positioning structures and the second positioning structures abut against each other.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.

Abstract: A package substrate has a substrate surface and a chip region on the substrate surface. The package substrate includes circuit layers, conductive vias, and byte region rows. The circuit layers are sequentially spaced below the substrate surface. Each conductive via is connected to at least two of the circuit layers. The byte region rows are arranged side by side sequentially from an edge of the chip region to a center of the chip region, and each byte region row includes byte regions arranged in a row. Each byte region includes pads located on the circuit layer closest to the substrate surface. The pads of the byte regions of the byte region row closer to the edge of the chip region extend from the chip region to an outside of the chip region through traces of the circuit layer closer to the substrate surface.

Abstract: A chip package array including a plurality of chip packages is provided. The chip packages are suitable for array arrangement to form the chip package array. Each of the chip packages includes a redistribution structure, a supporting structure, a chip, and an encapsulated material. The supporting structure is disposed on the redistribution structure and has an opening. The chip is disposed on the redistribution structure and located in the opening. The encapsulated material is located between the opening and the chip, wherein the encapsulated material is filled between the opening and the chip, and the chip and the supporting structure are respectively connected to the redistribution structure.

Abstract: A chip package process includes the following steps. A supporting structure and a carrier plate are provided. The supporting structure has a plurality of openings. The supporting structure is disposed on the carrier plate. A plurality of chips is disposed on the carrier plate. The chips are respectively located in the openings of the supporting structure. An encapsulated material is formed to cover the supporting structure and the chips. The supporting structure and the chips are located between the encapsulated material and the carrier plate. The encapsulated material is filled between the openings and the chips. The carrier plate is removed. A redistribution structure is disposed on the supporting structure, wherein the redistribution structure is connected to the chips.

Abstract: A chip packaging method includes followings steps. A plurality of first chips are disposed on a carrier, wherein each of the first chips has a first active surface, and a plurality of first conductive pillars are disposed on the first active surface. A second active surface of a second chip is electrically connected to the first active surfaces of the first chips through a plurality of second conductive pillars. An encapsulated material is formed, wherein the encapsulated material covers the plurality of first chips, the plurality of first conductive pillars, the second chip and the plurality of second conductive pillars. The encapsulated material is partially removed to expose each of the plurality of first conductive pillars. A redistribution structure is formed on the encapsulated material, wherein the redistribution structure connects with the first conductive pillars.

Abstract: A chip package structure includes a plurality of first chips, a plurality of first conductive pillars, a second chip, a plurality of second conductive pillars, an encapsulated material and a redistribution structure. Each first chip has a first active surface. Each of the first conductive pillars is disposed on the first active surface of the corresponding first chip. A second active surface of the second chip is electrically connected to the first active surfaces of the first chips through the second conductive pillars. The encapsulated material partially covers the first chips, the first conductive pillars, the second chip and the second conductive pillars. The redistribution structure is disposed on the encapsulated material and connects the first conductive pillars. A chip package structure array is also provided.

Abstract: A probe card including a circuit board, a transformer, a probe head, and a reinforcement structure is provided. The transformer including a body, a plurality of solder balls, and a plurality of first contact points are disposed on the substrate. The body has a first surface and a second surface, wherein the first surface is located between the circuit board and the second surface. The solder balls are disposed on the first surface, and the first contact points are disposed on the second surface. The probe head is disposed on the second surface. The probe head is electrically connected to the circuit board by the first solder balls. The reinforcement structure is disposed between the probe head and the circuit board.

Abstract: A chip packaging method includes followings steps. A plurality of first chips are disposed on a carrier, wherein each of the first chips has a first active surface, and a plurality of first conductive pillars are disposed on the first active surface. A second active surface of a second chip is electrically connected to the first active surfaces of the first chips through a plurality of second conductive pillars. An encapsulated material is formed, wherein the encapsulated material covers the plurality of first chips, the plurality of first conductive pillars, the second chip and the plurality of second conductive pillars. The encapsulated material is partially removed to expose each of the plurality of first conductive pillars. A redistribution structure is formed on the encapsulated material, wherein the redistribution structure connects with the first conductive pillars.

Abstract: A chip package structure includes a plurality of first chips, a plurality of first conductive pillars, a second chip, a plurality of second conductive pillars, an encapsulated material and a redistribution structure. Each first chip has a first active surface. Each of the first conductive pillars is disposed on the first active surface of the corresponding first chip. A second active surface of the second chip is electrically connected to the first active surfaces of the first chips through the second conductive pillars. The encapsulated material partially covers the first chips, the first conductive pillars, the second chip and the second conductive pillars. The redistribution structure is disposed on the encapsulated material and connects the first conductive pillars. A chip package structure array is also provided.

Abstract: A probe card including a circuit board, a transformer, a probe head, and a reinforcement structure is provided. The transformer including a body, a plurality of solder balls, and a plurality of first contact points are disposed on the substrate. The body has a first surface and a second surface, wherein the first surface is located between the circuit board and the second surface. The solder balls are disposed on the first surface, and the first contact points are disposed on the second surface. The probe head is disposed on the second surface. The probe head is electrically connected to the circuit board by the first solder balls. The reinforcement structure is disposed between the probe head and the circuit board.

Abstract: A probe card including a circuit board, a transformer, a probe head, and a reinforcement structure is provided. The transformer including a body, a plurality of solder balls, and a plurality of first contact points are disposed on the substrate. The body has a first surface and a second surface, wherein the first surface is located between the circuit board and the second surface. The solder balls are disposed on the first surface, and the first contact points are disposed on the second surface. The probe head is disposed on the second surface. The probe head is electrically connected to the circuit board by the first solder balls. The reinforcement structure is disposed between the probe head and the circuit board.

Abstract: A probe card including a circuit board, a transformer, a probe head, and a reinforcement structure is provided. The transformer including a body, a plurality of solder balls, and a plurality of first contact points are disposed on the substrate. The body has a first surface and a second surface, wherein the first surface is located between the circuit board and the second surface. The solder balls are disposed on the first surface, and the first contact points are disposed on the second surface. The probe head is disposed on the second surface. The probe head is electrically connected to the circuit board by the first solder balls. The reinforcement structure is disposed between the probe head and the circuit board.

Abstract: A probe card including a circuit board, a transformer, a probe head, and a reinforcement structure is provided. The transformer including a body, a plurality of solder balls, and a plurality of first contact points are disposed on the substrate. The body has a first surface and a second surface, wherein the first surface is located between the circuit board and the second surface. The solder balls are disposed on the first surface, and the first contact points are disposed on the second surface. The probe head is disposed on the second surface. The probe head is electrically connected to the circuit board by the first solder balls. The reinforcement structure is disposed between the probe head and the circuit board.

Abstract: An electronic structure is provided with a redistribution structure and the following elements. A first supporting structure has a first opening and is disposed on a first surface of the redistribution structure. A second supporting structure has a second opening and is disposed on a second surface of the redistribution structure opposite to the first surface. A first bonding protruding portions are disposed on the first surface of the redistribution structure and located in the first opening. A second bonding protruding portions are disposed on the second surface of the redistribution structure and located in the second opening. A first encapsulated material is filled between the first opening and the first bonding protruding portions. A second encapsulated material is filled between the second opening and the second bonding protruding portions. An electronic structure array is also provided.

Abstract: An electronic structure is provided with a redistribution structure and the following elements. A first supporting structure has a first opening and is disposed on a first surface of the redistribution structure. A second supporting structure has a second opening and is disposed on a second surface of the redistribution structure opposite to the first surface. A first bonding protruding portions are disposed on the first surface of the redistribution structure and located in the first opening. A second bonding protruding portions are disposed on the second surface of the redistribution structure and located in the second opening. A first encapsulated material is filled between the first opening and the first bonding protruding portions. A second encapsulated material is filled between the second opening and the second bonding protruding portions. An electronic structure array is also provided.

Abstract: A chip package process includes the following steps. A supporting structure and a carrier plate are provided. The supporting structure has a plurality of openings. The supporting structure is disposed on the carrier plate. A plurality of chips is disposed on the carrier plate. The chips are respectively located in the openings of the supporting structure. An encapsulated material is formed to cover the supporting structure and the chips. The supporting structure and the chips are located between the encapsulated material and the carrier plate. The encapsulated material is filled between the openings and the chips. The carrier plate is removed. A redistribution structure is disposed on the supporting structure, wherein the redistribution structure is connected to the chips.

Abstract: An electronic structure process includes the following steps. A redistribution structure and a carrier plate are provided. A plurality of first bonding protruding portions and a first supporting structure are formed on the redistribution structure. A first encapsulated material is formed and filled between a first opening and the first bonding protruding portions. The carrier plate is removed. A plurality of second bonding protruding portions and a second supporting structure are formed on the redistribution structure. A second encapsulated material is formed and filled between a second opening and the second bonding protruding portions.